Fabrication of Sr2Nb2O7 thin films by sol-gel processing

1995 ◽  
Vol 10 (3) ◽  
pp. 704-707 ◽  
Author(s):  
Alamanda V. Prasadarao ◽  
Ulagaraj Selvaraj ◽  
Sridhar Komarnenici
Keyword(s):  
Thin Films ◽  
Perovskite Phase ◽  
Sol Gel ◽  
Precursor Solution ◽  
Si Substrates ◽  
Niobium Ethoxide ◽  
First Time ◽  
Gel Processing ◽  
Room Temperature Dielectric Constant ◽  
Sem Microstructure

Sol-gel Sr2Nb2O7 thin films were deposited on Si(100) and Pt-coated Si substrates for the first time by spin-coating. The Sr2Nb2O7 precursor solution was prepared from strontium metal dissolved in 2-methoxyethanol, acetylacetone, and niobium ethoxide. The formation of phase pure Sr2Nb2O7 occurred via an intermediate perovskite phase of composition close to Sr0.82NbO3. Crack-free Sr2Nb2O7 films of ∼0.4 μm thickness were deposited on these substrates using a single-coating followed by heat treatment at 850 °C for 12 h. SEM microstructure and thin film XRD results indicated the deposition of a grain-oriented film on the Pt-coated Si substrate. The room temperature dielectric constant and the loss values of the film measured at 10 kHz are 45 and 0.045, respectively.

Phase transition and piezoelectricity of sol–gel-processed Sm-doped BiFeO3 thin films on Pt(111)/Ti/SiO2/Si substrates

2015 ◽  
Vol 3 (9) ◽  
pp. 2115-2122 ◽  
Author(s):  
Wei Sun ◽  
Jing-Feng Li ◽  
Qi Yu ◽  
Li-Qian Cheng
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Sol Gel ◽  
Orthorhombic Phase ◽  
High Quality ◽  
Si Substrates ◽  
Bifeo3 Thin Films ◽  
Gel Processing

We prepared high-quality Bi1−xSmxFeO3 films on Pt(111)/Ti/SiO2/Si substrates by sol–gel processing and found rhombohedral–orthorhombic phase transition with enhanced piezoelectricity.

Synthesis and Ferroelectric Properties of Sol–Gel Derived Intergrowth-Superlattice-Structured SrBi4Ti4O15-Bi4Ti3O12 Thin Films

2011 ◽  
Vol 197-198 ◽  
pp. 1781-1784
Author(s):  
Hua Wang ◽  
Jian Li ◽  
Ji Wen Xu ◽  
Ling Yang ◽  
Shang Ju Zhou
Keyword(s):  
Thin Films ◽  
Remanent Polarization ◽  
Annealing Temperature ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Hysteresis Loops ◽  
Si Substrates ◽  
Gel Processing ◽  
Coercive Electric Field ◽  
Clockwise Hysteresis

Intergrowth-superlattice-structured SrBi4Ti4O15–Bi4Ti3O12(SBT–BIT) films prepared on p-Si substrates by sol-gel processing. Synthesized SBT–BIT films exhibit good ferroelectric properties. As the annealing temperature increases from 600°C to 700°C, the remanent polarization Prof SBT–BIT films increases, while the coercive electric field Ecdecreases. SBT–BIT films annealed at 700°C have a Prvalue of 18.9µC/cm2which is higher than that of SBT (16.8µC/cm2) and BIT (14.6µC/cm2), and have the lowest Ecof 142 kV/cm which is almost the same as that of SBT and BIT. The C-V curves of Ag/SBT-BIT/p-Si heterostructures show the clockwise hysteresis loops which reveal the memory effect due to the polarization. The memory window in C-V curve of Ag/SBT-BIT/p-Si is larger than that of Ag/SBT/p-Si heterostructure or Ag/BIT/p-Si heterostructure.

