Dependence of 4H-SiC Epitaxial Layer Quality on Growth Conditions with Wafer Size Corresponding to 150 mm

2012 ◽  
Vol 1433 ◽  
Author(s):  
Chiaki Kudou ◽  
Kentaro Tamura ◽  
Takashi Aigo ◽  
Wataru Ito ◽  
Johji Nishio ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Carrier Concentration ◽  
Epitaxial Layer ◽  
Radial Direction ◽  
Defect Density ◽  
Growth Conditions ◽  
Thickness Uniformity ◽  
Homoepitaxial Growth ◽  
Major Parameter ◽  
Wafer Size

ABSTRACTHomoepitaxial growth on 4H-SiC Si-face substrates with sizes corresponding to 150 mm was carried out. The influence of growth conditions for uniformity and epitaxial defect density was investigated. A 150 mm size was realized by using two 76.2 mm wafers lined up in a radial direction. C/Si ratio is found to be a major parameter for controlling triangular defect density and the generation of step bunching. As a result, the surface morphology without bunched step structure and the triangular defect density with 0.5 cm−2 were obtained by decreasing C/Si ratio to 1.0 on the size corresponding to 150 mm. Under this condition, good carrier concentration and thickness uniformity of σ/mean =15.2 % and 1.7 % could be obtained.

Control of the Surface Morphology on Low Off Angled 4H-SiC Homoepitaxal Growth

2009 ◽  
Vol 615-617 ◽  
pp. 113-116 ◽  
Author(s):  
Kazutoshi Kojima ◽  
Hajime Okumura ◽  
Kazuo Arai
Keyword(s):  
Surface Morphology ◽  
Epitaxial Growth ◽  
Epitaxial Layer ◽  
Flow Rate ◽  
Growth Conditions ◽  
Layer Surface ◽  
Specular Surface ◽  
Homoepitaxial Growth ◽  
Angle Difference ◽  
The Face

We have carried out detailed investigations on the influence of the growth conditions and the wafer off angle on the surface morphology of low off angle homoepitaxial growth. We found triangular features to be also serious problems on a 4 degree off 4H-SiC Si-face epitaxial layer surface. The control of the C/Si ratio by controlling the SiH4 flow rate is effective in suppressing the triangular features on 4 degree off Si-face homoepitaxial layer. As regards epitaxial growth on a vicinal off-axis substrate, the small off angle difference of a tenth part of a degree has an influence on the surface morphology of the epitaxial layer. This tendency depends on the face polarity and a C-face can be obtained that has a specular surface with a lower vicinal off angle than a Si-face. By controlling this off angle, a specular surface morphology without a bunched step structure could be obtained on a vicinal off angle 4H-SiC Si-face.

Extensive 99% Killer Defect Free 4H-SiC Epitaxial Layer toward High Current Large Chip Devices

2019 ◽  
Vol 963 ◽  
pp. 105-108
Author(s):  
Keiji Wada ◽  
Takaya Miyase ◽  
Hironori Itoh ◽  
Tsutomu Hori ◽  
Hideyuki Doi ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Epitaxial Layer ◽  
Defect Density ◽  
Growth Conditions ◽  
High Current ◽  
Growth Processes ◽  
Thickness Uniformity

Epitaxial growth of 4H-SiC on 150 mm wafers using 3 x 150 mm multi-wafer CVD has been investigated to realize extremely low defect density on the epitaxial layer in order to achieve stable fabrication of high current devices with large die size. By optimizing the epitaxial growth conditions as well as the improved procedures for the inside the furnace to remain cleaned stably for cumulative growth processes, we have demonstrated an extensive 99% defect free epitaxial inlayer in a 5 mm x 5 mm block evaluation which is having excellent doping and thickness uniformity simultaneously.

4H-SiC Homoepitaxial Growth on Vicinal-Off Angled Si-Face Substrate

2010 ◽  
Vol 645-648 ◽  
pp. 99-102 ◽  
Author(s):  
Kazutoshi Kojima ◽  
Sachiko Ito ◽  
Junji Senzaki ◽  
Hajime Okumura
Keyword(s):  
Surface Morphology ◽  
Epitaxial Growth ◽  
Growth Temperature ◽  
Growth Conditions ◽  
Step Bunching ◽  
Homoepitaxial Growth ◽  
Blocking Voltage ◽  
Basal Plane Dislocation ◽  
Epilayer Surface

We have carried out detailed investigations of 4H-SiC homoepitaxial growth on vicinal off-angled Si-face substrates. We found that the surface morphology of the substrate just after in-situ H2 etching was also affected by the value of the vicinal-off angle. Growth conditions consisting of a low C/Si ratio and a low growth temperature were effective in suppressing macro step bunching at the grown epilayer surface. We also demonstrated epitaxial growth without step bunching on a 2-inch 4H-SiC Si-face substrate with a vicinal off angle of 0.79o. Ni Schottky barrier diodes fabricated on an as-grown epilayer had a blocking voltage above 1000V and a leakage current of less than 5x10-7A/cm2. We also investigated the propagation of basal plane dislocation from the vicinal off angled substrate into the epitaxial layer.

