scholarly journals Neutron tunneling in nanostructured systems: isotopical effect

MRS Advances ◽  
2018 ◽  
Vol 3 (42-43) ◽  
pp. 2609-2616
Author(s):  
A. Matiwane ◽  
J. Sackey ◽  
M.L. Lekala ◽  
A. Gibaud ◽  
M. Maaza
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Bound States ◽  
Total Reflection ◽  
Fabry Perot ◽  
Nanostructured Systems ◽  
Nickel Isotopes ◽  
Tunneling Phenomenon ◽  
First Time ◽  
Tunneling Resonances

AbstractThis contribution reports, to the best of our knowledge, for the first time on the neutron tunneling phenomenon in nickel isotopes based nanostructured. More accurately, 58Ni-62Ni-58Ni thin films Fabry-Perot resonator configuration exhibited several tunneling resonances. In total, there were 7 tunneling resonances. These tunneling resonances manifest themselves via sharp dips in the total reflection plateau due to quasi-bound states in the nanostructured isotopic based nickel thin film Fabry-Perot resonator.

scholarly journals Detection of nitroaromatic vapours with diketopyrrolopyrrole thin films: exploring the role of structural order and morphology on thin film properties and fluorescence quenching efficiency

2015 ◽  
Vol 51 (6) ◽  
pp. 1143-1146 ◽  
Author(s):  
Monika Warzecha ◽  
Jesus Calvo-Castro ◽  
Alan R. Kennedy ◽  
Alisdair N. Macpherson ◽  
Kenneth Shankland ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Fluorescence Quenching ◽  
Optical Detection ◽  
Film Properties ◽  
Structural Order ◽  
Quenching Efficiency ◽  
First Time

Sensitive optical detection of nitroaromatic vapours with diketopyrrolopyrrole thin films is reported for the first time.

Fe doping-stabilized γ-Ga2O3 thin films with a high room temperature saturation magnetic moment

2020 ◽  
Vol 8 (2) ◽  
pp. 536-542 ◽  
Author(s):  
Yuanqi Huang ◽  
Ang Gao ◽  
Daoyou Guo ◽  
Xia Lu ◽  
Xiao Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetic Moment ◽  
Room Temperature ◽  
Fe Doping ◽  
Saturation Magnetic Moment ◽  
First Time

A thermostable Fe-doped γ-Ga2O3 thin film with a high room temperature saturation magnetic moment of 5.73 μB/Fe has been obtained for the first time.

Extrapolation of critical thickness of GaN thin films from lattice constant data using synchrotron X-ray

1996 ◽  
Vol 423 ◽  
Author(s):  
Chinkyo Kim ◽  
I. K. Robinson ◽  
Jaemin Myoung ◽  
Kyuhwan Shim ◽  
Kyekyoon Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Critical Thickness ◽  
Energy Estimate ◽  
Accurate Estimate ◽  
X Ray ◽  
Lattice Constants ◽  
Pseudomorphic Growth ◽  
Sudden Transition ◽  
First Time

AbstractIn some materials, Van der Merwe's equilibrium theory of strain relief is believed to explain the sudden transition from pseudomorphic growth of a thin film to a progressively relaxed state. We show, for the first time for GaN, how an accurate estimate of the critical thickness of a thin film can be extrapolated from suitable measurements of lattice constants as a function of film thickness using synchrotron X-ray. We do this both for an elementary elastic energy function, in which the interactions between the dislocations are ignored, and for a more realistic energy estimate due to Kasper. The method is found to work quantitatively for thin films of GaN on AIN. The critical thickness is determined to be 29 ± 4 Å.

scholarly journals Interaction of light with lead halide perovskites: A review

2019 ◽  
Vol 2 (2) ◽  
pp. 67
Author(s):  
Zhiya Dang ◽  
Duc Anh Dinh
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Light Illumination ◽  
Low Light ◽  
Practical Applications ◽  
Halide Perovskites ◽  
Halide Perovskite ◽  
First Time ◽  
Lead Halide ◽  
Sample Environment

Lead halide perovskites are the new rising generation of semiconductor materials due to their unique optical and electrical properties. The investigation of the interaction of halide perovskites and light is a key issue not only for understanding their photophysics but also for practical applications. Hence, tremendous efforts have been devoted to this topic and brunch into two: (i) decomposition of the halide perovskites thin films under light illumination; and (ii) influence of light soaking on their photoluminescence (PL) properties. In this review, we for the first time thoroughly compare the illumination conditions and the sample environment to correlate the PL changes and decomposition of perovskite under light illumination. In the case of vacuum and dry nitrogen, PL of the halide perovskite (MAPbI3–xClx, MAPbBr3–xClx, MAPbI3) thin films decreases due to the defects induced by light illumination, and under high excitations, the thin film even decomposes. In the presence of oxygen or moisture, light induces the PL enhancement of halide perovskite (MAPbI3) thin films at low light illumination, while increasing the excitation, which causes the PL to quench and perovskite thin film to decompose. In the case of mixed halide perovskite ((MA)Pb(BrxI1-x)3) light induces reversible segregation of Br domains and I domains. 

Solution-deposited pure selenide CIGSe solar cells from elemental Cu, In, Ga, and Se

2015 ◽  
Vol 3 (38) ◽  
pp. 19263-19267 ◽  
Author(s):  
Dandan Zhao ◽  
Qingwen Tian ◽  
Zhengji Zhou ◽  
Gang Wang ◽  
Yuena Meng ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solar Cells ◽  
Solar Cell ◽  
Thin Film Solar Cell ◽  
Solution Processed ◽  
Low Toxicity ◽  
Solution Route ◽  
First Time

A novel, robust and low-toxicity solution route to deposit CIGSe thin films for solar cell applications is proposed. The solvent of 1,2-ethanedithiol and 1,2-ethylenediamine is employed for the first time to simultaneously dissolve elemental Cu, In, Ga, and Se. With this solution-processed CIGSe thin film solar cell, an efficiency of 9.5% was achieved.

