Fabrication and characteristics study of ITO/DBSA/PSS/PPY/Al SCHOTTKY junction diode

2014 ◽  
Vol 34 (5) ◽  
pp. 471-475 ◽  
Author(s):  
Periyannan Jayamurugan ◽  
Veerappa Gounder Ponnuswamy ◽  
Ramasamy Mariappan ◽  
Thaiyan Mahalingam ◽  
Yammani Venkat Subba Rao
Keyword(s):  
Band Gap ◽  
Ideality Factor ◽  
Indium Tin Oxide ◽  
Sulfonic Acid ◽  
Uv Spectroscopy ◽  
Forward Bias ◽  
Band Gap Energy ◽  
Current Voltage ◽  
Ito Glass

Abstract A water-dispersed dodecylbenzene sulfonic acid (DBSA)/poly (styrene sulfonic acid) (PSS)/polypyrrole (PPY) composite was prepared by an in situ chemical polymerization method. The prepared solution was spun on indium tin oxide (ITO) glass plates at different rates of 2000 and 3000 rpm. The optical band gap energy (Eg) was calculated by UV spectroscopy. The band gap of the composite thin films was found at 1.89 eV and 1.93 eV, respectively. A Fourier transform infrared (FTIR) spectrum confirms the presence of dopant and co-dopant in the structure. The diode parameters were calculated from current-voltage (I-V) characteristics and discussed. The I-V characteristics of the devices indicated behavior of a Schottky diode. The ideality factor, barrier height (ϕb) and saturation current were investigated. The ϕb was found to be 0.59 eV and 0.52 eV for 2000 rpm and 3000 rpm, respectively. The ideality factor was calculated from the slope of the linear region of the forward bias in the I-V curves and was found to be 6.4 and 13.5. The results of the present study reveal that the 2000 rpm coated ITO/DBSA/PSS/PPY/Al device showed better nonlinearity behavior than the 3000 rpm one.

Determination of Band Gap Energy of Semiconductor in Homojunction Structure Devices by Using Customized Microcontroller Based Apparatus

2014 ◽  
Vol 896 ◽  
pp. 633-637 ◽  
Author(s):  
Kuwat Triyana ◽  
Surya Ramadhan ◽  
Aji Muhammad Iqbal Barata ◽  
Chotimah ◽  
Sabarman Harsojo
Keyword(s):  
Band Gap ◽  
Pid Controller ◽  
Forward Bias ◽  
Band Gap Energy ◽  
Proportional Integral Derivative ◽  
Gap Energy ◽  
Forward Bias Voltage ◽  
Current Voltage ◽  
Thermos Flask

We have successfully developed a customized apparatus based on microcontroller for simple band gap energy (Eg) measurement of semiconductors in homojunction structure devices. The apparatus consisted of a data acquisition system based on microcontroller AVR ATMega 128 and a thermos flask equipped with temperature controller. It permits recording of current-voltage (I-V) and temperature and subsequently sends data to a computer to enable the computer processing of such data. For samples under tested, we used two types of commercial diode, i.e. Silicon (1N4007) and Germanium (1N60). In this measurement, the voltage across the resistor was used to calculate the current while the voltage across the diode gave the forward bias voltage. The temperature of diode was varied from 5°C to 80°C. During each I-V measurement, the temperature of diode was maintained to be constant by employing a proportional-integral-derivative (PID) controller to the heater. Furthermore, by varying the temperature of diode, we could extract the saturation currents under reverse bias across the diode of each I-V measurement. For the two types of diode, it is found that the Eg of silicon is 1.13 ± 0.03 eV, while that of germanium is 0.71 ± 0.03 eV. This result is closed to the Eg value of each diode indicated in the respective datasheet. Therefore, it suggests for applying this apparatus for measuring Eg of semiconductor in most homojunction structure devices.