Investigation of 3C-SiC(111) Homoepitaxial Growth by CVD at High Temperature

2010 ◽  
Vol 645-648 ◽  
pp. 127-130 ◽  
Author(s):  
Nikoletta Jegenyes ◽  
Jean Lorenzzi ◽  
Véronique Soulière ◽  
Jacques Dazord ◽  
François Cauwet ◽  
...  
Keyword(s):  
High Temperature ◽  
Surface Morphology ◽  
Gas Phase ◽  
Chemical Vapour Deposition ◽  
Growth Temperature ◽  
Vapour Deposition ◽  
Defect Density ◽  
Chemical Vapour ◽  
Defect Size ◽  
Homoepitaxial Growth

Starting from 3C-SiC(111) layers grown by Vapour-Liquid-Solid mechanism, homoepitaxial growth by Chemical Vapour Deposition was carried out on top of these seeds. The effect of the growth temperature and of the C/Si ratio in the gas phase was investigated on the surface morphology, the roughness and the defect density. It was found that the initial highly step-bunched surface of the VLS seeds could be greatly smoothen using appropriate conditions. These conditions were also found to reduce significantly the defect size and/or density at the surface.

99.9% BPD Free 4H-SiC Epitaxial Layer with Precisely Controlled Doping upon 3 x 150 mm Hot-Wall CVD

2018 ◽  
Vol 924 ◽  
pp. 72-75 ◽  
Author(s):  
Keiji Wada ◽  
Takemi Terao ◽  
Hironori Itoh ◽  
Tsutomu Hori ◽  
Hideyuki Doi ◽  
...  
Keyword(s):  
Temperature Distribution ◽  
Numerical Simulations ◽  
Epitaxial Growth ◽  
Epitaxial Layer ◽  
Growth Conditions ◽  
Experimental Results ◽  
Thickness Uniformity ◽  
Free Region ◽  
Controlled Doping

Epitaxial growth of 4H-SiC on 150 mm wafers has been investigated using experimental results and numerical simulations toward the goal of BPDs reduction and doping uniformity control in the epitaxial layer. We have reported analyses of the temperature distribution dependence of the doping uniformity and BPDs propagations on the 3 x 150 mm multi-wafer CVD epitaxial growth. By optimizing epitaxial growth conditions, we have demonstrated an excellent doping and thickness uniformity and a 99.9% BPD free region, simultaneously.

Homo-Epitaxial Growth on 2° Off-Cut 4H-SiC(0001) Si-Face Substrates Using H2-SiH4-C3H8 CVD System

2014 ◽  
Vol 778-780 ◽  
pp. 214-217 ◽  
Author(s):  
Kentaro Tamura ◽  
Chiaki Kudou ◽  
Keiko Masumoto ◽  
Johji Nishio ◽  
Kazutoshi Kojima
Keyword(s):  
Confocal Microscopy ◽  
Epitaxial Growth ◽  
Carrier Concentration ◽  
Epitaxial Layer ◽  
Defect Density ◽  
Epitaxial Layers ◽  
Differential Interference Contrast ◽  
Step Bunching

We have grown epitaxial layers on 2° off-cut 4H-SiC(0001) Si-face substrates. The epitaxial layer surfaces on 2° off-cut substrates are more prone to generate step-bunching than on 4° off-cut substrates, which are observed by confocal microscopy with differential interference contrast. We have speculated that the step-bunching is generated at the beginning of an epitaxial growth. Triangular defect density of epitaxial layers on 2° off-cut substrates is as low as 0.7 cm–2 for the size corresponding to 150 mm. We have firstly reported distribution of 2° off-cut epitaxial layers for the 150-mm size using two 76.2-mm wafers: σ/mean = 3.3% for thickness, σ/mean = 7.3% for carrier concentration.

