Microstructure of Ca3Co4O9 Single Crystals and Thin Films

2005 ◽  
Vol 886 ◽  
Author(s):  
Yufeng Hu ◽  
Eli Sutter ◽  
Weidong Si ◽  
Qiang Li
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Single Crystal ◽  
Single Crystals ◽  
Single Crystal Sample ◽  
X Ray Diffraction ◽  
Crystal Sample ◽  
Lattice Constants ◽  
Glass Substrates ◽  
Transmission Electron

ABSTRACTWe present a comparative study of the microstructure of Ca3Co4O9 single crystals and c-axis oriented Ca3Co4O9 thin films grown on glass substrates. Though both crystals and films have similar values of Seekbeck coefficient and electric resistivity at room temperature, their microstructures are rather different. Extensive high resolution transmission electron microscopy (TEM) studies reveal that the films grown on glass substrates have abundant stacking faults, which is in contrast to the perfect crystalline structure found in the single crystal sample. The c-axis lattice constants derived from the x-ray diffraction (XRD) and TEM measurements for the single crystal sample and the thin film are virtually the same, suggesting that the thin film on the glass substrate was not strained.

Crystallographic and Magnetic Properties of CoCrPt Thin Films Investigated Using Single-Crystal Perpendicular Magnetic Thin Film Samples

2002 ◽  
Vol 721 ◽  
Author(s):  
Masaaki Futamoto ◽  
Kouta Terayama ◽  
Katsuaki Sato ◽  
Nobuyuki Inaba ◽  
Yoshiyuki Hirayama
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetic Properties ◽  
Single Crystal ◽  
Film Plane ◽  
Magnetic Thin Film ◽  
X Ray Diffraction ◽  
Easy Magnetization ◽  
Transmission Electron ◽  
Magnetization Axis

AbstractConditions to prepare good single-crystal CoCrPt magnetic thin film with the easy magnetization axis perpendicular to the film plane were investigated using oxide single-crystal substrates, Al2O3(0001), LaAlO3(0001), mica(0001), SrTiO3(111), and MgO(111). The best CoCrPt(0001) single-crystal thin film was obtained on an Al2O3(0001) substrate employing a non-magnetic CoCrRu underlayer. The crystallographic quality of single-crystal thin film was investigated using X-ray diffraction and high-resolution transmission electron microscopy. Some intrinsic magnetic properties (Hk, Ku) were determined for the single-crystal CoCrxPty thin films for a compositional range of x=17-20at% and y=0-17at%.

Palladium Nanowire Thin Films via Template Growth

2003 ◽  
Vol 775 ◽  
Author(s):  
Donghai Wang ◽  
David T. Johnson ◽  
Byron F. McCaughey ◽  
J. Eric Hampsey ◽  
Jibao He ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Conductive Substrate ◽  
Palladium Nanowires ◽  
Efficient Route ◽  
Silica Thin Film

AbstractPalladium nanowires have been electrodeposited into mesoporous silica thin film templates. Palladium continually grows and fills silica mesopores starting from a bottom conductive substrate, providing a ready and efficient route to fabricate a macroscopic palladium nanowire thin films for potentially use in fuel cells, electrodes, sensors, and other applications. X-ray diffraction (XRD) and transmission electron microscopy (TEM) indicate it is possible to create different nanowire morphology such as bundles and swirling mesostructure based on the template pore structure.

scholarly journals Optical and Electrical Properties of Thin Films of CuS Nanodisks Ensembles Annealed in a Vacuum and Their Photocatalytic Activity

2013 ◽  
Vol 2013 ◽  
pp. 1-9 ◽  
Author(s):  
J. Santos Cruz ◽  
S. A. Mayén Hernández ◽  
F. Paraguay Delgado ◽  
O. Zelaya Angel ◽  
R. Castanedo Pérez ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Hydrogen Peroxide ◽  
Photocatalytic Activity ◽  
Electrical Properties ◽  
Absolute Temperature ◽  
Glass Substrates ◽  
Transmission Electron ◽  
Different Temperatures ◽  
Blue Solution

Effects on the optical, electrical, and photocatalytic properties of undoped CuS thin films nanodisks vacuum annealed at different temperatures were investigated. The chemical bath prepared CuS thin films were obtained at 40°C on glass substrates. The grain size of13.5±3.5 nm was computed directly from high-resolution transmission electron microscopy (HRTEM) images. The electrical properties were measured by means of both Hall effect at room temperature and dark resistivity as a function of the absolute temperature 100–330 K. The activation energy values were calculated as 0.007, 0.013, and 0.013 eV for 100, 150, and 200°C, respectively. The energy band gap of the films varied in the range of 1.98 up to 2.34 eV. The photocatalytic activity of the CuS thin film was evaluated by employing the degradation of aqueous methylene blue solution in the presence of hydrogen peroxide. The CuS sample thin film annealed in vacuum at 150°C exhibited the highest photocatalytic activity in presence of hydrogen peroxide.

