scholarly journals Influence of duration time of CVD process on emissive properties of carbon nanotubes films

2015 ◽  
Vol 33 (1) ◽  
pp. 36-46
Author(s):  
Izabela Stępinska ◽  
Mirosław Kozłowski ◽  
Joanna Radomska ◽  
Halina Wronka ◽  
Elżbieta Czerwosz ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Carbon Nanotubes ◽  
Electron Emission ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Chemical Vapor ◽  
Second Step ◽  
Step Method ◽  
Transmission Electron ◽  
Deposition Step

AbstractIn this paper various types of films made of carbon nanotubes (CNTs) are presented. These films were prepared on different substrates (Al2O3, Si n-type) by the two-step method. The two-step method consists of physical vapor deposition step, followed by chemical vapor deposition step (PVD/CVD). Parameters of PVD process were the same for all initial films, while the duration times of the second step - the CVD process, were different (15, 30 min.). Prepared films were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM) and field emission (FE) measurements. The I-E and F-N characteristics of electron emission were discussed in terms of various forms of CNT films. The value of threshold electric field ranged from few V/μm (for CNT dispersed rarely on the surface of the film deposited on Si) up to ~20 V/μm (for Al2O3 substrate).

Effectiveness and Reliability of Metal Diffusion Barriers for Copper Interconnects

1995 ◽  
Vol 403 ◽  
Author(s):  
G. Bai ◽  
S. Wittenbrock ◽  
V. Ochoa ◽  
R. Villasol ◽  
C. Chiang ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Chemical Vapor ◽  
Diffusion Barriers ◽  
Copper Interconnects ◽  
Time To Failure ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron

AbstractCu has two advantages over Al for sub-quarter micron interconnect application: (1) higher conductivity and (2) improved electromigration reliability. However, Cu diffuses quickly in SiO2and Si, and must be encapsulated. Polycrystalline films of Physical Vapor Deposition (PVD) Ta, W, Mo, TiN, and Metal-Organo Chemical Vapor Deposition (MOCVD) TiN and Ti-Si-N have been evaluated as Cu diffusion barriers using electrically biased-thermal-stressing tests. Barrier effectiveness of these thin films were correlated with their physical properties from Atomic Force Microscopy (AFM), Transmission Electron Microscopy (TEM), Secondary Electron Microscopy (SEM), and Auger Electron Spectroscopy (AES) analysis. The barrier failure is dominated by “micro-defects” in the barrier film that serve as easy pathways for Cu diffusion. An ideal barrier system should be free of such micro-defects (e.g., amorphous Ti-Si-N and annealed Ta). The median-time-to-failure (MTTF) of a Ta barrier (30 nm) has been measured at different bias electrical fields and stressing temperatures, and the extrapolated MTTF of such a barrier is > 100 year at an operating condition of 200C and 0.1 MV/cm.

Aligned Carbon Nanotubes Via Microwave Plasma Enhanced Chemical Vapor Deposition

1999 ◽  
Vol 593 ◽  
Author(s):  
H. Cui ◽  
D. Palmer ◽  
O. Zhou ◽  
B. R. Stoner
Keyword(s):  
Electron Microscopy ◽  
Carbon Nanotubes ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
Multi Wall Carbon Nanotubes ◽  
Field Emission Properties ◽  
Transmission Electron

ABSTRACTAligned multi-wall carbon nanotubes have been grown on silicon substrates by microwave plasma enhanced chemical vapor deposition using methane/ammonia mixtures. The concentration ratio of methane/ammonia in addition to substrate temperature was varied. The morphology, structure and alignment of carbon nanotubes were studied by scanning electron microscopy and transmission electron microscopy. Both concentric hollow and bamboo-type multi-wall carbon nanotubes were observed. Growth rate, size distribution, alignment, morphology, and structure of carbon nanotubes changed with methane/ammonia ratio and growth temperature. Preliminary results on field emission properties are also presented.

