Crack-free III-nitride structures (> 3.5 μm) on silicon

2011 ◽  
Vol 1324 ◽  
Author(s):  
Mihir Tungare ◽  
Jeffrey M. Leathersich ◽  
Neeraj Tripathi ◽  
Puneet Suvarna ◽  
Fatemeh (Shadi) Shahedipour-Sandvik ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
High Electron Mobility Transistor ◽  
Poor Quality ◽  
Organic Chemical ◽  
High Electron ◽  
Large Area ◽  
Si Substrates ◽  
Substrate Engineering ◽  
Gan On Si

ABSTRACTIII-nitride structures on Si are of great technological importance due to the availability of large area, epi ready Si substrates and the ability to heterointegrate with mature silicon micro and nanoelectronics. High voltage, high power density, and high frequency attributes of GaN make the III-N on Si platform the most promising technology for next-generation power devices. However, the large lattice and thermal mismatch between GaN and Si (111) introduces a large density of dislocations and cracks in the epilayer. Cracking occurs along three equivalent {1−100} planes which limits the useable device area. Hence, efforts to obtain crack-free GaN on Si have been put forth with the most commonly reported technique being the insertion of low temperature (LT) AlN interlayers. However, these layers tend to further degrade the quality of the devices due to the poor quality of films grown at a lower temperature using metal organic chemical vapor deposition (MOCVD). Our substrate engineering technique shows a considerable improvement in the quality of 2 μm thick GaN on Si (111), with a simultaneous decrease in dislocations and cracks. Dislocation reduction by an order of magnitude and crack separation of > 1 mm has been achieved. Here we combine our method with step-graded AlGaN layers and LT AlN interlayers to obtain crack-free structures greater than 3.5 μm on 2” Si (111) substrates. A comparison of these film stacks before and after substrate engineering is done using atomic force microscopy (AFM) and optical microscopy. High electron mobility transistor (HEMT) devices developed on a systematic set of samples are tested to understand the effects of our technique in combination with crack reduction techniques. Although there is degradation in the quality upon the insertion of LT AlN interlayers, this degradation is less prominent in the stack grown on the engineered substrates. Also, this methodology enables a crack-free surface with the capability of growing thicker layers.

scholarly journals MOCVD Growth and Investigation of InGaN/GaN Heterostructure Grown on AlGaN/GaN-on-Si Template

2019 ◽  
Vol 9 (9) ◽  
pp. 1746
Author(s):  
Haruka Matsuura ◽  
Takeyoshi Onuma ◽  
Masatomo Sumiya ◽  
Tomohiro Yamaguchi ◽  
Bing Ren ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
High Electron Mobility Transistor ◽  
Initial Step ◽  
Poor Quality ◽  
Crystalline Quality ◽  
High Electron ◽  
Mocvd Growth ◽  
Gan On Si ◽  
Gan Heterostructure

The investigation of the III-V nitride-based driving circuits is in demand for the development of GaN-based power electronic devices. In this work, we aim to grow high-quality InGaN/GaN heterojunctions on the n-channel AlGaN/GaN-on-Si high electron mobility transistor (HEMT) templates to pursue the complementary p-channel conductivity to realize the monolithic integrated circuits. As the initial step, the epitaxial growth is optimized and the structure properties are investigated by comparing with the InGaN/GaN heterojunctions grown on GaN/sapphire templates. It is found that both the In composition and relaxation degree are higher for the InGaN/GaN on the HEMT template than that on the sapphire substrate. The crystalline quality is deteriorated for the InGaN grown on the HEMT template, which is attributed to the poor-quality GaN channel in the HEMT template. Further analysis indicates that the higher In incorporation in the InGaN layer on the HEMT template may be caused by the higher relaxation degree due to the compositional pulling effect. An increase in the growth temperature by 20 °C with optimized growth condition improves the crystalline quality of the InGaN, which is comparable to that on GaN/sapphire even if it is grown on a poor-quality GaN channel.

Epitaxial Growth of InAlN/GaN Heterostructures on Silicon Substrates in a Single Wafer Rotating Disk MOCVD Reactor

MRS Advances ◽  
2017 ◽  
Vol 2 (5) ◽  
pp. 329-334 ◽  
Author(s):  
Jing Lu ◽  
Jie Su ◽  
Ronald Arif ◽  
George D. Papasouliotis ◽  
Ajit Paranjpe
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Chemical Vapor ◽  
Rotating Disk ◽  
High Electron Mobility Transistor ◽  
Xrd Analysis ◽  
Structural Quality ◽  
Organic Chemical ◽  
High Electron ◽  
Mocvd Reactor ◽  
Metal Organic

