Online monitor of heavy ion flux in an ion irradiation apparatus for semiconductor irradiation test

2008 ◽  
Vol 589 (3) ◽  
pp. 345-349
Author(s):  
Takahiro Makino ◽  
Masayuki Hagiwara ◽  
Toshiro Itoga ◽  
Mamoru Baba
Keyword(s):  
Ion Irradiation ◽  
Heavy Ion ◽  
Ion Flux ◽  
Irradiation Test ◽  
Irradiation Apparatus ◽  
Online Monitor

scholarly journals A Methodology for Reconstructing DSET Pulses from Heavy-Ion Broad-Beam Measurements

2020 ◽  
Vol 4 (1) ◽  
pp. 15
Author(s):  
Takahiro Makino ◽  
Shinobu Onoda ◽  
Takeshi Ohshima ◽  
Daisuke Kobayashi ◽  
Hirokazu Ikeda ◽  
...  
Keyword(s):  
Pulse Width ◽  
Ion Irradiation ◽  
Estimation Method ◽  
Heavy Ion ◽  
Current Data ◽  
Oxide Semiconductor ◽  
Single Event Transient ◽  
Flip Flop ◽  
Irradiation Test ◽  
Width Distribution

A table-based method for the estimation of heavy-ion-induced Digital Single Event Transient (DSET) voltage pulse-width in a single logic cell has been developed. The estimation method is based on the actual heavy-ion-induced transient current data in a single metal-oxide-semiconductor field effect transistor (MOSFET) used in the logic cell. The DSET pulse waveform in an inverter is obtained from which the pulse-width was estimated to be 420 ps. This DSET pulse-width value (420 ps) falls within the reasonable range of the DSET pulse-width distribution measured by the self-triggering flip-flop latch chain under heavy-ion irradiation test conditions.

Heavy ion irradiation test to gas electron multipliers

2008 ◽  
Author(s):  
Asami Hayato ◽  
Toru Tamagawa ◽  
Koji Abe ◽  
Satoshi Nakamura ◽  
Iwahashi Takanori ◽  
...  
Keyword(s):  
Ion Irradiation ◽  
Heavy Ion ◽  
Heavy Ion Irradiation ◽  
Irradiation Test

scholarly journals Heavy-Ion Induced Single Event Upsets in Advanced 65 nm Radiation Hardened FPGAs

Electronics ◽  
2019 ◽  
Vol 8 (3) ◽  
pp. 323 ◽  
Author(s):  
Chang Cai ◽  
Xue Fan ◽  
Jie Liu ◽  
Dongqing Li ◽  
Tianqi Liu ◽  
...  
Keyword(s):  
Ion Irradiation ◽  
Random Access ◽  
Heavy Ion ◽  
Radiation Environment ◽  
Single Event Upsets ◽  
Irradiation Test ◽  
Field Programmable ◽  
Radiation Hardened ◽  
Modular Redundancy ◽  
High Linear Energy Transfer

The 65 nm Static Random Access Memory (SRAM) based Field Programmable Gate Array (FPGA) was designed and manufactured, which employed tradeoff radiation hardening techniques in Configuration RAMs (CRAMs), Embedded RAMs (EBRAMs) and flip-flops. This radiation hardened circuits include large-spacing interlock CRAM cells, area saving debugging logics, the redundant flip-flops cells, and error mitigated 6-T EBRAMs. Heavy ion irradiation test result indicates that the hardened CRAMs had a high linear energy transfer threshold of upset ∼18 MeV/(mg/cm 2 ) with an extremely low saturation cross-section of 6.5 × 10 − 13 cm 2 /bit, and 71% of the upsets were single-bit upsets. The combinational use of triple modular redundancy and check code could decline ∼86.5% upset errors. Creme tools were used to predict the CRAM upset rate, which was merely 8.46 × 10 − 15 /bit/day for the worst radiation environment. The effectiveness of radiation tolerance has been verified by the irradiation and prediction results.

Electron and ion irradiation-induced dissolution of mechanical twins in the intermetalic U3Si: An in situ HVEM study

1989 ◽  
Vol 47 ◽  
pp. 652-653
Author(s):  
Charles W. Allen ◽  
Robert C. Birtcher
Keyword(s):  
Elevated Temperatures ◽  
Ion Irradiation ◽  
Ion Beam ◽  
National Laboratory ◽  
Argonne National Laboratory ◽  
Heavy Ion ◽  
High Energy ◽  
Mechanical Twinning ◽  
In Situ Experiments

The uranium silicides, including U3Si, are under study as candidate low enrichment nuclear fuels. Ion beam simulations of the in-reactor behavior of such materials are performed because a similar damage structure can be produced in hours by energetic heavy ions which requires years in actual reactor tests. This contribution treats one aspect of the microstructural behavior of U3Si under high energy electron irradiation and low dose energetic heavy ion irradiation and is based on in situ experiments, performed at the HVEM-Tandem User Facility at Argonne National Laboratory. This Facility interfaces a 2 MV Tandem ion accelerator and a 0.6 MV ion implanter to a 1.2 MeV AEI high voltage electron microscope, which allows a wide variety of in situ ion beam experiments to be performed with simultaneous irradiation and electron microscopy or diffraction.At elevated temperatures, U3Si exhibits the ordered AuCu3 structure. On cooling below 1058 K, the intermetallic transforms, evidently martensitically, to a body-centered tetragonal structure (alternatively, the structure may be described as face-centered tetragonal, which would be fcc except for a 1 pet tetragonal distortion). Mechanical twinning accompanies the transformation; however, diferences between electron diffraction patterns from twinned and non-twinned martensite plates could not be distinguished.

Sound velocity of glassy Pd 80 Si 20 after heavy-ion irradiation at low temperatures

2002 ◽  
Vol 82 (11) ◽  
pp. 2333-2339
Author(s):  
G. Schumacher ◽  
R. C. Birtcher ◽  
D. P. Renusch ◽  
M. Grimsditch ◽  
L. E. Rehn
Keyword(s):  
Sound Velocity ◽  
Low Temperatures ◽  
Ion Irradiation ◽  
Heavy Ion ◽  
Heavy Ion Irradiation

Exploration of heavy ion irradiation effects on gate oxide reliability in power MOSFETs

1995 ◽  
Vol 35 (3) ◽  
pp. 603-608 ◽  
Author(s):  
S.R. Anderson ◽  
R.D. Schrimpf ◽  
K.F. Galloway ◽  
J.L. Titus
Keyword(s):  
Ion Irradiation ◽  
Gate Oxide ◽  
Heavy Ion ◽  
Irradiation Effects ◽  
Power Mosfets ◽  
Heavy Ion Irradiation ◽  
Oxide Reliability

scholarly journals The impact of fluence dependent 120 MeV Ag swift heavy ion irradiation on the changes in structural, electronic, and optical properties of AgInSe2 nano-crystalline thin films for optoelectronic applications

RSC Advances ◽  
2021 ◽  
Vol 11 (42) ◽  
pp. 26218-26227
Author(s):  
R. Panda ◽  
S. A. Khan ◽  
U. P. Singh ◽  
R. Naik ◽  
N. C. Mishra
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Ion Irradiation ◽  
Heavy Ion ◽  
Swift Heavy Ion Irradiation ◽  
Heavy Ion Irradiation ◽  
Swift Heavy Ion ◽  
Nano Crystalline ◽  
Shi Irradiation ◽  
The Impact

Swift heavy ion (SHI) irradiation in thin films significantly modifies the structure and related properties in a controlled manner.

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