A review on echo and phase inverted scanning in acoustic microscopy for failure analysis

2021 ◽  
Vol 1 (3) ◽  
pp. 11-16
Author(s):  
Badrul Ahmad
Keyword(s):  
Failure Analysis ◽  
Acoustic Microscopy

Failure Analysis of Flip-Chip Interconnections Through Acoustic Microscopy

1996 ◽  
Author(s):  
O. Diaz de Leon ◽  
M. Nassirian ◽  
C. Todd ◽  
R. Chowdhury
Keyword(s):  
Failure Analysis ◽  
Large Scale ◽  
Flip Chip ◽  
Ultrasonic Waves ◽  
Acoustic Microscopy ◽  
Acoustic Microscope ◽  
Chip Technology ◽  
Ball Joints ◽  
Non Destructive ◽  
Scanning Acoustic Microscope

Abstract Integration of circuits on semiconductor devices with resulting increase in pin counts is driving the need for improvements in packaging for functionality and reliability. One solution to this demand is the Flip- Chip concept in Ultra Large Scale Integration (ULSI) applications [1]. The flip-chip technology is based on the direct attach principle of die to substrate interconnection.. The absence of bondwires clearly enables packages to become more slim and compact, and also provides higher pin counts and higher-speeds [2]. However, due to its construction, with inherent hidden structures the Flip-Chip technology presents a challenge for non-destructive Failure Analysis (F/A). The scanning acoustic microscope (SAM) has recently emerged as a valuable evaluation tool for this purpose [3]. C-mode scanning acoustic microscope (C-SAM), has the ability to demonstrate non-destructive package analysis while imaging the internal features of this package. Ultrasonic waves are very sensitive, particularly when they encounter density variations at surfaces, e.g. variations such as voids or delaminations similar to air gaps. These two anomalies are common to flip-chips. The primary issue with this package technology is the non-uniformity of the die attach through solder ball joints and epoxy underfill. The ball joints also present defects as open contacts, voids or cracks. In our acoustic microscopy study packages with known defects are considered. It includes C-SCAN analysis giving top views at a particular package interface and a B-SCAN analysis that provides cross-sectional views at a desired point of interest. The cross-section analysis capability gives confidence to the failure analyst in obtaining information from a failing area without physically sectioning the sample and destroying its electrical integrity. Our results presented here prove that appropriate selection of acoustic scanning modes and frequency parameters leads to good reliable correlation between the physical defects in the devices and the information given by the acoustic microscope.

Extending Acoustic Microscopy for Comprehensive Failure Analysis Applications

2010 ◽  
Author(s):  
Sebastian Brand ◽  
Matthias Petzold ◽  
Peter Czurratis ◽  
Peter Hoffrogge
Keyword(s):  
Image Processing ◽  
Failure Analysis ◽  
Signal Analysis ◽  
Flip Chip ◽  
Fault Isolation ◽  
Acoustic Microscopy ◽  
Specific Information ◽  
Full Potential ◽  
Time Frequency ◽  
Non Destructive

Abstract In industrial manufacturing of microelectronic components, non-destructive failure analysis methods are required for either quality control or for providing a rapid fault isolation and defect localization prior to detailed investigations requiring target preparation. Scanning acoustic microscopy (SAM) is a powerful tool enabling the inspection of internal structures in optically opaque materials non-destructively. In addition, depth specific information can be employed for two- and three-dimensional internal imaging without the need of time consuming tomographic scan procedures. The resolution achievable by acoustic microscopy is depending on parameters of both the test equipment and the sample under investigation. However, if applying acoustic microscopy for pure intensity imaging most of its potential remains unused. The aim of the current work was the development of a comprehensive analysis toolbox for extending the application of SAM by employing its full potential. Thus, typical case examples representing different fields of application were considered ranging from high density interconnect flip-chip devices over wafer-bonded components to solder tape connectors of a photovoltaic (PV) solar panel. The progress achieved during this work can be split into three categories: Signal Analysis and Parametric Imaging (SA-PI), Signal Analysis and Defect Evaluation (SA-DE) and Image Processing and Resolution Enhancement (IP-RE). Data acquisition was performed using a commercially available scanning acoustic microscope equipped with several ultrasonic transducers covering the frequency range from 15 MHz to 175 MHz. The acoustic data recorded were subjected to sophisticated algorithms operating in time-, frequency- and spatial domain for performing signal- and image analysis. In all three of the presented applications acoustic microscopy combined with signal- and image processing algorithms proved to be a powerful tool for non-destructive inspection.

