Flame Annealing of Ion Implanted Silicon

1983 ◽  
Vol 13 ◽  
Author(s):  
J. Narayan ◽  
R. T. Young
Keyword(s):  
Ion Implantation ◽  
Solid Phase ◽  
Amorphous Layer ◽  
Triangular Grid ◽  
Silicon Substrates ◽  
Dislocation Loops ◽  
Implantation Damage ◽  
Hydrogen Flame ◽  
Van Der Pauw ◽  
Flame Annealing

ABSTRACTWe have investigated flame annealing of ion implantation damage (consisting of amorphous layers and dislocation loops) in (100) and (111) silicon substrates. The temperature of a hydrogen flame was varied from 1050 to 1200°C and the interaction time from 5 to 10 seconds. Detailed TEM results showed that a “defect-free” annealing of amorphous layers by solid-phase-epitaxial growth could be achieved up to a certain concentration. However, dislocation loops in the region below the amorphous layer exhibited coarsening,i.e., the average loop size increased while the number density of loops decreased. Above a critical loop density, which was found to be a function of ion implantation variables and substrate temperature, formations of 90° dislocations (a cross-grid of dislocation in (100) and a triangular grid in (111) specimens) were observed. Electrical (Van der Pauw) measurements indicated nearly a complete electrical activation of dopants with mobility comparable to pulsed laser annealed specimens. The characteristics of p-n junction diodes showed a good diode perfection factor of 1.20–1.25 and low reverse bias currents.

Transient Annealing of Ion Implanted Gallium Arsenide

1982 ◽  
Vol 13 ◽  
Author(s):  
J.S. Williams
Keyword(s):  
Gallium Arsenide ◽  
Liquid Phase ◽  
Electrical Properties ◽  
Ion Implantation ◽  
Solid Phase ◽  
Dopant Activation ◽  
Implantation Damage ◽  
Dopant Redistribution ◽  
Ion Implanted

ABSTRACTThis paper provides a brief overview of the application of transient annealing to the removal of ion implantation damage and dopant activation in GaAs. It is shown that both the liquid phase and solid phase annealing processes are more complex in GaAs than those observed in Si. Particular attention is given to observations of damage removal, surface dissociation, dopant redistribution, solubility and the electrical properties of GaAs. The various annealing mechanisms are discussed and areas in need of further investigation are identified.

Modeling of Damage Evolution During Ion Implantation Into Silicon: A Monte Carlo Approach

1996 ◽  
Vol 439 ◽  
Author(s):  
S. Tian ◽  
M. Morris ◽  
S. J. Morris ◽  
B. Obradovic ◽  
A. F. Tasch
Keyword(s):  
Ion Implantation ◽  
Damage Evolution ◽  
Damage Model ◽  
Amorphous Layer ◽  
High Dose ◽  
Defect Production ◽  
Implantation Damage ◽  
Wide Range ◽  
Physically Based ◽  
First Time

AbstractWe present for the first time a physically based ion implantation damage model which successfully predicts both the as-implanted impurity range profiles and the damage profiles for a wide range of implant conditions for arsenic, boron, phosphorus, and BF2 implants into single-crystal (100) silicon. In addition, the amorphous layer thicknesses predicted by this damage model for high dose implants are also generally in excellent agreement with experiments. This damage model explicitly simulates the defect production and its subsequent evolution into the experimentally observable profiles for the first time. The microscopic mechanisms for damage evolution are further discussed.

Ion Implantation Damage and Annealing in GaSb

1993 ◽  
Vol 316 ◽  
Author(s):  
S. Iyer ◽  
R. Parakkat ◽  
B. Patnaik ◽  
N. Parikh ◽  
S. Hegde
Keyword(s):  
Ion Implantation ◽  
Surface Damage ◽  
Liquid Nitrogen Temperature ◽  
Amorphous Layer ◽  
Implantation Technique ◽  
Near Surface ◽  
Projected Range ◽  
Implantation Damage ◽  
Pb Ions ◽  
Better Than

ABSTRACTIon implantation technique is being investigated as an alternate technique for doping GaSb. Hence an understanding of the production and removal of the damage is essential. In this paper, we report on the damages produced by implantation of Te, Er, Hg and Pb ions into undoped (100) GaSb single crystals and their recovery by Rutherford backscattering (RBS)/channeling. The implantations of 1013 to 1013 ions/cm2 in GaSb were done at liquid nitrogen temperature at energies corresponding to the same projected range of 447Å. A comparison of the damage produced by the different ions and their recovery was made by RBS/channeling along <100> axis of GaSb. Near surface damage equivalent to that of an amorphous layer was observed even at lower doses. Upon annealing at 600°C for 30 sec., the Te implanted samples showed best recovery compared to others (Xmin = 11%), the value of Xmin being better than those normally observed in unimplanted Te-doped substrates.