ABSTRACTInAlN films and InAlN/GaN high electron mobility transistor (HEMT) structures were demonstrated on 150mm <111> Si using Veeco’s Propel single wafer metal-organic chemical vapor deposition (MOCVD) system. Smooth surfaces with root mean square (rms) roughness of 0.68 nm were observed in a 5x5 μm2 atomic force microscope (AFM) scan. X-ray diffraction (XRD) analysis shows well-defined layer peaks and fringes, indicating good structural quality and abrupt layer interfaces. Thickness uniformity of InAlN is 0.87%, 1σ, for a 7-point XRD measurement across the 150 mm wafer. Secondary ion mass spectrometry (SIMS) analysis confirms the uniform indium depth profile and the presence of abrupt layer interfaces. Negligible Ga (< 100 ppm, atomic) incorporation was detected in the InAlN bulk film. Film sheet resistance of 230Ω/sq, charge of 2.1×1013/cm2, and mobility of 1270 cm2/V.s were measured on a prototypical InAlN/GaN HEMT structure comprising a 10 nm-thick, 17% indium, InAlN barrier.

Metal-Organic chemical vapor deposition of BN on sapphire and its heterostructures with 2D and 3D materials

MRS Advances ◽  
2016 ◽  
Vol 1 (32) ◽  
pp. 2273-2283
Author(s):  
Qing Paduano ◽  
Michael Snure
Keyword(s):  
Electron Mobility ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
High Electron Mobility Transistor ◽  
Layer Growth ◽  
Organic Chemical ◽  
Layer By Layer ◽  
High Electron ◽  
Two Dimensional ◽  
Direct Growth

ABSTRACTWe studied MOCVD processing for direct growth of BN on 2” sapphire substrates as a template for heterostructures with two dimensional (2D) and three dimensional (3D) materials. The combined experimental evidence points to three growth modes for BN: self-terminating, 3D random, and layer-by-layer, all of which are dependent on V/III ratio, temperature, pressure, and substrate surface modification via nitridation. At moderate temperature (950-1050°C), BN growth using high V/III ratio is self-terminating, resulting in c-oriented films aligned in-plane with respect to the orientation of the sapphire substrate. BN films grown under low V/III ratios are 3D, randomly oriented, and nano-crystalline. At higher temperature (1100°C), self-terminating growth transitions to a continuous layer-by-layer growth mode. When BN growth is self-terminating, films exhibit atomically smooth surface morphology and highly uniform thickness over a 2” sapphire wafer. Using these BN/sapphire templates we studied the growth of 2D and 2D/3D heterostructures. To study direct growth of 2D on 2D layered material we deposited graphene on BN in a continued process within the same MOCVD system. Furthermore, we explore the growth and nucleation of 3D materials (GaN and AlN) on BN. AlGaN/GaN based high electron mobility transistor (HEMT) structures grown on BN/sapphire exhibited two-dimensional electron gas characteristics at the AlGaN/GaN heterointerface, with room-temperature electron mobility and sheet electron density about 1900cm2/Vs and 1x1013cm-2, respectively.

Growth Characteristics of AlGaN/GaN HEMTs on Patterned Si (111) Substrates Using Double AlN Interlayers by MOCVD

2011 ◽  
Vol 396-398 ◽  
pp. 372-375 ◽  
Author(s):  
Yong Wang ◽  
Nai Sen Yu ◽  
Cong Shun Wang ◽  
Kei May Lau
Keyword(s):  
Chemical Vapor ◽  
High Electron Mobility Transistors ◽  
Growth Conditions ◽  
Growth Characteristics ◽  
Organic Chemical ◽  
High Electron ◽  
Si Substrates ◽  
Electron Mobility Transistors ◽  
Thermal Expansion Coefficients ◽  
Gan Hemts

AlGaN/GaN high electron mobility transistors (HEMTs) were grown on un-patterned, patterned without mask, and patterned with mask Si (111) substrates by metal organic chemical vapor deposition (MOCVD). The patterns on the Si substrates were fabricated by SiO2 masks and wet etching. Double AlN interlayers grown at high temperature were employed to relax the tensile stress induced by the large mismatches in the lattice constants and the thermal expansion coefficients. Growth characteristics of AlGaN/GaN HEMTs were discussed and analyzed. Before achieving optimized growth conditions, more cracking lines were observed on patterns along the [1-100] orientation than along the [11-20] orientation, resulted from more stable GaN (1-100) facets than GaN (11-20) facets. It is suggested that long patterns should be made along the [11-20] orientation. Micro-Raman measurements showed that Raman shifts at the concave corners are bigger than those at the convex corners, indicating the presence of the larger stress at the concave corners.

scholarly journals High Quality InAs Grown on Silicon Substrate

2019 ◽  
Author(s):  
liu jinan
Keyword(s):  
Vapor Deposition ◽  
Growth Process ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
High Quality ◽  
Si Substrates ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Structural Characterizations

We have investigated growth of InAs on Si substrates by metal organic chemical vapor deposition. The main investigation is the effect of incorporating more nucleation layers into the growth process. The addition of more nucleation layers clearly correlates with the surface morphology and quality of the InAs layer. Morphological and structural characterizations prove that a perfect quality InAs layer is achieved by incorporating five nucleation layers.

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