Electrical Characteristics of BaxSr1-xTiO3(BST) Capacitors Implemented with Ti-Al Electrodes

2006 ◽  
Vol 928 ◽  
Author(s):  
Thottam S Kalkur ◽  
Jeff Whitescarver ◽  
Nick Cramer
Keyword(s):  
Dielectric Constant ◽  
Substrate Temperature ◽  
Diffraction Analysis ◽  
Annealing Temperature ◽  
Electrical Characteristics ◽  
X Ray Diffraction ◽  
X Ray ◽  
Decoupling Capacitor ◽  
Electrical Characterizations ◽  
Deposited Film

AbstractTi-Al was used as the electrode for RF magnetron sputtered BST film at a substrate temperature of 450°C for decoupling capacitor applications. X-ray diffraction analysis shows that the deposited film BST film is amorphous. Electrical characterizations of the devices performed by capacitance versus voltage measurements show a dielectric constant of about 55. With increase in annealing temperature above 450°C, the capacitance was found to decrease significantly.

Mo/Cr Metallization for Silicon Device Interconnection

1986 ◽  
Vol 71 ◽  
Author(s):  
M. J. Kim ◽  
R. A. Saia
Keyword(s):  
Annealing Temperature ◽  
Vlsi Circuits ◽  
Electrical Characteristics ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
Thermal Reliability ◽  
X Ray ◽  
Layer Contact ◽  
Silicon Device ◽  
Dry Etch

AbstractA molybdenum and chromium double layer contact has been developed for the first level metallization of VLSI circuits. An 800Å layer of chromium deposited under a thick molybdenum conductor provides good ohmic contact to p+ and n+ silicon and also promotes metal adhesion to the substrate. The molybdenum has good step coverage and acceptable current carrying capacity when its thickness exceeds 5000Å. Both metals are sequentially sputtered in one pumpdown and patterned with a single RIE step using CCI4 + O2. One pm diameter contacts and 1.5µm wide lines are formed in VLSI geometries using all dry etch processes. Electrical characteristics and thermal reliability were evaluated as a function of annealing temperature. Contact resistance and shallow device junctions are stable up to 500°C for p+/n diodes and up to 450°C for n+/p diodes. The sheet resistance of the film in contact with silicon rapidly increases at 525°C as silicon outdiffuses to form (Mox Crr−x)Si2 The mechanism and cause of the high temperature degradation was studied by mean of SIMS, x-ray diffraction analysis, SEM and electrical measurements.

Electrical Characteristics of ZnTe Thermoelectric Thin Films

2014 ◽  
Vol 535 ◽  
pp. 688-691 ◽  
Author(s):  
Wen Shiush Chen ◽  
Cheng Hsing Hsu ◽  
Wen Hua Kao ◽  
Yi Ting Yu ◽  
Pai Chuan Yang ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Annealing Temperature ◽  
Thermoelectric Device ◽  
Electrical Characteristics ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
X Ray ◽  
Device Applications ◽  
Thermoelectric Thin Films ◽  
Thermal Coating

Thermal coating growth of ZnTe thermoelectric films were deposited on n-type Si substrate is studied. Structural analysis through x-ray diffraction (XRD) and scanning electron microscopy (SEM) were sensitive to the RTA treatment. The electrical properties and microstructure of these films were investigated with special emphasis on the effects of various annealing temperatures from 600°C to 800°C by RTA technique. The highest carrier concentration, lowest resistivity and mobility at an annealing temperature of 700°C are 3.5×1015cm-3, 0.25 Ω-cm, and 49 cm2V-1S-1. The resultant electrical properties have made ZnTe films as very interesting materials for thermoelectric device applications.

scholarly journals Влияние термообработки на свойства композитных кремний-углеродных анодов для литий-ионных аккумуляторов

2020 ◽  
Vol 46 (3) ◽  
pp. 14
Author(s):  
Е.В. Астрова ◽  
А.В. Парфеньева ◽  
А.М. Румянцев ◽  
В.П. Улин ◽  
М.В. Байдакова ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Silicon Carbide ◽  
Diffraction Analysis ◽  
Annealing Temperature ◽  
Argon Atmosphere ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Lithium Alloys

The effect of annealing temperature in argon atmosphere on the ability of Si-C nanocomposites to reversibly insert lithium was investigated. It was found that the higher the annealing temperature during the formation of the composite, the lower is the capacitance of the electrode made from it. X-ray diffraction analysis and transmission electron microscopy reveal that the reason of the capacitance decrease is formation at T  1100°C of silicon carbide of cubic modification -SiC, inactive with respect to the formation of lithium alloys or intercalates.

