Investigation of the Pb Depletion in Single and Dual Pulsed Laser Deposited Epitaxial PZT Thin Films and Their Structural Characterization

2009 ◽  
Vol 1199 ◽  
Author(s):  
Devajyoti Mukherjee ◽  
Robert H Hyde ◽  
Tara Dhakal ◽  
Hariharan Srikanth ◽  
Pritish Mukherjee ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Fluence ◽  
Pulsed Laser ◽  
Pulsed Lasers ◽  
Pzt Thin Films ◽  
Single Laser ◽  
Pzt Films ◽  
Plasma Plumes ◽  
Deposited Films ◽  
Dual Laser

AbstractWe have investigated the Pb depletion in laser ablated PZT (PbZr0.52Ti0.48O3) films through a systematic study of PZT target-laser interactions for both single laser and dual-laser ablation methods. The study includes films deposited from a stoichiometric and an excess PbO PZT targets. The films were deposited on single crystal SrTiO3[100] substrates at 550˚C with a background oxygen pressure of 500 mT. Single laser deposited films at a laser fluence of 5J/cm2 produced the highest Pb content while dual-laser ablated films where an excimer and a CO2 pulsed lasers were synchronized for ablation produced high Pb content for an excimer laser fluence of less than 2J/cm2. This enabled the growth of particulate-free PZT films with high Pb content. ICCD imaging of the plasma plumes showed variations in the expansion profiles at different laser fluencies that correlated well with the Pb content observed in the deposited films.

Growth of Ferroelectric PbZrxTi1-xO3 (PZT) Thin Films by Liquid-Delivery Metalorganic Chemical Vapor Deposition

2005 ◽  
Vol 902 ◽  
Author(s):  
Serhiy Matichyn ◽  
Marco Lisker ◽  
Edmund P. Burte
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Main Role ◽  
Pzt Thin Films ◽  
X Ray ◽  
Pzt Films ◽  
Deposited Films

AbstractIn this study lead zirkonat titanate (PZT) thin films were deposited using direct liquid injection metal organic chemical vapor deposition (DLI-MOCVD).The chemical states and the stoichiometry of PZT-films were characterized using X-ray photoelectron spectroscopy (XPS). The crystal structure of the films was investigated by X-ray diffraction (XRD).The surface composition of the films was Pb : Zr : Ti = 1.05 : 0.52 : 0.48, which indicates that the deposited films had a stoichiometric PZT composition. 130 nm thick PZT films deposited on Ir showed <110> preferred orientation.The main role for formation of the perovsktive PZT films plays the content of the lead in the deposited films. Lead deficiency causes the formation of the pyrochlore phase with poor electrical properties. In films with a significant excess of lead a second PbO phase appeared that can be observed even with naked eyes. Negligible excess of lead can be reduced by post-deposition annealing at 500-600 °C.The Ir/PZT/Ir capacitor showed large values of the remanent polarisation of about 60μC/cm2 at an applied voltage of 3 V. So high value of the remanent polarisation can be induced by structural stress in the films. After ten switch impulses the values of the remanent polarisation have significantly decreased. This is probably due to a relaxation of crystal cells.

Structure and Electrical Properties of Pulsed Laser Deposited Amorphous Carbon Nitride Thin Films

2002 ◽  
Vol 750 ◽  
Author(s):  
Yoshifumi Aoi ◽  
Kojiro Ono ◽  
Kunio Sakurada ◽  
Eiji Kamijo
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Electrical Properties ◽  
Photoelectron Spectroscopy ◽  
Pulsed Laser ◽  
Film Surface ◽  
Input Power ◽  
Localized States ◽  
Active Nitrogen ◽  
Deposited Films

ABSTRACTAmorphous CNx thin films were deposited by pulsed laser deposition (PLD) combined with a nitrogen rf radical beam source which supplies active nitrogen species to the growing film surface. The deposited films were characterized by X-ray photoelectron spectroscopy (XPS), Raman scattering, and Fourier transform infrared (FTIR) spectroscopy. Nitrogen content of the deposited films increased with increasing rf input power and N2 pressure in the PLD chamber. The maximum N/C ratio 0.23 was obtained at 400 W of rf input power and 1.3 Pa. XPS N 1s spectra shows the existence of several bonding structures in the deposited films. Electrical properties of the deposited films were investigated. The electrical conductivity decreased with increasing N/C atomic ratio. Temperature dependence of electrical conductivity measurements indicated that electronic conduction occurred by variable-range hopping between p electron localized states.

