Electrical Activation of Heavily Doped Arsenic Implanted Silicon

1988 ◽  
Vol 128 ◽  
Author(s):  
J. Said ◽  
H. Jaouen ◽  
G. Ghibaudo ◽  
I. Stoemenos ◽  
P. Zaumseil
Keyword(s):  
Solid Phase ◽  
Electrical Activation ◽  
Activation Process ◽  
Solid Phase Epitaxy ◽  
X Ray Diffraction ◽  
Electrical Transmission ◽  
X Ray ◽  
Defect Migration ◽  
Transmission Electron ◽  
Heavily Doped

ABSTRACTThe combination of electrical, Transmission Electron Microscopy and Triple Crystal X-ray Diffraction measurements allow us to separate the existence of a local impurity activation process from the amorphous- crystal transformation. The local process occurs in the highly damaged surface layer induced by the arsenic implantation and is efficient well below the Solid Phase Epitaxy transition temperature. It is suggested that point defect migration should play an important role in the electrical impurity activation at low annealing temperatures.

Evolution of Epitaxial SixGei1-x Alloys on Si(100) During Thermal Annealing a-Ge/Au Bilayers Deposited on Si Substrate

1992 ◽  
Vol 280 ◽  
Author(s):  
Z. Ma ◽  
L. H. Allen
Keyword(s):  
Single Crystal ◽  
Thermal Annealing ◽  
Rutherford Backscattering Spectrometry ◽  
Solid Phase ◽  
Growth Dynamics ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron

ABSTRACTSolid phase epitaxial (SPE) growth of SixGei1-x alloys on Si (100) was achieved by thermal annealing a-Ge/Au bilayers deposited on single crystal Si substrate in the temperature range of 280°C to 310°C. Growth dynamics was investigated using X-ray diffraction, Rutherford backscattering spectrometry, and cross-sectional transmission electron microscopy. Upon annealing, Ge atoms migrate along the grain boundaries of polycrystalline Au and the epitaxial growth initiates at localized triple points between two Au grains and Si substrate, simultaneously incorporating a small amount of Si dissolved in Au. The Au is gradually displaced into the top Ge layer. Individual single crystal SixGei1-x islands then grow laterally as well as vertically. Finally, the islands coalesce to form a uniform layer of epitaxial SixGe1-x alloy on the Si substrate. The amount of Si incorporated in the final epitaxial film was found to be dependent upon the annealing temperature.

Preparation of Exfoliated Polyethylene/Clay Nanocomposites at High Clay Content

2010 ◽  
Vol 150-151 ◽  
pp. 561-564
Author(s):  
Hao Qun Hong ◽  
Hai Yan Zhang ◽  
Hui He ◽  
De Min Jia
Keyword(s):  
Solid Phase ◽  
Clay Content ◽  
Layered Silicates ◽  
Clay Nanocomposites ◽  
Melt Blending ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Diffraction Patterns ◽  
High Polarity

The polyethylene/montmorillonite (PE/MMT) nanocomposites were prepared by melt blending the organic MMT with the ternary-monomer graft copolymers of polyethylene (GPE) which were prepared by solid phase grafting maleic anhydride, methyl methacrylate and butyl acrylate onto PE. Fourier transform infrared spectroscopy was used to characterize the structure of GPE. X-ray diffraction patterns and transmission electron microscopy were used to characterize the morphology of GPE/MMT nanocomposites. Results showed that GPE was an outstanding polymeric material to prepare an exfoliated polymer/layered silicates nanocomposites due to the high polarity of GPE and high graft degree. Most layered silicates still maintain the exfoliated and well dispersed state even at 40 phr OMMT content. The exfoliation of layered silicates was attributed to the well intercalation and easy wetting of the grafted oligomers.

Fabrication of heteroepitaxial thin films of layered oxychalcogenides LnCuOCh (Ln = La–Nd; Ch = S–Te) by reactive solid-phase epitaxy

2004 ◽  
Vol 19 (7) ◽  
pp. 2137-2143 ◽  
Author(s):  
Hidenori Hiramatsu ◽  
Kazushige Ueda ◽  
Kouhei Takafuji ◽  
Hiromichi Ohta ◽  
Masahiro Hirano ◽  
...  
Keyword(s):  
Thin Films ◽  
Solid Phase ◽  
Epitaxial Films ◽  
Annealing Process ◽  
Epitaxial Thin Films ◽  
Solid Phase Epitaxy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Preparation Conditions ◽  
Thermal Annealing Process

Processes and preparation conditions for growing epitaxial thin films of Cu-based, layered oxychalcogenides LnCuOCh (Ln = La, Ce, Pr or Nd; Ch = S1-xSex or Se1-yTey) are reported. Epitaxial thin films on MgO (001) substrates were prepared by a reactive solid-phase epitaxy method. Four-axes high-resolution x-ray diffraction measurements revealed that the crystallographic orientation is (001)[110] LnCuOCh || (001)[110] MgO and the internal stress of the crystalline lattices in the films are relaxed during thermal-annealing process of the reactive solid-phase epitaxy. Furthermore, except for CeCuOS, systematic variations in the lattice constant by chalcogen or lanthanide ion substitutions were observed. These results demonstrated that the reactive solid-phase epitaxy is an efficient technique for fabricating LnCuOCh epitaxial films.