A Comparison of Low Energy BF2 Implantation in Si and Ge Preamorphized Silicon

1988 ◽  
Vol 128 ◽  
Author(s):  
Gary A. Ruggles ◽  
Shin-Nam Hong ◽  
Jimmie J. Wortman ◽  
Mehmet Ozturk ◽  
Edward R. Myers ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Crystalline Silicon ◽  
Amorphous Layer ◽  
Low Energy ◽  
Electrical Activation ◽  
Silicon Substrates ◽  
Boron Diffusion ◽  
Junction Depth ◽  
Rapid Thermal Anneal ◽  
Boron Segregation

ABSTRACTLow energy (6 keV) BF2 implantation was carried out using single crystal, Ge-preamorphized, and Si-preamorphized silicon substrates. Implanted substrates were rapid thermal annealed at temperatures from 600°C to 1050'C and boron channeling, diffusion, and activation were studied. Ge and Si preamorphization energies were chosen to produce nearly identical amorphous layer depths as determined by TEM micrographs (approximately 40 nm in both cases). Boron segregation to the end-of-range damage region was observed for 6 keV BF2 implantation into crystalline silicon, although none was detected in preamorphized substrates. Junction depths as shallow as 50 nm were obtained. In this ultra-low energy regime for ion implantation, boron diffusion was found to be as important as boron channeling in determining the junction depth, and thus, preamorphization does not result in a significant reduction in junction depth. However, the formation of junctions shallower than 100 rmu appears to require RTA temperatures below 1000°C which can lead to incomplete activation unless the substrate has been preamorphized. In the case of preamorphized samples, Hall measurements revealed that nearly complete electrical activation can be obtained for preamorphized samples after a 10 second rapid thermal anneal at temperatures as low as 600°C.

Damage removal following low energy ion implantation

1988 ◽  
Vol 46 ◽  
pp. 906-907
Author(s):  
Edward R. Myers
Keyword(s):  
Ion Implantation ◽  
Large Scale ◽  
Solid Phase ◽  
Semiconductor Industry ◽  
Amorphous Layer ◽  
Light Ions ◽  
Large Scale Integration ◽  
Amorphous Surface ◽  
Scale Integration ◽  
Spatial Locations

Ion implantation has become the most common method of doping in the semiconductor industry. Precise concentration profiles with exact spatial locations are achievable. However, direct implantation of the desired dopant does not always meet the stringent size requirements of ultra large scale integration (ULSI). Implantation of light ions, such as boron, tend to channel down open crystallographic orientations in crystalline substrates resulting in enhanced ion penetration and an extended doping tail. Channeling can be prevented by creation of an amorphous surface layer prior to the dopant implant. The amorphous layer can be created by implanting heavy isoelectronic ions, such as Ge+, or by implanting molecular dopant ions like BF2. Solid phase epitaxial (SPE) regrowth restores the crystallinity of the amorphous layer and activates the dopant. However, the ion implantation process damages the crystalline material adjacent to the amorphous- crystalline (a/c) interface.

Ion Implantation Damage in CdS Crystals Using RBS/Channeling and Tem

1983 ◽  
Vol 27 ◽  
Author(s):  
N.R. Parikh ◽  
D.A. Thompson ◽  
R. Burkova ◽  
V.S. Raghunathan
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Incident Energy ◽  
Dislocation Loops ◽  
Implantation Damage ◽  
Axial Channeling

ABSTRACTImplantation damage in single crystal of CdS produced by 60 keV Bi+ and 45 keV Ne+ at 50 K and at 300 K has been studied. Measurements of Cd disorder and dechanneling behaviour have been made by means of RBS/channeling for He ions ranging in incident energy from 1.0 to 2.8 MeV either along <0001> or <1120> axial channeling directions. The amount of disorder measured were two orders of magnitude lower than the calculated Cd disorder. Damage when analysed along the <0001> axis is larger than when analysed along the <1120> axis.Xmim values for the implanted crystals decreases as the EO increases, when analysed along <0001> direction. TEM observations of Bi implanted samples show that the dislocation loops of b = 1/3 <1120> are produced. Attempts have been made to correlate the RBS/channeling results with the defect strictures observed in microscopy.

Rapid Thermal Annealing of Ion-Implanted Silicon and Gallium Arsenide

1983 ◽  
Vol 23 ◽  
Author(s):  
J. Narayan
Keyword(s):  
Gallium Arsenide ◽  
Free Surface ◽  
Electrical Properties ◽  
Point Defects ◽  
Solid Phase ◽  
Bulk Diffusion ◽  
Dislocation Loops ◽  
Enhanced Diffusion ◽  
Implantation Damage ◽  
Complete Annealing

ABSTRACTWe have investigated the annealing of ion implantation damage (in the form of amorphous layers and/or the layers containing only dislocation loops) in silicon and gallium arsenide. The annealing of amorphous layers occurs by solid-phase-epitaxial growth and that of dislocation loops involves primarily loop-coalescence as a result of conservative climb and glide processes. The annealing of disolated loops occurs primarily by a bulk diffusion process. Almost a “complete” annealing of displacement damage is possible for shallow implants provided loop–coalescence does not lead to the formation of cross–grid of dislocations. For deep implants, the free surface cannot provide an effective sink for defects as in the case of shallow implants. Dopant profiles can be controlled to less than 1000 Å in layers having good electrical properties. The enhanced diffusion of dopants is observed probably due to entrapment of point defects in the annealed regions.

