A Short Review on Raman Studies of Metal Chalcogenide Semiconductor Thin Films

2021 ◽  
Vol 33 (7) ◽  
pp. 1481-1487
Author(s):  
S.M. Ho ◽  
M.H.D. Othman ◽  
M.R. Adam ◽  
K. Mohanraj
Keyword(s):  
Thin Films ◽  
Fluorescence Emission ◽  
Short Review ◽  
Spectroscopic Methods ◽  
Chalcogenide Semiconductor ◽  
Metal Chalcogenide ◽  
Semiconductor Thin Films ◽  
Wide Range ◽  
Crystalline Nature ◽  
Photodiode Arrays

The productions of the thin metallic chalcogenide films are of particular interest for the wide range of fabrication of the solar cells, sensors, photodiode arrays, photoconductors. Raman spectroscopy is used to measure the scattering radiation of a matter. Basically, the spectroscopic methods can be defined as the study of the interaction of electromagnetic radiation with a matter. It can be based on the phenomenon of absorption, fluorescence, emission or scattering. The observation of peaks supported the formation of amorphous or crystalline nature of the samples. In this short review, the authors had gathered some informations about the Raman studies of recently synthesized metal chalcogenide semiconductor thin films.

scholarly journals The Growth of Semiconductor Thin Films Studied by RHEED

1990 ◽  
Vol 43 (5) ◽  
pp. 583
Author(s):  
GL Price
Keyword(s):  
Thin Films ◽  
Surface Science ◽  
High Vacuum ◽  
High Energy ◽  
Ultra High Vacuum ◽  
Large Area ◽  
Growth Modes ◽  
Semiconductor Thin Films ◽  
Wide Range ◽  
Recent Developments

Recent developments in the growth of semiconductor thin films are reviewed. The emphasis is on growth by molecular beam epitaxy (MBE). Results obtained by reflection high energy electron diffraction (RHEED) are employed to describe the different kinds of growth processes and the types of materials which can be constructed. MBE is routinely capable of heterostructure growth to atomic precision with a wide range of materials including III-V, IV, II-VI semiconductors, metals, ceramics such as high Tc materials and organics. As the growth proceeds in ultra high vacuum, MBE can take advantage of surface science techniques such as Auger, RHEED and SIMS. RHEED is the essential in-situ probe since the final crystal quality is strongly dependent on the surface reconstruction during growth. RHEED can also be used to calibrate the growth rate, monitor growth kinetics, and distinguish between various growth modes. A major new area is lattice mismatched growth where attempts are being made to construct heterostructures between materials of different lattice constants such as GaAs on Si. Also described are the new techniques of migration enhanced epitaxy and tilted superlattice growth. Finally some comments are given On the means of preparing large area, thin samples for analysis by other techniques from MBE grown films using capping, etching and liftoff.

Preparation and CO2 Gas Sensitive Properties of CuO-SrTiO3-Based Semiconductor Thin Films

2007 ◽  
Vol 280-283 ◽  
pp. 311-314 ◽  
Author(s):  
Yan Fei Gu ◽  
Hui Ming Ji ◽  
Bin Zhang ◽  
Ting Xian Xu
Keyword(s):  
Thin Films ◽  
Chelating Agents ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
Good Resistance ◽  
Gas Sensitivity ◽  
X Ray ◽  
Semiconductor Thin Films ◽  
Wide Range ◽  
Ft Ir

CuO-SrTiO3-based thin films were prepared by novel sol-gel technology on Al2O3 substrates using Cu(NO3)2, SrCl2 and TiCl4 as the starting materials, critic acid and ethylene glycol as chelating agents. CO2 sensing properties of the films were investigated. Structure characteristics of the sol and asgrown thin films were analyzed by FT-IR spectrum, X-ray diffraction and SEM. The results reveal that the films consisted of CuO phase and SrTiO3 phase have nanocrystalline microstructure at 750°C for 40 min. The modified CuO-SrTiO3 thin films exhibit good resistance-temperature and gas sensitivity properties in a wide range of temperature. The films exposed to 6% CO2 show that sensitivity are 32, and response and recover time are within 2 s at 250 °C operating temperature.