Thin Film Depositions of CdTe Semiconductors on Amorphous and Single Crystal Substrates and Comparisons of their Properties

2010 ◽  
Vol 638-642 ◽  
pp. 2909-2914 ◽  
Author(s):  
Yuichi Sato ◽  
Tatsushi Kodate ◽  
Manabu Arai
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Substrate Temperature ◽  
Single Crystal ◽  
Photoluminescence Properties ◽  
Glass Substrates ◽  
Indium Doping ◽  
Sapphire Single Crystal ◽  
Cdte Thin Films ◽  
The Difference

Thin films of CdTe semiconductors were prepared on sapphire single crystal and quartz glass substrates by a vacuum evaporation method. Crystallinity and photoluminescence properties of the obtained CdTe thin films on the substrates were semi-quantitatively compared concerning the difference of the substrate materials. Dependences of the properties on the substrate temperature in the preparations and indium doping to the thin films were also investigated.

Fine Tuning Magnetic Properties of FePt:C Thin Films by FePt UnderLayers

2013 ◽  
Vol 313-314 ◽  
pp. 254-257
Author(s):  
Ling Fang Jin ◽  
Hong Zhuang
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Magnetic Properties ◽  
Fine Tuning ◽  
Nanocomposite Films ◽  
Nanocomposite Thin Film ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron

Nonepitaxially grown FePt (x)/FePt:C thin films were synthesized, where FePt (x) (x=2, 5, 8, 11, 14 nm) layers were served as underlayers and FePt:C layer was nanocomposite with thickness of 5 nm. The effect of FePt underlayer on the ordering, orientation and magnetic properties of FePt:C thin films has been investigated by adjusting FePt underlayer thicknesses from 2 nm to 14 nm. X-ray diffraction (XRD), together with transmission electron microscopy (TEM) confirmed that the desired L10 phase was formed and films were (001) textured with FePt underlayer thickness decreased less 5 nm. For 5 nm FePt:C nanocomposite thin film with 2 nm FePt underlayer, the coercivity was 8.2 KOe and the correlation length of FePt:C nanocomposite film was 67 nm. These results reveal that the better orientation and magnetic properties for FePt:C nanocomposite films can be tuned by decreasing FePt underlayer thickness.

Lattice parameters and optical absorption of CuIn1-xGaxSe2 thin films

1999 ◽  
Vol 77 (7) ◽  
pp. 515-520
Author(s):  
AAI Al-Bassam
Keyword(s):  
Thin Film ◽  
Crystal Structure ◽  
Thin Films ◽  
Grain Size ◽  
Lattice Parameters ◽  
X Ray Diffraction ◽  
X Ray ◽  
Lattice Constants ◽  
Cubic Structure ◽  
Ga Content

Thin film polycrystalline solar cells based on CuIn1–xGaxSe2 have been fabricated and studied with x values from 0 to 1.0. The lattice parameters, grain size, and band gap were measured. Crystal structure and X-ray data of CuIn1–xGaxSe2 were determined using X-ray diffractometry. These materials had a cubic structure with x ≥ 0.5 and a tetragonal structure with x ≤ 0.5. The lattice constants vary linearly with composition. Grain size was measured using X-ray diffraction where the grain size increased linearly with Ga content. A grain size of 1.83-3.52 μm was observed with x ≤ 0.5, while it increased to 4.53 μm for x = 0.58.PACS No.: 70.73

Characterization of MnS Thin Films Deposited by Chemical Bath Deposition

2019 ◽  
Vol 969 ◽  
pp. 433-438 ◽  
Author(s):  
Dattatraya K. Sonavane ◽  
S.K. Jare ◽  
M.A. Shaikh ◽  
R.V. Kathare ◽  
R.N. Bulakhe
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Band Gap ◽  
Chemical Bath Deposition ◽  
Band Gap Energy ◽  
Sulfur Source ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Double Beam