Metallurgical and Electrical Characteristics of MoAlx Schottky Contacts to n-GaAs

1992 ◽  
Vol 260 ◽  
Author(s):  
T. S. Huang ◽  
J. G. Peng ◽  
C. C. Lin
Keyword(s):  
Thermal Processing ◽  
Annealing Temperature ◽  
Schottky Diodes ◽  
Schottky Contacts ◽  
Electrical Characteristics ◽  
Interfacial Stability ◽  
X Ray Diffraction ◽  
X Ray ◽  
Barrier Heights ◽  
Current Voltage

ABSTRACTThe interfacial stability, surface morphology and electrical characteristics of MoAlx contacts to n-GaAs have been investigated by using x-ray diffraction, scanning electron microscopy, sheet resistance and current-voltage measurements. The compositions of rf-cosputtered MoAlx films were x = 0.35, 2.7, and 7.0, respectively. The contacts were annealed by rapid thermal processing in the temperature range 500–1000 °C for 20 s. The interfaces of MoAl0.35/GaAs and MoAl2,7/GaAs were stable up to 900 °C, while the interfaces of MoAl7.0/GaAs were less stable and reactions occurred above 800 °C. The variations of sheet resistances and the barrier heights of the Schottky diodes as a function of annealing temperatures can be well correlated to the interfacial stability. The MoAl2.7/n-GaAs diodes exhibited the best stability and were characterized by the highest barrier height (0.98 V) and nearly unit ideality factor (1.11) after annealing at 900 °C. For all thermally stable MoAlx/n-GaAs Schottky diodes, the barrier heights increased with annealing temperature.

Effect of Zn on Dielectric Properties of Co-ZnFe2O4 Magnetic Nanoparticles

2020 ◽  
Vol 840 ◽  
pp. 448-453 ◽  
Author(s):  
Masni Agustina Lumbantoruan ◽  
Edi Suharyadi
Keyword(s):  
Dielectric Constant ◽  
Magnetic Nanoparticles ◽  
Dielectric Properties ◽  
Diffraction Analysis ◽  
Spinel Structure ◽  
Cobalt Ferrite ◽  
Zinc Content ◽  
X Ray Diffraction ◽  
X Ray ◽  
Dielectric Constant Decrease

Dielectric properties of Zn substituted cobalt ferrite (Co1-xZnxFe2O4) magnetic nanoparticles with various Zn concentrations (x = 0.2-0.8) have been successfully investigated. The structure of the prepared samples Co1-xZnxFe2O4 confirmed to be cubic spinel structure using X-ray diffraction analysis. The crystallite size of the sample was found to decrease with the increase of zinc content from 11.6 nm to 9.8 nm, while the lattice parameters found to increase with the increase of zinc from 8.18 to 8.25 Å. For Zinc x = 0.6 at frequency 5 kHz have the highest real dielectric constant (ɛ') was 678.8 and imaginary dielectric constant (ɛ'') was 833.3. The maximum impedance found at zinc x = 0.3 was 138.5. The dielectric constant decrease rapidly with increasing the frequency and then reaches the constant value where the frequency was used from 5-120 kHz.

InSe Nanothin Film with Ar-Gas Low Vacuum Pressure

2014 ◽  
Vol 606 ◽  
pp. 15-18
Author(s):  
Falah I. Mustafa ◽  
Mooroj Ali
Keyword(s):  
Thin Films ◽  
Diffraction Analysis ◽  
Room Temperature ◽  
Energy Gap ◽  
X Ray Diffraction ◽  
Argon Gas ◽  
X Ray ◽  
Glass Substrates ◽  
Deposited Film ◽  
Deposited Films

InxSe1-x(x = 0.4, 0.5, 0.6) thin films are deposited at room temperature on glass substrates with thickness ~500nm by thermal evaporation technique. The X-Ray diffraction analysis showed that both the as-deposited films In2Se3and InSe (x= 0.4 and 0.5) are amorphous in nature while the as-deposited film In3Se2is polycrystalline and the values of energy gap are Eg=1.44eV for In2Se3, Eg=1.16eV for InSe and Eg=0.78eV for In3Se2. The same technique used with insert Argon gas at pressure 0.1 mbar where InxSe1-x(x = 0.4, 0.5, 0.6) thin films are deposited at room temperature on glass substrates with thickness ~100nm. The X-Ray diffraction analysis showed that the as-deposited films In2Se3are amorphous in nature while the as-deposited film InSe and In3Se2are Nanocrystalline with grain size 33nm and 55nm respectively and the values of energy gap are Eg=1.55eV for InSe and Eg=1.28eV for In3Se2. The energy gap of InSe thin films increase with Argon gas assist and phases changes from amorphous and polycrystalline to nanostructure material by thermal vacuum deposition technique.