Electrical Study of Schottky Barriers on Cleaved InP and GaAs (110) Surfaces

1985 ◽  
Vol 54 ◽  
Author(s):  
N. Newman ◽  
M. van Schilfgaarde ◽  
T. Kendelewicz ◽  
W. E. Spicer
Keyword(s):  
Barrier Height ◽  
Ideality Factor ◽  
High Vacuum ◽  
Forward Bias ◽  
Thermionic Emission ◽  
Ultra High Vacuum ◽  
Leakage Currents ◽  
Current Voltage ◽  
Measuring Techniques

We have performed a systematic study of the electrical properties of a large number of metal/n-GaAs and metal/n-InP diodes. Diodes were fabricated on clean cleaved InP and GaAs (110) surfaces in ultra-high vacuum with in-situ metal deposition of Cr, Mn, Sn, Ni, Al, Pd, Cu, Ag and Au. Using current-voltage (I-V) and capacitance-voltage (C-V) measuring techniques, we were able to obtain very reliable and consistent determinations of the barrier height, θ/b, and ideality factor, n. All of the metal-semiconductor systems formed on lightly doped (< 5×1016/cm3) substrates were characterized by near-unity (1.05) ideality factors.The effects of doping on the electrical characteristics of the n-GaAs diodes were investigated. A decrease in the effective I-V barrier height, an increase in the ideality factor in forward bias and a strong voltage dependence on the thermionic emission currents in reverse bias were found for diodes formed on the more heavily doped samples. These changes are essentially metal-independent, but depend strongly on the doping of the substrate. The characterization (and elimination in some cases) of peripheral leakage currents from the thermionic emission current for the n-GaAs systems was found to be essential in obtaining consistent results in our work and in reinterpreting some of the prior work in the literature. The dominant leakage current in the GaAs diodes flows through a small area, low barrier at the periphery of the device and can be eliminated by mesa etching.

“In-Situ Raman Spectroscopy of Electronic Processes in Fullerene Thin Films

2002 ◽  
Vol 725 ◽  
Author(s):  
S.B. Phelan ◽  
B.S. O'Connell ◽  
G. Farrell ◽  
G. Chambers ◽  
H.J. Byrne
Keyword(s):  
Thin Film ◽  
Indium Tin Oxide ◽  
Low Temperatures ◽  
In Situ Raman Spectroscopy ◽  
State Reduction ◽  
In Situ Raman ◽  
Linear Behavior ◽  
Current Voltage ◽  
Solid State Reduction

AbstractThe current voltage characteristics of C60 thin film sandwich structures fabricated by vacuum deposition on indium tin oxide (ITO) with an aluminium top electrode are presented and discussed. A strongly non-linear behavior and a sharp increase in the device conductivity was observed at relatively low voltages (∼2V), at both room and low temperatures (20K). At room temperature the system is seen to collapse, and in situ Raman measurements indicate a solid state reduction of the fullerene thin film to form a polymeric state. The high conductivity state was seen to be stable at elevated voltages and low temperatures. This state is seen to be reversible with the application of high voltages. At these high voltages the C60 film was seen to sporadically emit white light at randomly localized points analogous to the much documented Electroluminescence in single crystals.

Electrical Properties of Azo-Ferrocene as Organic Diode

2014 ◽  
Vol 895 ◽  
pp. 505-508
Author(s):  
Siti Athirah Mohamad Jamali ◽  
Hasiah Salleh ◽  
Tei Tagg
Keyword(s):  
Electrical Conductivity ◽  
Bias Voltage ◽  
Indium Tin Oxide ◽  
Single Layer ◽  
Potential Range ◽  
Voltage Measurement ◽  
Slow Increase ◽  
Current Voltage ◽  
Ito Glass ◽  
Single Layer Film

Ferrocene is a well-known electron donor due to its chemical stability and redox behaviour. By introducing azo dye as an acceptor in the system, the characteristics of azo-ferrocene (AF) compound as a semiconductor material have been investigated. A single layer film of AF compound was deposited on an indium tin oxide (ITO) glass substrate by electrochemical method in the potential range of 0.4 V to 0.8 V. Electrical conductivity of the thin film was investigated using a four-point probe and I-V characteristic of the diode was determined via a two-point probe method. AF material showed an average electrical conductivity of 0.246 ± 0.003 Scm-1. The forward current-voltage measurement demonstrated a bias voltage in the range of 0.87 V to 10.0 V, and the backward current-voltage measurement indicated a bias voltage in the range of-0.87 V to-7.0 V. In both forward and backward voltages, the current showed a slow increase beyond the readings of 10.0 V to-7.0 V.

