Initial Evolution of Cobalt Silicides in The Cobalt/Amorphous-Silicon Thin Film System

1991 ◽  
Vol 230 ◽  
Author(s):  
Hideo Miura ◽  
En Ma ◽  
Carl V. Thompson
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Amorphous Silicon ◽  
Amorphous Layer ◽  
X Ray Diffraction ◽  
Silicon Thin Film ◽  
Scanning Calorimetry ◽  
Transmission Electron ◽  
Initial Evolution ◽  
Cobalt Silicides

AbstractThe initial phase formation sequence for reactions in cobalt/ amorphous-silicon multi-layer thin films has been investigated using a combination of differential scanning calorimetry, thin film X-ray diffraction, and transmission electron microscopy. Multilayer thin films with various overall atomic concentration ratios and various bilayer thicknesses were used in this study. It was found that crystalline CoSi is always the first phase to nucleate in the interdiffused amorphous layer which preexisted at the as-deposited coba It/amorphous-si licon interface. The CoSi nucleates at temperatures as low as about 530 K, but does not grow until the next phase, which is Co2 Si when excess Co is available, starts to nucleate and grow. The activation energy of the CoSi nucleation was found to be 1.-6±0.1 eV.

Palladium Nanowire Thin Films via Template Growth

2003 ◽  
Vol 775 ◽  
Author(s):  
Donghai Wang ◽  
David T. Johnson ◽  
Byron F. McCaughey ◽  
J. Eric Hampsey ◽  
Jibao He ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Conductive Substrate ◽  
Palladium Nanowires ◽  
Efficient Route ◽  
Silica Thin Film

AbstractPalladium nanowires have been electrodeposited into mesoporous silica thin film templates. Palladium continually grows and fills silica mesopores starting from a bottom conductive substrate, providing a ready and efficient route to fabricate a macroscopic palladium nanowire thin films for potentially use in fuel cells, electrodes, sensors, and other applications. X-ray diffraction (XRD) and transmission electron microscopy (TEM) indicate it is possible to create different nanowire morphology such as bundles and swirling mesostructure based on the template pore structure.

Performance of Low Resistivity Electrode Prepared by Electroless Plated for Amorphous Silicon Thin-Film Transistors

2007 ◽  
Vol 561-565 ◽  
pp. 1165-1168 ◽  
Author(s):  
Chien Yie Tsay ◽  
Chung Kwei Lin ◽  
Hong Ming Lin ◽  
Shih Chieh Chang ◽  
Bor Chuan Chung
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Amorphous Silicon ◽  
Large Area ◽  
Silicon Thin Film ◽  
Adhesion Properties ◽  
Low Resistivity ◽  
N2 Atmosphere ◽  
Lift Off ◽  
Processing Steps

The TFTs array fabrication process for large-area TFT-LCD has been continuously developed for simplifying processing steps, improving performance and reducing cost in the process of mass production. In this study, the hydrogenated amorphous silicon (a-Si:H) TFTs with low resistivity electrodes , silver thin films, were prepared by using the selective deposition method that combined lift-off and electroless plated processes. This developed process can direct pattern the electrode of transistor devices without the etching process and provide ease processing steps. The as-deposited Ag films were annealed at 200 oC for 10 minutes under N2 atmosphere. The results shows that the adhesion properties can be enhanced and the resistivity has been improved from 6.0 μ,-cm, significantly decrease by 35%, of as-deposited Ag films by annealed. The thickness of Ag thin film is about 100 nm and the r. m. s roughness value is 1.54 nm. The a-Si:H TFT with Ag thin films as source and drain electrodes had a field effect mobility of 0.18 cm2/Vs, a threshold voltage of 2.65 V, and an on/off ratio of 3×104.

Fine Tuning Magnetic Properties of FePt:C Thin Films by FePt UnderLayers

2013 ◽  
Vol 313-314 ◽  
pp. 254-257
Author(s):  
Ling Fang Jin ◽  
Hong Zhuang
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Magnetic Properties ◽  
Fine Tuning ◽  
Nanocomposite Films ◽  
Nanocomposite Thin Film ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron

Nonepitaxially grown FePt (x)/FePt:C thin films were synthesized, where FePt (x) (x=2, 5, 8, 11, 14 nm) layers were served as underlayers and FePt:C layer was nanocomposite with thickness of 5 nm. The effect of FePt underlayer on the ordering, orientation and magnetic properties of FePt:C thin films has been investigated by adjusting FePt underlayer thicknesses from 2 nm to 14 nm. X-ray diffraction (XRD), together with transmission electron microscopy (TEM) confirmed that the desired L10 phase was formed and films were (001) textured with FePt underlayer thickness decreased less 5 nm. For 5 nm FePt:C nanocomposite thin film with 2 nm FePt underlayer, the coercivity was 8.2 KOe and the correlation length of FePt:C nanocomposite film was 67 nm. These results reveal that the better orientation and magnetic properties for FePt:C nanocomposite films can be tuned by decreasing FePt underlayer thickness.