Effects of La-Dopant on Phase, Microstructure and Dielectric Properties of Bi4Ti3O12 Ceramics

2010 ◽  
Vol 93-94 ◽  
pp. 251-254 ◽  
Author(s):  
Pasinee Siriprapa ◽  
Anucha Watcharapasorn ◽  
Sukanda Jiansirisomboon
Keyword(s):  
Dielectric Constant ◽  
Grain Size ◽  
Dielectric Properties ◽  
Solid State ◽  
Diffraction Analysis ◽  
Solid State Reaction ◽  
Preferred Orientation ◽  
X Ray Diffraction ◽  
Conventional Solid State Reaction ◽  
X Ray

Bi4-xLaxTi3O12 (where x = 0, 0.25, 0.50, 0.75 and 1) powders and ceramics were prepared using conventional solid state reaction and sintering procedures. The calcination was carried out at 750 °C for 4 h and sintering was done at 1150 °C for 4 h. The density of all ceramics was found to be comparable regardless of La concentration. X-ray diffraction analysis showed that preferred orientation of ceramic grains was reduced with addition of La ions. This reduced preferred orientation was accompanied by a decrease in grain size. The temperature dependence of dielectric constant showed a decrease in Tc with increasing La concentration.

Electrical Characteristics of Ti/4H-SiC Slicidation Schottky Barrier Diode

2008 ◽  
Vol 600-603 ◽  
pp. 643-646 ◽  
Author(s):  
Akimasa Kinoshita ◽  
Takashi Nishi ◽  
Takasumi Ohyanagi ◽  
Tsutomu Yatsuo ◽  
Kenji Fukuda ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Schottky Barrier Height ◽  
Annealing Temperature ◽  
Voltage Drop ◽  
Schottky Contact ◽  
Electrical Characteristics ◽  
X Ray Diffraction ◽  
X Ray ◽  
Current Voltage ◽  
Forward Voltage Drop

The reaction and phase formation of the Ti/SiC Schottky contact as a function of the annealing temperature (400~700oC) were investigated. The Schottky barrier height (fb) and the crystal structure of the samples annealed at the different temperature were measured by the forward current-voltage (IV) characteristics and the x-ray diffraction (XRD), respectively. XRD measurements were performed in the w-2q scan and the pole figure measurement for Ti (101) diffraction peak. The fb was changed as a function of temperature. It was concluded that the fb variation and non-uniformity of the samples annealed at 400oC, 500oC, 600 oC and 700oC was caused by changing the condition at the interface between SiC substrate and Ti. We fabricated the 600V Ti/SiC silicidation SBD annealed at 500oC for 5min. As a result, a low forward voltage drop, low reverse leakage current and stability at high temperature (200 oC) for the Ti/SiC silicidation SBD were shown.

In Situ Growth of PbZrxTi1-xO3 Thin Films by Pulsed Laser Deposition

1990 ◽  
Vol 191 ◽  
Author(s):  
D. B. Chrisey ◽  
J. S. Horwitz ◽  
K. S. Grabowski
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
X Ray ◽  
Composition And Structure ◽  
Elastic Backscattering ◽  
Deposited Film ◽  
Deposited Films

ABSTRACTWe have investigated the composition and structure of thin films of PbZrxTi1-xO3 (x-0.54) produced in situ by pulsed excimer laser deposition from a stoichiometric pressed oxide target. Thin films were deposited onto (100) MgO and SrTiO3 substrates as a function of substrate temperature between room temperature and 750 °C, and oxygen background pressures between vacuum and 300 mtorr. The deposited films were very smooth with particulates covering less than 0.5% of the surface. Elastic backscattering spectroscopy was used to determine the relative atomic fractions. In the deposited films, the Pb stoichiometry was found to be very sensitive to both the substrate temperature and the O2 background pressure. Above ∼600 °C, the Pb content dropped rapidly with increasing substrate temperature for a 50 mtorr 02 background. At 550 °C the Pb content was near-stoichiometric for O2 background pressures between 200 and 300 mtorr but dropped monotonically to ∼20% of the expected value for depositions in a vacuum (i.e., no O2 background). Over this entire range of pressures and temperatures the Ti/Zr stoichiometry ratio was relatively uneffected. The structure and orientation of the deposited films, as determined by x-ray diffraction, followed the Pb deficiency via the production of other phases and orientations. Crystallation of the deposited film was observed at temperatures as low as 400 °C for 200 mtorr O2 background. At 550 °C and 200 –300 mtorr, (100) oriented PbZrxTi1-xO3 was observed on SrTiO3 substrates.

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