Post-Processing of Pulsed Laser-Deposited Pzt Thin Films

1991 ◽  
Vol 243 ◽  
Author(s):  
C. K. Chiang ◽  
W. Wong-Ng ◽  
L. P. Cook ◽  
P. K. Schenck ◽  
H. M. Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Amorphous Material ◽  
Ferroelectric Properties ◽  
Pulsed Laser ◽  
Linear Shrinkage ◽  
Laser Deposition ◽  
Amorphous Films ◽  
Pzt Thin Films ◽  
Si Substrates ◽  
Pzt Thin Film

AbstractPZT thin films were prepared by pulsed laser deposition on unheated Ptcoated Si substrates. As deposited, the films were amorphous. Films crystallized at 550 - 600 °C to produce predominantly crystalline ferroelectric PZT. Crystallization of the amorphous material was accompanied by a linear shrinkage of ∼2 %, as manifested in development of cracks in the film. Spacing, width and morphology of larger cracks followed a regular progression with decreasing film thickness. For film thicknesses less than 500 runm, much of the shrinkage was taken up by small, closely-spaced cracks of local extent. Implications for measurement of PZT thin film ferroelectric properties and processing are discussed.

Electrooptic Properties of Pzt thin Films for Image Storage Applications

1991 ◽  
Vol 243 ◽  
Author(s):  
D. Dimos ◽  
R.W. Schwartz
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Ferroelectric Films ◽  
Image Storage ◽  
Pzt Thin Films ◽  
Hysteresis Behavior ◽  
Pzt Films ◽  
Induced Changes

AbstractThe photocurrent responses, photo-induced changes in hysteresis behavior, and electrooptic (birefringence) effects of sol-gel derived PZT films have been characterized as part of an effort to evaluate ferroelectric films for image storage and processing applications.

Preparation of PbZrxTi1−xO3 Thin Films by KrF Excimer Laser Ablation Technique

1996 ◽  
Vol 433 ◽  
Author(s):  
Hiromitsu Kurogi ◽  
Yukihiko Yamagata ◽  
Tomoaki Ikegami ◽  
Kenji Ebihara ◽  
Bok Yin Tong
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Excimer Laser ◽  
Oxygen Pressure ◽  
Ferroelectric Properties ◽  
Pzt Thin Films ◽  
Excimer Laser Ablation ◽  
Pzt Films ◽  
Krf Excimer Laser ◽  
Laser Ablation Technique

AbstractPb(ZrxTi1−x)O3(PZT) thin films have excellent ferroelectric, optical, piezoelectric and pyroelectric properties. We prepared PZT thin films using the excimer laser ablation technique. A pulsed KrF excimer laser was used to ablate PZT bulk targets. We have studied optimum preparation conditions such as an oxygen pressure, a laser energy fluence and a substrate temperature.In this paper, we investigated the composition, crystallization and ferroelectric properties of the PZT films prepared under various deposition conditions.The X-ray diffraction (XRD) patterns showed that the PZT films prepared on MgO(100) substrates at 600°C and with a laser fluence of 2J/cm2 had a perovskite - pyrochlore mixed structure. The condition of 100 mTorr oxygen pressure provided high quality perovskite films. It is found that the stoichiometric composition of the deposited films is obtained in ambient oxygen of 100˜400 mTorr. The ferroelectric properties of the Pt/PZT/Pt/MgO structure were studied. The capacitance-voltage characteristics and the corresponding hysteresis loop of the dielectric-electric field curve were discussed.We also studied optical emission of the PZT plasma plume to understand quantitative relation between the PZT film quality and the ablation plume plasma. We identified spectral lines originated in Pb, Pb+, Zr, Zr+, Ti, Ti+, PbO and TiO. These spectral intensities have remarkable dependence on the ambient O2 pressure.

Influence of the laser fluence on the electrical properties of pulsed-laser-deposited SrBi2Ta2O9 thin films

1999 ◽  
Vol 75 (8) ◽  
pp. 1155-1157 ◽  
Author(s):  
S. D. Bu ◽  
B. H. Park ◽  
B. S. Kang ◽  
S. H. Kang ◽  
T. W. Noh ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Laser Fluence ◽  
Pulsed Laser

Modeling of Film Growth in Pulsed Laser Deposition

1995 ◽  
Vol 397 ◽  
Author(s):  
M. Tyunin
Keyword(s):  
Growth Rate ◽  
Pulsed Laser Deposition ◽  
Laser Fluence ◽  
Film Growth ◽  
Surface Film ◽  
Substrate Surface ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Ambient Gas ◽  
Deposited Films

ABSTRACTFilm growth in pulsed laser deposition (PLD) is described as a process of sorption of ablated species on the substrate surface. Film growth rate and composition are qualitatively analyzed as a function of laser fluence and ambient gas pressure. As an example, analysis of the film composition is carried out for BiSrCaCuO and PbZrTiO pulsed laser deposited films.

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