Effects of Sputter-Deposited LaNiO3 Electrode on the Deposition and Properties of Ferroelectric Thin Films

1996 ◽  
Vol 433 ◽  
Author(s):  
T. B. Wu ◽  
J. M. Wu ◽  
C. M. Wu ◽  
M. J. Shyu ◽  
M. S. Chen ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Perovskite Phase ◽  
Sol Gel ◽  
Processing Condition ◽  
Fatigue Property ◽  
Rf Magnetron Sputtering ◽  
Ferroelectric Films ◽  
Si Substrates ◽  
Sputter Deposited

AbstractHighly (100)-textured thin film of metallic LaNiO3 (LNO) was grown on the Pt/Ti/SiO2/Si substrates by rf magnetron sputtering at ˜300°C, which was used as a bottom electrode to prepare highly (100)-textured ferroelectric films. Examples on the deposition of PbTiO3, (Pbl−xLax)TiO3, Pb(Zr0.53Ti0.47)O3, Pb[(Mg1/3Nb2/3)1−xTix]O3, and (Ba1−xSrx)TiO3 thin films by rf magnetron sputtering or sol-gel method are shown. A reduction of temperature for perovskite phase formation can be achieved, especially for those difficult to crystallize. The surface roughness of the ferroelectric films is also improved as compared to that of films deposited on conventional Pt electrode. Although the electrical properties of the ferroelectric films are affected by the out-diffusion of LNO when a higher temperature was used in the preparation of the films, under an appropriate processing condition, the highly (100)-textured films can have satisfactory electrical characteristics for application. Moreover, the polarization-fatigue property can be also improved by the use of LNO electrode.

PVP-Mediated Crystallization of Perovskite Phase in the PMN-PT Thin Films Prepared by Sol-Gel Processing

2010 ◽  
Vol 93 (3) ◽  
pp. 686-691 ◽  
Author(s):  
Zehui H. Du ◽  
Tianshu S. Zhang ◽  
Minmin M. Zhu ◽  
Jan Ma
Keyword(s):  
Thin Films ◽  
Perovskite Phase ◽  
Sol Gel ◽  
Gel Processing

PREPARATION AND STRUCTURE CHARACTERIZATION OF BiFeO3-SrBi2Nb2O9 THIN FILMS ON SILICON BY SOL-GEL PROCESSING

2002 ◽  
Vol 16 (28n29) ◽  
pp. 4455-4459
Author(s):  
HAOSHUANG GU ◽  
WANQIANG CAO ◽  
JUNMIN XUE ◽  
JOHN WANG
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Precursor Solution ◽  
Monomethyl Ether ◽  
Structure Characterization ◽  
Layered Perovskite ◽  
Heat Treated ◽  
Average Grain Size ◽  
Gel Processing

A new system 0.1 BiFeO 3-0.9 SrBi 2 Nb 2 O 9 thin films have been successfully prepared by an ethanolamine-modified sol-gel technique. The precursor solution was synthesized from compounds, Bi(NO 3)3· 5H 2 O , Sr(NO 3)2, Fe(NO 3)3· 9H 2 O and Nb(OC 2 H 5)5 in solution ethylene glycol monomethyl ether. The thin films were deposited on Si single crystal by spinning coating, and heat-treated at temperatures ranging from 400°C to 700°C. Crystallization of thin films occurred at about 500 ~ 600°C and the films exhibit a pure phase of layered perovskite ferroelectric structure. The grain of films is well distributed and the average grain size of the film is about 100nm.

OPTIMIZATION OF PROCESSING TEMPERATURE TO ACHIEVE HIGH QUALITY SOL–GEL-DERIVED PZT THIN FILM

2009 ◽  
Vol 08 (03) ◽  
pp. 299-303 ◽  
Author(s):  
SAJJAD DEHGHANI ◽  
ABDOLGHAFAR BARZEGAR ◽  
MOHAMMAD HOSSEIN SHEIKHI
Keyword(s):  
Thin Films ◽  
Spin Coating ◽  
Perovskite Phase ◽  
Sol Gel ◽  
Morphological Properties ◽  
Processing Temperature ◽  
High Quality ◽  
Pzt Thin Films ◽  
Polarization Voltage ◽  
Si Substrates

Ferroelectric PbZr 1-x Ti x O 3 (PZT) thin films have been extensively investigated because of their excellent piezoelectric, pyroelectric, ferroelectric, and dielectric properties. Sol–gel synthesis and spin-coating are popular routes to the formation of high quality, dense, and crack-free thin films. In this work, high quality, crack-free PZT thin films have been prepared by sol–gel method via spin-coating on Pt/Ti/SiO2/Si substrate by different temperature processings. The crystallographic and morphological properties of the films have been analyzed by X-ray diffraction and scanning electron microscopy. The electrical properties of thin films including the permittivity, loss tangent, and polarization–voltage hysteresis loop were measured and compared for different films. Finally, by optimizing temperature processing, highly textured and high quality films of PZT with perovskite phase were obtained on Pt/Ti/SiO2/Si substrates.