Glass substrates are used to deposit thin films utilizing basic and value effective chemical bath deposition (CBD) technique. The films were prepared from the mixture as solutions of manganous acetate tetrahydrate [C4H6MnO44H2O] as a manganese source, thiourea [(H2 N) 2 CS] as a sulfur source and triethanolamine (TEA) [(HOC2H4)3N] as a complexing agent.In the present paper the deposition was successfully done at 60 °C temperature. The absorption properties and band gap energy were determined employing double beam spectrophotometer. The optical band gap value calculated from absorption spectra of MnS thin film is found to be about 3.1eV.The MnS thin film was structurally characterized by X-ray Diffraction (XRD). The MnS thin film was morphologically characterized by Scanning Electron Microscopy (SEM) and elemental analysis was performed using EDS to confirm the formation of MnS.

Investigations on Tin Selenide Thin Film Based Schottky Barrier Diodes by I-V-T Method

2013 ◽  
Vol 665 ◽  
pp. 297-301
Author(s):  
Kiran Kumar Patel ◽  
K.D. Patel ◽  
Mayur Patel ◽  
Keyur S. Hingarajiya ◽  
V.M. Pathak
Keyword(s):  
Thin Film ◽  
Schottky Barrier ◽  
X Rays ◽  
X Ray Diffraction ◽  
Tem Analysis ◽  
Glass Substrates ◽  
Tin Selenide ◽  
Transmission Electron ◽  
Evaporation Technique ◽  
Selenide Thin Film

Tin Selenide thin films have been deposited using thermal evaporation technique on chemically and ultrasonically cleaned glass substrates. The stoichiometry of deposited films has been studied using Energy Dispersive Analysis of X-rays (EDAX).The orthorhombic structure and polycrystalline nature of the films were also revealed by X-ray diffraction (XRD) and Transmission Electron Microscopy (TEM) analysis. The well characterized thin film of SnSe was then used to fabricate Ag/p-SnSe/In Schottky barrier diode. The I-V characteristics of prepared diodes have been investigated over the temperature range of 303 K to 393 K. The forward biased I-V characteristics of prepared structure has been analyzed using TE theory and different device parameters have been evaluated and discussed in present paper. The Richardson constant was also determined from the conventional Richardson plot and it is found close to the reported value.

Initial Evolution of Cobalt Silicides in The Cobalt/Amorphous-Silicon Thin Film System

1991 ◽  
Vol 230 ◽  
Author(s):  
Hideo Miura ◽  
En Ma ◽  
Carl V. Thompson
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Amorphous Silicon ◽  
Amorphous Layer ◽  
X Ray Diffraction ◽  
Silicon Thin Film ◽  
Scanning Calorimetry ◽  
Transmission Electron ◽  
Initial Evolution ◽  
Cobalt Silicides

AbstractThe initial phase formation sequence for reactions in cobalt/ amorphous-silicon multi-layer thin films has been investigated using a combination of differential scanning calorimetry, thin film X-ray diffraction, and transmission electron microscopy. Multilayer thin films with various overall atomic concentration ratios and various bilayer thicknesses were used in this study. It was found that crystalline CoSi is always the first phase to nucleate in the interdiffused amorphous layer which preexisted at the as-deposited coba It/amorphous-si licon interface. The CoSi nucleates at temperatures as low as about 530 K, but does not grow until the next phase, which is Co2 Si when excess Co is available, starts to nucleate and grow. The activation energy of the CoSi nucleation was found to be 1.-6±0.1 eV.

Electrical Resistivity Improvement by Precipitation and Strain in Al-Cu Thin Films

2010 ◽  
Vol 305-306 ◽  
pp. 33-37 ◽  
Author(s):  
S. Lallouche ◽  
M.Y. Debili
Keyword(s):  
Thin Films ◽  
Copper Content ◽  
Room Temperature ◽  
Structural Features ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Transmission Electron ◽  
Hall Method

This work deals with Al-Cu thin films, deposited onto glass substrates by RF (13.56MHz) magnetron sputtering, and annealed at 773K. The film thickness was approximately the same 3-4µm. They are characterized with respect to microstructure, grain size, microstrain, dislocation density and resistivity versus copper content. Al (Cu) deposits containing 1.8, 7.21, 86.17 and 92.5at%Cu have been investigated. The use of X-ray diffraction analysis and transmission electron microscopy lead to the characterization of different structural features of films deposited at room temperature (< 400K) and after annealing (773K). The resistivity of the films was measured using the four-point probe method. The microstrain profile obtained from XRD thanks to the Williamson-Hall method shows an increase with increasing copper content.

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