Amorphous to Polycrystal Transition Assisted by Ion Beam Irradiation in Silicon

1989 ◽  
Vol 157 ◽  
Author(s):  
C. Spinella ◽  
S. Lombardo ◽  
S. U. Campisano
Keyword(s):  
Cluster Size ◽  
Thermal Process ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Irradiation Temperature ◽  
Ion Beam Irradiation ◽  
Critical Cluster ◽  
Chemical Vapor Deposited ◽  
Critical Cluster Size

ABSTRACTThe ion beam induced growth of isolated silicon grains has been studied in chemical vapor deposited amorphous layers. The crystal radius increases linearly with the 1on dose and the growth rate depends in a complex way on the irradiation temperature in the 320 - 480 °C investigated temperature range. The grain density does not depend on the ion dose but it increases exponentially with increasing irradiation temperature. The grain density obtained after a pure thermal process on similar samples is In any case larger than the density appearing after ion irradiation. These facts may be explained by assuming that during ion irradiation only pre-existing seeds whose size is larger than a critical value can grow. This critical cluster size is larger than the critical cluster size for a pure thermal process.

Spontaneous formation of nanometer-scale self-organized structures in Ag-Cu alloys under irradiation

2000 ◽  
Vol 647 ◽  
Author(s):  
Raúl A. Enrique ◽  
Pascal Bellon
Keyword(s):  
Ion Irradiation ◽  
Ion Beam ◽  
Solute Concentration ◽  
Irradiation Temperature ◽  
Nanometer Scale ◽  
Beam Irradiation ◽  
X Ray Diffraction ◽  
Ion Beam Irradiation ◽  
Self Organized ◽  
The One

AbstractIon-beam irradiation can be used as a processing tool to synthesize metastable materials. A particular case is the preparation of solid solutions from immiscible alloys, which have been achieved for a whole range of systems. In this process, enhanced solute concentration is obtained through the local mixing induced by each irradiation event, which if occurring at a high enough frequency, can outweigh demixing by thermal diffusion. The resulting microstructure forms in far from equilibrium conditions, and theoretical results for these kind of driven alloys have shown that novel microstructures exhibiting self-organization can develop. To test these predictions, we prepare Ag-Cu multilayered thin films that we subject to 1 MeV Kr+-ion irradiation at temperatures ranging from room temperature to 225 °C, and characterize the specimens by x-ray diffraction, TEM and STEM. We observe two different phenomena occurring at different length scales: On the one hand, regardless of the irradiation temperature, grains grow under irradiation until reaching a size limited by film thickness (~200 nm). On the other hand, the distribution of species inside the grains is greatly affected by the irradiation temperature. At intermediate temperatures, a semi-coherent decomposition is observed at a nanometer scale. This nanometer-scale decomposition phenomenon appears as an evidence of patterning, and thus confirms on the possibility of using ion-beam irradiation as a route to synthesize nanostructured materials with novel magnetic and optical properties.

Ion Beam Induced Interfacial Reactions in Molybdenum Thin Films on Silicon

1981 ◽  
Vol 39 ◽  
pp. 162-163
Author(s):  
L. J. Chen ◽  
L. S. Hung ◽  
J. W. Mayer
Keyword(s):  
Ion Beam ◽  
Chemical Vapor ◽  
Interfacial Reactions ◽  
Practical Applications ◽  
Microelectronic Devices ◽  
Recent Emergence ◽  
Chemical Vapor Deposited ◽  
Atomic Mixing ◽  
Silicon Interface ◽  
Kinetics Of

When an energetic ion penetrates through an interface between a thin film (of species A) and a substrate (of species B), ion induced atomic mixing may result in an intermixed region (which contains A and B) near the interface. Most ion beam mixing experiments have been directed toward metal-silicon systems, silicide phases are generally obtained, and they are the same as those formed by thermal treatment.Recent emergence of silicide compound as contact material in silicon microelectronic devices is mainly due to the superiority of the silicide-silicon interface in terms of uniformity and thermal stability. It is of great interest to understand the kinetics of the interfacial reactions to provide insights into the nature of ion beam-solid interactions as well as to explore its practical applications in device technology.About 500 Å thick molybdenum was chemical vapor deposited in hydrogen ambient on (001) n-type silicon wafer with substrate temperature maintained at 650-700°C. Samples were supplied by D. M. Brown of General Electric Research & Development Laboratory, Schenectady, NY.

