scholarly journals Atomically resolved surface phases of La0.8Sr0.2MnO3(110) thin films

2020 ◽  
Vol 8 (43) ◽  
pp. 22947-22961
Author(s):  
Giada Franceschi ◽  
Michael Schmid ◽  
Ulrike Diebold ◽  
Michele Riva
Keyword(s):  
Thin Films ◽  
Atomic Scale ◽  
Lanthanum Strontium Manganite ◽  
Near Surface ◽  
Lanthanum Strontium ◽  
Surface Phases ◽  
First Time

The atomic-scale details of several surface phases of lanthanum–strontium manganite (La1−xSrxMnO3−δ, LSMO) with different near-surface cation stoichiometry are unveiled and systematically investigated for the first time.

Structural Properties of Chalcopyrite-related 1:3:5 Copper-poor Compounds and their Influence on Thin-film Devices

2009 ◽  
Vol 1165 ◽  
Author(s):  
Sebastian Lehmann ◽  
David Fuertes Marrón ◽  
José Manuel Merino Álvarez ◽  
Maximo Léon ◽  
Michael Tovar ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solid Solution ◽  
Structural Model ◽  
Tetragonal Distortion ◽  
Solid Solution Series ◽  
Surface Phase ◽  
Near Surface ◽  
Surface Phases ◽  
Gallium Content

AbstractChalcopyrite-based devices show highest conversion efficiencies among present thin film architectures with values of 20% at laboratory scale. This outstanding performance has been achieved for quaternary Cu(Inx,Ga1-x)Se2 (x˜0.7) compound material. However, a strong correlation between the performance and the gallium content or, in other words, low versus high bandgap materials has been recognized. One critical issue in this discussion is the formation of a copper-depleted near-surface phase with 1:3:5 and 1:5:8 stoichiometries. In earlier reports, surface phases with corresponding compositions have been found on CuInSe2, CuGaSe2 and Cu(Inx,Ga1-x)Se2 thin films. These near-surface phases show a positive influence on the performance of cells based on low bandgap Cu(Inx,Ga1-x)Se2 material due to n-type inversion and band gap widening compared to bulk properties. A tendency towards a neutral or even a negative impact of the near-surface phase on wide band gap material (high gallium content) has recently been reported [1]. Nevertheless, the structural models of copper-poor chalcopyrite-related compounds have been controversially discussed in literature but a stannite-type structural model is most suitable as will be presented. In any case, the relation of the structural properties between chalcopyrite and 1:3:5 phases is crucial for the performance of related devices.In this contribution we will report about the structural analysis of the Cu(Inx,Ga1-x)3Se5 solid solution series by means of anomalous x-ray scattering using synchrotron radiation, powder and single crystal neutron diffraction. Contributions of the isoelectronic species Cu+ and Ga3+ could be separated by these experiments. Bulk samples synthesized from the elements and heat treated at 650°C after the main reaction step - the latter in order to allow equilibrium structure formation - were investigated. Structural data like lattice parameters, tetragonal distortion and cation distribution were obtained for the complete Cu(Inx,Ga1-x)3Se5 solid solution series. The stannite-type structural model was assigned to all members of the investigated 1:3:5s which will be strengthened by simulations. We observed that the tetragonal distortion vanishes for compositions close to a gallium content as used for highest efficiency Cu(Inx,Ga1-x)Se2 devices. However, the tetragonal distortion depends critically on the cation distribution which is in turn controlled by the thermal history of the sample, as we have recently reported for pure CuGaSe2 [1]. This means that we can plot a direct correlation for the misfit between chalcopyrite and 1:3:5 phases depending on the gallium content and the thermal treatment of the considered thin films. These results will widen the understanding of the chalcopyrite-based thin film photovoltaic devices.[1] S. Lehmann et al., Phys. Stat. Sol. A (in press)

Nanocomposite lanthanum strontium manganite thin films formed by using a chemical solution deposition

2012 ◽  
Vol 100 (2) ◽  
pp. 023103 ◽  
Author(s):  
C. Moreno ◽  
P. Abellán ◽  
F. Sandiumenge ◽  
M.-J. Casanove ◽  
X. Obradors
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Chemical Solution ◽  
Lanthanum Strontium Manganite ◽  
Solution Deposition ◽  
Lanthanum Strontium

Soft X‐Ray Studies of Y‐Ba‐Cu‐O Thin Films Prepared by Laser Ablation

1989 ◽  
Vol 169 ◽  
Author(s):  
A. Krol ◽  
C.J. Sher ◽  
D.R. Storch ◽  
L.W. Song ◽  
Y.H. Kao ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Parallel Plate ◽  
Surface Region ◽  
Angular Variation ◽  
Near Surface ◽  
X Ray ◽  
20 Nm ◽  
First Time ◽  
Oxygen Atoms

AbstractAngular variation of x‐ray fluorescence due to oxygen atoms in high‐T Y‐Ba‐Cu‐O thin films is measured for the first time by using a new parallel plate avalanche chamber. This technique allows the possibility of nondestructive probing of the depth‐profile of oxygen atoms in the superconducting materials. Our preliminary results indicate that the near surface region of the Y‐Ba‐Cu‐O film may contain an oxygen‐depleted layer of thickness around 20 nm.

