Growth and morphological studies of NiO/CuO/ZnO based nanostructured thin films for photovoltaic applications

2014 ◽  
Vol 68 (11) ◽  
Author(s):  
Siddharth Joshi ◽  
Mrunmaya Mudigere ◽  
L. Krishnamurthy ◽  
G. Shekar
Keyword(s):  
Thin Films ◽  
Indium Tin Oxide ◽  
Uv Spectroscopy ◽  
Layer By Layer ◽  
X Ray Diffraction ◽  
Semiconducting Materials ◽  
Morphological Studies ◽  
Layer Deposition ◽  
Ito Glass

AbstractAt present, inorganic semiconducting materials are the most economical and viable source for the renewable energy industry. The present work deals with the morphological and optical characterization of copper oxide (CuO) and zinc oxide (ZnO) thin films fabricated by layer by layer deposition on nickel oxide (NiO) coated indium tin oxide (ITO) glass by solution processing methods, mainly chemical bath deposition (CBD) and hydrothermal deposition (HTD) processes at room temperature. As a whole, the above inorganic composite materials (NiO/CuO/ZnO) can be applied in photovoltaic cells. An attempt has been made to study structural, morphological and absorption characteristics of NiO/CuO/ZnO heterojunction using state of the art techniques like X-ray diffraction (XRD), scanning electron microscopy (SEM), and UV spectroscopy. The energy band gaps of CuO and ZnO have also been calculated and discussed based on the UV spectroscopy measurements.

Effects of Annealing on Pulsed Laser Deposited TiO2 Thin Films

2013 ◽  
Vol 446-447 ◽  
pp. 306-311 ◽  
Author(s):  
Sudhanshu Dwivedi ◽  
Somnath Biswas
Keyword(s):  
Thin Films ◽  
Pulsed Laser ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Si Substrates ◽  
Morphological Studies ◽  
Atomic Force ◽  
Deposited Films ◽  
Type Crystal

Mixed phase TiO2 thin films of rutile and anatase type crystal orientations were deposited on Si substrates by pulsed laser deposition (PLD) technique. When annealed at 800°C at 1 mbar oxygen pressure for 3 h, the deposited films transform into a single phase of rutile type. Structural and morphological studies of the as-deposited and annealed films were performed with X-ray diffraction (XRD), Fourier transform infra-red spectroscopy (FTIR), Raman spectroscopy, and atomic force microscopy (AFM). Photoluminescence (PL) spectroscopy was used for optical characterization of the annealed thin films.

Preparation and Characterization of La x C60 Thin Films Fabricated by Layer-by-Layer Deposition

1998 ◽  
Vol 6 (2) ◽  
pp. 199-212
Author(s):  
Toshifumi Terui ◽  
Yusei Maruyama ◽  
Takeshi Arai ◽  
Shinro Mashiko
Keyword(s):  
Thin Films ◽  
Layer By Layer ◽  
Layer Deposition

scholarly journals Circular economy of ITO thin films deposited on glass obtained from degraded OLED devices

2021 ◽  
Vol 40 (1) ◽  
Author(s):  
Emerson Roberto Santos ◽  
Lucas Henrique Silva de Jesus ◽  
Elvo Calixto Burini Junior ◽  
Roberto Koji Onmori ◽  
Wang Shu Hui
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Indium Tin Oxide ◽  
Circular Economy ◽  
Electrical Resistance ◽  
Layer By Layer ◽  
Electrical Measurements ◽  
Light Emitting ◽  
Ito Glass ◽  
Ito Thin Films