Failure Analysis of Broken Stitch Bonds in TSSOP Packages Using Scanning Acoustic Microscopy (SAM) and Time Domain Reflectometry (TDR)

2004 ◽  
Author(s):  
Bilal Abd-AlRahman ◽  
Corey Lewis ◽  
Todd Simons
Keyword(s):  
Failure Analysis ◽  
Mechanical Stress ◽  
Time Domain ◽  
Open Circuit ◽  
Time Domain Reflectometry ◽  
Acoustic Microscopy ◽  
Scanning Acoustic Microscopy ◽  
Root Cause ◽  
Analysis Application

Abstract A failure analysis application utilizing scanning acoustic microscopy (SAM) and time domain reflectometry (TDR) for failure analysis has been developed to isolate broken stitch bonds in thin shrink small outline package (TSSOP) devices. Open circuit failures have occurred in this package due to excessive bending of the leads during assembly. The tools and their specific application to this technique as well as the limitations of C-SAM, TDR and radiographic analyses are discussed. By coupling C-SAM and TDR, a failure analyst can confidently determine whether the cause of an open circuit in a TSSOP package is located at the stitch bond. The root cause of the failure was determined to be abnormal mechanical stress placed on the pins during the lead forming operation. While C-SAM and TDR had proven useful in the analysis of TSSOP packages, it can potentially be expanded to other wire-bonded packages.

Failure and Stress Analysis of Cu TSVs Using GHz-Scanning Acoustic Microscopy and Scanning Infrared Polariscopy

2015 ◽  
Author(s):  
Ingrid De Wolf ◽  
Ahmad Khaled ◽  
Martin Herms ◽  
Matthias Wagner ◽  
Tatjana Djuric ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Stress Analysis ◽  
Rayleigh Waves ◽  
Acoustic Microscopy ◽  
Scanning Acoustic Microscopy ◽  
Through Silicon Vias ◽  
Stress Anisotropy ◽  
Silicon Vias ◽  
Ic Technology ◽  
Detection Of Defects

Abstract This paper discusses the application of two different techniques for failure analysis of Cu through-silicon vias (TSVs), used in 3D stacked-IC technology. The first technique is GHz Scanning Acoustic Microscopy (GHz- SAM), which not only allows detection of defects like voids, cracks and delamination, but also the visualization of Rayleigh waves. GHz-SAM can provide information on voids, delamination and possibly stress near the TSVs. The second is a reflection-based photoelastic technique (SIREX), which is shown to be very sensitive to stress anisotropy in the Si near TSVs and as such also to any defect affecting this stress, such as delamination and large voids.

Interfacial Delamination in Plastic Encapsulated Integrated Circuits (Pics)

1996 ◽  
Vol 445 ◽  
Author(s):  
Nickolaos Strifas ◽  
Aris Christou
Keyword(s):  
Integrated Circuits ◽  
Failure Analysis ◽  
Stress Corrosion ◽  
Integrated Circuit ◽  
Point Of View ◽  
Acoustic Microscopy ◽  
Electrical Performance ◽  
Premature Failure ◽  
Interfacial Delamination ◽  
Die Surface

AbstractThe reliability of plastic packaged integrated circuits was assessed from the point of view of interfacial mechanical integrity. It is shown that the effect of structural weaknesses caused by poor bonding, voids, microcracks or delamination may not be evident in the electrical performance characteristics, but may cause premature failure. Acoustic microscopy (C-SAM) was selected for nondestructive failure analysis of the plastic integrated circuit (IC) packages. Integrated circuits in plastic dual in line packages were initially subjected to temperature (25 °C to 85 °C) and humidity cycling (50 to 85 %) where each cycle was of one hour duration and for over 100 cycles and then analyzed. Delamination at the interfaces between the different materials within the package, which is a major cause of moisture ingress and subsequent premature package failure, was measured. The principal areas of delamination were found along the leads extending from the chip to the edge of the molded body and along the die surface itself. Images of the 3-D internal structure were produced that were used to determine the mechanism for a package failure. The evidence of corrosion and stress corrosion cracks in the regions of delamination was identified.

