scholarly journals Annealing Behavior of The Photoluminescence Lines in CdTe and Znx Cd1−x Te Single Crystals

1989 ◽  
Vol 161 ◽  
Author(s):  
J. Gonzalez-Hernandez ◽  
A. Reyes-Mena ◽  
Elias Lopez-Cruz ◽  
D.D. Allred ◽  
Worth P. Allred
Keyword(s):  
Single Crystals ◽  
Mixed Crystals ◽  
Band Edge ◽  
Near Band Edge ◽  
Band Edge Emission ◽  
Photoluminescence Spectra ◽  
Edge Emission ◽  
Annealing Behavior ◽  
Pl Spectra ◽  
Compositional Range

ABSTRACTThe main lines in the photoluminescence spectra of Zn1Cd1−xTe single crystals grown by a modified Bridgman method in the compositional range of 0 ≤ X ≤ 0.25 have been identified. All crystals show only near-band-edge emission. To assist in the identification, various samples with different compositions were annealed under a Cd atmosphere. In the pure crystals, the prominent (A°,X) bound exciton line, as well as the doublet at longer wavelengths, disappear after the annealing. In contrast, the treatments do not change significantly the PL spectra of the mixed crystals.

The compositional and optical characterizations of InGaAsN alloy semiconductor grown by MOVPE

2002 ◽  
Vol 744 ◽  
Author(s):  
Sakuntam Sanorpim ◽  
Fumihiro Nakajima ◽  
Ryuji Katayama ◽  
Kentaro Onabe ◽  
Yashihiro Shiraki
Keyword(s):  
Room Temperature ◽  
Excitation Power ◽  
Band Edge ◽  
Near Band Edge Emission ◽  
Near Band Edge ◽  
Band Edge Emission ◽  
Optical Investigation ◽  
Edge Emission ◽  
Alloy Films ◽  
Pl Spectra

ABSTRACTWe report on the compositional and optical investigation of InGaAs(N) alloy films grown on GaAs (001) substrates by low-pressure (60 Torr) metalorganic vapor phase epitaxy (MOVPE). The alloy films with the room-temperature photoreflactance (PR) signal (Eo transition) wavelength range of 0.98–1.36 m have been grown. The variation in PL characteristics of the InGaAs(N) alloy films has been investigated as a function of alloy composition, excitation power and temperature. At low temperatures (T<100K), the PL spectra with several sub-peaks include localization emission as well as near-band-edge emission. On the other hand, the room-temperature PL properties for InxGa1-xAs1-yNy (x = 10.5% and 17.0% and y < 2%) are excellent with a single near-band-edge emission peak corresponding to their own Eo transition. The evolution of PL spectra with excitation power and temperature led to an insight into the nature of the near-band-edge states. The temperature dependence of integrated PL intensity indicates the presence of a large density of non-radiative recombination centers, showing a behavior characterized by two activation energies. Our results suggest that the origin of localization in InGaAsN alloy films is the alloy inhomogeneities of both In and N, which may results in the characteristic carrier dynamics.

Stable enhancement of near-band-edge emission of ZnO nanowires by hydrogen incorporation

2010 ◽  
Vol 21 (6) ◽  
pp. 065709 ◽  
Author(s):  
A Dev ◽  
R Niepelt ◽  
J P Richters ◽  
C Ronning ◽  
T Voss
Keyword(s):  
Zno Nanowires ◽  
Band Edge ◽  
Near Band Edge Emission ◽  
Near Band Edge ◽  
Band Edge Emission ◽  
Edge Emission ◽  
Hydrogen Incorporation

Enhancement of the near-band-edge emission of CuI by Cl doping

2019 ◽  
Vol 205 ◽  
pp. 337-341 ◽  
Author(s):  
Fengrui Li ◽  
Mu Gu ◽  
Xiaolin Liu ◽  
Shuangqiang Yue ◽  
Jiajie Zhu ◽  
...  
Keyword(s):  
Band Edge ◽  
Near Band Edge Emission ◽  
Near Band Edge ◽  
Band Edge Emission ◽  
Edge Emission

Enhanced near-band-edge emission from a-plane ZnO thin films on SrTiO3 substrates

2015 ◽  
Vol 121 (1) ◽  
pp. 17-21 ◽  
Author(s):  
Guangheng Wu ◽  
Xiang Li ◽  
Meifeng Liu ◽  
Zhibo. Yan ◽  
Jun-Ming Liu
Keyword(s):  
Thin Films ◽  
Band Edge ◽  
Zno Thin Films ◽  
Near Band Edge Emission ◽  
Near Band Edge ◽  
Band Edge Emission ◽  
Edge Emission

Chemical Vapor Deposition of Porous GaN Particles on Silicon

2012 ◽  
Vol 18 (4) ◽  
pp. 905-911 ◽  
Author(s):  
Joan J. Carvajal ◽  
Oleksandr V. Bilousov ◽  
Dominique Drouin ◽  
Magdalena Aguiló ◽  
Francesc Díaz ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Band Edge ◽  
Near Band Edge ◽  
Band Edge Emission ◽  
Edge Emission ◽  
Si Substrates ◽  
Internal Morphology ◽  
Simple Chemical

AbstractWe present a technique for the direct deposition of nanoporous GaN particles on Si substrates without requiring any post-growth treatment. The internal morphology of the nanoporous GaN particles deposited on Si substrates by using a simple chemical vapor deposition approach was investigated, and straight nanopores with diameters ranging between 50 and 100 nm were observed. Cathodoluminescence characterization revealed a sharp and well-defined near band-edge emission at ∼365 nm. This approach simplifies other methods used for this purpose, such as etching and corrosion techniques that can damage the semiconductor structure and modify its properties.

Liquid‐phase epitaxy of heavily Mg‐doped GaAs: Formation of a new near‐band‐edge emission exclusively pertinent to acceptor impurities

1987 ◽  
Vol 62 (8) ◽  
pp. 3212-3215 ◽  
Author(s):  
Masahiko Mori ◽  
Yunosuke Makita ◽  
Yoshio Okada ◽  
Nobukazu Ohnishi ◽  
Yoshinobu Mitsuhashi ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Band Edge ◽  
Near Band Edge Emission ◽  
Near Band Edge ◽  
Band Edge Emission ◽  
Edge Emission ◽  
Mg Doped

Temperature-dependent shifts of near band-edge emission and their second-order diffraction for ZnO nanorods

2012 ◽  
Vol 34 (11) ◽  
pp. 1917-1920 ◽  
Author(s):  
Jianguo Lv ◽  
Changlong Liu ◽  
Wanbing Gong ◽  
Zhenfa Zi ◽  
Xiaoshuang Chen ◽  
...  
Keyword(s):  
Zno Nanorods ◽  
Second Order ◽  
Band Edge ◽  
Near Band Edge Emission ◽  
Near Band Edge ◽  
Band Edge Emission ◽  
Temperature Dependent ◽  
Edge Emission ◽  
Order Diffraction
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