Study on the synthesis and application of BaTiO3 nanospheres

2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Do Viet On ◽  
Le Dai Vuong ◽  
Truong Van Chuong ◽  
Dao Anh Quang ◽  
Vo Thanh Tung
Keyword(s):  
Dielectric Constant ◽  
Room Temperature ◽  
Optimum Conditions ◽  
Hydrothermal Conditions ◽  
Hydrothermal Route ◽  
Great Density ◽  
Hydrothermal Temperature ◽  
Large Dielectric Constant ◽  
High Dielectric ◽  
Uniform Particle Size

Abstract In the present study, BaTiO3 nanospheres with a uniform particle size of around 100 nm were prepared by a hydrothermal route using Ba(OH)2.8H2O and TiO2 nanoparticles. Experimental results revealed that the main influencing factors for the formation of BaTiO3 nanospheres were molar Ba/Ti ratio (R Ba/Ti), hydrothermal temperature, and time. Highly-dispersed BaTiO3 nanospheres (100 nm) were obtained under the optimum hydrothermal conditions at temperature = 200°C, time = 12 h, and R Ba/Ti = 1.5. Under these optimum conditions, BaTiO3 ceramics were synthesized from the as-prepared BaTiO3 nanospheres, and their structural, microstructural, and electrical properties were investigated. The BaTiO3 ceramics exhibited a high dielectric constant of 7300 at a Curie temperature of 125 °C, great density (ρ), 5.83 g cm–3; large dielectric constant at room temperature er = 3586 and tan d = 0.03, high remanant polarization P r = 10.6 μC cm–2, low coercive field E c = 4.5 kVcm–1.

Atomistic prediction on the configuration- and temperature-dependent dielectric constant of Be0.25Mg0.75O superlattice as a high-κ dielectric layer

2021 ◽  
Author(s):  
Gyuseung Han ◽  
In Won Yeu ◽  
Kun Hee Ye ◽  
Seung-Cheol Lee ◽  
Cheol Seong Hwang ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Dft Calculations ◽  
Bond Length ◽  
Dielectric Layer ◽  
Room Temperature ◽  
High Dielectric Constant ◽  
Temperature Dependent ◽  
High Dielectric

Through DFT calculations, a Be0.25Mg0.75O superlattice having long apical Be–O bond length is proposed to have a high bandgap (>7.3 eV) and high dielectric constant (∼18) at room temperature and above.

Development of High-Dielectric-Strength Ceramic Film Capacitors for Advanced Power Electronics

2012 ◽  
Vol 2012 (1) ◽  
pp. 000609-000616
Author(s):  
Beihai Ma ◽  
Manoj Narayanan ◽  
Shanshan Liu ◽  
Sheng Tong ◽  
U. (Balu) Balachandran
Keyword(s):  
Dielectric Constant ◽  
Power Electronics ◽  
Room Temperature ◽  
Breakdown Strength ◽  
Dielectric Strength ◽  
X Ray Diffraction ◽  
Lead Lanthanum Zirconate Titanate ◽  
Solution Deposition ◽  
Ceramic Film ◽  
High Dielectric

Ceramic film capacitors with high dielectric constant and high breakdown strength are promising for use in advanced power electronics, which would offer higher performance, improved reliability, and enhanced volumetric and gravimetric efficiencies. We have grown lead lanthanum zirconate titanate (PLZT) on nickel foils and platinized silicon (PtSi) substrates by chemical solution deposition. A buffer layer of LaNiO3 (LNO) was deposited on the nickel foils prior to the deposition of PLZT. We measured the following electrical properties for PLZT films grown on LNO buffered Ni and PtSi substrates, respectively: remanent polarization, ≈25.4 μC/cm2 and ≈10.1 μC/cm2; coercive electric field, ≈23.8 kV/cm and ≈27.9 kV/cm; dielectric constant at room temperature, ≈1300 and ≈1350; and dielectric loss at room temperature, ≈0.06 and ≈0.05. Weibull analysis determined the mean breakdown strength to be 2.6 MV/cm and 1.5 MV/cm for PLZT films grown on LNO buffered Ni and PtSi substrates, respectively. Residual stress analysis by x-ray diffraction revealed compressive stress of ≈-520 MPa in the ≈2-μm-thick PLZT grown on LNO buffered Ni foil, but a tensile stress of ≈210 MPa in the ≈2-μm-thick PLZT grown on PtSi substrates.

