New Developments in the Defect Structure of Implanted Furnace-Annealed Silicon on Sapphire

1981 ◽  
Vol 10 ◽  
Author(s):  
Eliezer Dovid Richmond ◽  
Alvin R. Knudson ◽  
Tom J. Magee
Keyword(s):  
Silicon Film ◽  
Stacking Faults ◽  
High Energy ◽  
Structural Defects ◽  
Dislocation Loops ◽  
Bulk Silicon ◽  
New Developments ◽  
Transmission Electron ◽  
Silicon Implantation ◽  
First Time

ABSTRACTThe structural defect properties of silicon on sapphire (SOS) are investigated with transmission electron microscopy and Rutherford backscattering. The results for as-grown SOS films are compared with SOS films which have been implanted with 1016 Si+ ions cm− 2 at an energy of 170 keV and annealed at 600°C (1 h) and 1000°C (18 h). The regrowth proceeds from the silicon surface even though it is noncrystalline as determined by reflection high energy electron diffraction. The structural defects consist of stacking faults, microtwins and dislocations. The stacking faults and microtwins show a dramatic reduction with processing. The nature of the structural defects at the interface after implantation and annealing is reported here for the first time. It is different from the bulk of the silicon film and consists of a layer of dislocation loops of various sizes and short dislocation lines which follow the interface and curve upwards. This behavior is analogous with the secondary defects generated in self-implanted bulk silicon. Suggestions, based on results from bulk silicon implantation, are made for optimizing the ion implantation furnace annealing process.

Silver Nanocrystals at Cavities Created by High Energy Helium Implantation in Bulk Silicon

2007 ◽  
Vol 994 ◽  
Author(s):  
Rachid El Bouayadi ◽  
Gabrielle Regula ◽  
Maryse Lancin ◽  
Eduardo Larios ◽  
Bernard Pichaud ◽  
...  
Keyword(s):  
Room Temperature ◽  
High Energy ◽  
Nickel Silicide ◽  
Bulk Silicon ◽  
Shape Characteristic ◽  
Transmission Electron ◽  
Helium Implantation ◽  
Ag Deposition ◽  
First Time ◽  
Good Agreement

AbstractHigh resolution transmission electron microscopy observations show for the first time the presence of two orientations of pure silver precipitates in nanocavities induced in bulk silicon by implantation at 1.6 MeV with a dose of 5×1016 He+ cm−2 and a two hour annealing at 1050°C. These precipitates were called A and B to refer to the two well-known nickel silicide (NiSi2) precipitates or Ag films on a {111} silicon surface. Thus, the A precipitate corresponds to a growth of silver nanocrystal on {111} cavity walls in epitaxy with the Si matrix with an orientation relationship Ag(-111)[211]||Si(-111)[211]. The B precipitate develops on a {111} plane parallel to a {111} cavity wall as well, but in a twin orientation with respect to the Si matrix defined by Ag(-111)[211]||Si(-111)[-2-1-1]. The Ag nanocrystals have a size ranging from a few nm to 50 nm. Most of them have the faceted-shape characteristic of “clean” cavities. They are either A precipitates or they contain alternatively A and B bands in good agreement with both the low stacking fault energy of silver and the two types of nanocrystal orientations obtained by Ag deposition on (111) Si substrate at room temperature. Some Ag precipitates were also found at dislocations located at the He+ projection range, but these trapping sites were found thermally unstable as compared to the cavity ones. Indeed, during a second identical annealing, the precipitates grow in cavities whereas they fade at dislocations.

Formation of U-type hexaferrites

2004 ◽  
Vol 19 (8) ◽  
pp. 2462-2470 ◽  
Author(s):  
Darja Lisjak ◽  
Darko Makovec ◽  
Miha Drofenik
Keyword(s):  
Crystal Structure ◽  
Electron Microscopy ◽  
Stacking Faults ◽  
High Energy ◽  
Structural Defects ◽  
X Ray Diffraction ◽  
X Ray ◽  
Calcination Temperatures ◽  
Intermediate Phases ◽  
Transmission Electron

The formation of U-type hexaferrites with the composition Ba4B2Fe36O60 (B = Co, Ni, Zn) was studied. Samples were characterized by means of x-ray diffraction, electron microscopy (with energy-dispersive spectroscopy), and thermogravimetric and thermomagnetic analyses. U-hexaferrites are formed from the intermediate phases M-hexaferrite (BaFe12O19) and Y-hexaferrite (Ba2B2Fe12O22), which at the same time represent units in the U-hexaferrites’ crystal structure. The preparation of monophase U-hexaferrites was made possible by combining high-energy milling or chemical coprecipitation with a calcination at 1250–1300 °C. Structural defects, such as stacking faults, were observed in monophase samples with a high-resolution transmission electron microscope. The observed defects can be regarded as seeds for the formation of other hexaferrite phases after prolonged calcination times or higher calcination temperatures.