Single walled 0.4 nm carbon nanotube bundles prepared by pyrolysis of n-hexane catalyzed by ferrocene

2003 ◽  
Vol 772 ◽  
Author(s):  
Qixiang Wang ◽  
Guoqing Ning ◽  
Fei Wei ◽  
Guohua Luoa
Keyword(s):  
Electron Microscopy ◽  
Carbon Nanotubes ◽  
Scanning Electron Microscopy ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Single Walled Carbon Nanotubes ◽  
Nanotube Bundles ◽  
Transmission Electron ◽  
Walled Carbon Nanotubes ◽  
Scanning Electron

AbstractBundles of single walled 0.4 nm carbon nanotubes were prepared by chemical vapor deposition using n-hexane as carbon source catalyzed by ferrocene with additives of thiophene at 1373 K. 8 cm long rope of single walled carbon nanotubes with diameters of 0.8-1.18 nm was also synthesized. The products were characterized by scanning electron microscopy, high resolution transmission electron microscopy and Raman spectroscopy.

scholarly journals Structure and Mechanical Properties of PVD and CVD TiAlSiN Coatings Deposited on Cemented Carbide

Crystals ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 598
Author(s):  
Liying Wu ◽  
Lianchang Qiu ◽  
Yong Du ◽  
Fangfang Zeng ◽  
Qiang Lu ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Mechanical Properties ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Energy Dispersive Spectrometer ◽  
Chemical Vapor ◽  
Cemented Carbide ◽  
Transmission Electron ◽  
Pressure Chemical

This work reports the results of our investigation of the structure and mechanical properties of physical vapor deposition (PVD) and chemical vapor deposition (CVD) TiAlSiN coatings deposited on cemented carbide substrates. For the first time, a novel nanocomposite of Ti0.13Al0.85Si0.02N coating deposited from TiCl4-AlCl3-SiCl4-NH3-H2 gas precursors was prepared by low pressure chemical vapor deposition (LPCVD) at 780 °C and a pressure of 60 mbar, while PVD Ti0.31Al0.60Si0.09N coating was prepared using the arc ion plating method. The investigation results including morphology, microstructure, chemical composition, phase component, and hardness were carried out by scanning electron microscopy (SEM) equipped with energy dispersive spectrometer (EDS), transmission electron microscopy (TEM), X-ray diffraction (XRD), and nano-indentator. TEM results revealed that both PVD and CVD TiAlSiN coatings consisted of nanocrystalline embedded in SiNx amorphous. The nanohardness of CVD Ti0.13Al0.85Si0.02N coating obtained in this work was 31.7 ± 1.4 GPa, which was 35% higher than that of the PVD Ti0.31Al0.60Si0.09N coating.

Poly(meta-phenylene isophthalamide) nanofibers: Coating and post processing

2002 ◽  
Vol 17 (12) ◽  
pp. 3206-3212 ◽  
Author(s):  
Wenxia Liu ◽  
Matthew Graham ◽  
Edward A. Evans ◽  
Darrell H. Reneker
Keyword(s):  
Electron Microscopy ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Chemical Vapor ◽  
Electrospun Nanofibers ◽  
Post Processing ◽  
Good Thermal Stability ◽  
Nanoscale Structures ◽  
Transmission Electron ◽  
Deposited Films

Electrospun nanofibers have applications in the areas of filtration, composites, biomaterials, and electronics. Controlling the surface properties of these nanofibers is important for many applications. Nanofibers can also be used as unique substrates for observing the growth of deposited films and creating nanoscale structures. In this work, electrospun poly(meta-phenylene isophthalamide) (MPD-I) nanofibers were used as substrates for creating nanoscale structures out of carbon-based materials and metals. MPD-I was used because it can be electrospun into nanofibers with diameters smaller than 10 nm and it has good thermal stability. MPD-I nanofibers were coated with carbon, copper, and aluminum using plasma enhanced chemical vapor deposition and physical vapor deposition methods. Some of the aluminum-coated nanofibers were then converted into nanotubes. Transmission electron microscopy was used to determine the thickness, uniformity, and grain size of the coatings on the fibers and the nanotubes.

scholarly journals SYNTHESIS OF CARBON NANOTUBES BY ECR PLASMA-ASSISTED CHEMICAL VAPOR DEPOSITION