Influence of Phosphorus Dopant Concentration on Recrystallization of Buried Amorphous Layers in SI(100) Produced by Channeled Implants

1988 ◽  
Vol 128 ◽  
Author(s):  
R. J. Schreutelkamp ◽  
K. T. F. Janssen ◽  
F. W. Saris ◽  
J. F. M. Westendorp ◽  
R. E. Kaim
Keyword(s):  
Dopant Concentration ◽  
Rutherford Backscattering Spectrometry ◽  
Solid Phase ◽  
Annealing Treatment ◽  
Amorphous Layer ◽  
Defect Layer ◽  
Defect Structures ◽  
Dislocation Loops ◽  
Thermal Annealing Treatment ◽  
Rapid Thermal Annealing Treatment

ABSTRACTBuried amorphous layers are produced in Si(100) by implantation of 100 keV P+ and Si+ ions under channeling condition along the <100>-direction. Rutherford Backscattering Spectrometry in combination with channeling shows that a continuous buried amorphous. layer with a thickness of 1300 Å results under a crystalline toplayer with a thickness of 600 Å. After Solid Phase Epitaxy a highly concentrated defect layer remains for all implants at the depth where the two amorphous/crystalline interfaces of the buried amorphous layer meet. Planar channeling along (100)-direction shows that dislocation loops are present after SPE regrowth at the ‘interface’ of the two crystalline regions for all implants. The size of the dislocation loops becomes smaller in the presence of phosphorus. Moreover, channeling analysis shows that in case of Rapid Thermal Annealing treatment in addition to the SPE regrowth process the defect structures present after full recrystallization can be more easily dissolved in case of the phosphorus implants as compared to the silicon self implant

Solid phase epitaxy of Germanium on Silicon substrates

2011 ◽  
Vol 1339 ◽  
Author(s):  
R.R. Lieten ◽  
Q.-B. Ma ◽  
J. Guzman ◽  
J.W. Ager ◽  
E.E. Haller ◽  
...  
Keyword(s):  
Solid Phase ◽  
Chemical Vapor ◽  
High Growth ◽  
Amorphous Layer ◽  
Thin Layers ◽  
Silicon Substrates ◽  
Solid Phase Epitaxy ◽  
X Ray Diffraction ◽  
Germanium Layer ◽  
Temperature Deposition

ABSTRACTWe demonstrate the possibilities of plasma enhanced chemical vapor deposition (PECVD) and solid phase epitaxy to obtain germanium on silicon with excellent crystalline properties, even for very thin layers (< 100 nm). Amorphous germanium layers are deposited by PECVD on silicon substrates. Deposition of an amorphous layer, without the presence of crystalline seeds, is critical. Crystalline inclusions must be avoided to obtain high crystal quality and a smooth surface after crystallization. PECVD is well suited for deposition of amorphous layers because low temperature deposition and high growth rates are possible. Additional experiments with molecular beam epitaxy show that it is not mandatory to have hydrogen present inside the germanium layer to obtain highly crystalline germanium. Atomic hydrogen plays, however, an important role during deposition by lowering the surface adatom mobility and consequently increasing the disorder of the deposited layer. Synchrotron X-ray diffraction shows no germanium diffraction, indicating that the layer does not contain crystalline seeds. Crystallization can be performed at limited temperatures: Raman measurements show crystallization between 400 and 425 °C. Another important advantage of the proposed method is the scalability: germanium layers of larger diameter can be obtained by simply using larger silicon substrates.

Ion Implantation Damage and B Diffusion in Low Energy B Implantation with Ge Preimplantation

1995 ◽  
Vol 396 ◽  
Author(s):  
M. Kase ◽  
H. Mori
Keyword(s):  
Ion Implantation ◽  
Diffusion Length ◽  
Solid Phase ◽  
Low Energy ◽  
Solid Phase Epitaxy ◽  
Light Damage ◽  
Sheet Resistivity ◽  
Enhanced Diffusion ◽  
Implantation Damage

AbstractFor low energy B (LEB) implantation into Si, the channeling tail is larger than for BF2+ implantation, so Ge+ preamorphization is expected to provide a shallower junction. We studied the Ge+ and B+ implantation damages and the damage-induced B diffusion. The substrate implanted Ge+ with 2×l014 cm-2, that is, a complete amorphization, retains less residual defects after RTA. However the sheet resistivity (S) is higher than the sample implanted with only LEB. Solid phase epitaxy (SPE) of amorphized layer causes B out-diffusion. The diffusion length of the amorphized substrate is smaller than that of LEB. We expect that the B diffusion is enhanced by the LEB damage, which corresponds to the enhanced diffusion of light damage.

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