scholarly journals Atomic Layer Deposition of Metal Oxide Films on GaAs (100) surfaces

2009 ◽  
Vol 1155 ◽  
Author(s):  
Theodosia Gougousi ◽  
John W. Lacis ◽  
Justin C Hackley ◽  
John Demaree
Keyword(s):  
Atomic Layer Deposition ◽  
Photoelectron Spectroscopy ◽  
Film Growth ◽  
Atomic Layer ◽  
Metal Oxide Films ◽  
Rutherford Back Scattering ◽  
Native Oxides ◽  
Layer Deposition ◽  
Back Scattering ◽  
Film Substrate

AbstractAtomic Layer Deposition is used to deposit HfO2 and TiO2 films on GaAs (100) native oxides and etched surfaces. For the deposition of HfO2 films two different but similar ALD chemistries are used: i) tetrakis dimethyl amido hafnium (TDMAHf) and H2O at 275°C and ii) tetrakis ethylmethyl amido hafnium (TEMAHf) and H2O at 250°C. TiO2 films are deposited from tetrakis dimethyl amido titanium (TDMATi) and H2O at 200°C. Rutherford Back Scattering shows linear film growth for all processes. The film/substrate interface is examined using x-ray Photoelectron Spectroscopy and confirms the presence of an “interfacial cleaning” mechanism.

Atomic Layer Deposition of TiN below 600 K Using N2H4

2018 ◽  
Vol 282 ◽  
pp. 232-237
Author(s):  
Adam Hinckley ◽  
Anthony Muscat
Keyword(s):  
Growth Rate ◽  
Atomic Layer Deposition ◽  
Titanium Nitride ◽  
Photoelectron Spectroscopy ◽  
Film Growth ◽  
Detection Limits ◽  
Atomic Layer ◽  
Volatile Species ◽  
X Ray ◽  
Layer Deposition

Atomic layer deposition (ALD) was used to grow titanium nitride (TiN) on SiO2with TiCl4and N2H4. X-ray photoelectron spectroscopy (XPS) and ellipsometry were used to characterize film growth. A hydrogen-terminated Si (Si-H) surface was used as a reference to understand the reaction steps on SPM cleaned SiO2. The growth rate of TiN at 573 K doubled on Si-H compared to SiO2because of the formation of Si-N bonds. When the temperature was raised to 623 K, O transferred from Ti to Si to form Si-N when exposed to N2H4. Oxygen and Ti could be removed at 623 K by TiCl4producing volatile species. The added surface reactions reduce the Cl in the film below detection limits.

scholarly journals Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films

2013 ◽  
Vol 4 ◽  
pp. 732-742 ◽  
Author(s):  
Jörg Haeberle ◽  
Karsten Henkel ◽  
Hassan Gargouri ◽  
Franziska Naumann ◽  
Bernd Gruska ◽  
...  
Keyword(s):  
Growth Rate ◽  
Refractive Index ◽  
Atomic Layer Deposition ◽  
Photoelectron Spectroscopy ◽  
Film Growth ◽  
Atomic Layer ◽  
Silicon Substrates ◽  
Initial State ◽  
Elemental Ratios ◽  
Layer Deposition

We report on results on the preparation of thin (<100 nm) aluminum oxide (Al2O3) films on silicon substrates using thermal atomic layer deposition (T-ALD) and plasma enhanced atomic layer deposition (PE-ALD) in the SENTECH SI ALD LL system. The T-ALD Al2O3 layers were deposited at 200 °C, for the PE-ALD films we varied the substrate temperature range between room temperature (rt) and 200 °C. We show data from spectroscopic ellipsometry (thickness, refractive index, growth rate) over 4” wafers and correlate them to X-ray photoelectron spectroscopy (XPS) results. The 200 °C T-ALD and PE-ALD processes yield films with similar refractive indices and with oxygen to aluminum elemental ratios very close to the stoichiometric value of 1.5. However, in both also fragments of the precursor are integrated into the film. The PE-ALD films show an increased growth rate and lower carbon contaminations. Reducing the deposition temperature down to rt leads to a higher content of carbon and CH-species. We also find a decrease of the refractive index and of the oxygen to aluminum elemental ratio as well as an increase of the growth rate whereas the homogeneity of the film growth is not influenced significantly. Initial state energy shifts in all PE-ALD samples are observed which we attribute to a net negative charge within the films.

