Phase Transitions in Ge-Sb-Te Alloys Induced by Ion Irradiations

MRS Advances ◽  
2016 ◽  
Vol 1 (39) ◽  
pp. 2701-2709
Author(s):  
Stefania Privitera ◽  
Antonio M. Mio ◽  
Julia Benke ◽  
Christoph Persch ◽  
Emanuele Smecca ◽  
...  
Keyword(s):  
Irradiation Dose ◽  
Ion Irradiation ◽  
Ex Situ ◽  
Electrical And Optical Properties ◽  
Rocksalt Structure ◽  
Rocksalt Phase ◽  
Crystalline Films ◽  
Trigonal Structure ◽  
Trigonal Phase

ABSTRACTThe variation of the electrical and optical properties under 150 keV Ar+ ion irradiation has been studied in Ge2Sb2Te5 polycrystalline films, either in the rocksalt or in the trigonal structure, by in situ reflectivity measurements and ex situ resistance measurements. As the irradiation dose increases, the disorder introduced in the crystalline films increases and the reflectivity decreases, down to a minimum value that corresponds to complete amorphization. Large differences are found by changing the irradiation temperature, for the two crystalline structures. Indeed, the measured amorphization threshold is the same for the two crystalline phases and equal to 1x1013 cm-2 under irradiation at 77K, whilst at room temperature the trigonal phase requires a dose almost double than the rocksalt phase to be amorphized. By structural analyses we found that, before amorphization, ion irradiation induces a transition from the trigonal to the rocksalt structure. The van der Waals gaps present in the trigonal phase might act as preferential sinks for the displaced and mobile atoms, thus promoting this transition. By further increasing the irradiation dose the formed disordered rocksalt phase converts into the amorphous phase. Ion irradiation also affects the electrical properties of the material: the disorder modifies the temperature dependence of resistance of the trigonal Ge2Sb2Te5 and induces a change of sign (from metallic to insulating behavior) at a dose of 2x1013 cm-2, well below the amorphization threshold.

scholarly journals Ion-Irradiation-Induced Amorphization Of Cadmium Niobate Pyrochlore

2000 ◽  
Vol 650 ◽  
Author(s):  
A. Meldrum ◽  
K. Beaty ◽  
L. A. Boatner ◽  
C. W. White
Keyword(s):  
Electron Microscope ◽  
Ambient Temperature ◽  
Transmission Electron Microscope ◽  
Room Temperature ◽  
Ion Irradiation ◽  
Ex Situ ◽  
Temperature Dependent ◽  
Transmission Electron ◽  
Ion Energies

ABSTRACTIrradiation-induced amorphization of Cd2Nb2O7 pyrochlore was investigated by means of in-situ temperature-dependent ion-irradiation experiments in a transmission electron microscope, combined with ex-situ ion-implantation (at ambient temperature) and RBS/channeling analysis. The in-situ experiments were performed using Ne or Xe ions with energies of 280 and 1200 keV, respectively. For the bulk implantation experiments, the incident ion energies were 70 keV (Ne+) and 320 keV (Xe2+). The critical amorphization temperature for Cd2Nb2O7 is ∼480 K (280 keV Ne+) or ∼620 K (1200 keV Xe2+). The dose for in-situ amorphization at room temperature is 0.22 dpa for Xe2+, but is 0.65 dpa for Ne+ irradiation. Both types of experiments suggest a cascade overlap mechanism of amorphization. The results were analyzed in light of available models for the crystalline-to-amorphous transformation and were compared to previous ionirradiation experiments on other pyrochlore compositions.

