Characterization of the electrical properties of advanced silicon-on-insulator (SOI) materials and transistors

2014 ◽  
pp. 52-76
Author(s):  
S. Cristoloveanu
Keyword(s):  
Electrical Properties ◽  
Silicon On Insulator

Effect of the structure of cellulose acetate membranes on their permeability, electrical conductivity and rejection

1990 ◽  
Vol 55 (12) ◽  
pp. 2933-2939 ◽  
Author(s):  
Hans-Hartmut Schwarz ◽  
Vlastimil Kůdela ◽  
Klaus Richau
Keyword(s):  
Electrical Conductivity ◽  
Electrical Properties ◽  
Cellulose Acetate ◽  
Reverse Osmosis ◽  
Water Flux ◽  
Cellulose Acetate Membrane ◽  
Structure Parameters ◽  
Dc Electrical Conductivity ◽  
Cellulose Acetate Membranes

Ultrafiltration cellulose acetate membrane can be transformed by annealing into reverse osmosis membranes (RO type). Annealing brings about changes in structural properties of the membranes, accompanied by changes in their permeability behaviour and electrical properties. Correlations between structure parameters and electrochemical properties are shown for the temperature range 20-90 °C. Relations have been derived which explain the role played by the dc electrical conductivity in the characterization of rejection ability of the membranes in the reverse osmosis, i.e. rRO = (1 + exp (A-B))-1, where exp A and exp B are statistically significant correlation functions of electrical conductivity and salt permeation, or of electrical conductivity and water flux through the membrane, respectively.

Electrical Characterization of the Graphene-SiC Heterojunction

2012 ◽  
Vol 717-720 ◽  
pp. 641-644
Author(s):  
Travis J. Anderson ◽  
Karl D. Hobart ◽  
Luke O. Nyakiti ◽  
Virginia D. Wheeler ◽  
Rachael L. Myers-Ward ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Charge Carrier ◽  
Graphene Sheet ◽  
Carrier Transport ◽  
Electrical Characterization ◽  
Epitaxial Graphene ◽  
Charge Carrier Transport ◽  
Semiconductor System ◽  
Significant Research

Graphene, a 2D material, has motivated significant research in the study of its in-plane charge carrier transport in order to understand and exploit its unique physical and electrical properties. The vertical graphene-semiconductor system, however, also presents opportunities for unique devices, yet there have been few attempts to understand the properties of carrier transport through the graphene sheet into an underlying substrate. In this work, we investigate the epitaxial graphene/4H-SiC system, studying both p and n-type SiC substrates with varying doping levels in order to better understand this vertical heterojunction.

scholarly journals Characterization of the Muscle Electrical Properties in Low Back Pain Patients by Electrical Impedance Myography

PLoS ONE ◽  
2013 ◽  
Vol 8 (4) ◽  
pp. e61639 ◽  
Author(s):  
Congo Tak-Shing Ching ◽  
Yueh-Chi Chen ◽  
Li-Hua Lu ◽  
Peiyuan F. Hsieh ◽  
Chin-Sung Hsiao ◽  
...  
Keyword(s):  
Low Back Pain ◽  
Back Pain ◽  
Electrical Properties ◽  
Electrical Impedance ◽  
Low Back ◽  
Pain Patients

SUPERCONDUCTING PROPERTIES OF BSCCO (2223) ULTRATHIN FILMS

2002 ◽  
Vol 09 (05n06) ◽  
pp. 1757-1760
Author(s):  
L. NAVARRETE ◽  
A. MARIÑO ◽  
H. SÁNCHEZ
Keyword(s):  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Structural Characterization ◽  
Ultrathin Films ◽  
Rf Magnetron Sputtering ◽  
Ex Situ ◽  
Thermal Treatments ◽  
Superconducting Properties

Ultrathin films of (Bi–Pb)–Sr–Ca–Cu–O (2223) were produced by ex situ RF magnetron sputtering on MgO (100) substrates. Films with different thermal treatments and thickness varying between 30 nm and 300 nm were obtained and studied systematically. A structural characterization of these samples was carried out and correlated with their electrical properties and thickness.

scholarly journals Graphene Oxide Layer-by-Layer Films for Sensors and Devices

Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1556
Author(s):  
Ivan C. C. Assunção ◽  
Susana Sério ◽  
Quirina Ferreira ◽  
Nykola C. Jones ◽  
Søren V. Hoffmann ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Electrical Properties ◽  
Vacuum Ultraviolet ◽  
Morphological Characterization ◽  
Linear Increase ◽  
Layer By Layer ◽  
Absorption Bands ◽  
Semiconductor Behavior ◽  
Vacuum Ultraviolet Spectroscopy

Layer-by-layer films of poly (allylamine hydrochloride) (PAH) and graphene oxide (GO) were characterized, looking at growth with the number of bilayers, morphology, and electrical properties. The PAH/GO films revealed a linear increase in absorbance with the increase in the number of deposited bilayers, allowing the determination that 10.7 ± 0.1 mg m−2 of GO is adsorbed per unit of area of each bilayer. GO absorption bands at 146, 210, 247 and 299 nm, assigned to π-π* and n-π* transitions in the aromatic ring (phenol) and of the carboxylic group, respectively, were characterized by vacuum ultraviolet spectroscopy. The morphological characterization of these films demonstrated that they are not completely uniform, with a bilayer thickness of 10.5 ± 0.7 nm. This study also revealed that the films are composed of GO and/or PAH/GO fibers and that GO is completely adsorbed on top of PAH. The electrical properties of the films reveal that PAH/GO films present a semiconductor behavior. In addition, a slight decrease in conduction was observed when films were prepared in the presence of visible light, likely due to the presence of oxygen and moisture that contributes to the damage of GO molecules.

Characterization of a Non-Interdigitated Comb Drive

2018 ◽  
Author(s):  
Mary Gopanchuk ◽  
Mohamed Arabi ◽  
N. Nelson-Fitzpatrick ◽  
Majed S. Al-Ghamdi ◽  
Eihab Abdel-Rahman ◽  
...  
Keyword(s):  
Quality Factor ◽  
Fundamental Frequency ◽  
High Quality Factor ◽  
Silicon On Insulator ◽  
Comb Drive ◽  
High Quality ◽  
Sensor Applications ◽  
Fabrication And Characterization

This paper reports on the design, fabrication, and characterization of non-interdigitated comb drive actuators in Silicon-on-Insulator (SOI) wafers, using a single mask surface microma-chining process. The response of the actuator is analyzed numerically and experimentally. The results show at the fundamental frequency; it behaves as a longitudinal comb drive actuator. At a higher frequency, it exhibits a high-quality factor which is appropriate for sensor applications.

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