Effect of Platinum Substitution on the Microstructures and Dielectric Relaxation of CaCu3Ti4O12 Ceramics

2013 ◽  
Vol 802 ◽  
pp. 134-138 ◽  
Author(s):  
Worawut Makcharoen
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Loss Tangent ◽  
Room Temperature ◽  
High Dielectric Constant ◽  
Ferroelectric Materials ◽  
X Ray Diffraction ◽  
High Loss ◽  
Internal Barrier Layer Capacitor ◽  
High Dielectric

The CaCu3Ti4O12(CCTO) has the advantage for the various applications especially for capacitive elements in microelectronic devices over the ferroelectric materials including BaTiO3. CCTO is a ceramic compound with a high dielectric constant but it has a high loss tangent at room temperature. In this work, the Influences of PtO2doping on the dielectric properties of CaCu3Ti4O12(CCTO) ceramics were investigate. The ceramics CCTO and PtO2doping CCTO were studied by X- ray diffraction, scanning electron microscopy. The dielectric properties have been measured as a function of temperature and frequency range 0.1 - 500 kHz. The XRD shows the CCTO structure does not changes after doping with platinum. The results show that PtO2doped can reduce the mean grain sizes of CCTO, but the dielectric constant still remained a height. The samples of 2.0 mol% Pt-doped have exhibited high dielectric constant of about 22,000 and the loss tangent about 0.7 at room temperature and frequency at 10 kHz. The reduced of the loss tangent could be interpreted with the internal barrier layer capacitor model (IBLC)

Dielectric Properties of CaCu3Ti4O12-P(VDF-TrFE) Composite

2006 ◽  
Vol 949 ◽  
Author(s):  
Xiaobing Shan ◽  
Xin Yang ◽  
Kewei Zhang ◽  
Zhongyang Cheng
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Room Temperature ◽  
Powder Processing ◽  
Ceramic Powders ◽  
Casting Method ◽  
Uniform Size ◽  
Solution Casting Method ◽  
High Dielectric ◽  
Conventional Solution

ABSTRACTBy using conventional solution casting method, a flexible ceramic [CaCu3Ti4O12 (CCTO)]-Polymer [P(VDF-TrFE)] composite has been fabricated. The CCTO ceramic powders with a relative uniform size were prepared by traditional powder processing method. The dielectric properties of these films with different CCTO fractions were determined. The process was optimized to achieve high dielectric constant. A dielectric constant about 510 at room temperature and 1240 at 95 °C at 1 kHz for 6 layer hot compression was obtained.

Synthesis of Nitrogen-Doped Titanium Oxide Nanostructures Via a Surfactant-Free Hydrothermal Route

2005 ◽  
Vol 20 (11) ◽  
pp. 3011-3020 ◽  
Author(s):  
Chang Houn Rhee ◽  
Jae Sung Lee ◽  
Soo Hyun Chung
Keyword(s):  
Anatase Phase ◽  
High Surface ◽  
High Surface Area ◽  
Ammonium Ion ◽  
Molar Ratio ◽  
Titanium Oxides ◽  
Hydrothermal Conditions ◽  
Hydrothermal Route ◽  
Hydrothermal Temperature ◽  
Nitrogen Doped

Nitrogen-doped titanium oxides nanostructures were synthesized by a new method proposed here from titanium oxysulfate precursor in a NH4OH solution under hydrothermal conditions without any extra templates as structure driving agents. The material synthesized with NH4OH was an ammonium titanate and showed curled nanosheets, nanofibers or nanorods morphologies depending on the molar ratio of NH4OH to titanium precursor and the hydrothermal temperature. The nanofibrous titanates had a high surface area over 500 m2 g−1 and a pore volume of 0.72 cm3 g−1. The calcination of as-synthesized material at 673 K produced a titanium oxynitride TiO2−xNx with anatase phase, which absorbed visible light. Ion exchange of ammonium ion of the titanate with sodium Na2Ti3O7−xNx enhanced the thermal stability of the titanate phase.

