Temperature Dependence of Etch Rate and Residual Damage in Reactively Ion Etched GaAs and AlGaAs

1988 ◽  
Vol 129 ◽  
Author(s):  
S. J. Pearton ◽  
K. S. Jones ◽  
U. K. Chakabarti ◽  
B. Emerson ◽  
E. Lane ◽  
...  
Keyword(s):  
Thermal Degradation ◽  
Surface Morphology ◽  
Temperature Dependence ◽  
Etch Rate ◽  
Schottky Diodes ◽  
Surface Region ◽  
Ion Etching ◽  
Near Surface ◽  
Temperature Range ◽  
Residual Damage

ABSTRACTThe etch rate of GaAs and AIGaAs during CC12F2:O2 reactive ion etching was measured over the temperature range 50–400ºC. For GaAs, the etch rate increases super-linearly from ∼400Å.min−1 to ∼3000Åmin−1 over this temperature range for a 0.56 W.cm−2, 4 mTorr discharge with a 19:1 CC12F2:O2 mixture. The surface morphology of GaAs undergoes a smooth-to-rough transition near 150ºC, and theresidual damage in the near-surface region appears to decrease with increasing etch temperature. The I-V characteristics of Schottky diodes fabricated on the etched surfaces show ideality factors of 1.001 for 150ºC RIE, although these worsen because of thermal degradation of higher etching temperatures. From AES and XPS data the etched GaAs shows little contamination after etching. In contrast, little temperature dependence of the etch rate of AIGaAs is observed using CC12F2:O2, although once again there is surface degradation for etching temperatures above 150ºC.

Elevated Temperature Reactive Ion Etching of GaAs and AIGaAs in C2H6 / H2

1989 ◽  
Vol 158 ◽  
Author(s):  
S. J. Pearton ◽  
W. S. Hobson ◽  
K. S. Jones
Keyword(s):  
Elevated Temperature ◽  
Surface Morphology ◽  
Temperature Dependence ◽  
Etch Rate ◽  
Reactive Ion Etching ◽  
Atomic Composition ◽  
Hydrogen Passivation ◽  
Ion Etching ◽  
Polymer Deposition ◽  
Etched Surface

ABSTRACTThe temperature dependence of etch rate, surface morphology and atomic composition, and depth of hydrogen passivation of Si dopants in n-type GaAs and AIGaAs has been measured for reactive ion etching in C2H6 /H2. The etching of GaAs shows an increase of a factor of two between 150 and 250°C, decreasing at higher temperatures, while there is no temperature dependence for the etch rate of AlGaAs over the range 50-350°C. The As-to-Ga ratio in the nearsurface region of GaAs remains unchanged over the whole temperature range investigated and there is no polymer deposition. The etched surface morphology is smooth for both GaAs and AIGaAs for all temperatures while the depth of Si dopant passivation by hydrogen shows an increase with increasing substrate temperature during the etching treatment.

The Influence of the InAlAs Layer Surface Morphology on the Temperature Dependence of Parameters of Au/Ti/n-InAlAs(001) Schottky Diodes

2019 ◽  
Vol 45 (2) ◽  
pp. 180-184
Author(s):  
I. B. Chistokhin ◽  
M. S. Aksenov ◽  
N. A. Valisheva ◽  
D. V. Dmitriev ◽  
I. V. Marchishin ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Temperature Dependence ◽  
Schottky Diodes ◽  
Layer Surface

COMPARISON OF THE Ti/n-GaAs SCHOTTKY CONTACTS’ PARAMETERS FABRICATED USING DC MAGNETRON SPUTTERING AND THERMAL EVAPORATION

2016 ◽  
Vol 24 (04) ◽  
pp. 1750047 ◽  
Author(s):  
OSMAN KAHVECI ◽  
ABDULLAH AKKAYA ◽  
ENISE AYYILDIZ ◽  
ABDÜLMECIT TÜRÜT
Keyword(s):  
Thermal Evaporation ◽  
Schottky Diodes ◽  
High Energy ◽  
Schottky Contacts ◽  
Native Oxide ◽  
Native Oxide Layer ◽  
Near Surface ◽  
Magnetron Deposition ◽  
Measurement Temperature ◽  
Temperature Range

