Gas-phase diffusion and surface reaction as limiting mechanisms in the aerosol-assisted chemical vapor deposition of TiO2 films from titanium diisopropoxide

2006 ◽  
Vol 21 (12) ◽  
pp. 3205-3209 ◽  
Author(s):  
A. Conde-Gallardo ◽  
M. Guerrero ◽  
R. Fragoso ◽  
N. Castillo
Keyword(s):  
Chemical Vapor Deposition ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Surface Reaction ◽  
Crystalline Silicon ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
Thermal Reaction ◽  
Phase Diffusion ◽  
Wide Range

Titanium dioxide thin films were deposited on crystalline silicon (100) substrates by delivering a liquid aerosol of titanium-diisopropoxide. The evidence of a metalorganic chemical vapor deposition process observed in the crystalline and morphological features of the films is strongly supported by the behavior of the growth rate rg as a function of the deposition temperature. The rg line shape indicates that in a wide range of temperatures (∼180–400 °C), the film formation is limited by both gas-phase diffusion of some molecular species toward the substrate surface and the thermal reaction of those species on that surface. The activation energy EA that characterizes the surface reaction depends somewhat on the precursor concentration; a fitting procedure to an equation that takes into account both limiting mechanisms (gas-phase diffusion + surface reaction) yields EA ≃ 27.6 kJ/mol.

Computational Study of Reactive Flow in Halide Chemical Vapor Deposition of Silicon Carbide Epitaxial Film

2008 ◽  
Author(s):  
Rong Wang ◽  
Ronghui Ma
Keyword(s):  
Chemical Vapor Deposition ◽  
Gas Phase ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Computational Study ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Large Temperature ◽  
Processing Conditions ◽  
Wide Range

In this study, a comprehensive transport model is developed for Halide Chemical Vapor Deposition (HCVD) system which includes gas dynamics, heat and mass transfer, gas-phase and surface chemistry, and radio-frequency induction heating. This model addresses transport of multiple chemical species in high temperature environment with large temperature difference and complex chemical reactions in gas-phase and on the deposition surface. Numerical modeling of the deposition process in a horizontal hot-wall reactor using SiCl4/C3H8/H2 as precursors has been performed over a wide range of operational parameters to quantify the effects of processing parameters on the film growth. The simulations of the deposition process provide detailed information on the gas-phase composition as well as the distributions of gas velocity and temperature in the reactor. The deposition rate on the substrate surface is also predicted. The results illustrate that deposition temperature and the flow rate of carrier gas play an important role in determining the processing conditions and deposition rate. A high concentration of HCl exists in the growth chamber and the etching of the SiC films by HCl has significant effect on the deposition rate. The modeling approach can be further used to improve reactor design and optimization of processing conditions.

Growth of Ge-on-Si Structures using Remote Plasma-Enhanced Chemical Vapor Deposition

1992 ◽  
Vol 281 ◽  
Author(s):  
Rong Z. Qian ◽  
D. Kinosky ◽  
A. Mahajan ◽  
S. Thomas ◽  
J. Fretwell ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
Buffer Layers ◽  
Remote Plasma ◽  
Tem Analysis ◽  
Cross Sectional ◽  
Si Substrates ◽  
Wide Range

ABSTRACTRemote Plasma-enhanced Chemical Vapor Deposition (RPCVD) has been successfully used to grow GexSi1−x/Si (x = 0.1 – 1.0) heteroepitaxial structures at low temperatures (∼450°C). This technique utilizes a noble gas (Ar or He) r-f plasma to decompose reactant gases (SiH4 and GeH4) and drive the chemical deposition reactions in the gas phase as well as on the substrate surface. Growth of pure Ge on Si is of great interest because it provides a promising technique for making suitable low-cost substrates for thin-film Ge photodetectors as well as GaAs devices on Si substrates. The realization of these applications depends on the ability to grow high-quality epitaxial Ge layers on Si substrates. Since GaAs is lattice matched to Ge, growth of Ge layers on Si substrates with good crystalline perfection would permit the integration of GaAs and Si devices. Islanding was observed after the growth of pure Ge films directly on Si(100) for a wide range of plasma powers (7W ∼ 16W) in RPCVD. Cross-sectional TEM analysis showed that the islands have complicated facet structures, including {311} planes. Graded Gex Si1−x buffer layers with different Ge profiles have been used prior to the growth of Ge. It was found that uniform Ge films can be obtained using a buffer with an abrupt Ge profile, and the dislocation density in the Ge film decreases with increasing distance from the substrate.