MBE Growth and Optical Properties of ZnSeO

2002 ◽  
Vol 744 ◽  
Author(s):  
Y. Nabetani ◽  
T. Mukawa ◽  
Y. Ito ◽  
T. Kato ◽  
T. Matsumoto
Keyword(s):  
Band Gap ◽  
High Energy ◽  
Band Gap Energy ◽  
Rf Plasma ◽  
Photoluminescence Intensity ◽  
X Ray Diffraction ◽  
Mbe Growth ◽  
Vegard’S Law ◽  
Peak Energy

ABSTRACTZnSeO alloy was successfully grown by molecular beam epitaxy on GaAs substrate using RF plasma. The crystal structure of epitaxial ZnSeO alloy was zincblende. No phase separation was observed by in-situ reflection high energy electron diffraction and X-ray diffraction measurements. O composition was estimated by lattice constant assuming Vegard's law. Photoluminescence intensity was larger than that of ZnSe. The peak energy shifted toward lower energies by increasing O composition. The band gap energy determined by photoluminescence excitation decreased with increasing O composition. The bowing parameter was obtained as high as 8.2eV. This large band gap bowing widens controllable energy range of II-VI semiconductor.

New complexes constructed from in situ nitration of (1H-tetrazol-5-yl)phenol: synthesis, structures and properties

CrystEngComm ◽  
2017 ◽  
Vol 19 (45) ◽  
pp. 6758-6777 ◽  
Author(s):  
Ceng-Ceng Du ◽  
Xin-Fang Wang ◽  
Sheng-Bin Zhou ◽  
Duo-Zhi Wang ◽  
Dianzeng Jia
Keyword(s):  
Magnetic Properties ◽  
Solid State ◽  
Band Gap ◽  
Luminescent Properties ◽  
Band Gap Energy ◽  
Gap Energy ◽  
Phenol Synthesis ◽  
Structures And Properties

New complexes based on three precursors via in situ nitration have been prepared. Moreover, the solid state UV-vis spectra and band gap energy of those complexes were investigated, and the luminescent properties (1–3, 7 and 8) and magnetic properties (3–6 and 9) were also discussed.

Growth and morphological studies of NiO/CuO/ZnO based nanostructured thin films for photovoltaic applications

2014 ◽  
Vol 68 (11) ◽  
Author(s):  
Siddharth Joshi ◽  
Mrunmaya Mudigere ◽  
L. Krishnamurthy ◽  
G. Shekar
Keyword(s):  
Thin Films ◽  
Indium Tin Oxide ◽  
Uv Spectroscopy ◽  
Layer By Layer ◽  
X Ray Diffraction ◽  
Semiconducting Materials ◽  
Morphological Studies ◽  
Layer Deposition ◽  
Ito Glass

AbstractAt present, inorganic semiconducting materials are the most economical and viable source for the renewable energy industry. The present work deals with the morphological and optical characterization of copper oxide (CuO) and zinc oxide (ZnO) thin films fabricated by layer by layer deposition on nickel oxide (NiO) coated indium tin oxide (ITO) glass by solution processing methods, mainly chemical bath deposition (CBD) and hydrothermal deposition (HTD) processes at room temperature. As a whole, the above inorganic composite materials (NiO/CuO/ZnO) can be applied in photovoltaic cells. An attempt has been made to study structural, morphological and absorption characteristics of NiO/CuO/ZnO heterojunction using state of the art techniques like X-ray diffraction (XRD), scanning electron microscopy (SEM), and UV spectroscopy. The energy band gaps of CuO and ZnO have also been calculated and discussed based on the UV spectroscopy measurements.

Ultraviolet Sensor Based on Organic/Inorganic Heterojunction between PEDOT:PSS and ZnO Nanoparticles Thin Films

2015 ◽  
Vol 1131 ◽  
pp. 157-162 ◽  
Author(s):  
Kittipong Tantisantisom ◽  
Kanpitcha Jiramitmonkon ◽  
Thanakorn Jiemsakul ◽  
Thanawee Chodjarusawad ◽  
Udom Asawapirom
Keyword(s):  
Indium Tin Oxide ◽  
Uv Light ◽  
Electrical Response ◽  
Forward Bias ◽  
Dark Field ◽  
Bias Current ◽  
Emission Model ◽  
Uv Detector ◽  
Zno Nps ◽  
Current Voltage