Growth of Cu-Oxide Protrusion by Ar Ion Irradiation

2007 ◽  
Vol 558-559 ◽  
pp. 1359-1362 ◽  
Author(s):  
Hiroyuki Tanaka ◽  
Shunichiro Tanaka
Keyword(s):  
Ion Irradiation ◽  
Ion Beam ◽  
Beam Irradiation ◽  
Ion Beam Irradiation ◽  
Residual Oxygen ◽  
Irradiation Angle ◽  
Oxygen Atoms

Cu2O conical micron-scale protrusions have been grown on a preoxidized Cu surface by the Ar ion beam irradiation at 9 kV for 5-20 min in the low vacuum. This Ar ion irradiation is based on the ‘Transcription Method’ which has been originated by B.-S. Xu and S.-I. Tanaka in 1996 to form nanoparticles. Ar ion irradiation induced needle-like nanostructures composed of Cu2O and CuO which were randomly nucleated on Cu surface by the oxidation at 623 K for 10 min in the air. The obtained Cu2O conical protrusions have a controllable length of up to 14.6 μm with diameter in the range of 0.8 μm by changing the Ar ion irradiation angle to the surface. The mechanism of the formation of the conical protrusions is proposed that Cu atoms on the Cu surface activated and sputtered by the Ar ion irradiation diffuse on the surface of needle-like oxide as nuclei along the Ar ion track and react with residual oxygen atoms to grow the conical Cu2O protrusions.

Controlling the formation of luminescent Si nanocrystals in plasma-enhanced chemical vapor deposited silicon-rich silicon oxide through ion irradiation

2002 ◽  
Vol 91 (5) ◽  
pp. 3236-3242 ◽  
Author(s):  
T. G. Kim ◽  
C. N. Whang ◽  
Yohan Sun ◽  
Se-Young Seo ◽  
Jung H. Shin ◽  
...  
Keyword(s):  
Silicon Oxide ◽  
Ion Irradiation ◽  
Chemical Vapor ◽  
Si Nanocrystals ◽  
Chemical Vapor Deposited

scholarly journals Fabrication of Nanopore in MoS2-Graphene vdW Heterostructure by Ion Beam Irradiation and the Mechanical Performance

Nanomaterials ◽  
2022 ◽  
Vol 12 (2) ◽  
pp. 196
Author(s):  
Xin Wu ◽  
Ruxue Yang ◽  
Xiyue Chen ◽  
Wei Liu
Keyword(s):  
Mechanical Performance ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Tensile Tests ◽  
Uniaxial Tensile ◽  
Beam Irradiation ◽  
Ion Beam Irradiation ◽  
Stacking Order ◽  
Vdw Heterostructure ◽  
Nanopore Structure

Nanopore structure presents great application potential especially in the area of biosensing. The two-dimensional (2D) vdW heterostructure nanopore shows unique features, while research around its fabrication is very limited. This paper proposes for the first time the use of ion beam irradiation for creating nanopore structure in 2D vdW graphene-MoS2 heterostructures. The formation process of the heterostructure nanopore is discussed first. Then, the influence of ion irradiation parameters (ion energy and ion dose) is illustrated, based on which the optimal irradiation parameters are derived. In particular, the effect of stacking order of the heterostructure 2D layers on the induced phenomena and optimal parameters are taken into consideration. Finally, uniaxial tensile tests are conducted by taking the effect of irradiation parameters, nanopore size and stacking order into account to demonstrate the mechanical performance of the heterostructure for use under a loading condition. The results would be meaningful for expanding the applications of heterostructure nanopore structure, and can arouse more research interest in this area.

Amortization and Recrystallization of 6H-SiC by ion Beam Irradiation

1994 ◽  
Vol 339 ◽  
Author(s):  
V. Heera ◽  
R. Kögler ◽  
W. Skorupa ◽  
J. Stoemenos
Keyword(s):  
Ion Irradiation ◽  
Ion Beam ◽  
Surface Region ◽  
Ion Beam Irradiation ◽  
Surface Layers ◽  
Near Surface ◽  
Transmission Electron ◽  
Amorphous Surface ◽  
Amorphous Sic

ABSTRACTThe evolution of the damage in the near surface region of single crystalline 6H-SiC generated by 200 keV Ge+ ion implantation at room temperature (RT) was investigated by Rutherford backscattering spectroscopy/chanelling (RBS/C). The threshold dose for amorphization was found to be about 3 · 1014 cm-2, Amorphous surface layers produced with Ge+ ion doses above the threshold were partly annealed by 300 keV Si+ ion beam induced epitaxial crystallization (IBIEC) at a relatively low temperature of 480°C For comparison, temperatures of at least 1450°C are necessary to recrystallize amorphous SiC layers without assisting ion irradiation. The structure and quality of both the amorphous and recrystallized layers were characterized by cross-section transmission electron microscopy (XTEM). Density changes of SiC due to amorphization were measured by step height measurements.

