MOCVD Growth and Investigation of InGaN/GaN Heterostructure Grown on AlGaN/GaN-on-Si Template

The investigation of the III-V nitride-based driving circuits is in demand for the development of GaN-based power electronic devices. In this work, we aim to grow high-quality InGaN/GaN heterojunctions on the n-channel AlGaN/GaN-on-Si high electron mobility transistor (HEMT) templates to pursue the complementary p-channel conductivity to realize the monolithic integrated circuits. As the initial step, the epitaxial growth is optimized and the structure properties are investigated by comparing with the InGaN/GaN heterojunctions grown on GaN/sapphire templates. It is found that both the In composition and relaxation degree are higher for the InGaN/GaN on the HEMT template than that on the sapphire substrate. The crystalline quality is deteriorated for the InGaN grown on the HEMT template, which is attributed to the poor-quality GaN channel in the HEMT template. Further analysis indicates that the higher In incorporation in the InGaN layer on the HEMT template may be caused by the higher relaxation degree due to the compositional pulling effect. An increase in the growth temperature by 20 °C with optimized growth condition improves the crystalline quality of the InGaN, which is comparable to that on GaN/sapphire even if it is grown on a poor-quality GaN channel.

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Crack-free III-nitride structures (> 3.5 μm) on silicon

MRS Proceedings ◽

10.1557/opl.2011.961 ◽

2011 ◽

Vol 1324 ◽

Cited By ~ 2

Author(s):

Mihir Tungare ◽

Jeffrey M. Leathersich ◽

Neeraj Tripathi ◽

Puneet Suvarna ◽

Fatemeh (Shadi) Shahedipour-Sandvik ◽

...

Keyword(s):

Chemical Vapor ◽

High Electron Mobility Transistor ◽

Poor Quality ◽

Organic Chemical ◽

High Electron ◽

Large Area ◽

Si Substrates ◽

Substrate Engineering ◽

Gan On Si

ABSTRACTIII-nitride structures on Si are of great technological importance due to the availability of large area, epi ready Si substrates and the ability to heterointegrate with mature silicon micro and nanoelectronics. High voltage, high power density, and high frequency attributes of GaN make the III-N on Si platform the most promising technology for next-generation power devices. However, the large lattice and thermal mismatch between GaN and Si (111) introduces a large density of dislocations and cracks in the epilayer. Cracking occurs along three equivalent {1−100} planes which limits the useable device area. Hence, efforts to obtain crack-free GaN on Si have been put forth with the most commonly reported technique being the insertion of low temperature (LT) AlN interlayers. However, these layers tend to further degrade the quality of the devices due to the poor quality of films grown at a lower temperature using metal organic chemical vapor deposition (MOCVD). Our substrate engineering technique shows a considerable improvement in the quality of 2 μm thick GaN on Si (111), with a simultaneous decrease in dislocations and cracks. Dislocation reduction by an order of magnitude and crack separation of > 1 mm has been achieved. Here we combine our method with step-graded AlGaN layers and LT AlN interlayers to obtain crack-free structures greater than 3.5 μm on 2” Si (111) substrates. A comparison of these film stacks before and after substrate engineering is done using atomic force microscopy (AFM) and optical microscopy. High electron mobility transistor (HEMT) devices developed on a systematic set of samples are tested to understand the effects of our technique in combination with crack reduction techniques. Although there is degradation in the quality upon the insertion of LT AlN interlayers, this degradation is less prominent in the stack grown on the engineered substrates. Also, this methodology enables a crack-free surface with the capability of growing thicker layers.

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MOCVD Grown AlGaN/GaN Transistors on Si Substrate for High Power Device Applications

Materials Science Forum ◽

10.4028/www.scientific.net/msf.711.195 ◽

2012 ◽

Vol 711 ◽

pp. 195-202 ◽

Cited By ~ 1

Author(s):

S. Lawrence Selvaraj ◽

Takashi Egawa

Keyword(s):

Figure Of Merit ◽

High Electron Mobility Transistor ◽

Extensive Study ◽

High Electron ◽

Si Substrate ◽

Mocvd Growth ◽

Device Applications ◽

High Figure ◽

Gan On Si

An extensive study on the use of Si as a substrate for the growth of AlGaN/GaN layers for High-Electron-Mobility Transistor (HEMT) were studied and reported in this article. We have used thick buffers to grow high resistive i-GaN by MOCVD which offers a high breakdown voltage. While the leakage through buffer and substrate can be controlled by thick buffer, the leakage through gate is controlled using a thin 2-nm in-situ grown i-GaN cap layer. We have evidenced a high figure of merit (BV2/RON) of 2.6 x 108 V2Ω-1cm-2 for AlGaN/GaN HEMTs grown on 4-inch Si substrate. The challenges before the MOCVD growth of GaN on Si is also discussed in detail.

