Optical Transmission Measurements on MOCVD Grown GaMnN Films on Sapphire

2006 ◽  
Vol 955 ◽  
Author(s):  
Fevzi Erdem Arkun ◽  
Nadia A El-Masry ◽  
John Muth ◽  
Xiyao Zhang ◽  
Amr Mahrouse ◽  
...  
Keyword(s):  
Absorption Band ◽  
Energy Band ◽  
Optical Transmission ◽  
Chemical Vapor ◽  
Band Edge ◽  
Conduction Band Edge ◽  
Broad Absorption Band ◽  
Co Doping ◽  
Transmission Measurements ◽  
Mn Concentration

ABSTRACTWe demonstrate optical transmission measurements performed on 1.2 μm thick GaMnN films grown by metalorganic chemical vapor deposition on (0001) sapphire substrates. According to the data acquired from these measurements, Mn forms a deep acceptor band at 1.4 eV above the valance band of GaMnN. Full width at half maximum of this absorption band increases from 107 meV to 198meV as the Mn concentration increases from 0.3% to 1.6 %; which indicates that this band becomes wider as the concentration of Mn increases in the lattice. A broad absorption band starting at 1.9eV and extending to the band edge of GaMnN was also determined. This was attributed to the transition from the Mn energy band to the conduction band edge of GaMnN. Absorption at both of these bands scales with the Mn concentration and thickness of the films. The effect of co-doping of GaMnN films with magnesium on the transmission spectra was also investigated. The absorption band initially observed at 1.4 eV was shifted to 1.6 eV as a result of introduction of Magnesium into the lattice of GaMnN. From these results we conclude that Mn is incorporated in the lattice and forms an energy band in the bandgap of GaMnN. The width of this energy band is also a function of the Mn concentration in GaMnN.

Deep States in GaN Studied by Thermally Stimulated Current Spectroscopy

1995 ◽  
Vol 395 ◽  
Author(s):  
Z.C. Huang ◽  
J.C. Chen ◽  
D.B. Mott
Keyword(s):  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Surface States ◽  
Chemical Vapor ◽  
Deep Levels ◽  
Band Edge ◽  
Conduction Band Edge ◽  
Thermally Stimulated Current ◽  
Furnace Annealing ◽  
Thermally Stimulated Current Spectroscopy

ABSTRACTDeep levels in insulating GaN grown by metalorganic chemical vapor deposition have been studied using thermally stimulated current (TSC) and photocurrent (PC) spectroscopies. Five main traps were observed by TSC measurement in the as-grown undoped GaN in the range of 0-0.75 eV below the conduction band edge or above the valence band edge. Their activation energies were 0.11, 0.24, 0.36, 0.53 and 0.62 eV, respectively. PC measurements showed three deep levels located within the bandgap at 1.32, 1.70 and 2.36 eV, respectively. Furnace annealing was carried out on GaN for identifying all the observed deep levels. We have found that the 0.24, 0.36 and 0.53 eV traps were eliminated by annealing at 1000°C under N2for six hours, whereas the 0.62 eV trap density increased after annealing. The three deep levels detected by the PC measurement were not affected by annealing. The 1.70 eV trap, which is located at the midgap, does not seem to compensate with narrow donors. We attribute the 0.11 eV trap to surface states, and the 0.62 eV trap to nitrogen vacancies.

Temperature Dependence of the Absorption Band Gap Edge of GaN

1995 ◽  
Vol 395 ◽  
Author(s):  
M. O. Manasreh ◽  
A. K. Sharma
Keyword(s):  
Absorption Band ◽  
Molecular Beam ◽  
Empirical Relationship ◽  
Fundamental Absorption Edge ◽  
Chemical Vapor ◽  
Band Edge ◽  
Absorption Band Edge ◽  
Energy Position ◽  
Sapphire Substrates ◽  
Vapor Deposition Technique

ABSTRACTThe optical absorption near the fundamental absorption edge in GaN thin films grown on sapphire substrates is studied as a function of temperature. The absorption band edge was determined from either the energy position of the exciton line in samples grown by metalorganic chemical vapor deposition technique, or from the first derivative of the absorption spectra in samples grown by molecular beam epitaxy technique. The band edge energies determined in the temperature range of 13 – 300 K were fitted with Varshni empirical relationship: Eg(K) = Eg(0) – α T2/(T + θD) and with the expression: Eg(K) = Eg(0) – κ/[exp(θE/T) – 1]. It is found that Eg(0), α, θD, and θE to be sample-dependent, which suggests that defects and dislocations significantly affect the optical band edge in GaN.

scholarly journals Terahertz characterization of two-dimensional low-conductive layers enabled by metal gratings

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Prashanth Gopalan ◽  
Yunshan Wang ◽  
Berardi Sensale-Rodriguez
Keyword(s):  
Optical Transmission ◽  
Terahertz Spectroscopy ◽  
Design Guidelines ◽  
Two Dimensional ◽  
Highly Sensitive ◽  
Transmission Measurements ◽  
Metal Gratings ◽  
Low Sensitivity ◽  
Non Destructive