Low Temperature Poly-Si Layers Deposited by Hot Wire CVD Yielding a Mobility of 4.0 cm2V−1s−1 in Top Gate Thin Film Transistors

2000 ◽  
Vol 609 ◽  
Author(s):  
R.E.I. Schropp ◽  
J.K. Rath ◽  
B. Stannowski ◽  
C.H.M. Van Der Werf ◽  
Y. Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
High Electron ◽  
Hot Wire ◽  
High Electron Mobility ◽  
Cvd Method ◽  
First Time

ABSTRACTDirect deposition of polycrystalline silicon (poly-Si) thin films by the Hot Wire CVD method has been used for the first time for the fabrication of poly-Si top gate Thin Film Transistors (TFTs). The TFTs have a high electron mobility in saturation of up to 4 cm2V−1s−1 as well as a remarkably large ON/OFF ratio of up to 6 × 105.

Optical properties of organometal halide perovskite thin films and general device structure design rules for perovskite single and tandem solar cells

2015 ◽  
Vol 3 (17) ◽  
pp. 9152-9159 ◽  
Author(s):  
Chang-Wen Chen ◽  
Sheng-Yi Hsiao ◽  
Chien-Yu Chen ◽  
Hao-Wei Kang ◽  
Zheng-Yu Huang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Optical Constants ◽  
Structure Design ◽  
Device Structure ◽  
Design Rules ◽  
Tandem Solar Cells ◽  
Organometal Halide Perovskite ◽  
Halide Perovskite ◽  
First Time

The optical constants of a CH3NH3PbI3−xClxperovskite thin film were acquired for the first time.

Interfacial Adhesion of Pure-Silica-Zeolite Low-k Thin Films

2005 ◽  
Vol 875 ◽  
Author(s):  
Lili Hu ◽  
Junlan Wang ◽  
Zijian Li ◽  
Shuang Li ◽  
Yushan Yan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Interfacial Adhesion ◽  
Interfacial Strength ◽  
Laser Spallation ◽  
Si Substrates ◽  
Low Dielectric ◽  
Pure Silica ◽  
Film Substrate ◽  
First Time

AbstractNanoporous zeolite thin films are promising candidates as future low dielectric constant (low-k) materials. During the integration process with other semiconductor materials, the residual stresses resulting from the synthesis processes may cause fracture or delamination of the thin films. In order to achieve high quality low-k zeolite thin films, the evaluation of the adhesion performance is important. In this paper, laser spallation technique is utilized to investigate the interfacial adhesion of zeolite thin film-Si substrate interfaces prepared using three different processes. The experimental results demonstrate that the nature of the deposition method has a great effect on the resulted interfacial adhesion of the film-substrate interfaces. This is the first time that the interfacial strength of zeolite thin films-Si substrates is quantitatively evaluated. The results have great significance in the future applications of low-k zeolite thin film materials.

Analysis of Specific Interfaces in Thin Films by X-Ray Fluorescence Using Interference Effect in Total Reflection

1995 ◽  
Vol 39 ◽  
pp. 695-700
Author(s):  
Kenji Sakurai ◽  
Atsuo Iida
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Standing Wave ◽  
Interference Effect ◽  
High Sensitivity ◽  
Grazing Incidence ◽  
Analytical Tool ◽  
Total Reflection ◽  
X Ray ◽  
Detailed Interpretation

It has been proposed that the interference effect in grazing incidence/exit X-ray fluorescence can be used as an analytical tool. Though these total reflection related measurements have been widely used because of their inherent high sensitivity to the surface of materials, the interference in case of thin films is most likely to be considered difficult to analyze. The present paper describes the use of the interference effect to provide additional capability to enhance information on a specific interface of a thin film. Detailed interpretation of the angular resolved fluorescence tells us at which interface an element of interest is localized. It can be applied to the thin film of only a few layers or non-periodic multilayers where a regular standing wave is not generated.

scholarly journals Interaction of light with lead halide perovskites: A review

2018 ◽  
Vol 1 (4) ◽  
Author(s):  
Zhiya Dang 1 ◽  
Duc Anh Dinh 1
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Light Illumination ◽  
Low Light ◽  
Practical Applications ◽  
Halide Perovskites ◽  
Halide Perovskite ◽  
First Time ◽  
Lead Halide ◽  
Sample Environment

Lead halide perovskites are the new rising generation of semiconductor materials due to theirunique optical and electrical properties. The investigation of the interaction of halide perovskites and light is a key issue not only for understanding theirphotophysicsbut also for practical applications. Hence, tremendous efforts have been devoted to this topic andbrunch into two:(i)decompositionof the halide perovskites thin films under light illumination and(ii)influence of light soaking on their photoluminescence (PL) properties. In this review, we for the first time thoroughly compare the illumination conditions and the sample environment to correlate the PL changes and decomposition of perovskite under light illumination. Inthe case of vacuum and dry nitrogen, PL of the halide perovskite ( PbI3–xClx, PbBr3–xClx, MAPbI3) thin films decreases due to the defects induced by light illumination, and under high excitations the thin film even decomposes. In thepresence of oxygen or moisture,light induces the PL enhancement of halide perovskite (MAPbI3) thin films at low light illumination, while increasing the excitationcauses the PL to quench and perovskite thin film to decompose. In the case of mixed halide perovskite (MAPb(BrxI1-x)3) light inducesreversible segregation of Br domains and I domains. 

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