Heteroepitaxial Bi2Sr2CaCu2Ox Superconducting thin films Deposited on LaA1O3 by Solid Phase Epitaxy and OMCVD

1992 ◽  
Vol 275 ◽  
Author(s):  
J. Chen ◽  
H. A. Lu ◽  
F. DiMeo ◽  
B. W. Wessels ◽  
D. L. Schulz ◽  
...  
Keyword(s):  
Thin Films ◽  
Solid Phase ◽  
Chemical Vapor ◽  
Superconducting Thin Films ◽  
Epitaxial Thin Films ◽  
Solid Phase Epitaxy ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Film Substrate

ABSTRACT-Heteroepitaxial superconducting Bi,Sr2CaCu2Ox (BSCCO 2212) thin films have been formed by solid phase epitaxy from amorphous films deposited on (100) LaA1O3 single crystal substrates by organometallic chemical vapor deposition. The epitaxial structure of the film is confirmed by x-ray diffraction including θ/2θ and Φ (in plane rotation) scans. Cross-sectional high resolution transmission electron microscopy indicates that the film-substrate interface is nearly atomically abrupt. Improvements in superconducting properties of the epitaxial thin films are noted in comparison to highly textured films deposited on MgO.

Synthesis of Dislocation Free Siy(SnxC1−x)1−y Alloys by Molecular Beam Deposition and Solid Phase Epitaxy

1993 ◽  
Vol 298 ◽  
Author(s):  
Gang He ◽  
Mark D. Savellano ◽  
Harry A. Atwater
Keyword(s):  
Molecular Beam ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
X Ray Diffraction ◽  
Time Resolved ◽  
Pure Silicon ◽  
Ion Channeling ◽  
Transmission Electron ◽  
Molecular Beam Deposition ◽  
Beam Deposition

AbstractSynthesis of strain-compensated single-crystal Siy(SnxC1-x)1-y alloy films on silicon (100) substrates has been achieved with compositions of tin and carbon greatly exceeding their normal equilibrium solubility in silicon. Amorphous SiSnC alloys were deposited by molecular beam deposition from solid sources followed by thermal annealing. In situ monitoring of crystallization was done using time-resolved reflectivity. Good solid phase epitaxy was observed for Si0.98Sn0.01C0.01, at a rate about 20 times slower than that of pure silicon. Compositional and structural analysis was done using Rutherford backscattering, electron microprobe, ion channeling, x-ray diffraction, and transmission electron microscopy.

Transmission Electron Microscopy and X-Ray Diffraction Analysis of Aluminum-Induced Crystallization of Amorphous Silicon in α-Si:H/Al and Al/α-Si:H Structures

2005 ◽  
Vol 11 (2) ◽  
pp. 133-137 ◽  
Author(s):  
Ram Kishore ◽  
C. Hotz ◽  
H.A. Naseem ◽  
W.D. Brown
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Amorphous Silicon ◽  
Solid Phase ◽  
High Vacuum ◽  
Radiative Heating ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Xrd Studies

Solid phase crystallization of plasma-enhanced chemical-vapor-deposited (PECVD) amorphous silicon (α-Si:H) in α-Si:H/Al and Al/α-Si:H structures has been investigated using transmission electron microscopy (TEM) and X-ray diffraction (XRD). Radiative heating has been used to anneal films deposited on carbon-coated nickel (Ni) grids at temperatures between 200 and 400°C for TEM studies. α-Si:H films were deposited on c-Si substrates using high vacuum (HV) PECVD for the XRD studies. TEM studies show that crystallization of α-Si:H occurs at 200°C when Al film is deposited on top of the α-Si:H film. Similar behavior was observed in the XRD studies. In the case of α-Si:H deposited on top of Al films, the crystallization could not be observed at 400°C by TEM and even up to 500°C as seen by XRD.

Synthesis and Microwave-Absorbing Properties of Ni-Carbon Sphere Composites

2011 ◽  
Vol 399-401 ◽  
pp. 552-555 ◽  
Author(s):  
Yuan Guang Zhang ◽  
Hong Yu Xia ◽  
Ying Guo Zhao
Keyword(s):  
Electron Microscopy ◽  
Solid Phase ◽  
Energy Dispersive Spectrometer ◽  
Synthetic Approach ◽  
Carbon Sphere ◽  
X Ray Diffraction ◽  
X Ray ◽  
Microwave Absorbing Properties ◽  
Transmission Electron ◽  
Microwave Absorbing

A simple solid-phase synthetic approach has been exploited for the preparation of Ni-carbon sphere composites using Ni(CH3COO)2•4H2O as nickel source, and vitamin C (L-ascorbic acid) as reductant and carbon source at 500oC for 6 h. The products were characterized by X-ray diffraction analysis (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray energy dispersive spectrometer (EDS), raman spectroscopy and microwave-absorbing measurement. The results show that the products are composed of Ni-carbon sphere particles with average diameters of 1.2 µm. Each sphere particle contains embedded Ni particles with average diameters of 83 nm. The reflection loss (RL) values of the products are lower −10 dB at 2–18 GHz, displaying broad range of microwave absorption. Their minimum RL value is about −33 dB at 4.2 GHz, which exhibit good microwave absorbing properties.