Thin films of LiNb 0.5 Ta 0.5 O 3 prepared on SiO 2 /Si substrates by sol-gel processing

1999 ◽  
Author(s):  
Shi De Cheng ◽  
Chan Hin Kam ◽  
Yan Zhou ◽  
Yee Loy Lam ◽  
Yuen Chuen Chan ◽  
...  
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Si Substrates ◽  
Gel Processing

Mössbauer Spectra of 57Fe-Enriched BiFeO3 Thin Films Fabricated on SiO2/Si Substrates by Chemical Solution Deposition Process

2013 ◽  
Vol 582 ◽  
pp. 63-66 ◽  
Author(s):  
Kiyotaka Tanaka ◽  
Yoshinori Tsukamoto ◽  
Soichiro Okamura ◽  
Yutaka Yoshida
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Perovskite Phase ◽  
Precursor Solution ◽  
Deposition Process ◽  
Molar Ratio ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Si Substrates ◽  
Mixture Phase

sup>57Fe-enriched BiFeO3 (BFO) thin films were fabricated on SiO2/Si substrates from a stoichiometric precursor solution by chemical solution deposition process. The Bi/Fe molar ratio of the thin films decreased from 0.95 to 0.80 with increase in the sintering temperature. A perovskite phase and flat surface were obtained in the BFO thin films sintered at 500 and 600 °C. However, the 57Fe Mössbauer spectra showed a mixture phase due to amorphous and/or Bi2Fe4O9 phases in the BFO thin films. The valence state of Fe ions of the BFO thin films was confirmed to be only Fe3+ by the Mössbauer spectra.

Ferroelectric Thin Films Via Sol-Gel Processing of Singlesource Precursors

1993 ◽  
Vol 310 ◽  
Author(s):  
C.D. Chandler ◽  
M.J. Hampden-Smith ◽  
R.W. Schwartz
Keyword(s):  
Thin Films ◽  
Perovskite Phase ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Dip Coating ◽  
Mixed Metal Oxide ◽  
Mixed Metal ◽  
Oxide Powders ◽  
Metal Organic ◽  
Gel Processing

AbstractThe use of single-source mixed metal-organic precursors specifically designed for the formation of crystalline perovskite phase mixed metal oxide powders has been investigated. Pyridine solutions of divalent metal α-hydroxycarboxylates of general empirical formula A(O2CCMe2OH)2 where A = Pb, Ca, Sr, Ba; Me = methyl, were designed to react with metal alkoxides, for example, Ti(O-i-Pr)4, with the elimination of two equivalents of alcohol to form species with fixed A:B stoichiometry of 1:1 according to the equation: A(O2CCMe2OH)2 + B(OR)4 → A(O2CCMe2O)2B(OR)2 + 2HOR. Hydrolysis of these compounds in pyridine produces clear solutions which on removal of the solvent in vacuo, yield yellow powders. These powders readily dissolve in ethanol to give solutions from which thin films can be formed either by dip-coating or spin coating. The crystallization behavior, composition and ferroelectric properties of these films is discussed. The crystallization of the films generally required substantially higher temperatures compared to powders obtained from the same precursor solutions.

Dielectric and Ferroelectric Properties of Modified BiFeO3-PbTiO3 Thin Films Derived from Sol-gel Processing

2003 ◽  
Vol 784 ◽  
Author(s):  
JinRong Cheng ◽  
L. Eric Cross
Keyword(s):  
Thin Films ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Pyrochlore Phase ◽  
Xrd Analysis ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Gel Processing ◽  
Room Temperature Dielectric Constant

ABSTRACTIn this paper, thin films of La- modified (Bi,La)FeO3-PbTiO3 (BLF-PT) morphotropic phase boundary (MPB) solid solutions have been prepared by using sol-gel processing. A thin Pb(Zr,Ti)O3 (PZT) template layer was introduced to make BLF-PT thin films adhere tightly to the platinized silicon (Pt/Ti/SiO2/Si) substrate. X-ray diffraction (XRD) analysis revealed that BLF-PT thin films were of the perovskite structure without detectable pyrochlore phase annealing at 650–750°C. The cross sectional and plain view images of or our specimen were observed by using the scan electrical microscope (SEM). The room temperature dielectric constant K and tanδ were of ∼800 and 4% respectively, for BLF-PT thin films using a measurement frequency of 1 kHz. Our preliminary experiments indicated that the sol-gel derived BLF-PT thin films have good insulation resistance and measurable dielectric and ferroelectric responses.

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