Development of Advanced Non Destructive Techniques for Failure Analysis of PCBs and PCBAs

2012 ◽  
Author(s):  
Julien Perraud ◽  
Shaïma Enouz-Vedrenne ◽  
Jean-Claude Clement ◽  
Arnaud Grivon
Keyword(s):  
Failure Analysis ◽  
Printed Circuit Board ◽  
Acoustic Microscopy ◽  
Circuit Board ◽  
Printed Circuit Board Assembly ◽  
X Ray ◽  
Printed Circuit ◽  
Advanced Analysis ◽  
Non Destructive ◽  
Non Destructive Techniques

Abstract The continuous miniaturization trends followed by a vast majority of electronic applications results in always denser PCBs (Printed Circuit Board) designs and PCBAs (Printed Circuit Board Assembly) with increasing solder joint densities. Current high-end designs feature high layer count sequential build-up PCBs with fine lines/spaces and numerous stacked filled microvias, as well as closely spaced BGA/QFN components with pitches down to 0.4mm. In recent years, several 3D packaging approaches have emerged to further increase system integration by enabling the stacking of several dies or packages. This has translated for example into the advent of highly integrated complex System in Package (SiP) modules, Package-on-Package (PoP) assemblies or chips embedded in PCBs [1]. From a failure analysis (FA) perspective, this deep technology evolution is setting extreme challenges for accurately locating a failure site, especially when destructive techniques are not desired. The few conventional non-destructive techniques like optical or x-ray inspection are now practically becoming useless for high density PCB designs. This paper reviews several advanced analysis techniques that could be used to overcome these limitations. It will be shown through several examples how three non-destructive methods usually dedicated to package analyses can be efficiently adapted to PCBs and PCBAs: • Scanning Acoustic Microscopy (SAM) • 3D X-ray Computed Tomography (CT) • Infrared Thermography A case study of a flex-rigid board FA is presented to show the efficiency of these three techniques over classical techniques. In this example, not only the defect localization has been possible, but also the defect characterization without using destructive analysis.

Scanning Acoustic Microscopy for Solder Joint Failure Analysis and Design Improvements

2008 ◽  
Author(s):  
Ramesh Varma ◽  
Jeffrey Bartolovitch ◽  
Victor Brzozowski ◽  
Carl Sokolowski
Keyword(s):  
Solder Joint ◽  
Failure Analysis ◽  
Thermal Cycling ◽  
Electrical Power ◽  
Acoustic Microscopy ◽  
Scanning Acoustic Microscopy ◽  
Joint Failure ◽  
Analysis And Design ◽  
Cte Mismatch ◽  
Bond Pads

Abstract This paper reports using Scanning Acoustic Microscopy for solder joint failure analysis and process and design improvements. There are reliability concerns associated with solder voids or non-wetting of the solder to the bond pads which is particularly important for higher electrical power or temperature applications. Defects in solder can also occur and grow during operation and thermal cycling. Sonoscan is an attractive non-destructive test to characterize solder joints and is often used to study the growth of defects during life test simulations. X-ray imaging cannot identify very small defects, particularly non-wetting and delamination because of poor resolution. The instrument used in this study was a CSAM (C-Mode Scanning Acoustic Microscopy) operating in reflection mode at 30-100 MHz. We have identified voids inherent in the solder layer as well as delamination at the package to solder and solder to heat-sink interfaces. C-SAM results confirmed that the delamination was caused by CTE mismatch of the materials as well as the mechanical stresses caused by higher level package integration and module assemblies. Thermal cycling studies have shown that typically the voids do not grow whereas delamination does. These results were used to improve thermal heat-sinking and product reliability by minimizing defects in solder joint by changes in process and mechanical designs.

Automatized failure analysis of tungsten coated TSVs via scanning acoustic microscopy

2016 ◽  
Vol 64 ◽  
pp. 370-374 ◽  
Author(s):  
E. Grünwald ◽  
J. Rosc ◽  
R. Hammer ◽  
P. Czurratis ◽  
M. Koch ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Acoustic Microscopy ◽  
Scanning Acoustic Microscopy

Challenges in Failure Analysis of 3D Bonded Wafers

2018 ◽  
Author(s):  
Pradip Sairam Pichumani ◽  
Tanya Atanasova ◽  
Frieder Baumann ◽  
Michael Hatzistergos ◽  
Jay Mody ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Interfacial Strength ◽  
Auger Spectroscopy ◽  
Acoustic Microscopy ◽  
Force Microscopy ◽  
Analysis Methodology ◽  
Confocal Scanning ◽  
Double Cantilever Beam Test

Abstract This paper discusses the Failure Analysis methodology used to characterize 3D bonded wafers during the different stages of optimization of the bonding process. A combination of different state-of-the-art techniques were employed to characterize the 3D patterned and unpatterned bonded wafers. These include Confocal Scanning Acoustic Microscopy (CSAM) to determine the existence of voids, Atomic Force Microscopy (AFM) to determine the roughness of the films on the wafers, and the Double Cantilever Beam Test to determine the interfacial strength. Focused Ion Beam (FIB) was used to determine the alignment offset in the patterns. The interface was characterized by Auger Spectroscopy and the precession electron nanobeam diffraction analysis to understand the Cu grain boundary formation.

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