In this work, circular economy was investigated for commercial indium tin oxide (ITO) thin films deposited on glass substrates obtained from degraded organic light-emitting diodes (OLED). These devices were assembled and polarized at laboratory in a previous work. For each substrate, with geometry 2.5 × 2.5 cm, four OLEDs with active area of 3 × 3 mm were set up. These OLED devices were assembled with ITO as the electrode anode and successive depositions of other materials (layer-by-layer), to form the complete structure. To obtain the recovered ITO, all layers were removed from the samples containing the OLEDs previously mounted, remaining only the ITO thin films, that were cleaned with commercial product together with the received ITO/glass samples. Both samples were compared using some techniques, such as: colorimetry, electrical resistance, and Raman spectroscopy. A methodology with light-emitting diode (LED) device polarized emitting light crossing the ITO thin films was used, and the luminance with chromaticity coordinates was obtained, revealing the good transparency of the thin films. Electrical resistance of recovered ITO revealed five higher orders of magnitude in comparison to the one of received ITO. This fact can be tributed to a poly(3,4-ethylenedioxythiophene) doped with poly(styrenesulfonate) (PEDOT:PSS) layer, causing corrosion of the ITO thin films during the assembly of OLEDs or loss of the field lines created during the electrical measurements by probes of four-point probe. Raman spectroscopy did not show satisfactory results in the chemical composition analyses of the samples, but it indicated good cleaning process of the samples before the analyses.

Preparation and Characterization of BiFeO3 Film via Sol-Gel Spin-Coating Process

2011 ◽  
Vol 492 ◽  
pp. 202-205 ◽  
Author(s):  
Xi Wei Qi ◽  
Xiao Yan Zhang ◽  
Xuan Wang ◽  
Hai Bin Sun ◽  
Jian Quan Qi
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Indium Tin Oxide ◽  
Sol Gel ◽  
Secondary Phases ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Atomic Force ◽  
Ito Glass

BiFeO3 thin films were spin-coated on conductive indium tin oxide (ITO)/glass substrates by a simple sol-gel possess annealed at 470-590°C. The crystal structure of as-prepared BiFeO3 thin films annealed at different temperature was determined to be rhombohedral of R3m space and free of secondary phases was also confirmed. Cross section scanning electron microscope (SEM) pictures revealed that the thickness of BiFeO3 thin film was about 320 nm. The double remanent polarization 2Pr of BiFeO3 thin film annealed at 500°C is 2.5 μC/cm2 without applied field at room temperature. Image of atomic force microscopy indicated that the root-mean-square surface roughness value of BiFeO3 thin film was 6.13 nm.

Structural and wavelength dependent optical study of thermally evaporated Cu2Se thin films

2020 ◽  
Vol 75 (8) ◽  
pp. 781-788
Author(s):  
Brijesh Kumar Yadav ◽  
Pratima Singh ◽  
Chandreshvar Prasad Yadav ◽  
Dharmendra Kumar Pandey ◽  
Dhananjay Singh
Keyword(s):  
Thin Films ◽  
Near Infrared ◽  
Initial Step ◽  
Optical Characterization ◽  
X Ray Diffraction ◽  
Mean Values ◽  
Raman Spectroscopic ◽  
Morphological Studies ◽  
Evaporation Technique

AbstractThe present work encloses structural and optical characterization of copper (I) selenide (Cu2Se) thin films. The films having thickness 85 nm have been deposited using thermal evaporation technique in initial step of work. The structural and morphological studies of deposited thin films are then done by X-ray diffraction (XRD), scanning electron microscope (SEM), and surface profilometer measurements. Later on, ultraviolet-visible-near-infrared (UV-VIS-NIR) spectrophotometer and Raman spectroscopic measurements are performed for optical characterization of films. The structure and morphology measurements reveal that deposited material of films is crystalline. The optical band gap estimated from the optical transmission spectra of the film has been found 1.90 eV. The mean values of refractive index, extinction coefficient, real and imaginary dielectric constant are received 3.035, 0.594, 9.623, and 3.598, respectively. The obtained results are compared and analyzed for justification and application of Cu2Se thin films.