AbstractWhile terahertz spectroscopy can provide valuable information regarding the charge transport properties in semiconductors, its application for the characterization of low-conductive two-dimensional layers, i.e., σs <  < 1 mS, remains elusive. This is primarily due to the low sensitivity of direct transmission measurements to such small sheet conductivity levels. In this work, we discuss harnessing the extraordinary optical transmission through gratings consisting of metallic stripes to characterize such low-conductive two-dimensional layers. We analyze the geometric tradeoffs in these structures and provide physical insights, ultimately leading to general design guidelines for experiments enabling non-contact, non-destructive, highly sensitive characterization of such layers.

scholarly journals Conduction Band Edge Energy Profile Probed by Hall Offset Voltage in InGaZnO Thin Films

Micromachines ◽  
2020 ◽  
Vol 11 (9) ◽  
pp. 822
Author(s):  
Hyo-Jun Joo ◽  
Dae-Hwan Kim ◽  
Hyun-Seok Cha ◽  
Sang-Hun Song
Keyword(s):  
Magnetic Field ◽  
Electron Density ◽  
Conduction Band ◽  
Electron System ◽  
Band Edge ◽  
Conduction Band Edge ◽  
Offset Voltage ◽  
Three Samples ◽  
Dimensional Electron System ◽  
Longitudinal Distance

We measured and analyzed the Hall offset voltages in InGaZnO thin-film transistors. The Hall offset voltages were found to decrease monotonously as the electron densities increased. We attributed the magnitude of the offset voltage to the misalignment in the longitudinal distance between the probing points and the electron density to Fermi energy of the two-dimensional electron system, which was verified by the coincidence of the Hall voltage with the perpendicular magnetic field in the tilted magnetic field. From these results, we deduced the combined conduction band edge energy profiles from the Hall offset voltages with the electron density variations for three samples with different threshold voltages. The extracted combined conduction band edge varied by a few tens of meV over a longitudinal distance of a few tenths of µm. This result is in good agreement with the value obtained from the analysis of percolation conduction.

scholarly journals Mn charge states in GaMnN as a function of Mn concentration and co-doping

2007 ◽  
Vol 1040 ◽  
Author(s):  
Enno Malguth ◽  
Axel Hoffmann ◽  
Wolfgang Gehlhoff ◽  
Matthew H. Kane ◽  
Ian T. Ferguson
Keyword(s):  
Electron Spin Resonance ◽  
Electron Spin ◽  
Magnetic Semiconductor ◽  
Electron Spin Resonance Spectroscopy ◽  
Resonance Spectroscopy ◽  
Mg Doping ◽  
Co Doping ◽  
Spin Resonance ◽  
P Type ◽  
Mn Concentration

AbstractIn the context of the pursuit of a dilute magnetic semiconductor for spintronic applications, a set of GaMnN samples with varying Mn concentration and Si or Mg co-doping was investigated by optical and electron spin resonance spectroscopy. The results clearly demonstrate how the charge state of Mn is changed between 2+, 3+ and 4+ by Mg and Si co-doping. For p-type GaMnN we show that the introduction of the Mn3+/4+ donor can be compensated by Mg co-doping lowering the Fermi energy below the Mn3+/4+ level. While our results are in agreement with the hypothesis that the infrared photoluminescence appearing in GaMnN upon Mg doping originates from Mn4+, an unambiguous proof is still to be presented. Under this assumption, our measurements show that the Mn4+ center must be excited via an extra-center process at 2.54 eV.

SURFACE-CHARGE-ENABLED PHOTOLYTIC HYDROGEN GENERATION IN V2O5·H2O/Au NANOCONJUGATES

MRS Advances ◽  
2016 ◽  
Vol 1 (46) ◽  
pp. 3121-3126
Author(s):  
Sunith Varghese ◽  
Charuksha Walgama ◽  
Mark Wilkins ◽  
Sadagopan Krishnan ◽  
Kaan Kalkan
Keyword(s):  
Surface Charge ◽  
Hydrogen Generation ◽  
Hydrogen Reduction ◽  
Energy Levels ◽  
Sol Gel ◽  
Band Edge ◽  
Conduction Band Edge ◽  
Current Voltage ◽  
Negative Surface ◽  
Negative Surface Charge

ABSTRACTThe present work investigates sol-gel synthesized vanadium oxyhydrate (V2O5·H2O) nanowires decorated with Au nanoparticles as potential photolytic H2 generators. As determined by UV photoelectron and optical spectroscopies, the conduction band edge of V2O5·H2O lies 0.6 eV below standard H+ reduction potential, implying no H2 can be generated. On the contrary, as measured by gas chromatography, our nanoconjugates yield reproducible light-to-hydrogen conversion efficiency of 5.3%, for the first hour of photolysis under 470 nm excitation. To explain the observed hydrogen reduction, we have hypothesized the vanadia electron energy levels are raised by some negative surface charge. With the objective of validating this hypothesis, we have performed cyclic current-voltage measurements. The derived conduction and valence band edge energies are not only consistent with the optical band gaps, but also validate the hypothesized energy increase by 1.6 eV, respectively. The negative surface charge is also corroborated by the ζ-potential. Based on the measured pH of 2.4, we attribute the negative surface charge to Lewis acid nature of the nanowires, establishing dative bonding with OH−. The present work establishes the importance of surface charge in photoelectrochemical reactions, where it can be instrumental and enabling in photolytic fuel production.

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