HRTEM Study of the Extended Defect Structure in Epitaxial Ba0.3Sr0.7TiO3 Thin Films Grown on (001) LaAlO3

2002 ◽  
Vol 751 ◽  
Author(s):  
C.J. Lu ◽  
L.A. Bendersky ◽  
K. Chang ◽  
I. Takeuchi
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Defect Structure ◽  
Stacking Faults ◽  
Threading Dislocations ◽  
Extended Defect ◽  
Displacement Vectors ◽  
Transmission Electron ◽  
First Time ◽  
Dislocation Dissociation

ABSTRACTThe defect structure of a 350-nm-thick epitaxial Ba0.3Sr0.7TiO3 thin film grown on (001) LaAlO3 has been investigated using conventional and high-resolution transmission electron microscopy. The predominant defects in the film are threading dislocations (TDs) with Burgers vectors b = <100> and <110>. A high density of extended stacking faults (SFs) with displacement vectors R = (1/2)<110> were also observed in the near-interface region of the film. The faults are associated with dissociated dislocations and partial halfloops. Some findings about dislocation dissociation and the atomic structure of the (1/2)<110> faults are observed for the first time in perovskites to our knowledge. The mechanisms for the generation, dissociation and evolution of the TDs as well as for the formation mechanism of the SFs are discussed.

Stacking Faults in SiC Nanowires

2008 ◽  
Vol 8 (7) ◽  
pp. 3504-3510 ◽  
Author(s):  
K. L. Wallis ◽  
M. Wieligor ◽  
T. W. Zerda ◽  
S. Stelmakh ◽  
S. Gierlotka ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Stacking Faults ◽  
Multiwall Carbon Nanotubes ◽  
Structural Defects ◽  
X Ray Diffraction ◽  
Ir Spectrometry ◽  
X Ray ◽  
Sic Nanowires ◽  
Transmission Electron ◽  
Multiwall Carbon

SiC nanowires were obtained by a reaction between vapor silicon and multiwall carbon nanotubes, CNT, in vacuum at 1200 °C. Raman and IR spectrometry, X-ray diffraction and high resolution transmission electron microscopy, HRTEM, were used to characterize properties of SiC nanowires. Morphology and chemical composition of the nanowires was similar for all samples, but concentration of structural defects varied and depended on the origin of CNT. Stacking faults were characterized by HRTEM and Raman spectroscopy, and both techniques provided complementary results. Raman microscopy allowed studying structural defects inside individual nanowires. A thin layer of amorphous silicon carbide was detected on the surface of nanowires.

TEM Study of Mg-Doped Bulk GaN Crystals

1999 ◽  
Vol 572 ◽  
Author(s):  
Z. Liliental-Weber ◽  
M. Benamara ◽  
S. Ruvimov ◽  
J. H. Mazur ◽  
J. Washburn ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Growth Rate ◽  
Stacking Faults ◽  
High Energy ◽  
Defect Distribution ◽  
Transmission Electron ◽  
Bulk Gan ◽  
Shed Light ◽  
Mg Doped

ABSTRACTTransmission electron microscopy was applied to cross-sectioned samples to study surface morphology, sample polarity and defect distribution in bulk GaN samples doped with Mg. These crystals were grown from a Ga melt under high hydrostatic pressure of Nitrogen. It was shown that the types of defects and their distribution along the c-axis depends strongly on sample polarity. Based on this finding the growth rate along the c-axis for the two polar directions was compared and shown to be approximately ten times larger for Ga polarity than for N-polarity. In the part of the crystals with Ga polarity pyramidal defects with a base consisting of high energy stacking faults were found. The parts of the crystals grown with Npolarity were either defect free or contained regularly spaced stacking faults. Growth of these regularly spaced cubic monolayers is polarity dependent; this structure was formed only for the growth with N polarity and only for the crystals doped with Mg. Formation of this superstructure is similar to the polytypoid structure formed in AlN crystals rich in oxygen. It is also likely that oxygen can decorate the cubic monolayers and compensate Mg. This newly observed structure may shed light on the difficulties of p-doping in GaN:Mg.

scholarly journals Structural Defects in Laterally Overgrown GaN Layers Grown on Non-polar Substrates

2006 ◽  
Vol 955 ◽  
Author(s):  
Zuzanna Liliental-Weber ◽  
X. Ni ◽  
H. Morkoc
Keyword(s):  
Large Angle ◽  
Stacking Faults ◽  
Growth Direction ◽  
Convergent Beam Electron Diffraction ◽  
Structural Defects ◽  
Threading Dislocations ◽  
Beam Electron ◽  
Transmission Electron ◽  
Wing Width ◽  
Convergent Beam