Preparation of MoS2 thin films by chemical vapor deposition

1994 ◽  
Vol 9 (6) ◽  
pp. 1474-1483 ◽  
Author(s):  
Woo Y. Lee ◽  
Theodore M. Besmann ◽  
Michael W. Stott
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Thermodynamic Analysis ◽  
Vapor Deposition ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
Precursor Concentration ◽  
Wide Range ◽  
Thermochemical Stability

The chemical vapor deposition (CVD) of MoS2 by reaction of H2S with molybdenum halides was determined to be thermodynamically favored over a wide range of temperature, pressure, and precursor concentration conditions as long as excess H2S was available. The thermochemical stability of H2S, MoF6, and MoCI5 was also assessed to address their suitability as precursors for the CVD of MoS2. The results from the thermodynamic analysis were used as guidance in the deposition of MoS2 thin films from MoF6 and H2S. The (002) basal planes of MoS2 films deposited above 700 K were preferentially oriented perpendicular to the substrate surface.

Graphene chemical vapor deposition at very low pressure: The impact of substrate surface self-diffusion in domain shape

2014 ◽  
Vol 105 (7) ◽  
pp. 073104 ◽  
Author(s):  
T. H. R. Cunha ◽  
J. Ek-Weis ◽  
R. G. Lacerda ◽  
A. S. Ferlauto
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Self Diffusion ◽  
Domain Shape ◽  
The Impact

The SiNx films process research by plasma-enhanced chemical vapor deposition in crystalline silicon solar cells

2017 ◽  
Vol 31 (16-19) ◽  
pp. 1744101 ◽  
Author(s):  
Bitao Chen ◽  
Yingke Zhang ◽  
Qiuping Ouyang ◽  
Fei Chen ◽  
Xinghua Zhan ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Solar Cell ◽  
Vapor Deposition ◽  
Gas Flow ◽  
Silicon Solar Cell ◽  
Crystalline Silicon ◽  
Chemical Vapor ◽  
Double Layers ◽  
Crystalline Silicon Solar Cell

SiNx thin film has been widely used in crystalline silicon solar cell production because of the good anti-reflection and passivation effect. We can effectively optimize the cells performance by plasma-enhanced chemical vapor deposition (PECVD) method to change deposition conditions such as temperature, gas flow ratio, etc. In this paper, we deposit a new layer of SiNx thin film on the basis of double-layers process. By changing the process parameters, the compactness of thin films is improved effectively. The NH3passivation technology is augmented in a creative way, which improves the minority carrier lifetime. In sight of this, a significant increase is generated in the photoelectric performance of crystalline silicon solar cell.

scholarly journals Gas Phase Chemistry of Trimethylboron in Thermal Chemical Vapor Deposition

2017 ◽  
Vol 121 (47) ◽  
pp. 26465-26471 ◽  
Author(s):  
Mewlude Imam ◽  
Laurent Souqui ◽  
Jan Herritsch ◽  
Andreas Stegmüller ◽  
Carina Höglund ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Thermal Chemical Vapor Deposition ◽  
Gas Phase Chemistry ◽  
Phase Chemistry

scholarly journals Gas-phase aluminium acetylacetonate decomposition: Revision of the current mechanism by VUV synchrotron radiation

2021 ◽  
Author(s):  
Sebastian Grimm ◽  
Seung-Jin Baik ◽  
Patrick Hemberger ◽  
Andras Bodi ◽  
Andreas Kempf ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Synchrotron Radiation ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Aluminium Oxide ◽  
Chemical Vapor ◽  
Phase Decomposition ◽  
Common Precursor ◽  
Current Mechanism

Although aluminium acetylacetonate, Al(C5H7O2)3, is a common precursor for chemical vapor deposition (CVD) of aluminium oxide, its gas phase decomposition is not very well investigated. Here, we studied its thermal...

Sign in / Sign up

Export Citation Format

Share Document