Low-Temperature Self Aligned TiSi2'TiN Bilayer by Rapid Thermal Nitridation of Metastable Titanium Silicide in NH3 Ambient

1989 ◽  
Vol 146 ◽  
Author(s):  
Ahmad Kermani ◽  
John Kuehne
Keyword(s):  
Nitrided Layer ◽  
Electrical Characterization ◽  
Titanium Silicide ◽  
Bilayer Structure ◽  
Simultaneous Formation ◽  
Silicide Layer ◽  
High Temperature Process ◽  
Thermal Nitridation ◽  
Kinetics Of

ABSTRACTRapid thermal nitridation (RTN) of metastable Ti silicide in pure ammonia ambient has been shown to result in the formation of a bilayer TiSi 2'TiN structure. This bilayer structure provides an effective self-aligned diffusion barrier against aluminum spiking. Further, the simultaneous formation of TiN on top of the TiSi2 preserves the low resistivity of the silicide layer upon subsequent high temperature process steps. Rutherford backscatttering spectroscopy, Auger electron spectroscopy and four point probe techniques were used to analyze the stoichiometry of the nitrided layer, and to study the kinetics of the nitridation reaction. The nitridation of the metastable silicide film is a substitutional eaction which begins at the surface of the silicide and progresses by substituting nitrogen atoms for silicon. The nitrogen atoms result from dissociation of ammonia The released silicon atoms then diffuse to the silicide'silicon interface and deposit in an epitaxial manner. The benefits of the proposed metallization scheme are substantiated by electrical characterization of the bilayer structure in comparison with a conventional process.

Properties of SiO2/4H-SiC Interfaces with an Oxide Deposited by a High-Temperature Process

2017 ◽  
Vol 897 ◽  
pp. 331-334 ◽  
Author(s):  
Marilena Vivona ◽  
Patrick Fiorenza ◽  
Ferdinando Iucolano ◽  
Andrea Severino ◽  
Simona Lorenti ◽  
...  
Keyword(s):  
High Temperature ◽  
Electrical Characterization ◽  
Interface State ◽  
State Density ◽  
Oxide Semiconductor ◽  
Semiconductor Interface ◽  
Mos Capacitors ◽  
High Temperature Process ◽  
Lower Temperature

This work reports on the physical and electrical characterization of the oxide/semiconductor interface in MOS capacitors with the SiO2 layer deposited by a high temperature process from dichlorosilane and nitrogen-based vapor precursors and subjected to a post deposition annealing process in N2O. Low interface state density (Dit ≈ 9.0×1011cm-2eV-1) was found at 0.2 eV from EC, which is comparable to the values typically obtained in other lower temperature deposited oxides (e.g., TEOS). A barrier height of 2.8 eV was derived from the Fowler-Nordheim plot, very close to the ideal value expected for SiO2/4H-SiC interface. Basing on these preliminary results, the integration in MOSFETs devices can be envisaged.

Electrical Characterization of Interface Defects in MOS Structures Containing Silicon Nanoclusters

2014 ◽  
Vol 976 ◽  
pp. 129-132 ◽  
Author(s):  
Abraham Arias ◽  
Nicola Nedev ◽  
Mario Curiel ◽  
Diana Nesheva ◽  
Emil Manolov ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Interface Roughness ◽  
Silicon Nanoclusters ◽  
Furnace Annealing ◽  
High Temperature Process ◽  
Transmission Electron ◽  
Si Nanoparticles ◽  
Mos Structures ◽  
Si Wafer

The effect of annealing temperature on the properties of c-Si wafer/SiOx interface (x = 1.15 and 1.3) is studied by Transmission Electron Microscopy and Capacitance/Conductance-Voltage measurements. Furnace annealing for 60 min at 700 and 1000 °C is used to grow amorphous or crystalline Si nanoparticles. The high temperature process leads to an epitaxial overgrowth of the Si wafer and an increase of the interface roughness, 3-4 monolayers at 700 °C and 4-5 monolayers at 1000 °C. The increased surface roughness is in correlation with the higher density of electrically active interface states.

Irradiation behavior of pyrolytic silicon carbide

1983 ◽  
Vol 41 ◽  
pp. 72-73
Author(s):  
R. J. Lauf
Keyword(s):  
Silicon Carbide ◽  
Fission Products ◽  
Thermodynamics And Kinetics ◽  
Neutron Fluences ◽  
Fuel Particles ◽  
Sic Coatings ◽  
Irradiation Behavior ◽  
Kinetics Of ◽  
Htgr Fuel

Fuel particles for the High-Temperature Gas-Cooled Reactor (HTGR) contain a layer of pyrolytic silicon carbide to act as a miniature pressure vessel and primary fission product barrier. Optimization of the SiC with respect to fuel performance involves four areas of study: (a) characterization of as-deposited SiC coatings; (b) thermodynamics and kinetics of chemical reactions between SiC and fission products; (c) irradiation behavior of SiC in the absence of fission products; and (d) combined effects of irradiation and fission products. This paper reports the behavior of SiC deposited on inert microspheres and irradiated to fast neutron fluences typical of HTGR fuel at end-of-life.

Structural and Electrical Characterization of Shaped Beam Laser Recrystallized Polysilicon on Amorphous Substrates

1981 ◽  
Vol 4 ◽  
Author(s):  
T. J. Stultz ◽  
J. F. Gibbons
Keyword(s):  
Grain Size ◽  
Electrical Characterization ◽  
Grain Structure ◽  
Electrical Characteristics ◽  
Shaped Beam ◽  
Beam Laser ◽  
Cw Laser ◽  
Amorphous Substrates ◽  
Circular Beam

ABSTRACTStructural and electrical characterization of laser recrystallized LPCVD silicon films on amorphous substrates using a shaped cw laser beam have been performed. In comparing the results to data obtained using a circular beam, it was found that a significant increase in grain size can be achieved and that the surface morphology of the shaped beam recrystallized material was much smoother. It was also found that whereas circular beam recrystallized material has a random grain structure, shaped beam material is highly oriented with a <100> texture. Finally the electrical characteristics of the recrystallized film were very good when measured in directions parallel to the grain boundaries.

Vapor Deposition Polymerization and Electrical Characterization of TPD Thin Films

2011 ◽  
Vol E94-C (2) ◽  
pp. 157-163 ◽  
Author(s):  
Masakazu MUROYAMA ◽  
Ayako TAJIRI ◽  
Kyoko ICHIDA ◽  
Seiji YOKOKURA ◽  
Kuniaki TANAKA ◽  
...  
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Electrical Characterization
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