Dislocation Mobilities in GaN from Molecular Dynamics Simulations
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ABSTRACTThe results of molecular dynamics (MD) simulations of dislocation glide in GaN using a Tersoff potential are presented. The simulation methodology involves applying a constant shear stress to a single crystal system containing an individual dislocation, with multiple slip systems considered. Upon reaching a steady state, the dislocation velocity as a function of applied stress and temperature are determined. Edge dislocations with a-type Burgers vectors in the basal, prismatic and pyramidal planes have been analyzed over the temperature range of 300-1300K. The results from simulations of c-type edge dislocations at 1300 K are also presented.
2019 ◽
Vol 16
(3)
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pp. 291-300
2016 ◽
Vol 18
(37)
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pp. 25806-25816
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2013 ◽
Vol 9
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pp. 118-134
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2021 ◽