Microstructure and Magnetic Properties of CoFeHfO Rich Nanocrystalline Thin Films Application for High Frequency

2007 ◽  
Vol 558-559 ◽  
pp. 975-978
Author(s):  
L.V. Tho ◽  
K.E. Lee ◽  
Cheol Gi Kim ◽  
Chong Oh Kim ◽  
W.S. Cho
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetic Properties ◽  
Rf Sputtering ◽  
Xrd Analysis ◽  
X Ray Diffraction ◽  
Soft Magnetic ◽  
Electrical And Magnetic Properties ◽  
Transmission Electron ◽  
Nanocrystalline Thin Films

Nanocrystalline CoFeHfO thin films have been fabricated by RF sputtering method. Co52Fe23Hf10O15 thin film is observed, exhibit good magnetic properties with magnetic coercivity (Hc) of 0.18 Oe; anisotropy fild (Hk) of 49 Oe; saturation magnetization (4лMs) of 21 kG, and electrical resistivity (ρ) of 300 01cm. The frequency response of permeability of the film is excellent. The effect of microstructure on the electrical and magnetic properties of thin film was studied using X-ray diffraction (XRD) analysis and conventional transmission electron microscopy (TEM). The results showed that excellent soft magnetic properties were associated with granular nannoscale grains of α-CoFe and α-Co(Fe) phases.

Crystallographic and Magnetic Properties of CoCrPt Thin Films Investigated Using Single-Crystal Perpendicular Magnetic Thin Film Samples

2002 ◽  
Vol 721 ◽  
Author(s):  
Masaaki Futamoto ◽  
Kouta Terayama ◽  
Katsuaki Sato ◽  
Nobuyuki Inaba ◽  
Yoshiyuki Hirayama
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetic Properties ◽  
Single Crystal ◽  
Film Plane ◽  
Magnetic Thin Film ◽  
X Ray Diffraction ◽  
Easy Magnetization ◽  
Transmission Electron ◽  
Magnetization Axis

AbstractConditions to prepare good single-crystal CoCrPt magnetic thin film with the easy magnetization axis perpendicular to the film plane were investigated using oxide single-crystal substrates, Al2O3(0001), LaAlO3(0001), mica(0001), SrTiO3(111), and MgO(111). The best CoCrPt(0001) single-crystal thin film was obtained on an Al2O3(0001) substrate employing a non-magnetic CoCrRu underlayer. The crystallographic quality of single-crystal thin film was investigated using X-ray diffraction and high-resolution transmission electron microscopy. Some intrinsic magnetic properties (Hk, Ku) were determined for the single-crystal CoCrxPty thin films for a compositional range of x=17-20at% and y=0-17at%.

Interfacial Reaction in Aluminum/Carbon Multilayer Thin Films

1997 ◽  
Vol 481 ◽  
Author(s):  
K. Landry ◽  
H. Sieber ◽  
M. Sui ◽  
J. H. Perepezko
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Second Step ◽  
Multilayer Thin Films ◽  
X Ray Diffraction ◽  
Scanning Calorimetry ◽  
Selected Area Electron Diffraction ◽  
Transmission Electron ◽  
Modulation Wavelength

ABSTRACTThe reaction at the interface between Al and amorphous C in Al/C multilayer thin films with modulation wavelengths of about 25nm and 125nm has been investigated by differential scanning calorimetry, X-ray diffraction, transmission electron microscopy/selected area electron diffraction and high resolution transmission electron microscopy. The reaction was found to take place in two steps. The first step onsets at about 300°C, and was identified as the diffusion of C into Al. The second step starts above 400°C, at a temperature strongly dependent on the modulation wavelength of the film, and is the formation of A14C3. The carbide has been observed to nucleate and grow inside the Al layers. The multilayer structure is preserved in the samples up to at least 550°C, and Al grains start to grow at or below 300°C.

Structural Transitions in Titanium/Amorphous-Silicon Multilayers

1989 ◽  
Vol 163 ◽  
Author(s):  
E. Ma ◽  
L.A. Clevenger ◽  
C.V. Thompson ◽  
R.R. DeAvillez ◽  
K.N. Tu
Keyword(s):  
Thin Films ◽  
Exothermic Reaction ◽  
Heat Of Formation ◽  
Structural Transitions ◽  
X Ray Diffraction ◽  
Scanning Calorimetry ◽  
Calorimetric Analysis ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron

