Mullite Ceramics for the Application to Advanced Packaging Technology

1989 ◽  
Vol 154 ◽  
Author(s):  
Jun Tanaka ◽  
Satoshi Kajita ◽  
Masami Terasawa
Keyword(s):  
Thermal Conductivity ◽  
Dielectric Constant ◽  
Thermal Expansion ◽  
Aluminum Nitride ◽  
Heat Sink ◽  
High Thermal Conductivity ◽  
System A ◽  
Lower Dielectric Constant ◽  
Advanced Packaging ◽  
Mullite Ceramics

AbstractMullite ceramics were developed for multilayered packages, which have a lower dielectric constant and a nearer thermal expansion to that of silicon than those of alumina. The multilayered mullite packages are manufactured by using a similar cofired technology with tungsten or molybdenum to the conventionally used alumina system. A new brazing material and a new lead material were developed to be combined with the mullite ceramics Multilayered mullite packages with a brazed aluminum nitride heat sink, which has a high thermal conductivity, were developed to compensate a low thermal conductivity of the mullite itself. The packages are one of the highest performance packages.

Aluminum Nitride fibers from a Thermoplastic Organoaluminum Precursor

1987 ◽  
Vol 108 ◽  
Author(s):  
John D. Bolt ◽  
Fred N. Tebbe
Keyword(s):  
Thermal Conductivity ◽  
Dielectric Constant ◽  
Thermal Expansion ◽  
High Temperature ◽  
Aluminum Nitride ◽  
Melt Spinning ◽  
Elevated Temperatures ◽  
Fine Particles ◽  
Bulk Ceramic ◽  
Higher Temperature

ABSTRACTA new organoaluminum polymer (EtAINH)n(Et2AlNH2)m·AlEt3 derived from triethylaluminum and ammonia, is thermoplastic at elevated temperatures and a glassy solid at ambient temperature. As a thermoplastic it can be processed in certain shapes, solidified, cured and transformed to dense aluminum nitride with retention of its shape. Aluminum nitride fibers are prepared by melt spinning the polymer, pyrolyzing in ammonia and at high temperature in nitrogen. The AlN microstructure forms as very fine particles at 400–600°C, coarsens at higher temperature, and densifies at 1600–1800 °C into polycrystalline AlN with submicron grains. Mechanical strength, thermal expansion and dielectric constant are consistent with bulk ceramic values. Initial thermal conductivity deduced from composite measurements is 82 W/m°K in fibers containing 0.5 to 1.0 percent oxygen.

scholarly journals Ultra-high lattice thermal conductivity and the effect of pressure in superhard hexagonal BC2N

2020 ◽  
Vol 8 (44) ◽  
pp. 15705-15716
Author(s):  
Safoura Nayeb Sadeghi ◽  
S. Mehdi Vaez Allaei ◽  
Mona Zebarjadi ◽  
Keivan Esfarjani
Keyword(s):  
Thermal Conductivity ◽  
Thermal Expansion ◽  
First Principles ◽  
Heat Sink ◽  
Lattice Thermal Conductivity ◽  
Electronic Devices ◽  
Thermomechanical Properties ◽  
High Thermal Conductivity ◽  
Effect Of Pressure

Using first-principles methods to calculate thermomechanical properties of BC2N, we investigate the effect of pressure on its high thermal conductivity and show that its thermal expansion matches that of Si, making it a good candidate as a heat sink for electronic devices.

Composites for Electronic Substrate Applications

1987 ◽  
Vol 108 ◽  
Author(s):  
R. Gerhardt
Keyword(s):  
Thermal Conductivity ◽  
Dielectric Constant ◽  
Thermal Expansion ◽  
Experimental Evidence ◽  
Single Phase ◽  
High Thermal Conductivity ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Composite Approach ◽  
Electronic Substrates

ABSTRACTThe need for low dielectric constant, high thermal conductivity, matched thermal expansion and co-processability in electronic substrates is reviewed. Since no single phase material is able to satisfy all the requirements, a microscopic composite approach is proposed. Recent experimental evidence supporting the concept is also presented.

Design and Optimization of a Composite Heat Spreader to Improve the Thermal Management of a 3D Integrated Circuit

2021 ◽  
Author(s):  
Andisheh Tavakoli ◽  
Kambiz Vafai
Keyword(s):  
Thermal Conductivity ◽  
Heat Sink ◽  
Variable Temperature ◽  
Heat Removal ◽  
High Conductivity ◽  
High Thermal Conductivity ◽  
Maximum Temperature ◽  
Optimal Distribution ◽  
Heat Spreader ◽  
The Impact

Abstract The present study analyzes the optimal distribution of a limited amount of high thermal conductivity material to enhance the heat removal of circular 3D integrated circuits, IC. The structure of the heat spreader is designed as a composite of high thermal conductivity (Boron Arsenide) and moderate thermal conductivity (copper) materials. The volume ratio of high-conductivity inserts to the total volume of the spreader is set at a fixed pertinent ratio. Two different boundary conditions of constant and variable temperature are considered for the heat sink. To examine the impact of adding high-conductivity inserts on the cooling performance of the heat spreader, various patterns of the single and double ring inserts are studied. A parametric study is performed to find the optimal location of the rings. Moreover, the optimal distribution of the high-conductivity material between the inner and outer rings is found. The results show that for the optimal conditions, the maximum temperature of the 3D IC is reduced up to 10%; while the size of the heat sink, and heat spreader can be diminished by as much as 200%.