Electron Microscopy Studies of The Chemistry And Microstructure of BaF2 / YBa2Cu3O7-x Thin Films

1994 ◽  
Vol 52 ◽  
pp. 796-797
Author(s):  
J. L. Lee ◽  
C. A. Weiss ◽  
R. A. Buhrman ◽  
J. Silcox
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Transmission Electron Microscope ◽  
Atomic Scale ◽  
Island Growth ◽  
Multilayer Systems ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Mgo Substrate

BaF2 thin films are being investigated as candidates for use in YBa2Cu3O7-x (YBCO) / BaF2 thin film multilayer systems, given the favorable dielectric properties of BaF2. In this study, the microstructural and chemical compatibility of BaF2 thin films with YBCO thin films is examined using transmission electron microscopy and microanalysis. The specimen was prepared by using laser ablation to first deposit an approximately 2500 Å thick (0 0 1) YBCO thin film onto a (0 0 1) MgO substrate. An approximately 7500 Å thick (0 0 1) BaF2 thin film was subsequendy thermally evaporated onto the YBCO film.Images from a VG HB501A UHV scanning transmission electron microscope (STEM) operating at 100 kV show that the thickness of the BaF2 film is rather uniform, with the BaF2/YBCO interface being quite flat. Relatively few intrinsic defects, such as hillocks and depressions, were evident in the BaF2 film. Moreover, the hillocks and depressions appear to be faceted along {111} planes, suggesting that the surface is smooth and well-ordered on an atomic scale and that an island growth mechanism is involved in the evolution of the BaF2 film.

scholarly journals A novel and potentially scalable CVD-based route towards SnO2:Mo thin films as transparent conducting oxides

2021 ◽  
Author(s):  
Tianlei Ma ◽  
Marek Nikiel ◽  
Andrew G. Thomas ◽  
Mohamed Missous ◽  
David J. Lewis
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Mixed Valence ◽  
Chemical Vapour ◽  
X Ray Diffraction ◽  
X Ray ◽  
Conducting Oxides ◽  
Valence States ◽  
3 Omega ◽  
First Time

AbstractIn this report, we prepared transparent and conducting undoped and molybdenum-doped tin oxide (Mo–SnO2) thin films by aerosol-assisted chemical vapour deposition (AACVD). The relationship between the precursor concentration in the feed and in the resulting films was studied by energy-dispersive X-ray spectroscopy, suggesting that the efficiency of doping is quantitative and that this method could potentially impart exquisite control over dopant levels. All SnO2 films were in tetragonal structure as confirmed by powder X-ray diffraction measurements. X-ray photoelectron spectroscopy characterisation indicated for the first time that Mo ions were in mixed valence states of Mo(VI) and Mo(V) on the surface. Incorporation of Mo6+ resulted in the lowest resistivity of $$7.3 \times 10^{{ - 3}} \Omega \,{\text{cm}}$$ 7.3 × 10 - 3 Ω cm , compared to pure SnO2 films with resistivities of $$4.3\left( 0 \right) \times 10^{{ - 2}} \Omega \,{\text{cm}}$$ 4.3 0 × 10 - 2 Ω cm . Meanwhile, a high transmittance of 83% in the visible light range was also acquired. This work presents a comprehensive investigation into impact of Mo doping on SnO2 films synthesised by AACVD for the first time and establishes the potential for scalable deposition of SnO2:Mo thin films in TCO manufacturing. Graphical abstract

scholarly journals Reactive Dual Magnetron Sputtering: A Fast Method for Preparing Stoichiometric Microcrystalline ZnWO4 Thin Films

Surfaces ◽  
2021 ◽  
Vol 4 (2) ◽  
pp. 106-114
Author(s):  
Yannick Hermans ◽  
Faraz Mehmood ◽  
Kerstin Lakus-Wollny ◽  
Jan P. Hofmann ◽  
Thomas Mayer ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Fast Method ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Post Annealing ◽  
Rf Signal ◽  
First Time

Thin films of ZnWO4, a promising photocatalytic and scintillator material, were deposited for the first time using a reactive dual magnetron sputtering procedure. A ZnO target was operated using an RF signal, and a W target was operated using a DC signal. The power on the ZnO target was changed so that it would match the sputtering rate of the W target operated at 25 W. The effects of the process parameters were characterized using optical spectroscopy, X-ray diffraction, and scanning electron microscopy, including energy dispersive X-ray spectroscopy as well as X-ray photoelectron spectroscopy. It was found that stoichiometric microcrystalline ZnWO4 thin films could be obtained, by operating the ZnO target during the sputtering procedure at a power of 55 W and by post-annealing the resulting thin films for at least 10 h at 600 °C. As FTO coated glass substrates were used, annealing led as well to the incorporation of Na, resulting in n+ doped ZnWO4 thin films.

scholarly journals Revealing noncollinear magnetic ordering at the atomic scale via XMCD

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Fridtjof Kielgast ◽  
Ivan Baev ◽  
Torben Beeck ◽  
Federico Pressacco ◽  
Michael Martins
Keyword(s):  
Ground State ◽  
Magnetic Circular Dichroism ◽  
Magnetic Moments ◽  
Magnetic Ordering ◽  
Atomic Scale ◽  
Angle Of Incidence ◽  
X Ray ◽  
First Time ◽  
X Ray Absorption ◽  
Magnetic Sublattices

AbstractMass-selected V and Fe monomers, as well as the heterodimer $${\text{Fe}}_1{\text{V}}_1$$ Fe 1 V 1 , were deposited on a Cu(001) surface. Their electronic and magnetic properties were investigated via X-ray absorption (XAS) and X-ray magnetic circular dichroism (XMCD) spectroscopy. Anisotropies in the magnetic moments of the deposited species could be examined by means of angle resolving XMCD, i.e. changing the X-ray angle of incidence. A weak adatom-substrate-coupling was found for both elements and, using group theoretical arguments, the ground state symmetries of the adatoms were determined. For the dimer, a switching from antiparallel to parallel orientation of the respective magnetic moments was observed. We show that this is due to the existence of a noncollinear spin-flop phase in the deposited dimers, which could be observed for the first time in such a small system. Making use of the two magnetic sublattices model, we were able to find the relative orientations for the dimer magnetic moments for different incidence angles.

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