Photoluminescence of InP/GaAs/Si Heterostructures

1988 ◽  
Vol 144 ◽  
Author(s):  
V.P. Mazzi ◽  
N.M. Haegel ◽  
S.M. Vernon ◽  
V.E. Haven
Keyword(s):  
Residual Stress ◽  
Thermal Expansion ◽  
Low Temperature ◽  
Band Gap ◽  
Buffer Layer ◽  
Thermal Expansion Mismatch ◽  
Si Substrates ◽  
Gaas Buffer Layer ◽  
Buffer Layer Thickness ◽  
Low Temperature Photoluminescence

ABSTRACTLow temperature photoluminescence results from MOCVD epitaxial InP grown on GaAs/Si substrates are presented as a function of thickness of the GaAs buffer layer. As a consequence of thermal expansion mismatch of the heterostructure, the InP layer contains residual stress which causes the band gap to shift and splits the valence band degeneracy of the mj = ± 3/2 and the mj = ± 1/2 bands. Both the shifting and splitting phenomena are clearly seen in tite PL results and are shown to depend on the GaAs buffer layer thickness.

Heterogeneous Strain Relaxation in GaAs on Si (100)

1988 ◽  
Vol 116 ◽  
Author(s):  
A. Freundlich ◽  
G. Neu ◽  
A. Leycuras ◽  
R. Carles ◽  
C. Verie
Keyword(s):  
Residual Stress ◽  
Low Temperature ◽  
Room Temperature ◽  
Strain Relaxation ◽  
Photoluminescence Excitation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Si Substrates ◽  
Low Temperature Photoluminescence ◽  
Epilayer Surface

AbstractResidual stress in MOVPE grown GaAs on (100)Si substrates is investigated using Haman spectroscopy, X-ray diffraction, low temperature photoluminescence and photoluminescence excitation spectroscopy experiments. At room temperature, 2 µm-thick GaAs/Si is found to be under biaxial (100) tensile stress of X = 1.8 ± 0.3 kbar, near the epilayer surface. The stress magnitude decreases as the distance from interface decreases. PL and PLE studies on post-growth thermally annealed GaAs/Si reveal coexistence of unstrained and strained GaAs.

MOCVD Growth of Gan on Silicon and Related Surfaces

1998 ◽  
Vol 512 ◽  
Author(s):  
J. Han ◽  
J. G. Fleming ◽  
D. M. Follstaedt
Keyword(s):  
Thermal Expansion ◽  
High Temperature ◽  
Buffer Layer ◽  
Silicon On Insulator ◽  
Thermal Expansion Mismatch ◽  
Subsequent Growth ◽  
Si Substrates ◽  
Mocvd Growth ◽  
Spatial Coherency

ABSTRACTThe growth of GaN on silicon (Si) substrates by MOCVD is reported in this paper. The use of a high-temperature AIN buffer layer appears to be necessary to establish an initial template morphology for the subsequent growth of GaN. Nucleation modes of GaN on SiO2, (100) Si, and (111) Si are compared; it is shown that the spatial coherency among the nuclei is most preserved when the growth occurred on the hexagonal Si (111) surface. To circumvent the problem associated with cracking due to a thermal expansion mismatch, we also investigate the possibility of using a silicon-on-insulator (SOI) scheme.

Thin YBa2Cu3O7–x Films Prepared by Low Temperature Coevaporation on Si Substrates Without Buffer Layer

1990 ◽  
Vol 119 (2) ◽  
pp. K155-K158 ◽  
Author(s):  
Š. Chromik ◽  
V. Štrbík ◽  
Š. Beňačka ◽  
R. Adam ◽  
M. Jergel
Keyword(s):  
Low Temperature ◽  
Buffer Layer ◽  
Si Substrates

Low temperature photoluminescence study in AlxGa1−xAs alloys in the indirect band gap region (x≳0.4)

1995 ◽  
Vol 78 (8) ◽  
pp. 5090-5097 ◽  
Author(s):  
G. Torres‐Delgado ◽  
R. Castanedo‐Perez ◽  
P. Diaz‐Arencibia ◽  
J. G. Mendoza‐Alvarez ◽  
J. L. Orozco‐Vilchis ◽  
...  
Keyword(s):  
Low Temperature ◽  
Band Gap ◽  
Photoluminescence Study ◽  
Indirect Band Gap ◽  
Low Temperature Photoluminescence

A Generalized Model for Residual Stress Caused by Thermal Mismatch in Multilayer Structures

2011 ◽  
Vol 704-705 ◽  
pp. 1284-1290
Author(s):  
Yu Mei Bai ◽  
Ying Qiang Xu ◽  
Tao Zhang
Keyword(s):  
Residual Stress ◽  
Thermal Expansion ◽  
Temperature Variation ◽  
Analytical Model ◽  
Layer Structure ◽  
Engineering Application ◽  
Effect Of Temperature ◽  
Multilayer Structures ◽  
Coating System ◽  
Thermal Expansion Mismatch

An analytical model based on multilayer structure with thermal expansion mismatch caused by temperature gradients was established to predict the residual stress in the system. The solution obtained from the model is independent of the number of layers. Three simplified models: bi-layer structure, coating system and film system with great compatibility are developed considering different engineering application. And the bilayer structure is verified by Stoney’s equation under the same conditions. Tri-layer coating system ZrO2/ Al2O3/1Cr18Ni9Ti is established in order to research the effect of temperature variations on the residual stress between different layers. The results suggested the stress has obvious mutation in coating interface with different temperature variation. And the residual stress with different temperature variation in different layers is larger than that with identical temperature variation. Key words: multilayer structures; residual stress; analytical model; thermal expansion mismatch; temperature variation