2004 ◽  
Vol 03 (06) ◽  
pp. 845-851
Author(s):  
S. K. PATRA ◽  
G. MOHAN RAO
Keyword(s):  
Electron Microscopy ◽  
Carbon Nanotubes ◽  
Vapor Deposition ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Chemical Vapor ◽  
Plasma Source ◽  
Ecr Plasma ◽  
Transmission Electron ◽  
Synthesis Of Carbon Nanotubes

Carbon nanotubes have been grown using electron cyclotron resonance (ECR) plasma source at a substrate temperature of 500°C. Methane has been used as the source gas. A network of carbon nanotubes have been observed in Scanning Electron Microscopy (SEM). Transmission Electron Microscopy (TEM) revealed that the structure consists of straight, Y-junction and ring-like nanotubes. Further, electron diffraction (ED) of the nanotubes confirms graphite crystal structure.

Synthesis and Characterization of Large Area Carbon Nanotubes Array

2013 ◽  
Vol 750-752 ◽  
pp. 232-235
Author(s):  
Zhi Wang ◽  
Chun Hong Yu
Keyword(s):  
Electron Microscopy ◽  
Carbon Nanotubes ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Tubular Structures ◽  
Large Area ◽  
Aligned Arrays ◽  
Transmission Electron ◽  
Simple Chemical

Large area carbon nanotubes array were synthesized on the quartz glass by a simple chemical vapor deposition. Scanning electron microscopy and transmission electron microscopy were used to evaluate the morphology and structure. The results show that the well-aligned arrays are synthesized and their length can reach millimeter range, these CNTs have varying outer diameters from 20 to 70 nm and display hollow tubular structures.

Chemical Vapor Deposition Growth of Multi-Walled Carbon Nanotubes on Metallic Substrates

2007 ◽  
Vol 121-123 ◽  
pp. 101-104
Author(s):  
Xiao Ping Zou ◽  
H. Abe ◽  
Toru Shimizu ◽  
A. Ando ◽  
H. Tokumoto ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Carbon Nanotubes ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Growth ◽  
Large Current ◽  
Transmission Electron ◽  
Multi Walled Carbon Nanotubes ◽  
Walled Carbon Nanotubes

A simple thermal chemical vapor deposition (STCVD) growth technique of multi-walled carbon nanotubes (MWCNTs) is present. Carbon nanotube film was synthesized on the Pt plate substrates by pyrolysis of ethyl alcohol as carbon source at lower reaction temperature at atmospheric pressure by using simple apparatus. The as-synthesized MWCNTs were characterized by both scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM). The electrical property of an individual MWCNT was evaluated by I-V measurement. The electrical resistance of single MWCNT is about 450 k/ in linear region under bias voltage between 2 to 4 V. It can undergo a large current of 6 2A at 4 V

Transmission Electron Microscopy (TEM) Specimen Preparation Technique using Focused Ion Beam (FIB): Application to Material Characterization of Chemical Vapor Deposition of Tungsten (W) and Tungsten Silicides (WSix)

1997 ◽  
Author(s):  
K. Doong ◽  
J.-M. Fu ◽  
Y.-C. Huang
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Specimen Preparation ◽  
Preparation Technique ◽  
Transmission Electron

Abstract The specimen preparation technique using focused ion beam (FIB) to generate cross-sectional transmission electron microscopy (XTEM) samples of chemical vapor deposition (CVD) of Tungsten-plug (W-plug) and Tungsten Silicides (WSix) was studied. Using the combination method including two axes tilting[l], gas enhanced focused ion beam milling[2] and sacrificial metal coating on both sides of electron transmission membrane[3], it was possible to prepare a sample with minimal thickness (less than 1000 A) to get high spatial resolution in TEM observation. Based on this novel thinning technique, some applications such as XTEM observation of W-plug with different aspect ratio (I - 6), and the grain structure of CVD W-plug and CVD WSix were done. Also the problems and artifacts of XTEM sample preparation of high Z-factor material such as CVD W-plug and CVD WSix were given and the ways to avoid or minimize them were suggested.

Sign in / Sign up

Export Citation Format

Share Document