Phase Transformations in Sol-Gel PZT Thin Films

2000 ◽  
Vol 623 ◽  
Author(s):  
D.P. Eakin ◽  
M.G. Norton ◽  
D.F. Bahr
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Room Temperature ◽  
Structural Changes ◽  
Sol Gel ◽  
Ex Situ ◽  
Ambient Conditions ◽  
Crystalline Films ◽  
In Situ Heating

AbstractThin films of PZT were deposited onto platinized and bare single crystal NaCl using spin coating and sol-gel precursors. These films were then analyzed using in situ heating in a transmission electron microscope. The results of in situ heating are compared with those of an ex situ heat treatment in a standard furnace, mimicking the heat treatment given to entire wafers of these materials for use in MEMS and ferroelectric applications. Films are shown to transform from amorphous to nanocrystalline over the course of days when held at room temperature. While chemical variations are found between films crystallized in ambient conditions and films crystallized in the vacuum conditions of the microscope, the resulting crystal structures appear to be insensitive to these differences. Significant changes in crystal structure are found at 500°C, primarily the change from largely amorphous to the beginnings of clearly crystalline films. Crystallization does occur over the course of weeks at room temperature in these films. Structural changes are more modest in these films when heated in the TEM then those observed on actual wafers. The presence of Pt significantly influences both the resulting structure and morphology in both in situ and ex situ heated films. Without Pt present, the films appear to form small, 10 nm grains consisting of both cubic and tetragonal phases, whereas in the case of the Pt larger, 100 nm grains of a tetragonal phase are formed.

Direct Observation of Single Displacement Cascade in Pyrochlore by Tv-Rate In-Situ TEM and Ex-Situ HRTEM

2001 ◽  
Vol 7 (S2) ◽  
pp. 408-409
Author(s):  
J. Lian ◽  
L. M. Wang ◽  
S. X. Wang ◽  
R. C. Ewing
Keyword(s):  
Ion Irradiation ◽  
Heavy Ion ◽  
Ex Situ ◽  
In Situ Tem ◽  
Direct Impact ◽  
Displacement Cascade ◽  
Amorphous Domain ◽  
Rapid Kinetics ◽  
Kinetics Of

The ion irradiation-induced crystalline-to-amorphous transformation has been studied in many complex ceramics. Direct impact amorphization has been considered to be one of the fundamental amorphization mechanisms for complex ceramics under heavy ion irradiation . Based on the directimpact model, a highly energetic incident ion transfers its kinetic energy to the target as a thermal spike within 10“13 sec creating a “molten-like” displacement cascade, typically nanometer-scaled in diameter (as indicated by the result of a computer simulation in Fig. 1). This “molten” zone quickly quenches to a small amorphous domain within a few pico-seconds. Epitaxial recrystallization occurs around the amorphous/crystalline interface, so that the size of amorphous domains decrease with time. The accumulation and overlap of small amorphous domains eventually leads to complete amorphization of the irradiated material. Although the in-situTEM technique with the setup shown in Fig. 2 has been extensively applied to the study of the amorphization process in complex ceramics, most of the previous studies relied on in-situobservation of the electron diffraction pattern, and there has been a lack of solid evidence of direct impact amorphization due to the small nature of the cascades and the rapid kinetics of its evolution.

Ex situ and In situ Infrared Spectroelectrochemical Investigations of  V 2 O 5 Crystalline Films

1999 ◽  
Vol 146 (1) ◽  
pp. 232-242 ◽  
Author(s):  
Angela Šurca ◽  
Boris Orel ◽  
Goran Dražič ◽  
Boris Pihlar
Keyword(s):  
Ex Situ ◽  
Crystalline Films

Swift Heavy Ion Irradiation on Quasicrystals

2003 ◽  
Vol 805 ◽  
Author(s):  
Ratnamala Chatterjee
Keyword(s):  
Ion Irradiation ◽  
Heavy Ion ◽  
Ex Situ ◽  
X Ray Diffraction ◽  
Resistivity Measurements ◽  
Heavy Ion Irradiation ◽  
Swift Heavy Ion ◽  
Before And After ◽  
Level Of Understanding

ABSTRACTThe present level of understanding of the effects of irradiation of quasicrystalline targets with swift heavy ions has been reviewed here. The results of systematic deposition of large amount of energy densities (12 keV/nm < (dE/dx)e < 40 keV/nm) in Al-Cu-Fe based system are discussed in terms of resistivity measurements (in-situ measurements of resistivity changes with increasing flux (ions/cm2) and ex-situ resistivity vs temperature measurements before and after irradiation) & standard and high-resolution X-ray diffraction measurements made before and after irradiation. The studies are aimed at understanding the changes that may occur in these alloys as a result of the relaxation of such highly excited states of matter. Also, we attempt to learn whether such changes are typical to the long-range quasicrystallinity of the system or not.