Low temperature photoluminescence properties of CsPbBr3 quantum dots embedded in glasses

2017 ◽  
Vol 19 (26) ◽  
pp. 17349-17355 ◽  
Author(s):  
Bing Ai ◽  
Chao Liu ◽  
Zhao Deng ◽  
Jing Wang ◽  
Jianjun Han ◽  
...  
Keyword(s):  
Activation Energy ◽  
Quantum Dots ◽  
Thermal Expansion ◽  
Low Temperature ◽  
Size Dependence ◽  
Phonon Coupling ◽  
Photoluminescence Properties ◽  
Electron Phonon Coupling ◽  
Cspbbr3 Quantum Dots ◽  
Low Temperature Photoluminescence

Size dependence of exciton activation energy, electron–phonon coupling strength, and thermal expansion of the bandgap of CsPbBr3 QDs were studied.

scholarly journals The Structure of GaAs/Si(211) Heteroepitaxial Layers

1987 ◽  
Vol 91 ◽  
Author(s):  
Zuzanna Liliental-Weber ◽  
E.R. Weber ◽  
J. Washburn ◽  
T.Y. Liu ◽  
H. Kroemer
Keyword(s):  
Buffer Layer ◽  
Surface Preparation ◽  
Gaas Layer ◽  
Misfit Dislocations ◽  
Strained Layer ◽  
Si Substrates ◽  
Density Of Dislocations ◽  
Gaas Buffer Layer ◽  
Graded Layers ◽  
Strained Layer Superlattices

ABSTRACTGallium arsenide films grown on (211)Si by molecular-beam epitaxy have been investigated using transmission electron microscopy. The main defects observed in the alloy were of misfit dislocations, stacking faults, and microtwin lamellas. Silicon surface preparation was found to play an important role on the density of defects formed at the Si/GaAs interface.Two different types of strained-layer superlattices, InGaAs/InGaP and InGaAs/GaAs, were applied either directly to the Si substrate, to a graded layer (GaP-InGaP), or to a GaAs buffer layer to stop the defect propagation into the GaAs films. Applying InGaAs/GaAs instead of InGaAs/InGaP was found to be more effective in blocking defect propagation. In all cases of strained-layer superlattices investigated, dislocation propagation was stopped primarily at the top interface between the superlattice package and GaAs. Graded layers and unstrained AlGaAs/GaAs superlattices did not significantly block dislocations propagating from the interface with Si. Growing of a 50 nm GaAs buffer layer at 505°C followed by 10 strained-layer superlattices of InGaAs/GaAs (5 nm each) resulted in the lowest dislocation density in the GaAs layer (∼;5×l07/cm2) among the structures investigated. This value is comparable to the recently reported density of dislocations in the GaAs layers grown on (100)Si substrates [8]. Applying three sets of the same strained layersdecreased the density of dislocations an additional ∼2/3 times.

scholarly journals Constraint Effects on Thin Film Channel Cracking Behavior

2005 ◽  
Vol 20 (9) ◽  
pp. 2266-2273 ◽  
Author(s):  
Ting Y. Tsui ◽  
Andrew J. McKerrow ◽  
Joost J. Vlassak
Keyword(s):  
Thin Film ◽  
Residual Stress ◽  
Buffer Layer ◽  
Layer Thickness ◽  
Silicon Substrate ◽  
Shear Lag ◽  
Shear Lag Model ◽  
Lag Model ◽  
Buffer Layer Thickness ◽  
Cds Film

One of the most common forms of cohesive failure observed in brittle thin film subjected to a tensile residual stress is channel cracking, a fracture mode in which through-film cracks propagate in the film. The crack growth rate depends on intrinsic film properties, residual stress, the presence of reactive species in the environments, and the precise film stack. In this paper, we investigate the effect of various buffer layers sandwiched between a brittle carbon-doped-silicate (CDS) film and a silicon substrate on channel cracking of the CDS film. The results show that channel cracking is enhanced if the buffer layer is more compliant than the silicon substrate. Crack velocity increases with increasing buffer layer thickness and decreasing buffer layer stiffness. This is caused by a reduction of the constraint imposed by the substrate on the film and a commensurate increase in energy release rate. The degree of constraint is characterized experimentally as a function of buffer layer thickness and stiffness, and compared to the results of a simple shear lag model that was proposed previously. The results show that the shear lag model does not accurately predict the effect of the buffer layer.

Formation of an Interfacial Buffer Layer for 3C-SiC Heteroepitaxy on AlN/Si Substrates

2014 ◽  
Vol 778-780 ◽  
pp. 251-254 ◽  
Author(s):  
Kazuki Meguro ◽  
Tsugutada Narita ◽  
Kaon Noto ◽  
Hideki Nakazawa
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Surface Morphology ◽  
Buffer Layer ◽  
Vapor Deposition ◽  
Intermediate Layer ◽  
Chemical Vapor ◽  
Si Substrates ◽  
Pressure Chemical ◽  
Sic Films

We have formed a SiC interfacial buffer layer on AlN/Si substrates at a low temperature by low-pressure chemical vapor deposition (LPCVD) using monomethylsilane (CH3SiH3; MMS), and grew 3C-SiC films on the low-temperature buffer layer by LPCVD using MMS. We investigated the surface morphology and crystallinity of the grown SiC films. It was found that the formation of the SiC buffer layer suppressed the outdiffusion of Al and N atoms from the AlN intermediate layer to the SiC films and further improved the surface morphology and crystallinity of the films.

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