Infrared Emitting HgTe Quantum Dots and Their Waveguide and Optoelectronic Devices

2015 ◽  
Vol 229 (1-2) ◽  
Author(s):  
Stephen V. Kershaw ◽  
Andrey L. Rogach

AbstractThe development of the research into the synthesis and optoelectronic applications of HgTe and related quantum dots (QDs) is reviewed, from the early days when it was felt that it might be a useful replacement for rare earths in telecom optical amplifiers, through to its more recent and broader appeal as an IR photodetector technology. Appropriately the early investigation of the material sprang from a contact with Prof. Horst Weller and his group at Hamburg University. Though the problem of Auger recombination meant that it was not so easy to make telecom amplifiers and lasers as many had hoped, it has proved to have an extraordinarily broad bandgap tuning range and just recently this has resulted in the demonstration of photodetectors in the mid- to long-IR region operating at up to 12 μm wavelength. This impressive flexibility has led to interest in HgTe QDs and optoelectronic devices based on them to be as strong as ever and growing as the prospects for commercialization improve with every narrowing in the gap between the performance of present day epitaxial devices and QD-based technology. In a further satisfying and well timed twist, Prof. Weller's 60

2020 ◽  
Vol 6 (7) ◽  
pp. eaay5225 ◽  
Author(s):  
Basudev Pradhan ◽  
Sonali Das ◽  
Jinxin Li ◽  
Farzana Chowdhury ◽  
Jayesh Cherusseri ◽  
...  

Organic-inorganic halide perovskite quantum dots (PQDs) constitute an attractive class of materials for many optoelectronic applications. However, their charge transport properties are inferior to materials like graphene. On the other hand, the charge generation efficiency of graphene is too low to be used in many optoelectronic applications. Here, we demonstrate the development of ultrathin phototransistors and photonic synapses using a graphene-PQD (G-PQD) superstructure prepared by growing PQDs directly from a graphene lattice. We show that the G-PQDs superstructure synchronizes efficient charge generation and transport on a single platform. G-PQD phototransistors exhibit excellent responsivity of 1.4 × 108 AW–1 and specific detectivity of 4.72 × 1015 Jones at 430 nm. Moreover, the light-assisted memory effect of these superstructures enables photonic synaptic behavior, where neuromorphic computing is demonstrated by facial recognition with the assistance of machine learning. We anticipate that the G-PQD superstructures will bolster new directions in the development of highly efficient optoelectronic devices.


2021 ◽  
Author(s):  
◽  
Parth Vashishtha

<p>Semiconductor quantumdots have proven to be promising materials for optoelectronic devices, such as light emitting devices (LEDs) and solar cells, due to their thin linewidth of emission, high photoluminescence quantum yield and high absorption coefficient. Over the last decade, perovskite crystals have gained significant attention due to their extraordinary optoelectronic properties. Therefore, perovskite nanocrystals combine the advantage of both crystalline perovskite and quantum dots. Here, we synthesised high quantum yield (50 - 80 %) monodispersed CsPbX₃ (X= Cl, Br, I) quantum dots, with tuneable emission spectra over the entire visible region, by a colloidal synthesis method. We have then successfully processed them to produce thin films as the emitting layer in an organic LED-type device architecture. Most importantly, we demonstrated field induced halide separation in mixed halide CsPb(Br/I)₃ NCs which is the reason color instability in these LEDs.  Perovskite nanocrystal LEDs were found to have low external quantum efficiency (EQE) due to their bulky ligands. As a result, Ruddlesden-Popper (RP) phase layered perovskite was investigated to increase the EQE over perovskite QD LEDs. As a result, we constructed RP perovskite phase CsPbX₃ LEDs with emission through the entire visible spectrum (460-700 nm). Colour tuning was achieved by taking advantage of both quantum confinement effect and halide mixing. The EQE of these LEDs outperformed the literature values in the blue and blue-green spectral regions, with relatively long life time.  We also invented a novel perovskite nanocrystals made from thalliumlead halide by replacing caesium with thallium. These materials are potential candidates for various optoelectronic applications. Size-, shape-, and composition- tuning in these nanocrystals were performed by varying the reaction conditions andmixing the halide composition. A weak confinementwas observed in these NCs. Additionally, we have shown the application of TlPbI₃ nanowires as photoconductors.  Collectively, this thesis includes the synthesis of various types of inorganic metal halide perovskite nanostructures followed by their implementation into working optoelectronic devices, specifically LEDs.</p>