We report a quantitative investigation of silicidation in Ti/amorphous-Si thin-films using Differential Scanning Calorimetry (DSC), thin-film X-ray diffraction and Cross-sectional Transmission Electron Microscopy (XTEM). Multilayered thin films were used to facilitate calorimetric observation of the heat released or absorbed at many reacting interfaces. It is shown that calorimetric analysis, combined with structural analysis using X-ray diffraction and XTEM, is effective in providing both kinetic and thermodynamic information about interdiffusion reactions in thin films. The present paper describes experimental results for multilayers with an atomic concentration ratio of 1 Ti to 2 Si and modulation periods ranging from 10 to 60 nm. A thin amorphous titanium suicide layer was found to exist between the as-deposited Ti and a-Si layers. Heating the multilayer film caused the amorphous Ti-silicide to grow over a broad temperature range by an exothermic reaction. An endothermic relaxation occurs during the late stage of amorphous suicide growth. Heating to temperatures over 800K causes C49-TiSi2 to form at the a-si1icide/a-Si interface. Temperatures at which all the above structural transitions occur vary with modulation period. Analysis of the DSC data indicates an activation energy of 3.1 eV for the formation of C49-TiSio, which is attributed to both the nucleation and the early growth of the suicide. The heat of formation for C49-TiSi2 from a reaction of a-silicide and a-Si was found to be -30±5KJ/mol. Nucleation appears to be the controlling step in C49-TiSi2 formation.

Effects of Power Density and Thickness On Aluminum-Induced Crystallization of PECVD Amorphous Silicon

2007 ◽  
Vol 989 ◽  
Author(s):  
Kendrick S Hsu ◽  
Jeremy Ou-Yang ◽  
Li P. Ren ◽  
Grant Z. Pan
Keyword(s):  
Thin Films ◽  
Amorphous Silicon ◽  
Power Density ◽  
Reaction Temperature ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Transmission Electron ◽  
Temperature Scanning ◽  
Induced Crystallization ◽  
Aluminum Induced Crystallization

AbstractThe effect of power density and thickness on aluminum-induced crystallization (AIC) of amorphous silicon (a-Si) formed with plasma enhanced chemical vapor deposition (PECVD) was studied by using N2-protected conventional furnace reaction and optical microscopy. With the deposition power density ranging from 0.05 to 1.00 W/cm2 and the thickness from 500 to 5000Å, it was found that a low power density as well as a large a-Si thickness could result in a decrease of activation energy and therefore a significant reduction of the AIC reaction temperature. Scanning and transmission electron microscopy and X-ray diffraction were used to check the crystallinity and quality of the AIC thin films. High quality polysilicon thin films were achieved at an AIC reaction temperature as low as 120°C.

scholarly journals Optical and Structural Investigation of CdSe Quantum Dots Dispersed in PVA Matrix and Photovoltaic Applications

2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
Pallabi Phukan ◽  
Dulen Saikia
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Quantum Dots ◽  
Hexagonal Wurtzite Structure ◽  
Xrd Analysis ◽  
Cdse Quantum Dots ◽  
X Ray Diffraction ◽  
Morphological Studies ◽  
Transmission Electron ◽  
Particle Size Determination

CdSe quantum dots (QDs) dispersed in polyvinyl alcohol (PVA) matrix with their sizes within the quantum dot regime have been synthesized via a simple heat induced thermolysis technique. The effect of the concentrations of the cadmium source on the optical properties of CdSe/PVA thin films was investigated through UV-Vis absorption spectroscopy. The structural analysis and particle size determination as well as morphological studies of the CdSe/PVA nanocomposite thin films were done with the help of X-ray diffraction (XRD) and transmission electron microscopy (TEM). The XRD analysis reveals that CdSe/PVA nanocomposite thin film has a hexagonal (wurtzite) structure. A prototype thin film solar cell of CdSe/CdTe has been synthesized and its photovoltaic parameters were measured.

Preparation and Microstructural Characterization of Ferroelectric Thin Film PbTiO3 on Si, MgO, and Sapphire Deposited by DC Reactive Multitarget Co-Sputtering.

1991 ◽  
Vol 243 ◽  
Author(s):  
K.Y. Kim ◽  
H.I. Hwang ◽  
J.Y. Lee ◽  
W.K. Choo
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Substrate Temperature ◽  
Ferroelectric Thin Film ◽  
Microstructural Characterization ◽  
X Ray Diffraction ◽  
Deposition Parameters ◽  
Transmission Electron ◽  
Composition And Structure ◽  
Plane View

AbstractPbTiO3 thin films on Si (100) plane were prepared by the DC reactive multitarget cosputtering technique. The film composition and structure were examined as a function of deposition parameters. The crystal structure and microstructure of PbTiO3 thin film deposited on Si at low substrate temperature of 200°C were examined as a fuction of post-annealing temperature by X-ray diffraction and transmission electron microscopy.The ferroelectric domain configurations were analyzed by plane-view TEM. The preferred orientation of PbTiO3 thin films deposited on MgO (100) and sapphire (1102) at high substrate temperature of 520°C were also examined.

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