The Giant Dielectric Constant of Y2NiMnO6 Ceramics for DC Bias

2017 ◽  
Vol 866 ◽  
pp. 277-281
Author(s):  
Naphat Albutt ◽  
Suejit Pechprasarn ◽  
Pattaraporn Damkoengsuntorn ◽  
Thanapong Sareein
Keyword(s):  
Dielectric Constant ◽  
Dielectric Permittivity ◽  
Room Temperature ◽  
Frequency Range ◽  
Electronic Components ◽  
Giant Dielectric ◽  
High Dielectric Permittivity ◽  
Dc Bias ◽  
Giant Dielectric Constant ◽  
High Dielectric

In this work, the uses of giant dielectric constant of Y2NiMnO6 ceramics were investigated in the frequency range from 1 kHz to 3 MHz. The Y2NiMnO6 ceramics were sintered at 1400 °C for 6, 12, 18 and 24 hours, respectively. The dielectric properties of Y2NiMnO6 ceramics were examined in dc bias from 0 to 1.5 volt at room temperature. We found that all sintering times displayed high dielectric permittivity at frequencies below 105 Hz, above which the values decreased significantly, applied dc bias also reduced dielectric permittivity. The peak of dielectric loss decreased significantly at high dc bias due to decreased contribution of dc conductivity in grain ceramics. This research has characterised electrical properties of Y2NiMnO6 ceramics which maybe suitable for electronic components including batteries and capacitors.

scholarly journals Investigation of Grain Size Effect on the Impedance of CaCu3Ti4O12 from 100 Hz to 1 GHz of Frequency

2012 ◽  
Vol 620 ◽  
pp. 230-235 ◽  
Author(s):  
Muhammad Azwadi Sulaiman ◽  
Sabar Derita Hutagalung ◽  
Zainal Arifin Ahmad ◽  
Mohd Fadzil Ain
Keyword(s):  
Dielectric Constant ◽  
Barrier Layer ◽  
Room Temperature ◽  
High Dielectric Constant ◽  
Perovskite Phase ◽  
Wide Frequency Range ◽  
Treatment Temperature ◽  
Domain Boundaries ◽  
High Dielectric ◽  
Very High

CaCu3Ti4O12(CCTO) is a cubical perovskite phase and sintered ceramics exhibit very high dielectric constant at room temperature. The speculated origins of the high dielectric constant are the existence of insulative barrier layer at grain boundaries and domain boundaries which created an internal barrier layer capacitance (IBLC) at the microstructure of CCTO. The relation of grains and domains electrical resistance were studied in this work by using impedance spectroscopy (IS). A series of samples with different heat treatment temperature were tested to investigate their microstructure by using field emission scanning electron microscopy (FESEM). The grains and domains resistance was calculated from a wide frequency range of impedance complex plane measurement (100 Hz to 1 GHz). The FESEM and IS analyses showed the dependency of grains and domains resistance to average grains size of CCTO microstructure.

scholarly journals Cu(i) substituted wurtzite ZnO: a novel room temperature lead free ferroelectric and high-κ giant dielectric

RSC Advances ◽  
2020 ◽  
Vol 10 (19) ◽  
pp. 11382-11392 ◽  
Author(s):  
Neeraj Singh ◽  
Preetam Singh
Keyword(s):  
Dielectric Constant ◽  
Room Temperature ◽  
High Dielectric Constant ◽  
Lead Free ◽  
Giant Dielectric ◽  
High Dielectric

Cu+ ion substituted ZnO, Zn1−xCuxO1−δ have shown high dielectric constant (∼6300) at 600 °C at 100 kHz frequency and ferroelectricity at room temperature than for bulk Zn0.95Cu0.05O1−δ samples.

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