Thermoelectric Properties of Tl2Te-Sb2Te3 Pseudo-Binary System

2005 ◽  
Vol 886 ◽  
Author(s):  
Ken Kurisaki ◽  
Keita Goto ◽  
Atsuko Kosuga ◽  
Hiroaki Muta ◽  
Shinsuke Yamanaka
Keyword(s):  
Thermal Conductivity ◽  
Binary System ◽  
Thermoelectric Properties ◽  
Room Temperature ◽  
State Of The Art ◽  
Electrical Performance ◽  
Low Thermal Conductivity ◽  
Maximum Value ◽  
P Type ◽  
Type Conduction

ABSTRACTPolycrystalline-sintered samples of thallium based substances, (Tl2Te)100−x(Sb2Te3)x (x= 0, 1, 5, 10), were prepared by melting Tl2Te and Sb2Te3 ingots followed by annealing in sealed quartz ampoules. The thermoelectric properties were measured from room temperature to around 600 K. The values of the Seebeck coefficient of all samples are positive, indicating a p-type conduction characteristic. The maximum value of the power factor is 6.53×10−4 Wm−1K−2 at 591 K obtained for x= 10 (Tl9SbTe6), which is about one order lower than those of state-of-the-art thermoelectric materials. All samples indicate an extremely low thermal conductivity, for example that of Tl2Te is approximately 0.35 Wm−1K−1 from room temperature to around 600 K. Although the electrical performance of the samples is not so good, the ZT value is relatively high due to the extremely low thermal conductivity. The maximum ZT value is 0.42 at 591 K obtained for Tl9SbTe6.

Extremely Low Thermal Conductivity Substances as Novel Thermoelectric Materials

2005 ◽  
Vol 886 ◽  
Author(s):  
Shinsuke Yamanaka ◽  
Ken Kurosaki ◽  
Atsuko Kosuga ◽  
Keita Goto ◽  
Hiroaki Muta
Keyword(s):  
Thermal Conductivity ◽  
Thermoelectric Properties ◽  
Thermoelectric Materials ◽  
Figure Of Merit ◽  
Room Temperature ◽  
State Of The Art ◽  
Thermoelectric Figure ◽  
Low Thermal Conductivity ◽  
Thallium Compounds ◽  
Thallium Tellurides

ABSTRACTWe have prepared polycrystalline bulk samples of various thallium compounds and measured their thermoelectric properties. The most remarkable point of the thermoelectric properties of the thallium compounds is the extremely low thermal conductivity. The state-of-the-art thermoelectric materials such as Bi2Te3 and TAGS materials indicate relatively low the thermal conductivity, around 1.5 W/m/K. However, the thermal conductivity of the thallium compounds is below 0.5 W/m/K; especially that of silver thallium tellurides is around 0.25 W/m/K at room temperature. This extremely low thermal conductivity leads a great advantage for an enhancement of the thermoelectric performance. In this paper, we report on the properties of some thallium compounds selected for study as novel thermoelectric materials. One of these compounds seems to have a thermoelectric figure of merit comparable to those of state-of-the-art materials.

Thermoelectric Properties of Bi2Te3-ySey Bulk Materials Synthesized by Melting-Grinding Process

2018 ◽  
Vol 773 ◽  
pp. 145-151
Author(s):  
Min Soo Park ◽  
Gook Hyun Ha ◽  
Hye Young Koo ◽  
Yong Ho Park
Keyword(s):  
Thermal Conductivity ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Thermal Characteristics ◽  
Grinding Process ◽  
Alloy Scattering ◽  
Temperature Range ◽  
P Type ◽  
Optimal Effect

The Bi–Te thermoelectric system shows an excellent figure of merit (ZT) near room temperature. Research on increasing the ZT value for n‑type Bi–Te is imperative because the thermoelectric properties of this compound are inferior to those of the p-type material. For this purpose, n-type Bi2Te3-ySey powders with various amounts of Se dopant (0.3 ≤ y ≤ 0.6) were synthesized by a vacuum melting-grinding process to improve the physical properties. The ZT value of the sintered bodies was investigated in the temperature range of 298–423 K with regard to the electrical and thermal characteristics. As the Se content increased, the electrical conductivity decreased owing to a reduction in the carrier concentration, which improved the overall value of ZT. The thermal conductivity clearly decreased as the Se content increased in the temperature range of 298–373 K due to increased alloy scattering, as well as a reduction in the lattice thermal conductivity caused by crystal grain boundary scattering. At room temperature, Bi2Te2.7Se0.3 (y = 0.3) exhibited the highest ZT of 0.85. At increased temperatures, the ZT value was highest for Bi2Te2.55Se0.45 (y = 0.45), indicating that the optimal effect of the Se dopants varies depending on the temperature range.

