The Effect of Substrate Annealing on Epitaxial Growth in Mbe—Grown Silicon on Sapphire.

1988 ◽  
Vol 116 ◽  
Author(s):  
Joseph G. Pellegrino ◽  
Eliezer D. Richmond ◽  
Mark F. Twigg
Keyword(s):  
Growth Rate ◽  
Epitaxial Growth ◽  
Growth Temperature ◽  
Temperature And Growth ◽  
Identical Series ◽  
Substrate Annealing ◽  
Deposition Substrate ◽  
Anneal Time

We have continued our investigation1 of the effects of pre—deposition substrate annealing for the case of MBE grown silicon on sapphire. Three identical series of samples were grown with film thicknesses ranging between 65 and 1500 angstroms. Each series of samples was grown upon sapphire which had been annealed at either 1450ºC, 1300ºC, or 900ºC. The growth temperature and growth rate were the same for each series. The anneal time for each sample was 30 minutes.

The Relationship between Surface Pits Density and Growth Parameters during the Epitaxial Growth of 4H-SiC

2016 ◽  
Vol 858 ◽  
pp. 229-232 ◽  
Author(s):  
Wei Yu Chen ◽  
Han Chieh Ho ◽  
Po Fei Yang ◽  
Liang Choo Hsia
Keyword(s):  
Growth Rate ◽  
Epitaxial Growth ◽  
Growth Temperature ◽  
Growth Parameters ◽  
Lower Surface ◽  
Ratio Condition ◽  
Background Doping ◽  
Good Uniformity ◽  
Temperature And Growth ◽  
The Relationship

In this study, different parameters of 4H-SiC epitaxial growth were used to investigate the influence on surface pits density. It was found that the density of surface pits can be reduced significantly at lower C/Si ratio condition but doping uniformity became worse simultaneously. The background doping was higher than 2E15 cm-3 when C/Si ratio was lower than 1.0. Influences of growth temperature and growth rate are also discussed. The lower surface pits density 4H-SiC epilayer with good uniformity (s/mean below 2%) can be realized during optimal condition.

Epitaxial growth and characterization of cubic GaN on BP/Si(100) substrates

2011 ◽  
Vol 1396 ◽  
Author(s):  
Suzuka Nishimura ◽  
Muneyuki Hirai ◽  
Kazutaka Terashima
Keyword(s):  
Growth Rate ◽  
Epitaxial Growth ◽  
Growth Temperature ◽  
Cubic Gan ◽  
Gan On Si

ABSTRACTWe have focused to grow cubic GaN (c-GaN) on Si(100) substrates using boronmonophosphide (BP) buffer crystals. The growth of GaN was carried out by MOVPE on BP/Si(100) substrate of 2 inches in diameter. By the several evaluations, it was recognized that when the growth temperature is around 750˚C, c-GaN was dominant. The typical growth rate was about 0.5μm/h. We obtained c-GaN layer over 2.5μm thick without cracking.

Homoepitaxial Growth on Si-Face (0001) On-Axis 4H-SiC Substrates

2019 ◽  
Vol 954 ◽  
pp. 31-34
Author(s):  
Guo Guo Yan ◽  
Xing Fang Liu ◽  
Feng Zhang ◽  
Zhan Wei Shen ◽  
Wan Shun Zhao ◽  
...  
Keyword(s):  
Growth Rate ◽  
Surface Morphology ◽  
Epitaxial Growth ◽  
Growth Temperature ◽  
Epitaxial Layers ◽  
Homoepitaxial Growth ◽  
Influence Mechanism

Homoepitaxial growths of 4H-SiC were performed on Si-face (0001) on-axis substrates in a SiH4-C2H4-H2-HCl system by using our home-made vertical hot wall CVD reactor. The influence mechanism of the growth temperature and C/Si ratio on the morphology and growth rate was studied. It is found that the steps in the epilayer become more clear with the increasing temperatures. The result indicates that the C/Si ratio window of on-axis epitaxial growth is very narrow. Only when the C/Si ratio was 1.2, a slightly improved surface morphology can be achieved. The results indicate that 4H-SiC epitaxial layers were obtained on on-axis substrates and the films were highly-oriented 4H-SiC.

Growth temperature and growth rate dependency on reactor pressure for InN epilayers grown by HPCVD

2011 ◽  
Vol 8 (7-8) ◽  
pp. 2059-2062 ◽  
Author(s):  
Max Buegler ◽  
Sampath Gamage ◽  
R. Atalay ◽  
J. Wang ◽  
M. K. I. Senevirathna ◽  
...  
Keyword(s):  
Growth Rate ◽  
Growth Temperature ◽  
Rate Dependency ◽  
Temperature And Growth ◽  
Reactor Pressure

Quality and Growth Rate of Hot-wire Chemical Vapor Deposition Epitaxial Si Layers

2008 ◽  
Vol 1066 ◽  
Author(s):  
Charles W Teplin ◽  
Ina T. Martin ◽  
Kim M. Jones ◽  
David Young ◽  
Manuel J. Romero ◽  
...  
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Growth Phase ◽  
Growth Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Hot Wire ◽  
High Carrier ◽  
Substrate Temperatures

ABSTRACTFast epitaxial growth of several microns thick Si at glass-compatible temperatures by the hot-wire CVD technique is investigated, for film Si photovoltaic and other applications. Growth temperature determines the growth phase (epitaxial or disordered) and affects the growth rate, possibly due to the different hydrogen coverage. Stable epitaxy proceeds robustly in several different growth chemistry regimes at substrate temperatures above 600°C. The resulting films exhibit low defect concentrations and high carrier mobilities.

Epitaxial Growth of 4H-SiС Using Si2(CH3)6+Si2Cl6+C3H8+H2 System by Atmospheric Pressure Hot CVD Method

2012 ◽  
Vol 717-720 ◽  
pp. 97-100
Author(s):  
Hyun Seung Lee ◽  
Min Jae Kim ◽  
Min Hee Kim ◽  
Sang Il Lee ◽  
Won Jae Lee ◽  
...  
Keyword(s):  
Growth Rate ◽  
Epitaxial Growth ◽  
Gas Phase ◽  
Growth Temperature ◽  
Atmospheric Pressure ◽  
High Growth ◽  
High Growth Rate ◽  
High Quality ◽  
Cvd Method

The chlorinated precursor is recently focused for high growth rate and high quality epitaxial layer. In the previous studies, the addition of chlorinated species from Si2Cl6 in the gas phase eliminated simultaneous Si nucleation which interferes with epitaxy. In this work, the characterization of epitaxial layers grown with chlorinated species is focused. High growth rate of 30 μm/h was achieved by using Si2(CH3)6 and Si2Cl6 as chlorinated precursors. We concluded that high growth rate was achieved by using HMDS and HCDS as the precursor of SiC at growth temperature of 1600 °C.

Influence of growth temperature and growth rate of p-GaN layers on the characteristics of green light emitting diodes

2006 ◽  
Vol 35 (4) ◽  
pp. 587-591 ◽  
Author(s):  
Wonseok Lee ◽  
Jae Limb ◽  
Jae-Hyun Ryou ◽  
Dongwon Yoo ◽  
Theodore Chung ◽  
...  
Keyword(s):  
Growth Rate ◽  
Growth Temperature ◽  
Light Emitting Diodes ◽  
Green Light ◽  
Light Emitting ◽  
Temperature And Growth
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