A study of the critical cluster size for water monolayer clusters on a model AgI basal substratea)

1983 ◽  
Vol 78 (1) ◽  
pp. 420-423 ◽  
Author(s):  
Richard C. Ward ◽  
Barbara N. Hale ◽  
Sergio Terrazas
Keyword(s):  
Cluster Size ◽  
Critical Cluster ◽  
Critical Cluster Size

Photoluminescence enhancement and high accuracy patterning of lead halide perovskite single crystals by MeV ion beam irradiation

2020 ◽  
Vol 8 (29) ◽  
pp. 9923-9930 ◽  
Author(s):  
Milan Palei ◽  
M. Motapothula ◽  
Aniruddha Ray ◽  
Ahmed L. Abdelhady ◽  
Luca Lanzano ◽  
...  
Keyword(s):  
Single Crystals ◽  
Ion Irradiation ◽  
Ion Beam ◽  
High Accuracy ◽  
Enhancement Effect ◽  
Beam Irradiation ◽  
Ion Beam Irradiation ◽  
Photoluminescence Enhancement ◽  
Halide Perovskite ◽  
Lead Halide

Using MeV ion irradiation, a PL enhancement effect of MAPbBr3 single crystals is demonstrated.

scholarly journals Performance of diethylene glycol-based particle counters in the sub-3 nm size range

2013 ◽  
Vol 6 (7) ◽  
pp. 1793-1804 ◽  
Author(s):  
D. Wimmer ◽  
K. Lehtipalo ◽  
A. Franchin ◽  
J. Kangasluoma ◽  
F. Kreissl ◽  
...  
Keyword(s):  
High Resolution ◽  
Laminar Flow ◽  
Nucleation Rate ◽  
Diethylene Glycol ◽  
Cluster Size ◽  
Detection Efficiency ◽  
Working Fluid ◽  
Critical Cluster ◽  
Mixing Ratios ◽  
Critical Cluster Size

Abstract. When studying new particle formation, the uncertainty in determining the "true" nucleation rate is considerably reduced when using condensation particle counters (CPCs) capable of measuring concentrations of aerosol particles at sizes close to or even at the critical cluster size (1–2 nm). Recently, CPCs able to reliably detect particles below 2 nm in size and even close to 1 nm became available. Using these instruments, the corrections needed for calculating nucleation rates are substantially reduced compared to scaling the observed formation rate to the nucleation rate at the critical cluster size. However, this improved instrumentation requires a careful characterization of their cut-off size and the shape of the detection efficiency curve because relatively small shifts in the cut-off size can translate into larger relative errors when measuring particles close to the cut-off size. Here we describe the development of two continuous-flow CPCs using diethylene glycol (DEG) as the working fluid. The design is based on two TSI 3776 counters. Several sets of measurements to characterize their performance at different temperature settings were carried out. Furthermore, two mixing-type particle size magnifiers (PSM) A09 from Airmodus were characterized in parallel. One PSM was operated at the highest mixing ratio (1 L min−1 saturator flow), and the other was operated in a scanning mode, where the mixing ratios are changed periodically, resulting in a range of cut-off sizes. The mixing ratios are determined by varying the saturator flow, where the aerosol flow stays constant at 2.5 L min−1. Different test aerosols were generated using a nano-differential mobility analyser (nano-DMA) or a high-resolution DMA, to obtain detection efficiency curves for all four CPCs. One calibration setup included a high-resolution mass spectrometer (APi-TOF) for the determination of the chemical composition of the generated clusters. The lowest cut-off sizes were achieved with negatively charged ammonium sulfate clusters, resulting in cut-offs of 1.4 nm for the laminar flow CPCs and 1.2 and 1.1 nm for the PSMs. A comparison of one of the laminar-flow CPCs and one of the PSMs measuring ambient and laboratory air showed good agreement between the instruments.

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