We have fabricated the Ti/[Formula: see text]-type GaAs Schottky diodes (SDs) by the DC magnetron deposition and thermal evaporation, cut from the same GaAs substrates, and we have made a comparative study of the current–voltage ([Formula: see text]–[Formula: see text]) measurements of both SDs in the measurement temperature range of 160–300[Formula: see text]K with steps of 10[Formula: see text]K. The barrier height (BH) values of about 0.82 and 0.76[Formula: see text]eV at 300[Formula: see text]K have been obtained for the sputtered and evaporated SDs, respectively. It has been seen that the apparent BH value for the diodes has decreased with decreasing temperature obeying the single-Gaussian distribution (GD) for the evaporated diode and the double-GD for the sputtered diode over the whole measurement temperature range. The increment in BH and observed discrepancies in the sputtered diode have been attributed to the reduction in the native oxide layer present on the substrate surface by the high energy of the sputtered atoms and to sputtering-induced defects present in the near-surface region. We conclude that the thermal evaporation technique yields better quality Schottky contacts for use in electronic devices compared to the DC magnetron deposition technique.

Temperature Dependent Morphology Transition of GaN Films

1999 ◽  
Vol 572 ◽  
Author(s):  
A. R. A. Zauner ◽  
F. K. De Theue ◽  
P. R. Hageman ◽  
W. J. P. Van ◽  
J. J. Schermer ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Temperature Dependence ◽  
Growth Rates ◽  
Temperature Dependent ◽  
Relative Growth ◽  
Relative Growth Rates ◽  
Morphology Transition ◽  
Temperature Range ◽  
Sapphire Substrates ◽  
Low Pressure Mocvd

ABSTRACTThe temperature dependence of the surface morphology of GaN epilayers was studied with AFM. The layers were grown by low pressure MOCVD on (0001) sapphire substrates in the temperature range of 980°C-1085°C. In this range the (0001) and {1101} faces completely determine the morphology of 1.5 μm thick Ga-faced GaN films. For specimens grown at 20 mbar and temperatures below 1035°C the {1101} faces dominate the surface, which results in matt-white layers. At higher growth temperatures the morphology is completely determined by (0001) faces, which lead to smooth and transparent samples. For growth at 50 mbar, this transition takes place between 1000°C and 1015°C. It is shown that the morphology of the films can be described using a parameter αGaN, which is proportional to the relative growth rates of the (0001) and the {1101} faces.

Effect of N2 Plasma Treatments on Dry Etch Damage in n- and p-type GaN

2000 ◽  
Vol 639 ◽  
Author(s):  
D.G. Kent ◽  
K.P. Lee ◽  
A.P. Zhang ◽  
B. Luo ◽  
M.E. Overberg ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Schottky Diodes ◽  
Surface Region ◽  
Chemical Effect ◽  
Near Surface ◽  
Current Voltage ◽  
Extent Of Damage ◽  
P Type ◽  
Dry Etch ◽  
N2 Plasma

ABSTRACTThe extent of damage recovery by N2 plasma treatment of previously damaged n- and p-GaN has been examined using current-voltage (I-V) characteristics from Schottky diodes. There are two contributions to the observed improvement in the I-V characteristics, namely a simple annealing effect and also a chemical effect from reactive nitrogen. However the N2 plasma treatment does not fully restore the initial electrical properties of the near-surface region.