ABSTRACTTransmission electron microscopy was used to study defects in lateral epitaxial layers of GaN which were overgrown on a template of a-plane (1120) GaN grown on (1102) r-plane Al2O3. A high density of basal stacking faults is formed in these layers because the c-planes of wurtzite structure are arranged along the growth direction. Density of these faults is decreasing at least by two orders of magnitude lower in the wings compared to the seed areas. Prismatic stacking faults and threading dislocations are also observed, but their densities drastically decrease in the wings. The wings grow with opposite polarities and the Ga-wing width is at least 6 times larger than N-wing and coalescence is rather difficult. Some tilt and twist was detected using Large Angle Convergent Beam Electron Diffraction.

scholarly journals Microstructure Evolution in He-Implanted Si at 600 °C Followed by 1000 °C Annealing

Materials ◽  
2021 ◽  
Vol 14 (17) ◽  
pp. 5107
Author(s):  
Zhen Yang ◽  
Zhiping Zou ◽  
Zeyang Zhang ◽  
Yubo Xing ◽  
Tao Wang
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Single Crystal ◽  
Microstructure Evolution ◽  
Cavity Growth ◽  
Stacking Fault ◽  
Structural Defects ◽  
Dislocation Loops ◽  
Transmission Electron

Si single crystal was implanted with 230 keV He+ ions to a fluence of 5 × 1016/cm2 at 600 °C. The structural defects in Si implanted with He at 600 °C and then annealed at 1000 °C were investigated by transmission electron microscopy (TEM) and high-resolution transmission electron microscopy (HRTEM). The microstructure of an as-implanted sample is provided for comparison. After annealing, rod-like defects were diminished, while tangled dislocations and large dislocation loops appeared. Dislocation lines trapped by cavities were directly observed. The cavities remained stable except for a transition of shape, from octahedron to tetrakaidecahedron. Stacking-fault tetrahedrons were found simultaneously. Cavity growth was independent of dislocations. The evolution of observed lattice defects is discussed.

Growth and Structure of Al/MgO Interfaces

1994 ◽  
Vol 357 ◽  
Author(s):  
T. Wagner ◽  
M. Ruhle
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Diffraction ◽  
High Vacuum ◽  
High Energy ◽  
Ultra High Vacuum ◽  
Structural Defects ◽  
Cross Sectional ◽  
Aluminum Films ◽  
Transmission Electron

AbstractThe A1/MgO system has been used as a model system to study growth processes and structure at metal/ceramic interfaces. Aluminum films were grown on air-cleaved MgO (100) substrates in ultra high vacuum (UHV) by molecular beam epitaxy (MBE). The substrates and films were characterized by reflection high energy electron diffraction (RHEED), x-ray diffraction (XRD), conventional transmission electron microscopy (CTEM), and high resolution transmission electron microscopy (HREM). XRD measurements exhibited a pronounced {100} texture. Employing electron diffraction in the TEM on cross sectional samples, we observed the following orientation relationship between Al and MgO: (100)A1 II (100)MgO; [010]A1 II [010]MgO. The atomistic structure of the interface was investigated by HREM. Regions of structural defects can be identified clearly at the interface.

The structural transformation of anatase TiO2 by high-energy vibrational ball milling

1999 ◽  
Vol 14 (3) ◽  
pp. 841-848 ◽  
Author(s):  
Suchitra Sen ◽  
M. L. Ram ◽  
S. Roy ◽  
B. K. Sarkar
Keyword(s):  
Electron Microscopy ◽  
Ball Milling ◽  
Structural Transformation ◽  
Milled Powder ◽  
High Energy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
First Time ◽  
Pressure Phase

The structural transformation of anatase TiO2 by high-energy vibrational ball milling was studied in detail by different analytical methods of x-ray diffraction (XRD), scanning electron microscopy (SEM), and transmission electron microscopy (TEM). This structural transformation involves both phase transition and nanoparticle formation, and no amorphization was observed. The crystallite size was found to decrease with milling time down to nanometer size ∼13 nm and approaching saturation, accompanied by phase transformation to metastable phases, i.e., TiO2(II), which is a high-pressure phase and TiO2(B), which was identified in ball-milled powder reported for the first time in this paper. These phases eventually started transforming to rutile by further milling.

Dependence of the Defects Present in InAlAs/InP on the Substrate Temperature

1991 ◽  
Vol 240 ◽  
Author(s):  
F. Peiro ◽  
A. Cornet ◽  
A. Herms ◽  
J. R. Morante ◽  
A. Georgakilas ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Stacking Faults ◽  
Structural Defects ◽  
Threading Dislocations ◽  
Transmission Electron ◽  
Inp Substrates

ABSTRACTThe crystalline quality of InAlAs layers, grown by Molecular Beam Epitaxy on (100) InP substrates, has been investigated by Transmission Electron Microscopy in order to study the influence of InAlAs growth temperature (Tg) on the density of structural defects present in the layers. Tg was varied from 300°C up to 530°C. The density of stacking faults and threading dislocations drops dramatically as Tg increas

Sign in / Sign up

Export Citation Format

Share Document