Hot-Wire Deposited Nanocrystalline Silicon TFTs on Plastic Substrates

2007 ◽  
Vol 989 ◽  
Author(s):  
Farhad Taghibakhsh ◽  
Michael M. Adachi ◽  
Karim S. Karim
Keyword(s):  
Vapor Deposition ◽  
Thermal Damage ◽  
Gate Dielectric ◽  
Chemical Vapor ◽  
Nanocrystalline Silicon ◽  
Field Effect Mobility ◽  
Hot Wire ◽  
Current Ratio ◽  
Plastic Substrates ◽  
Electron Field

AbstractHot-wire chemical vapor deposition (HWCVD) technique was used to deposit nanocrystalline silicon (nc-Si) thin film transistors (TFT) on thin polyimide sheets. Two straight tantalum filaments at 1850°C with a substrate to filament distance of 4 cm was used to deposit HWCVD nc-Si with no thermal damage to plastic sheet. Top-gate staggered TFTs were fabricated at 150°C and 250°C using a HWCVD nc-Si channel, PECVD silicon nitride gate dielectric, and microcrystalline n+ drain/source contacts. Leakage current of 3.3×10-12 A, switching current ratio of 3×106, and sub threshold swing of 0.51 V/decade were obtained for TFTs with aspect ratio of 1400 µm / 100 µm fabricated at 150°C. The highest electron field effect mobility was found to be 0.3 cm2/V.s observed for TFTs deposited at lower substrate temperature. Measurements showed superior threshold voltage stability of HW nc-Si TFTs over their amorphous silicon (a-Si) counterparts.

Piezoresistive properties of nanocrystalline silicon thin films deposited on plastic substrates by hot-wire chemical vapor deposition

2007 ◽  
Vol 515 (19) ◽  
pp. 7658-7661 ◽  
Author(s):  
P. Alpuim ◽  
M. Andrade ◽  
V. Sencadas ◽  
M. Ribeiro ◽  
S.A. Filonovich ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Nanocrystalline Silicon ◽  
Hot Wire ◽  
Plastic Substrates ◽  
Silicon Thin Films

High Mobility a-Si:H TFT Fabricated by Hot Wire Chemical Vapor Deposition

2010 ◽  
Vol 1245 ◽  
Author(s):  
Chun-Yuan Hsueh ◽  
Chieh-Hung Yang ◽  
Si-Chen Lee
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Field Effect ◽  
High Mobility ◽  
Chemical Vapor ◽  
Field Effect Mobility ◽  
Hot Wire ◽  
Low Threshold ◽  
Hydrogenated Amorphous ◽  
Very High

AbstractThe hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs) having a very high field-effect mobility of 1.76 cm2/V-s and a low threshold voltage of 2.43 V have been fabricated successfully using the hot wire chemical vapor deposition (HWCVD).

Gas doping ratio effects on p-type hydrogenated nanocrystalline silicon thin films grown by hot-wire chemical vapor deposition

2008 ◽  
Vol 255 (5) ◽  
pp. 2910-2915 ◽  
Author(s):  
P.Q. Luo ◽  
Z.B. Zhou ◽  
K.Y. Chan ◽  
D.Y. Tang ◽  
R.Q. Cui ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Nanocrystalline Silicon ◽  
Hot Wire ◽  
Silicon Thin Films ◽  
P Type ◽  
Doping Ratio

Monolithically Integrated p- & n- Channel Thin Film Transistors of Nanocrystalline Silicon on Plastic Substrates

2004 ◽  
Vol 808 ◽  
Author(s):  
I-Chun Cheng ◽  
Sigurd Wagner
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Structural Evolution ◽  
Nanocrystalline Silicon ◽  
Leakage Currents ◽  
Plastic Substrates ◽  
Monolithically Integrated ◽  
Glass Substrates ◽  
Electron Field

ABSTRACTInverters made of monolithically integrated p- and n-channel thin film transistors of nanocrystalline silicon were demonstrated on both Corning 1737 glass and Kapton E polyimide substrates. The TFT's geometry is staggered top-gate, bottom-source/rain. A nc-Si:H seed layer promotes the structural evolution of the nc-Si:H channel. Electron field-effect mobilities of 15 - 30 cm2V−1s-1 and hole mobilities of 0.15 - 0.35 cm2V−1s−1 were obtained. Slightly lower carrier mobilities were observed in the TFTs made on polyimide than on glass substrates. High gate leakage currents and offsets between the supply HIGH voltages and the output voltages in the inverters indicate that the low-temperature gate dielectric needs improvement.

Hot-wire CVD a-Si:H TFT on Plastic Substrates

2006 ◽  
Vol 910 ◽  
Author(s):  
Farhad Taghibakhsh ◽  
K.S. Karim
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Chemical Vapor ◽  
Plastic Substrate ◽  
Hot Wire ◽  
Low Leakage

AbstractFabrication of hot-wire chemical vapor deposition (HWCVD) of amorphous silicon (a-Si) thin film transistors (TFT) on thin polyamide sheets is reported. A single graphite filament at 1500 °C was used for HWCVD and device quality amorphous silicon films were deposited with no thermal damage to plastic substrate. Top-gate staggered thin film transistors (TFTs) were fabricated at 150°C using hot-wire deposited a-Si channel, Plasma enhanced chemical vapor deposition (PECVD) silicon nitride gate dielectric, and microcrystalline n+ drain/source contacts. Low leakage current of 5×10-13 A, high switching current ratio of 1.3×107, and small sub threshold swing of 0.3 V/dec was obtained for TFTs with aspect ratio of 1300μm/100μm. The field effect mobility was extracted to be 0.34 cm2/V.s.

Sign in / Sign up

Export Citation Format

Share Document