scholarly journals Silver Nanoparticle-Deposited Aluminum Oxide Nanoparticle as Fillers for Epoxy Composites with High Thermal Conductivity

2018 ◽  
Vol 27 (6) ◽  
pp. 096369351802700
Author(s):  
Tao Huang ◽  
Yimin Yao ◽  
Gang Zhang ◽  
Fanling Meng
Keyword(s):  
Thermal Conductivity ◽  
Aluminum Nitride ◽  
Silver Nanoparticle ◽  
Ag Nanoparticles ◽  
Thermal Contact Resistance ◽  
Epoxy Composite ◽  
Thermal Contact ◽  
High Thermal Conductivity ◽  
Epoxy Composites ◽  
Oxide Nanoparticle

With the development of polymer-filled composites, the demand of high thermal conductivity materials is much attractive than ever. However, the process of a common method to improve thermal conductivity of composites is considerably complicated. The aim of this study is to investigate thermal conductivity of epoxy filled silver nanoparticle deposited aluminum nitride nanoparticles with relatively convenient process. We found that the thermal conductivities of composites filled with AlN/Ag nanoparticles are effectively enhanced, which is enormously increased from 0.48 Wm-1K-1(1.88 vol%) to 3.66 Wm-1K-1 (19.54 vol%). This can be ascribed to the bridging connections of silver nanoparticle among aluminum nitride nanoparticles. In addition, the thermal contact resistance of the epoxy composites filler with AlN/Ag nanoparticles is decreased, which is proved by the fitting measured thermal conductivity of epoxy composite with one physical model. We believe the finding has great potential for any microelectronic application.

Metallization Behavior in Aluminum Nitride Electronic Packages

1990 ◽  
Vol 203 ◽  
Author(s):  
Ellice Y. Luh ◽  
Leonard E. Dolhert ◽  
Jack H. Enloe ◽  
John W. Lau
Keyword(s):  
Thermal Conductivity ◽  
Dielectric Properties ◽  
Aluminum Nitride ◽  
High Density ◽  
High Thermal Conductivity ◽  
Electronic Packages ◽  
Oxide Ceramics ◽  
Chemical Behavior ◽  
Hermetic Seal ◽  
Silicon Based

ABSTRACTCharacteristics such as CTE close to that of silicon, high thermal conductivity, and good dielectric properties make aluminum nitride (AIN) an excellent dielectric for packaging silicon-based high density multichip interconnects. However, there remains many aspects of its behavior that have not been characterized. One such example is the behavior of the various metallizations used within a package. As with A12O3, these metallizations must contribute toward a hermetic seal separating the die from the environment. However, the chemical behavior of the metallization systems used for A12O3 may not be compatible with non-oxide ceramics such as AIN. Consequently, these chemical interactions are investigated in view of the requirements for each application within electronic packages. Hermeticity testing results are also included in the discussion.

Well dispersed silicon nanospheres synthesized by RF thermal plasma treatment and their high thermal conductivity and dielectric constant in polymer nanocomposites

RSC Advances ◽  
2015 ◽  
Vol 5 (13) ◽  
pp. 9432-9440 ◽  
Author(s):  
Guolin Hou ◽  
Benli Cheng ◽  
Fei Ding ◽  
Mingshui Yao ◽  
Yuebin Cao ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Dielectric Constant ◽  
Plasma Treatment ◽  
Polymer Nanocomposites ◽  
Thermal Plasma ◽  
High Thermal Conductivity ◽  
Large Dielectric Constant ◽  
Rf Thermal Plasma

Nanocomposites with high thermal conductivity and large dielectric constant incorporated with Si nanospheres prepared by thermal plasma are reported.

Separation of Internal Strains and Lattice Distortion Caused by Oxygen Impurities in Aluminum Nitride Hot-Pressed Ceramics

1994 ◽  
Vol 38 ◽  
pp. 479-487 ◽  
Author(s):  
O. N. Grigoriev ◽  
S. M. Kushnerenko ◽  
K. A. Plotnikov ◽  
W. Kreher
Keyword(s):  
Thermal Conductivity ◽  
Aluminum Nitride ◽  
Integrated Circuit ◽  
Room Temperature ◽  
Lattice Distortion ◽  
High Thermal Conductivity ◽  
Hybrid Integrated Circuit ◽  
Oxygen Contamination ◽  
Internal Strains ◽  
Oxygen Impurities

Recently aluminum nitride (A1N) has been intensively studied as a promising material for production of hybrid integrated circuit substrates because of its high thermal conductivity, high fjexural strength, and nontoxic nature. The estimated theoretical value of its thermal conductivity at room temperature is 320 W/mK, but it is strongly degraded by the introduction of oxygen. The measured values vary from 30 to 260 W/mK, Therefore, in production of this material the reduction of oxygen contamination is of paramount importance.

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