Aluminum Dihydride Complexes and their Unexpected Application in Atomic Layer Deposition of Titanium Carbonitride Films

2018 ◽  
Author(s):  
Kyle J. Blakeney ◽  
Philip D. Martin ◽  
Charles H. Winter
Keyword(s):  
Atomic Layer Deposition ◽  
Photoelectron Spectroscopy ◽  
Film Growth ◽  
High Growth ◽  
Atomic Layer ◽  
Grazing Incidence ◽  
High Growth Rate ◽  
Titanium Carbonitride ◽  
X Ray ◽  
Layer Deposition

<p>Aluminum dihydride complexes containing amido-amine ligands were synthesized and evaluated as potential reducing precursors for thermal atomic layer deposition (ALD). Highly volatile monomeric complexes AlH<sub>2</sub>(tBuNCH<sub>2</sub>CH<sub>2</sub>NMe<sub>2</sub>) and AlH<sub>2</sub>(tBuNCH<sub>2</sub>CH<sub>2</sub>NC<sub>4</sub>H<sub>8</sub>) are more thermally stable than common Al hydride thin film precursors such as AlH<sub>3</sub>(NMe<sub>3</sub>). ALD film growth experiments using TiCl<sub>4</sub> and AlH<sub>2</sub>(tBuNCH<sub>2</sub>CH<sub>2</sub>NMe<sub>2</sub>) produced titanium carbonitride films with a high growth rate of 1.6-2.0 Å/cycle and resistivities around 600 μΩ·cm within a very wide ALD window of 220-400 °C. Importantly, film growth proceeded via self-limited surface reactions, which is the hallmark of an ALD process. Root mean square surface roughness was only 1.3 % of the film thickness at 300 °C by atomic force microscopy. The films were polycrystalline with low intensity, broad reflections corresponding to the cubic TiN/TiC phase according to grazing incidence X-ray diffraction. Film composition by X-ray photoelectron spectroscopy was approximately TiC<sub>0.8</sub>N<sub>0.5</sub> at 300 °C with small amounts of Al (6 at%), Cl (4 at%) and O (4 at%) impurities. Remarkably, self-limited growth and low Al content was observed in films deposited well above the solid-state thermal decomposition point of AlH<sub>2</sub>(tBuNCH<sub>2</sub>CH<sub>2</sub>NMe<sub>2</sub>), which is ca. 185 °C. Similar growth rates, resistivities, and film compositions were observed in ALD film growth trials using AlH<sub>2</sub>(tBuNCH<sub>2</sub>CH<sub>2</sub>NC<sub>4</sub>H<sub>8</sub>). </p>

Aluminum Dihydride Complexes and their Unexpected Application in Atomic Layer Deposition of Titanium Carbonitride Films

2018 ◽  
Author(s):  
Kyle J. Blakeney ◽  
Philip D. Martin ◽  
Charles H. Winter
Keyword(s):  
Atomic Layer Deposition ◽  
Photoelectron Spectroscopy ◽  
Film Growth ◽  
High Growth ◽  
Atomic Layer ◽  
Grazing Incidence ◽  
High Growth Rate ◽  
Titanium Carbonitride ◽  
X Ray ◽  
Layer Deposition

<p>Aluminum dihydride complexes containing amido-amine ligands were synthesized and evaluated as potential reducing precursors for thermal atomic layer deposition (ALD). Highly volatile monomeric complexes AlH<sub>2</sub>(tBuNCH<sub>2</sub>CH<sub>2</sub>NMe<sub>2</sub>) and AlH<sub>2</sub>(tBuNCH<sub>2</sub>CH<sub>2</sub>NC<sub>4</sub>H<sub>8</sub>) are more thermally stable than common Al hydride thin film precursors such as AlH<sub>3</sub>(NMe<sub>3</sub>). ALD film growth experiments using TiCl<sub>4</sub> and AlH<sub>2</sub>(tBuNCH<sub>2</sub>CH<sub>2</sub>NMe<sub>2</sub>) produced titanium carbonitride films with a high growth rate of 1.6-2.0 Å/cycle and resistivities around 600 μΩ·cm within a very wide ALD window of 220-400 °C. Importantly, film growth proceeded via self-limited surface reactions, which is the hallmark of an ALD process. Root mean square surface roughness was only 1.3 % of the film thickness at 300 °C by atomic force microscopy. The films were polycrystalline with low intensity, broad reflections corresponding to the cubic TiN/TiC phase according to grazing incidence X-ray diffraction. Film composition by X-ray photoelectron spectroscopy was approximately TiC<sub>0.8</sub>N<sub>0.5</sub> at 300 °C with small amounts of Al (6 at%), Cl (4 at%) and O (4 at%) impurities. Remarkably, self-limited growth and low Al content was observed in films deposited well above the solid-state thermal decomposition point of AlH<sub>2</sub>(tBuNCH<sub>2</sub>CH<sub>2</sub>NMe<sub>2</sub>), which is ca. 185 °C. Similar growth rates, resistivities, and film compositions were observed in ALD film growth trials using AlH<sub>2</sub>(tBuNCH<sub>2</sub>CH<sub>2</sub>NC<sub>4</sub>H<sub>8</sub>). </p>