Synthesis and Characterization of Au-CdS Composite Thin Films for Photoelectrochemical Sensing of Hg2+ Ions

2015 ◽  
Vol 1088 ◽  
pp. 91-95
Author(s):  
Ping Li ◽  
Shan Huang ◽  
Hong Cheng Pan
Keyword(s):  
Thin Films ◽  
Indium Tin Oxide ◽  
Limit Of Detection ◽  
X Ray Diffraction ◽  
Simple Method ◽  
Composite Thin Films ◽  
Glass Substrates ◽  
Vis Spectroscopy ◽  
Cds Thin Films

This article presents a simple method for fabrication of Au-CdS composite thin films onto indium-tin-oxide (ITO) coated glass substrates. The method starts with electrodeposition of CdS thin films onto ITO substrates and followed by spontaneous growth of Au nanoparticles onto the CdS surface in solutions containing AuCl4- ions. X-ray diffraction (XRD) and UV-vis spectroscopy were used to investigate the Au-CdS thin films. The photoelectrochemical property and sensing for Hg2+ ions of the Au-CdS/ITO were studied. The electrode exhibits a low limit of detection of 2.5 μM and a high selectivity for Hg2+ ions, even in the presence of a large excess (1000-fold) of other metal (Na+, K+, Ca2+, Mg2+, Cd2+, Pb2+, and Zn2+) ions.

Depositing High-Performance Conductive Thin Films by Using Atomic Layer Deposition

2015 ◽  
Vol 764-765 ◽  
pp. 138-142 ◽  
Author(s):  
Fa Ta Tsai ◽  
Hsi Ting Hou ◽  
Ching Kong Chao ◽  
Rwei Ching Chang
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
High Performance ◽  
Atomic Layer ◽  
Electric Properties ◽  
X Ray Diffraction ◽  
Layer Deposition ◽  
Azo Thin Film ◽  
Aluminum Doped Zinc Oxide ◽  
Conductive Thin Films

This work characterizes the mechanical and opto-electric properties of Aluminum-doped zinc oxide (AZO) thin films deposited by atomic layer deposition (ALD), where various depositing temperature, 100, 125, 150, 175, and 200 °C are considered. The transmittance, microstructure, electric resistivity, adhesion, hardness, and Young’s modulus of the deposited thin films are tested by using spectrophotometer, X-ray diffraction, Hall effect analyzer, micro scratch, and nanoindentation, respectively. The results show that the AZO thin film deposited at 200 °C behaves the best electric properties, where its resistance, Carrier Concentration and mobility reach 4.3×10-4 Ωcm, 2.4×1020 cm-3, and 60.4 cm2V-1s-1, respectively. Furthermore, microstructure of the AZO films deposited by ALD is much better than those deposited by sputtering.

ITO Thin Films on Silicon Buffer by Sol Gel Method

2006 ◽  
Vol 514-516 ◽  
pp. 1155-1160 ◽  
Author(s):  
Talaat Moussa Hammad
Keyword(s):  
Thin Films ◽  
Indium Tin Oxide ◽  
Optical Transmission ◽  
Sol Gel ◽  
Precursor Solution ◽  
Charge Carriers ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ito Thin Films ◽  
Uv Visible

Sol gel indium tin oxide thin films (In: Sn = 90:10) were prepared by the sol-gel dipcoating process on silicon buffer substrate. The precursor solution was prepared by mixing SnCl2.2H2O and InCl3 dissolved in ethanol and acetic acid. The crystalline structure and grain orientation of ITO films were determined by X-ray diffraction. The surface morphology of the films was characterized by scanning electron microscope (SEM). Optical transmission and reflectance spectra of the films were analyzed by using a UV-visible spectrophotometer. The transport properties of majority charge carriers for these films were studied by Hall measurement. ITO thin film with electrical resistivity of 7.6 ×10-3 3.cm, Hall mobility of approximately 2 cm2(Vs)-1 and free carrier concentration of approximately 4.2 ×1020 cm-3 are obtained for films 100 nm thick films. The I-V curve measurement showed typical I-V characteristic behavior of sol gel ITO thin films.

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