Piezoelectrics in Micro and Nanosystems: Solutions for a Wide Range of Applications

2008 ◽  
Vol 8 (5) ◽  
pp. 2560-2567 ◽  
Author(s):  
Paul Muralt
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Driving Force ◽  
Short Review ◽  
Piezoelectric Thin Films ◽  
Wide Range ◽  
Deposition Processes ◽  
Piezoelectric Thin Film

Piezoelectric thin films have interesting prospects in a number of applications for which miniaturization is a driving force. Miniaturization means higher frequency, or higher resolution, or increased functionality. This paper gives a short review on piezoelectric thin films, their deposition processes, integration, properties and applications in microsystems (MEMS), concentrating on the most frequently investigated piezoelectric thin film materials.

DABCO-Directed Self-Assembly of Pyrene-Centered Porphyrin Pentamers

2013 ◽  
Vol 575-576 ◽  
pp. 123-129
Author(s):  
Zhuang Dong Yuan ◽  
Jing Xia Wang ◽  
Ning Sheng
Keyword(s):  
Self Assembly ◽  
Fluorescence Emission ◽  
The Self ◽  
Spectroscopic Methods ◽  
Assembly Process ◽  
Zinc Porphyrin ◽  
Axial Coordination ◽  
H Nmr ◽  
Wide Range ◽  
Nmr Techniques

DABCO (1, 4-diazabicyclo [2.2.2] octane) has been used in combination with pentameric zinc porphyrin-pyrene array 1 to form well-defined supramolecular arrays through axial coordination. The self-assembly process has been investigated by a wide range of spectroscopic methods including UV-vis, fluorescence emission and 1H NMR techniques.

Semiconductor Thin Films Combined With Metallic Grating for Selective Improvement of Thermal Radiative Absorption/Emission

2009 ◽  
Vol 131 (3) ◽  
Author(s):  
C. J. Fu ◽  
W. C. Tan
Keyword(s):  
Thin Films ◽  
High Energy ◽  
Semiconductor Layer ◽  
Metallic Grating ◽  
Rigorous Coupled Wave Analysis ◽  
Semiconductor Thin Films ◽  
Wide Range ◽  
Potential Applications ◽  
Rigorous Coupled Wave ◽  
Energy Conversion Devices

We propose in this work a structure of semiconductor thin films combined with a one-dimensional metallic grating, which allows for selective improvement of thermal radiative absorptivity (also emissivity) of the structure. Both shallow and deep gratings are considered in this work. Our numerical results obtained with a 2D rigorous coupled-wave analysis algorithm demonstrate that the proposed structure exhibits enhanced spectral absorptivity for photon energy slightly above the gap energy of the semiconductor (silicon in this work). Furthermore, the selectively improved absorptivity can be obtained in a wide range of incidence angles. As such, much smaller thickness of the semiconductor layer is required to absorb the same amount of high energy photons than in a conventional Si-based photovoltaic device. In addition, absorptivity for low energy photons in the new structure is lower due to the smaller semiconductor layer thickness. Therefore, the new structure may have potential applications in energy conversion devices.

Semiconductor Thin Films Combined With Metallic Grating for Selective Improvement of Thermal Radiative Absorption/Emission

2008 ◽  
Author(s):  
Ceji Fu ◽  
Wenchang Tan
Keyword(s):  
Thin Films ◽  
Semiconductor Layer ◽  
Surface Polaritons ◽  
Metallic Grating ◽  
Semiconductor Thin Films ◽  
Wide Range ◽  
Diffracted Waves ◽  
Potential Applications ◽  
Rigorous Coupled Wave ◽  
Grating Region

We propose in this work a structure of semiconductor thin films combined with a one-dimensional metallic grating which allows for selective improvement of thermal radiative absorptivity (also emissivity) of the structure. We numerically demonstrate with a 2-D rigorous coupled-wave analysis (RCWA) algorithm that the proposed structure exhibits enhanced spectral absorptivity (for p-polarization) for photon energy slightly above the gap energy of the semiconductor (silicon in this work). The enhanced absorptivity is explained as due to excitations of surface polaritons (SPs) in the grating region, along with interactions of multiple-order diffracted waves in the semiconductor layer. Furthermore, the enhanced absorptivity of the structure can be achieved for a wide range of incidence angles so that it may have potential applications in energy conversion purposes.

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