In this work, the ultraviolet (UV) sensors based on heterojunction between layer of zinc oxide nanoparticles (ZnO NPs) and poly (3,4-ethylenedioxythiophene):poly (styrenesulfonic acid) (PEDOT:PSS) were fabricated, characterized and studied in the electrical response to UV 365 nm. The ZnO NPs layer was solution-based coated on the top of PEDOT:PSS film on the patterned indium tin oxide (ITO) coated on glass. Aluminum was deposited as the top electrode of the device. The current-voltage (I-V) characteristic shows the rectifying behavior in the dark field. With the UV irradiation, the reverse bias current can be found and the forward bias current also highly increases. The current-voltage data fitting with the thermionic emission model shows that the potential barrier height at the heterojunction decreases with illuminating by UV light. Relative high photoresponse of the device exhibits the potential to UV detector application.

scholarly journals Comparison of electrical properties of CuO/n-Si contacts with Cu/n-Si

2020 ◽  
Vol 0 (0) ◽  
Author(s):  
Reşit Özmenteş ◽  
Cabir Temirci
Keyword(s):  
Electrical Properties ◽  
Barrier Height ◽  
Ideality Factor ◽  
Series Resistance ◽  
Reference Sample ◽  
Forward Bias ◽  
Schottky Contact ◽  
Experimental Result ◽  
Current Voltage ◽  
Capacitance Voltage

AbstractIn this study, CuO/n-Si/Al heterojunction contacts were fabricated by thermal evaporation technique. Electrical characteristics of the samples were investigated with the current-voltage (I-V), capacitance-voltage/frequency (C-V/f), and conductance-voltage (G/V) measurements at room temperature. Also, Cu/n-Si/Al Schottky contact was produced as a reference sample to investigate the electrical properties of the samples. The values of ideality factor (n), barrier height (Φb) and series resistance (Rs) of the samples were calculated from the forward bias current-voltage (I-V) and reverse bias capacitance-voltage (C-V) characteristics. Also, for checking the consistency of the results, Cheung and Norde functions were used. The experimental result values of CuO/n-Si contact were compared with the values of the reference Cu/n-Si Schottky diode. It was observed that the values of the ideality factor and barrier height of the CuO/n-Si heterojunction were higher than those of the Cu/n-Si Schottky contact, while the series resistance was lower. Also, it has been observed that the value of capacitance decreased with increasing frequency and after a certain value of frequency it was almost constant. The ideality factor of CuO/n-Si/Al heterostructure is about 2.40 and so, it is not close to the ideal behavior.

scholarly journals Poly Methyl Methacrylate (Pmma) Based Polyaniline Composite for Ammonia (Nh3) Gas Sensors

2021 ◽  
pp. 172-190
Author(s):  
Muktikanta Panigrahi ◽  
◽  
Basudam Adhikari ◽  
Keyword(s):  
Band Gap ◽  
Band Gap Energy ◽  
Dc Conductivity ◽  
Polymerization Process ◽  
Visible Absorption ◽  
Inorganic Acids ◽  
Pani Composite ◽  
Direct Band ◽  
Uv Visible

Inorganic acids (HCl, H2SO4, and H3PO4) doped-PMMA/PANI composites are prepared by in-situ technique via oxidation-polymerization process. Different techniques such as XRD, FTIR, UV-Visible, four-probe method are used to characterize the composite. Presence of different chemical group of the doped composites is analysed by ATR-FTIR spectroscopic analysis. Charge carrier behaviour of the doped composite is analyzed by UV-Visible spectroscopy. Band gap (Eg) of the doped composites is determined from UV-Visible absorption analysis using Tauc expression. The estimated direct band gap energy (Eg) is found to be 1.93 eV (for HCl doped PMMA/PANI composite), 1.19 eV (for H2SO4 doped PMMA/PANI composite), and 1.71 eV (for H3PO4 doped PMMA/PANI composite), respectively. DC-conductivity is measured with and without magnetic field. Temperature dependent DC conductivity is also measured. In addition, we were discussed the response of ammonia (NH3) gas with polyaniline-based sensor materials.

Sign in / Sign up

Export Citation Format

Share Document