2021 ◽  
Author(s):  
◽  
Parth Vashishtha

<p>Semiconductor quantumdots have proven to be promising materials for optoelectronic devices, such as light emitting devices (LEDs) and solar cells, due to their thin linewidth of emission, high photoluminescence quantum yield and high absorption coefficient. Over the last decade, perovskite crystals have gained significant attention due to their extraordinary optoelectronic properties. Therefore, perovskite nanocrystals combine the advantage of both crystalline perovskite and quantum dots. Here, we synthesised high quantum yield (50 - 80 %) monodispersed CsPbX₃ (X= Cl, Br, I) quantum dots, with tuneable emission spectra over the entire visible region, by a colloidal synthesis method. We have then successfully processed them to produce thin films as the emitting layer in an organic LED-type device architecture. Most importantly, we demonstrated field induced halide separation in mixed halide CsPb(Br/I)₃ NCs which is the reason color instability in these LEDs.  Perovskite nanocrystal LEDs were found to have low external quantum efficiency (EQE) due to their bulky ligands. As a result, Ruddlesden-Popper (RP) phase layered perovskite was investigated to increase the EQE over perovskite QD LEDs. As a result, we constructed RP perovskite phase CsPbX₃ LEDs with emission through the entire visible spectrum (460-700 nm). Colour tuning was achieved by taking advantage of both quantum confinement effect and halide mixing. The EQE of these LEDs outperformed the literature values in the blue and blue-green spectral regions, with relatively long life time.  We also invented a novel perovskite nanocrystals made from thalliumlead halide by replacing caesium with thallium. These materials are potential candidates for various optoelectronic applications. Size-, shape-, and composition- tuning in these nanocrystals were performed by varying the reaction conditions andmixing the halide composition. A weak confinementwas observed in these NCs. Additionally, we have shown the application of TlPbI₃ nanowires as photoconductors.  Collectively, this thesis includes the synthesis of various types of inorganic metal halide perovskite nanostructures followed by their implementation into working optoelectronic devices, specifically LEDs.</p>


Author(s):  
Lin Yang ◽  
Bowen Fu ◽  
Xu Li ◽  
Hao Chen ◽  
Lili Li

All inorganic perovskite quantum dots (QDs) have received great attention owing to their excellent performance in optoelectronic applications. However, they often suffer from the defect-related photoluminescence (PL) quenching and phase...


2021 ◽  
Vol 10 (1) ◽  
Author(s):  
Caroline E. Reilly ◽  
Stacia Keller ◽  
Shuji Nakamura ◽  
Steven P. DenBaars

AbstractUsing one material system from the near infrared into the ultraviolet is an attractive goal, and may be achieved with (In,Al,Ga)N. This III-N material system, famous for enabling blue and white solid-state lighting, has been pushing towards longer wavelengths in more recent years. With a bandgap of about 0.7 eV, InN can emit light in the near infrared, potentially overlapping with the part of the electromagnetic spectrum currently dominated by III-As and III-P technology. As has been the case in these other III–V material systems, nanostructures such as quantum dots and quantum dashes provide additional benefits towards optoelectronic devices. In the case of InN, these nanostructures have been in the development stage for some time, with more recent developments allowing for InN quantum dots and dashes to be incorporated into larger device structures. This review will detail the current state of metalorganic chemical vapor deposition of InN nanostructures, focusing on how precursor choices, crystallographic orientation, and other growth parameters affect the deposition. The optical properties of InN nanostructures will also be assessed, with an eye towards the fabrication of optoelectronic devices such as light-emitting diodes, laser diodes, and photodetectors.


Crystals ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 419
Author(s):  
Saradh Prasad ◽  
Mamduh J. Aljaafreh ◽  
Mohamad S. AlSalhi ◽  
Abeer Alshammari

The notable photophysical characteristics of perovskite quantum dots (PQDs) (CsPbBr3) are suitable for optoelectronic devices. However, the performance of PQDs is unstable because of their surface defects. One way to address the instability is to passivate PQDs using different organic (polymers, oligomers, and dendrimers) or inorganic (ZnS, PbS) materials. In this study, we performed steady-state spectroscopic investigations to measure the photoluminescence (PL), absorption (A), transmission (T), and reflectance (R) of perovskite quantum dots (CsPbBr3) and ethylene vinyl acetate/terpene phenol (1%) (EVA-TPR (1%), or EVA) copolymer/perovskite composites in thin films with a thickness of 352 ± 5 nm. EVA is highly transparent because of its large band gap; furthermore, it is inexpensive and easy to process. However, the compatibility between PQDs and EVA should be established; therefore, a series of analyses was performed to compute parameters, such as the band gap, the coefficients of absorbance and extinction, the index of refractivity, and the dielectric constant (real and imaginary parts), from the data obtained from the above investigation. Finally, the optical conductivities of the films were studied. All these analyses showed that the EVA/PQDs were more efficient and stable both physically and optically. Hence, EVA/PQDs could become copolymer/perovskite active materials suitable for optoelectronic devices, such as solar cells and perovskite/polymer light-emitting diodes (PPLEDs).


Author(s):  
Junke Jiang ◽  
Feng Liu ◽  
Qing Shen ◽  
Shuxia Tao

Narrow-bandgap CsSnxPb1-xI3 perovskite quantum dots (QDs) show great promise for optoelectronic applications owing to their reduced use of toxic Pb, improved phase stability, and tunable band gaps in the visible...


Author(s):  
Sudesh Yadav ◽  
Satya Ranjan Jena ◽  
Bhavya M.B. ◽  
Ali Altaee ◽  
Manav Saxena ◽  
...  

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