Concentric Metallic-Piezoelectric Microtube Arrays

2008 ◽  
Vol 1071 ◽  
Author(s):  
Hongjin Fan ◽  
S. Kawasaki ◽  
J. M. Gregg ◽  
A. Langner ◽  
T. Leedham ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Inkjet Printing ◽  
Layer Structure ◽  
Film Structure ◽  
Elemental Mapping ◽  
Porous Si ◽  
X Ray ◽  
Transmission Electron

AbstractTrilayer concentric metallic-piezoelectric-metallic microtubes are fabricated by infiltrating porous Si templates with sol precursors. LaNiO3 (LNO) is used as the inner and outer electrode material and PbZrTiO3 (PZT) is the middle piezoelectric layer. Structure of the microtubes is characterized in details using scanning and transmission electron microscopy which are equipped with energy dispersive X-ray spectroscopy for elemental mapping. The hysteresis of a trilayered thin film structure of LNO-PZT-LNO is shown. This trilayered tubes might find applications in inkjet printing.

Identification of the Failure Mechanism of a Thin Film on a Thick Substrate by Means of Synchrotron X-Ray Topography Combined with Transmission Electron Microscopy

1987 ◽  
Vol 108 ◽  
Author(s):  
D. Goyal ◽  
W. Ng ◽  
A. H. King ◽  
J. C. Bilello
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Film Thickness ◽  
Film Stress ◽  
Silicon Substrates ◽  
X Ray ◽  
Transmission Electron ◽  
Thick Substrate

ABSTRACTWe have used synchrotron x-ray topographic techniques to study the stresses in thin films formed upon silicon substrates either by evaporation or sputtering. It is found that the film stress generally decreases with increasing film thickness for evaporated films, but film delamination occurs at a well defined film thickness. Transmission electron microscope studies have been performed on the same specimens in order to reveal what mechanisms are involved with the delamination of the films.

scholarly journals Lithiation of multilayer Ni/NiO electrodes: criticality of nickel layer thicknesses on conversion reaction kinetics

2017 ◽  
Vol 19 (30) ◽  
pp. 20029-20039 ◽  
Author(s):  
Guennadi Evmenenko ◽  
Timothy T. Fister ◽  
D. Bruce Buchholz ◽  
Fernando C. Castro ◽  
Qianqian Li ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Reaction Kinetics ◽  
Layer Thickness ◽  
Morphological Changes ◽  
Nickel Layer ◽  
X Ray ◽  
Transmission Electron ◽  
Buffer Layer Thickness

X-ray reflectivity and transmission electron microscopy (TEM) were used to characterize the morphological changes in thin film electrodes with alternating Ni and NiO layers during lithiation as a function of the Ni buffer layer thickness.

Structure of composition-modulated Cu/Ni thin films prepared by electrodeposition

1989 ◽  
Vol 4 (4) ◽  
pp. 755-758 ◽  
Author(s):  
J. Yahalom ◽  
D. F. Tessier ◽  
R. S. Timsit ◽  
A. M. Rosenfeld ◽  
D. F. Mitchell ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Cross Section ◽  
Film Structure ◽  
Composition Modulation ◽  
Transmission Electron ◽  
Electron Energy Loss ◽  
Multilayered Thin Films

Copper/nickel multilayered thin-films prepared by electrodeposition have been examined in cross section by electron energy loss spectroscopy and high-resolution transmission electron microscopy. The results of the examinations provide the first direct experimental evidence of the large composition modulation across successive layers in the thin-film structure and the coherent nature of Cu/Ni interfaces.

Light Emission from Porous Silicon Subjected to Rapid Thermal Oxidation

1992 ◽  
Vol 283 ◽  
Author(s):  
A. G. Cullis ◽  
L. T. Canham ◽  
G. M. Williams ◽  
P. W. Smith ◽  
O. D. Dosser
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Porous Silicon ◽  
Light Emission ◽  
Porous Si ◽  
Light Emitting ◽  
X Ray ◽  
Amorphous Phases ◽  
Transmission Electron ◽  
Si Nanostructures

ABSTRACTLuminescent oxidised porous Si is produced by rapid thermal annealing of the anodised material in a dry oxygen ambient. Its light-emitting properties are studied by both photoluminescence and cathodoluminescence methods. The structure of the oxidised material is examined by transmission electron microscopy, while its oxygen content is determined by X-ray microanalysis. These investigations show that crystalline Si nanostructures remain in the oxidised porous material and account for its luminescence properties. The work demonstrates that the speculated importance of either Si-based amorphous phases or the interesting material, siloxene, in this regard is unrealistic.

Investigation of Intermetallic Phase Formation and Structural Analysis in Annealed Al/Cu Bilayer Thin Films

2013 ◽  
Vol 845 ◽  
pp. 221-225
Author(s):  
Zulhelmi Alif Abdul Halim ◽  
Muhammad Azizi Mat Yajid ◽  
Zulkifli Mohd Rosli ◽  
Riyaz Ahmad Mohamad Ali
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Structural Analysis ◽  
Annealing Temperature ◽  
Intermetallic Phase ◽  
Intermetallic Phases ◽  
X Ray ◽  
Transmission Electron

The growth of intermetallic phases in Al/Cu bilayers thin film having 2/3 layer thickness ratios were characterized by X-ray powder diffraction (XRD), energy dispersive X-ray (EDX) and transmission electron microscopy (TEM). In annealing temperature of 200 °C, the growth is controlled by Cu diffusion which resulted to formation of θ-Al2Cu, η-AlCu, ζ-Al3Cu4 and γ-Al4Cu9 phase.

Chemical deterioration of Al film prepared on CF4 plasma-etched LiNbO3 surface

2000 ◽  
Vol 15 (2) ◽  
pp. 476-482 ◽  
Author(s):  
Hirotoshi Nagata ◽  
Yasuyuki Miyama ◽  
Naoki Mitsugi ◽  
Kaori Shima
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Buffer Layer ◽  
Amorphous Phase ◽  
Photoelectron Spectroscopy ◽  
X Ray ◽  
Transmission Electron ◽  
Optical Polarizer ◽  
Al Thin Film

The fabrication process of an Al thin-film optical polarizer on LiNbO3 waveguides after CF4 plasma dry etching of a previously deposited SiO2 buffer layer was investigated. The problem in this process is a precipitation of compounds containing C, O, F, and Li on the etched LiNbO3 surface and a chemical deterioration of the Al caused by a reaction with these precipitates. Most notably, the growth of amorphous phase in addition to the crystalline Al metal grains and a partial oxidization of Al were found at the interface using transmission electron microscopy and x-ray photoelectron spectroscopy.

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