Point-Defect Migration in Crystalline Si: Impurity Content, Surface and Stress Effects

1998 ◽  
Vol 532 ◽  
Author(s):  
S. Coffa ◽  
S. Libertino ◽  
A. La Magna ◽  
V. Privitera ◽  
G. Mannino ◽  
...  
Keyword(s):  
Point Defect ◽  
Leakage Current ◽  
Room Temperature ◽  
Ion Irradiation ◽  
Deep Level ◽  
Ion Beam ◽  
Impurity Content ◽  
Ex Situ ◽  
Defect Migration

ABSTRACTThe results of several recent experiments aimed at assessing the room temperature migration properties of interstitials (D) and vacancies (V) in ion implanted crystalline Si are reviewed. We show that combining the results of ex-situ techniques (deep level transient spectroscopy and spreading resistance profilometry) and in-situ leakage current measurements new and interesting information can be achieved. It has been found that at room temperature I and V, generated by an ion beam, undergo fast long range migration (with diffusivities higher than 10−1 cm2/sec) which is interrupted by trapping at impurities (C, O) or dopant atoms and by recombination at surface. Analysis of two-dimensional migration of point defects injected through a photolithographically defined mask shows that a strong I recombination (characterized by a coefficient of 30 μm−1) occurs at the sample surface. Moreover, we have found that the strain field induced by an oxide or a nitride mask significantly affects defect migration and produces a strong anisotropy of the defect diffusivity tensor. Finally, using in-situ leakage current measuremens, performed both during and just after ion irradiation, the time scale of point defect evolution at room temperature has been determined and defect diffusivities evaluated. The implications of these results on our current understanding of defect and diffusion phenomena in Si are discussed.

scholarly journals The ion-irradiation tolerance of the pyrochlore to fluorite Ho(x)Yb(2-x)TiO5 and Er2TiO5 compounds: A TEM comparative study using both in-situ and bulk ex-situ irradiation approaches

2018 ◽  
Vol 507 ◽  
pp. 316-326 ◽  
Author(s):  
Robert D. Aughterson ◽  
Gregory R. Lumpkin ◽  
Katherine L. Smith ◽  
Massey de los Reyes ◽  
Joel Davis ◽  
...  
Keyword(s):  
Comparative Study ◽  
Ion Irradiation ◽  
Ex Situ

In situ Transmission Electron Microscopy Investigation of Radiation Effects

2005 ◽  
Vol 20 (7) ◽  
pp. 1654-1683 ◽  
Author(s):  
R.C. Birtcher ◽  
M.A. Kirk ◽  
K. Furuya ◽  
G.R. Lumpkin ◽  
M-O. Ruault
Keyword(s):  
Radiation Effects ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Ex Situ ◽  
In Situ Observation ◽  
Dislocation Loops ◽  
Transmission Electron ◽  
Microscopy Investigation ◽  
Ion Impact

In situ observation is of great value in the study of radiation damage utilizing electron or ion irradiation. We summarize the facilities and give examples of work found around the world. In situ observations of irradiation behavior have fallen into two broad classes. One class consists of long-term irradiation, with observations of microstructural evolution as a function of the radiation dose in which the advantage of in situ observation has been the maintenance of specimen position, orientation, and temperature. A second class has involved the recording of individual damage events in situations in which subsequent evolution would render the correct interpretation of ex situ observations impossible. In this review, examples of the first class of observation include ion-beam amorphization, damage accumulation, plastic flow, implant precipitation, precipitate evolution under irradiation, and damage recovery by thermal annealing. Examples of the second class of observation include single isolated ion impacts that produce defects in the form of dislocation loops, amorphous zones, or surface craters, and single ion impact-sputtering events. Experiments in both classes of observations attempt to reveal the kinetics underlying damage production, accumulation, and evolution.

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