Formation and Relaxation of Ni(Au) Disilicide

1995 ◽  
Vol 402 ◽  
Author(s):  
D. Mangelinck ◽  
P. Ga ◽  
J. M. Gay ◽  
B. Pichaud
Keyword(s):  
Rutherford Backscattering Spectrometry ◽  
Solid Phase ◽  
Lattice Parameters ◽  
Solid State Reactions ◽  
Solid Phase Epitaxy ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
X Ray ◽  
Au Clusters ◽  
Relaxation Modes

AbstractThe formation and the relaxation of NiSi2 films with and without Au are examined by scanning electron microscopy, X-ray diffraction and Rutherford backscattering spectrometry. We studied the solid state reactions between a Ni(7 at.% Au) thin film and a Si substrate which occurs during the solid phase epitaxy before the formation of NiSi2. We show that the addition of Au to the Ni film drastically affects the silicides formation: Ni2Si and NiSi appear simultaneously and the nucleation temperature of NiSi 2 is lowered. The solubility of Au in the three silicides is limited which induces a precipitation of Au. Depending on temperature this precipitation takes various forms: Au enriched surface layer or Au clusters at inner interfaces. The films lattice parameters both parallel and perpendicular to the interface are also measured and compared to the lattice parameters of bulk samples which have been made by solidification from the melt. The relaxation modes are deduced from these measurements.

Growth of AlBN Solid Solution by OMVPE

1996 ◽  
Vol 449 ◽  
Author(s):  
M. Shin ◽  
A. Y. Polyakov ◽  
W. Qian ◽  
M. Skowronski ◽  
D. W. Greve ◽  
...  
Keyword(s):  
Single Phase ◽  
Solid Phase ◽  
Columnar Structure ◽  
Lateral Growth ◽  
Organometallic Vapor Phase Epitaxy ◽  
X Ray Diffraction ◽  
Rich Phase ◽  
X Ray ◽  
Thermal Growth ◽  
Transmission Electron

ABSTRACTLayers of AIBN were grown on sapphire by organometallic vapor phase epitaxy (OMVPE) at 1050°C using triethylboron (TEB), trimethylaluminum (TMA) and ammonia as precursors. Boron is readily incorporated into the layers and its concentration in the solid phase can be made fairly high, up to at least 40%. However, single phase AIxB1–xN films can only be grown for compositions not exceeding x=0.01. For higher B concentrations a second B-rich phase is formed. This phase is shown to be most probably wurtzite BN based on the results of transmission electron microscopy and x-ray diffraction. The growth of this phase occurs within the framework of wurtzite AIN islands providing the sites for lateral growth of wurtzite BN. This leads to formation of columnar structure of AIN and BN crystallites oriented in the basal plane and existing side by side. This is one of the first observation of purely thermal growth of sp3 bonded BN.

Green Zn3Al2Ge2O10: Mn2+ Phosphors: Solid-Phase Synthesis, Structure, and Luminescent Properties

2019 ◽  
Vol 74 (12) ◽  
pp. 1109-1113
Author(s):  
Wenlin Feng ◽  
Xiaozhan Yang ◽  
Jin Peng ◽  
Yike Zhang ◽  
Weiqiang Chen
Keyword(s):  
Solid Phase ◽  
Green Emission ◽  
Luminescent Properties ◽  
Energy Dispersive Spectrum ◽  
Dark Field ◽  
Spectroscopic Techniques ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Annular Dark Field

AbstractNovel green phosphors Zn3Al2Ge2O10: Mn2+ were successfully synthesised at high temperature under weak reducing atmosphere. X-ray diffraction results indicate that the samples have like-spinel structure. The morphology, chemical states, and the composition of the dopants in the host were analysed with high-resolution transmission electron microscopy, energy dispersive spectrum, high-angle annular dark-field, and X-ray photoelectron spectroscopic techniques. The photoluminescence spectra show that the emission peak is at 537 nm (under excitation at λex = 334 nm), which is the strong green emission resulting from the 4T1 (4G)-6A1 (6S) transition of Mn2+ ion. The full width at half maximum broadband of the strongest broad emission is about 50 nm. The Zn3Al2Ge2O10 doped with 4 mol% Mn2+ appears to have the highest emission intensity after thermal treatment at 1250 °C for 5 h. The CIE coordinates are x = 0.279, y = 0.625, corresponding to green region, and the decay time is 4.88 μs. The results indicate that the phosphors may be used as a trichromatic fluorescent material.

Sign in / Sign up

Export Citation Format

Share Document