Investigation of Run-to-Run Fluctuation in Growth Conditions of Physical Vapor Transport Growth of 4H-SiC Crystals

2018 ◽  
Vol 924 ◽  
pp. 19-22
Author(s):  
Nana Matsumoto ◽  
Hiroaki Shinya ◽  
Koji Ashida ◽  
Tadaaki Kaneko ◽  
Noboru Ohtani ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Surface Properties ◽  
Growth Parameters ◽  
Growth Conditions ◽  
Source Material ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Major Parameter ◽  
Surface Morphologies

We investigated the run-to-run fluctuation in growth conditions of physical vapor transport growth of 4H-SiC boules through observations of surface morphology on the (000-1) facet of the boules. The boules, which were grown under the same macroscopic growth conditions, exhibited slightly different surface morphologies. This indicates that some microscopic growth parameters that influence the surface morphology fluctuate between growth runs. We have considered the C/Si ratio of the vapor sublimed from the source material as a major parameter and discussed the associated variations in the physical and surface properties of the grown crystals.

High Growth Rate with Reduced Surface Roughness during On-Axis Homoepitaxial Growth of 4H-SiC

2011 ◽  
Vol 679-680 ◽  
pp. 115-118 ◽  
Author(s):  
Jawad ul Hassan ◽  
Peder Bergman ◽  
Anne Henry ◽  
Erik Janzén
Keyword(s):  
Growth Rate ◽  
Surface Roughness ◽  
Surface Morphology ◽  
High Growth ◽  
Lower Surface ◽  
Growth Conditions ◽  
High Growth Rate ◽  
Homoepitaxial Growth ◽  
Order Of Magnitude ◽  
Reduced Surface

The effect of different C/Si ratio on the surface morphology has been studied to optimize the on-axis homoepitaxial growth conditions on 4H-SiC substrates to improve the surface roughness of epilayers. The overall surface roughness is found to decrease with decreasing C/Si ratio. An order of magnitude lower surface roughness has been observed using C/Si ratio = 0.8 without disturbing the polytype stability in the epilayer. A high growth rate of 10 µm/h was achieved without introducing 3C inclusions. The epilayers grown at higher growth rate with C/Si ratio = 1 also had improvements in the surface roughness. 100% 4H polytype was maintained in the epilayers grown with C/Si ratio in the range of 1.2 to 0.8 and with high growth rate of 10 µm/h.

Development of Homoepitaxial Growth Technique on 4H-SiC Vicinal Off Angled Substrate

2014 ◽  
Vol 778-780 ◽  
pp. 125-130 ◽  
Author(s):  
Kazutoshi Kojima ◽  
Keiko Masumoto ◽  
Sachiko Ito ◽  
Akiyo Nagata ◽  
Hajime Okumura
Keyword(s):  
Free Energy ◽  
Surface Morphology ◽  
Epitaxial Layer ◽  
Key Factors ◽  
High Quality ◽  
Energy Control ◽  
Growth Technique ◽  
Temperature Growth ◽  
Homoepitaxial Growth

We have investigated key factors for controlling the polytype and surface morphology of 4H-SiC homoepitaxial growth on less than 4ooff-axis substrates. In addition, we characterized the crystal quality and surface quality of the epitaxial layer of an entire 3-inch vicinal off angled substrate. The results suggested that the control of surface free energy, control of the vicinal off angle itself, and high temperature growth, is highly important in controlling the surface morphology and polytype stability of the epitaxial layer grown on a vicinal off angled substrate. We also obtained a high-quality epitaxial layer grown on a 3-inch vicinal off angle substrate, which was comparable to those on 4ooff-axis substrates.

Defect morphology in thick relaxed layers of InGaAs on GaAs

1990 ◽  
Vol 48 (4) ◽  
pp. 668-669
Author(s):  
R H Dixon ◽  
P Kidd ◽  
P J Goodhew
Keyword(s):  
Electron Microscopy ◽  
Surface Morphology ◽  
Growth Conditions ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
Strained Layers ◽  
Good Surface ◽  
Transmission Electron ◽  
Device Structures ◽  
Surface Morphologies

Thick relaxed InGaAs layers grown epitaxially on GaAs are potentially useful substrates for growing high indium percentage strained layers. It is important that these relaxed layers are defect free and have a good surface morphology for the subsequent growth of device structures.3μm relaxed layers of InxGa1-xAs were grown on semi - insulating GaAs substrates by Molecular Beam Epitaxy (MBE), where the indium composition ranged from x=0.1 to 1.0. The interface, bulk and surface of the layers have been examined in planar view and cross-section by Transmission Electron Microscopy (TEM). The surface morphologies have been characterised by Scanning Electron Microscopy (SEM), and the bulk lattice perfection of the layers assessed using Double Crystal X-ray Diffraction (DCXRD).The surface morphology has been found to correlate with the growth conditions, with the type of defects grown-in to the layer (e.g. stacking faults, microtwins), and with the nature and density of dislocations in the interface.

Sign in / Sign up

Export Citation Format

Share Document