Comparison Of F2 Plasma Chemistries For Deep Etching Of SiC

2000 ◽  
Vol 640 ◽  
Author(s):  
K. P. Lee ◽  
P. Leerungnawarat ◽  
S. J. Pearton ◽  
F. Ren ◽  
S. N. G. Chu ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Etch Rate ◽  
Low Cost ◽  
Surface Region ◽  
High Rate ◽  
Near Surface ◽  
Ion Energy ◽  
Deep Etching ◽  
Process Pressure ◽  
Via Holes

ABSTRACTA number of F2-based plasma chemistries (NF3, SF6, PF5 and BF3) were investigated for high rate etching of SiC. The most advantageous of these is SF6, based on the high rate (0.6 μm · min−1) it achieves and its relatively low cost compared to NF3. The changes in electrical properties of the near-surface region are relatively minor when the incident ion energy is kept below approximately 75 eV. At a process pressure of 5 mTorr, the SiC etch rate falls-off by ∼15 % in 30 μm diameter via holes compared to larger diameter holes (> 60 μm diameter) or open areas on the mask.

scholarly journals Effect of Photo-Assisted RIE Damage on GaN

2003 ◽  
Vol 8 ◽  
Author(s):  
Z. Mouffak ◽  
N. Medelci-Djezzar ◽  
C. Boney ◽  
A. Bensaoula ◽  
L. Trombetta
Keyword(s):  
Surface Chemistry ◽  
Breakdown Voltage ◽  
Schottky Diode ◽  
Preliminary Data ◽  
Surface Region ◽  
Gas Mixture ◽  
Ion Etching ◽  
Near Surface ◽  
Enhanced Diffusion ◽  
P Type

Reactive Ion Etching (RIE) and Photo-Assisted RIE (PA-RIE) induced damage in GaN using simple Schottky structures and a BCl3/Cl2/N2gas mixture have been investigated. Schottky diode I-V characteristics following different RF powers and exposure times show significant changes caused by damage. This damage results in a reduction of the reverse breakdown voltage VB in n-type GaN and an increase in VB for p-type GaN. Our preliminary data on the PA-RIE process points to much reduced damage levels compared to conventional RIE. This result may be due to a change in surface chemistry or to a photo-enhanced diffusion of defects into the GaN layer, leaving a cleaner near-surface region.

Temperature dependence of hydrogen depth distribution in the near-surface region of stainless steel

Vacuum ◽  
2014 ◽  
Vol 109 ◽  
pp. 230-233 ◽  
Author(s):  
Kotaro Takeyasu ◽  
Masuaki Matsumoto ◽  
Katsuyuki Fukutani
Keyword(s):  
Stainless Steel ◽  
Temperature Dependence ◽  
Depth Distribution ◽  
Surface Region ◽  
Near Surface

Doping Effects on the Etching Chemistry of GaAs and Si

1990 ◽  
Vol 204 ◽  
Author(s):  
F. A. Houle
Keyword(s):  
Etch Rate ◽  
Driving Forces ◽  
Surface Region ◽  
Near Surface ◽  
Doping Effects ◽  
Independent Mechanism ◽  
Semiconductor Etching ◽  
Surface Intermediates ◽  
Microscopic Picture ◽  
P Type

ABSTRACTDoping effects on semiconductor etching rates have been proposed to be associated with field effects in the near-surface region. Detailed investigations of the chemistry of nand p-type Si and GaAs indicate that the majority carrier can also play an important role in determining the reactivity of surface intermediates, providing an independent mechanism for influencing the etch rate. A microscopic picture of central driving forces in semiconductor etching deduced from the doping cffects is proposed.

Diffusion and Subsurface Bonding of Hydrogen in Silicon

1987 ◽  
Vol 104 ◽  
Author(s):  
A. E. Jaworowski ◽  
L. S. Wielunski
Keyword(s):  
Molecular Hydrogen ◽  
Depth Profiling ◽  
Surface Region ◽  
Hydrogen Trapping ◽  
Complex Motion ◽  
Near Surface ◽  
Temperature Range ◽  
Molecule Formation ◽  
Trapping Process

ABSTRACTThe hydrogen depth profiling in the near-surface region in silicon reveals the existence of a subsurface hydrogen layer. This layer acts as a barrier to diffusion. The observed subsurface hydrogen profile rises and then drops off sharply with increasing depth and is stable up to 770 K. Our annealing data indicate a rather complex motion of monatomic and molecular hydrogen in the near-surface region (<1500 A) in the temperature range 300 – 800 K. The subsurface molecule formation represents the dominant hydrogen trapping process in silicon.

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