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Analysis of strain and dislocation evolution during MOCVD growth of an AlGaN/GaN power high-electron-mobility transistor structure

Japanese Journal of Applied Physics ◽

10.7567/1347-4065/ab138e ◽

2019 ◽

Vol 58 (SC) ◽

pp. SCCD26 ◽

Cited By ~ 1

Author(s):

Mikhail Rudinsky ◽

Eugene Yakovlev ◽

Roman Talalaev ◽

Tomas Novak ◽

Petr Kostelnik ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

Transistor Structure ◽

High Electron Mobility ◽

Mocvd Growth

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Sub-50nm indium phosphide high electron mobility transistor technology for terahertz monolithic microwave integrated circuits and systems

2013 International Conference on Indium Phosphide and Related Materials (IPRM) ◽

10.1109/iciprm.2013.6562646 ◽

2013 ◽

Cited By ~ 1

Author(s):

Stephen Sarkozy ◽

Xiaobing Mei ◽

Wayne Yoshida ◽

Po-Hsin Liu ◽

Ling-Shine Lee ◽

...

Keyword(s):

Integrated Circuits ◽

Indium Phosphide ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

Microwave Integrated Circuits ◽

High Electron Mobility ◽

Monolithic Microwave Integrated Circuits

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Millimeter-wave GaN-based HEMT development at ETH-Zürich

International Journal of Microwave and Wireless Technologies ◽

10.1017/s1759078710000164 ◽

2010 ◽

Vol 2 (1) ◽

pp. 33-38 ◽

Cited By ~ 4

Author(s):

Haifeng Sun ◽

Diego Marti ◽

Stefano Tirelli ◽

Andreas R. Alt ◽

Hansruedi Benedickter ◽

...

Keyword(s):

Millimeter Wave ◽

High Speed ◽

Low Cost ◽

High Electron Mobility Transistor ◽

High Resistivity ◽

High Electron ◽

Cutoff Frequencies ◽

Gan Hemts ◽

The Difference ◽

Gan On Si

We review the AlGaN/GaN high electron mobility transistor (HEMT) activities in the Millimeter-Wave Electronics Group at ETH-Zürich. Our group's main thrust in the AlGaN/GaN arena is the extension of device bandwidth to higher frequency bands. We demonstrated surprising performances for AlGaN/GaN HEMTs grown on high-resistivity (HR) silicon (111) substrates, and extended cutoff frequencies of 100 nm gate devices well into the millimeter (mm)-wave domain. Our results narrow the performance gap between GaN-on-SiC (or sapphire) and GaN-on-silicon and establish GaN-on-Si as a viable technology for low-cost mm-wave electronics. We here contrast the difference in behaviors observed in our laboratory between nominally identical devices built on high-resistivity silicon (HR-Si) and on sapphire substrates; we show high-speed devices with high-cutoff frequencies and breakdown voltages which combine fT,MAX × BV products as high as 5–10 THz V, and show AlGaN/GaN HEMTs with fT values exceeding 100 GHz on HR-Si. Although the bulk of our activities have so far focused on AlGaN/GaN HEMTs on HR-Si, our process produces excellent device performances when applied to GaN HEMTs on SiC as well: 100 nm gate transistors with fT > 125 GHz have been realized at ETH-Zürich.

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Side Effects in a HEMT Performance with InAlN/GaN

TELKOMNIKA Indonesian Journal of Electrical Engineering ◽

10.11591/tijee.v15i2.1537 ◽

2015 ◽

Vol 15 (2) ◽

pp. 249

Author(s):

Z. Kourdi ◽

B. Bouazza ◽

A. Guen-Bouazza ◽

M. Khaouani

Keyword(s):

Side Effects ◽

Current Density ◽

High Frequency ◽

Density Ratio ◽

High Electron Mobility Transistor ◽

Maximum Efficiency ◽

High Electron ◽

X Band ◽

Cutting Frequency ◽

Gan Heterostructure

We present a simulation of a HEMT (high electron mobility transistor) structure. We extract the device characteristics through the analysis of DC, AC and high frequency regimes, as shown in this paper. This work demonstrates the optimal device with a gate length of 30 nm, and InAlN/GaN heterostructure for minimizing side effects. The simulated with Silvaco software of the HEMT devices with the materials InAlN show very good scalability in different application. We have demonstrated an excellent current density, as high as 644 mA/mm, a peak extrinsic transconductance of 710 mS/mm at VDS=2 V, and cutting frequency cutoffs of 385 GHZ, maximum frequency of 810 GHz, maximum efficiency of 23% for x-Band, maximum breakdown voltage of 365 V, and an ON/OFF current density ratio higher than 8 x 108. These values were determined through the simulation by hydrodynamics models, which makes that optimize the design is the future of this technology.

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