scholarly journals Atomic Layer Deposition of HfO2 Thin Films on Si and GaAs Substrates

2008 ◽  
Vol 1073 ◽  
Author(s):  
Justin C Hackley ◽  
J. Derek Demaree ◽  
Theodosia Gougousi
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Photoelectron Spectroscopy ◽  
Rutherford Backscattering Spectrometry ◽  
Surface Oxidation ◽  
Atomic Layer ◽  
Native Oxide ◽  
Native Oxides ◽  
Gaas Substrates ◽  
Layer Deposition

ABSTRACTThe atomic layer deposition of HfO2 thin films is studied on Si(100) and GaAs(100) surfaces. The films are grown using tetrakis(dimethylamido)hafnium (TDMAH) and H2O precursors at a deposition temperature of 275°C. The Si surfaces used include a H-terminated surface and an OH-rich chemical oxide. GaAs substrates are subjected to two different pre-deposition treatments involving an HF and a NH4OH wet chemical etch that has been shown to remove most of the Ga and As native oxides. Spectroscopic ellipsometry (SE) confirms linear growth rates of 1.05±0.05 Å/cycle for all surfaces. Rutherford backscattering spectrometry (RBS) shows that steady-state growth of 2.6×1014 Hf/cm2/cycle is reached after 10 ALD cycles for the HF-etched GaAs surface. X-ray photoelectron spectroscopy (XPS) indicates the presence of native oxides on both GaAs starting surfaces after 10 cycles due to postdeposition surface oxidation. However, the presence of the native oxide is not detected for thicker 15 and 20 cycle samples indicating passivation of the surface and suppression of the interfacial layer formation.

Atomic Layer Deposition of Chalcogenides for Next-Generation Phase Change Memory

2021 ◽  
Author(s):  
Yoon Kyeung Lee ◽  
Chanyoung Yoo ◽  
Woohyun Kim ◽  
Jeongwoo Jeon ◽  
Cheol Seong Hwang
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Film Growth ◽  
Phase Change Memory ◽  
Film Surface ◽  
Atomic Layer ◽  
Thin Film Growth ◽  
Growth Technique ◽  
Layer Deposition ◽  
Change Memory

Atomic layer deposition (ALD) is a thin film growth technique that uses self-limiting, sequential reactions localized at the growing film surface. It guarantees exceptional conformality on high-aspect-ratio structures and controllability...

scholarly journals Structural and Optical Properties of Luminescent Copper(I) Chloride Thin Films Deposited by Sequentially Pulsed Chemical Vapour Deposition

Coatings ◽  
2018 ◽  
Vol 8 (10) ◽  
pp. 369 ◽  
Author(s):  
Richard Krumpolec ◽  
Tomáš Homola ◽  
David Cameron ◽  
Josef Humlíček ◽  
Ondřej Caha ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Chemical Vapour Deposition ◽  
Photoelectron Spectroscopy ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Atomic Layer ◽  
Nanocrystalline Films ◽  
Zinc Blende ◽  
Layer Deposition

Sequentially pulsed chemical vapour deposition was used to successfully deposit thin nanocrystalline films of copper(I) chloride using an atomic layer deposition system in order to investigate their application to UV optoelectronics. The films were deposited at 125 °C using [Bis(trimethylsilyl)acetylene](hexafluoroacetylacetonato)copper(I) as a Cu precursor and pyridine hydrochloride as a new Cl precursor. The films were analysed by XRD, X-ray photoelectron spectroscopy (XPS), SEM, photoluminescence, and spectroscopic reflectance. Capping layers of aluminium oxide were deposited in situ by ALD (atomic layer deposition) to avoid environmental degradation. The film adopted a polycrystalline zinc blende-structure. The main contaminants were found to be organic materials from the precursor. Photoluminescence showed the characteristic free and bound exciton emissions from CuCl and the characteristic exciton absorption peaks could also be detected by reflectance measurements.

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