Thermoelectric properties of the Al-TM-Si (TM = Mn, Re) 1/1-cubic approximant

2003 ◽  
Vol 805 ◽  
Author(s):  
Tsunehiro Takeuchi ◽  
Toshio Otagiri ◽  
Hiroki Sakagami ◽  
Uichiro Mizutani
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
Thermoelectric Power ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Low Thermal Conductivity ◽  
Dimensionless Figure Of Merit

ABSTRACTThe electrical resistivity, thermoelectric power, and thermal conductivity were investigated for the Al71.6-xMn 17.4Six and Al71.6-xRe 17.4Six (7 ≤ x ≤ 12) 1/1-cubic approximants. A large thermoelectric power ranging from -40 to 90 μV/K and a low thermal conductivity less than 3 W/K·cm were observed at room temperatures. The electrical resistivity at room temperature for these approximants was kept below 4,000 μΩcm, that is much smaller than that in the corresponding quasicrystals. As a result of the large thermoelectric power, the low thermal conductivity, and the low electrical resistivity, large dimensionless figure of merit ZT = 0.10 (n-type) and 0.07 (p-type) were achieved for the Al71.6Re17.4Si11 and Al71.6Mn17.4Si11 at room temperature, respectively.

Thermoelectric Properties of Ge-doped Cu3SbSe4

2011 ◽  
Vol 1314 ◽  
Author(s):  
Eric J. Skoug ◽  
Jeffrey D. Cain ◽  
Donald T. Morelli
Keyword(s):  
Thermal Conductivity ◽  
Room Temperature ◽  
State Of The Art ◽  
Unit Cell ◽  
Large Hole ◽  
Hole Effective Mass ◽  
Large Unit ◽  
Ternary Semiconductor ◽  
Large Unit Cell ◽  
P Type

ABSTRACTTernary variations of the II-VI zincblende semiconductors have received little attention for thermoelectric applications. Here we present the first systematic doping study on Cu3SbSe4, a zincblende-like ternary semiconductor with a unit cell four times larger than the parent II-VI compounds. The large unit cell of Cu3SbSe4 results in a low room temperature thermal conductivity (~3.0 W/m*K) and its large hole effective mass produces a Seebeck coefficient approaching 500 μV/K in the undoped compound. Our results show that Ge is an effective p-type dopant in Cu3SbSe4, and the power factor reaches nearly 16 μW/cm*K2 at 630K when 3% Ge is added, rivaling that of state-of-the-art thermoelectric materials at this temperature.

scholarly journals Theoretical Study on Thermoelectric Properties and Doping Regulation of Mg3X2 (X = As, Sb, Bi)

Metals ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 971
Author(s):  
Xiaofang Wang ◽  
Yong Lu ◽  
Ziyu Hu ◽  
Xiaohong Shao
Keyword(s):  
Thermal Conductivity ◽  
Thermoelectric Properties ◽  
Room Temperature ◽  
Lattice Thermal Conductivity ◽  
Theoretical Study ◽  
Phonon Dispersion ◽  
First Principle ◽  
Combined Method ◽  
Figures Of Merit ◽  
P Type

For searching both high-performances and better fits for near-room temperature thermoelectric materials, we here carried out a theoretical study on thermoelectric properties and doping regulation of Mg3X2 (X = As, Sb, Bi) by the combined method of first principle calculations and semi-classical Boltzmann theory. The thermoelectric properties of n-type Mg3As2, Mg3Sb2, and Mg3Bi2 were studied, and it was found that the dimensionless figures of merit, zT, are 2.58, 1.38, 0.34, and the p-type ones are 1.39, 0.64, 0.32, respectively. Furthermore, we calculated the lattice thermal conductivity of doped structures and screened out the structures with a relatively low formation energy to study the phonon dispersion and thermal conductivity in Mg3X2 (X = As, Sb, Bi). Finally, high thermoelectric zT and ultralow thermal conductivity of these doped structures was discussed.

scholarly journals Thermal conductivity and thermoelectric properties in 3D macroscopic pure carbon nanotube materials

2021 ◽  
Vol 10 (1) ◽  
pp. 178-186
Author(s):  
Xueming Yang ◽  
Jixiang Cui ◽  
Ke Xue ◽  
Yao Fu ◽  
Hanling Li ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Carbon Nanotube ◽  
Thermoelectric Properties ◽  
Room Temperature ◽  
High Porosity ◽  
Single Walled Carbon Nanotube ◽  
Low Thermal Conductivity ◽  
Multi Walled Carbon Nanotube ◽  
Interconnected Structure ◽  
Sintered Carbon

Abstract Sintered carbon nanotube (CNT) blocks and porous CNT sponges were prepared, and their thermoelectric properties were measured. The maximum dimensionless thermoelectric figure-of-merit, ZT, at room temperature of the sintered single-walled carbon nanotube (SWCNT) block is 9.34 × 10−5, which is twice higher than that of the sintered multi-walled carbon nanotube (MWCNT) block in this work and also higher than that of other sintered MWCNT blocks reported previously. In addition, the porous MWCNT sponge showed an ultra-low thermal conductivity of 0.021 W/(m K) and significantly enhanced ZT value of 5.72 × 10−4 at room temperature and 1 atm. This ZT value is higher than that of other 3D macroscopic pure CNT materials reported. The pronounced enhancement of the ZT in the porous MWCNT sponge is attributed to the ultra-low density, ultra-high porosity, and interconnected structure of the material, which lead to a fairly low thermal conductivity and better Seebeck coefficient. The finding of this work provides an understanding for exploring potential enhancement mechanisms and improving the thermoelectric properties of CNT-based thermoelectric composites.

scholarly journals Effects of Ga substitution on electronic and thermoelectric properties of gapless semiconductor V3Al

RSC Advances ◽  
2019 ◽  
Vol 9 (7) ◽  
pp. 3847-3855 ◽  
Author(s):  
Xiaorui Chen ◽  
Yuhong Huang ◽  
Jing Liu ◽  
Hongkuan Yuan ◽  
Hong Chen
Keyword(s):  
Thermal Conductivity ◽  
Thermoelectric Properties ◽  
Room Temperature ◽  
Thermoelectric Efficiency ◽  
Type V ◽  
P Type ◽  
Ga Substitution

Reduced thermal conductivity and enhanced thermoelectric efficiency was demonstrated by Ga substitution for Al at room temperature in p-type V3Al1−xGax.

Thermoelectric Properties of the Nanostructured NaPb18-xSnxMTe20 (M=Sb, Bi) Materials

2007 ◽  
Vol 1044 ◽  
Author(s):  
Aurelie Gueguen ◽  
Pierre Ferdinand Poudeu Poudeu ◽  
Robert Pcionek ◽  
Huijun Kong ◽  
Ctirad Uher ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Thermoelectric Properties ◽  
Room Temperature ◽  
Lattice Thermal Conductivity ◽  
Measured Temperature ◽  
Measured Temperature Range ◽  
Temperature Range ◽  
Properties Of Materials ◽  
P Type

AbstractThe thermoelectric properties of materials with compositions NaPb18-xSnxMTe20 (M=Sb, Bi, x=0, 3, 5, 9, 13, 16 and 18) were investigated in the temperature range 300-670K. All compositions exhibited p-type behavior over the measured temperature range. Electronic properties and transport were tuned through the manipulation of the Pb/Sn ratio. Increasing the Sn fraction results in an increase in electrical conductivity and a decrease in thermopower. The compositions NaPb13Sn5SbTe20 and NaPb9Sn9SbTe20 show a lattice thermal conductivity of ∼1 W/m/K at room temperature.

Effects of the Addition of Rhenium on the Thermoelectric Properties of the AlPdMn Quasicrystalline System

2000 ◽  
Vol 626 ◽  
Author(s):  
A. L. Pope ◽  
R. Gagnon ◽  
R. Schneidmiller ◽  
P. N. Alboni ◽  
R. T. Littleton ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Transport Property ◽  
Periodic Structure ◽  
Thermoelectric Properties ◽  
Electrical Transport ◽  
Room Temperature ◽  
Phonon Scattering ◽  
X Ray ◽  
Low Thermal Conductivity

ABSTRACTPartially due to their lack of periodic structure, quasicrystals have inherently low thermal conductivity on the order of 1 - 3 W/m-K. AlPdMn quasicrystals exhibit favorable room temperature values of electrical conductivity, 500–800 (Ω-cm)-1, and thermopower, 80 μV/K, with respect to thermoelectric applications. In an effort to further increase the thermopower and hopefully minimize the thermal conductivity via phonon scattering, quartenary Al71Pd21Mn8-XReX quasicrystals were grown. X-ray data confirms that the addition of a fourth element does not alter the quasiperiodicity of the sample. Al71Pd21Mn8-XReX quasicrystals of varying Re concentration were synthesized where x had values of 0, 0.08, 0.25, 0.4, 0.8, 2, 5, 6, and 8. Both thermal and electrical transport property measurements have been performed and are reported.

Sign in / Sign up

Export Citation Format

Share Document