Measuring Fatigue in PZT Thin Films

1990 ◽  
Vol 200 ◽  
Author(s):  
D. J. Johnson ◽  
D. T. Amm ◽  
E. Griswold ◽  
K. Sreenivas ◽  
G. Yi ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Permittivity ◽  
Dielectric Response ◽  
Remanent Polarization ◽  
Small Signal ◽  
Large Signal ◽  
Pzt Thin Films ◽  
Pzt Thin Film

ABSTRACTSmall signal dielectric response is reported for a variety of PZT thin film samples. Small and large signal responses, recorded simultaneously during the fatiguing of PZT thin films, are used to identify distinct fatigue mechanisms. Microcracking or electrode delamination less than 100 Å is sufficient to explain the high correlation between the dielectric permittivity and remanent polarization during fatigue.

Effect of Annealing Treatment on PZT Thin Fiilm Properties Using Oxygen 18 Depth Profiling Technique

1998 ◽  
Vol 541 ◽  
Author(s):  
F. Ayguavives ◽  
B. Ea-Kim ◽  
B. Agius ◽  
I. Vickridge ◽  
A. I. Kingon
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Plasma Deposition ◽  
Annealing Treatment ◽  
Nuclear Reaction Analysis ◽  
Nominal Composition ◽  
Pzt Thin Films ◽  
Pzt Thin Film ◽  
Metallic Target

AbstractLead zirconate titanate (PZT) thin films have been deposited in a reactive argon/oxygen gas mixture from a metallic target of nominal composition Pb1.1(Zr0.4Ti0.6)O3 by rf magnetron sputtering on Si substrates and RuO2/SiO2/Si structures. During plasma deposition, in situ Optical Emission Spectroscopy (OES) measurements clearly show a correlation between the evolution of characteristic atomic emission line intensities and the thin film composition determined by simultaneous Rutherford Backscattering Spectroscopy (RBS) and Nuclear Reaction Analysis (NRA). As a result, the cathode surface state can be monitored by OES to ensure a good compositional transferability from the target to the film and reproducibility of thin film properties for given values of deposition parameters. Electrical properties and crystallization have been optimized with a 90 nm PZT thin film grown on RuO2 electrodes. These PZT films, annealed with a very modest thermal budget (550°C) are fatigue-free and show very low leakage currents (J=2.10−8 A/cm2 at 1 V). The use of a metallic target allows us to control the oxygen incorporation in the PZT thin film and also, using 18O as a tracer, to study the oxygen vacancy migration which plays a key role in fatigue, leakage current, and electrical degradation/breakdown in PZT thin films.

The Microstructure, Phase and Ferroelectric Properties of PZT Thin Films on Oriented Multilayer Electrodes

1999 ◽  
Vol 596 ◽  
Author(s):  
Tingkai Li ◽  
Sheng Teng Hsu ◽  
Yufei Gao ◽  
Mark Engelhard
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Hysteresis Loop ◽  
Perovskite Phase ◽  
Ferroelectric Properties ◽  
Pyrochlore Phase ◽  
Experimental Results ◽  
Butyl Ether ◽  
Pzt Thin Films ◽  
Pzt Thin Film

AbstractThree kinds of oriented electrodes of Pt, Ir and Pt/Ir electrodes were prepared using electron beam evaporation techniques for deposition of PZT thin films. An oxide MOCVD reactor with liquid delivery system was used for the growth of PZT thin films. [Pb(thd)2], Zr(TMHD)4 and Ti(IPO)4 were dissolved in a mixed solvent of tetrahydrofuran or butyl ether, isopropanol and tetraglyme to form a precursor source. The deposition temperature and pressure were 500 - 650°C and 5 - 10 Torr, respectively. The experimental results showed PZT thin film deposited on various electrodes had different phase formation, microstructure and ferroelectric property. The X-ray patterns showed the perovskite phase of PZT was formed on both Ir and Pt/Ir electrodes at 550°C. The grain size of the PZT thin film increases after a further, higher temperature annealing. The as-deposited PZT thin film on Pt electrode exhibits pyrochlore phase at 550°C. The phase is transformed to perovskite phase after 650°C annealing. The experimental results also indicated that the MOCVD PZT thin film on Pt/Ir exhibits better ferroelectric and electrical properties compared to those deposited on Pt and Ir electrodes. A 300 nm thick PZT thin film on Pt/Ir electrode has a square, well saturated, and symmetrical hysteresis loop with 2Pr value of 40 μC/cm2 and 2Ec of 73 kV/cm at an applied voltage of 5 V. The hysteresis loop of the PZT thin film is almost saturated at 2 V. The leakage current of the film is 6.16 × 10−7 A/cm2 at 100 KV/cm. The electrode effects on ferroelectric properties of PZT thin films also have been investigated.

PZT Thin Films Deposited by RF Magnetron Sputtering

2013 ◽  
Vol 302 ◽  
pp. 8-13
Author(s):  
Shun Fa Hwang ◽  
Wen Bin Li
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Annealing Temperature ◽  
Bottom Electrode ◽  
Rf Sputtering ◽  
Rf Magnetron Sputtering ◽  
Pzt Thin Films ◽  
Pzt Film ◽  
Pzt Thin Film

PZT thin film was fabricated by using RF-sputtering process, and platinum was used as bottom electrodes. The sputtering gases were Ar：O2＝25：0 sccm, Ar：O2＝20：5 sccm, or Ar：O2＝15：10 sccm. After sputtering, the PZT film was annealed for 5 minutes under O2 gas environment and at the temperature of 600 0C, 650 0C, 700 0C or 750 0C. To judge the quality of the deposited PZT film, its physical properties and electric properties were evaluated. The results indicate that the best crystallization temperature of PZT thin film is about 700 0C. Also, the roughness of the PZT thin film becomes larger with the increasing of annealing temperature. By adding more oxygen in the sputtering gas, one could have better crystallization of the PZT film. As for the electrical properties, the leakage current of PZT thin film increases with the increasing of annealing temperature. Furthermore, the ferroelectric property is affected by the crystallization amount of perovskite, the thickness of PZT thin film, and the diffusion situation between the bottom electrode and the PZT film.

Development of Multi-Layered Composite PZT Thin Films for Active Sliders in Hard Disk Drives

2002 ◽  
Author(s):  
Norio Tagawa ◽  
Ken-ichi Kitamura ◽  
Atsunobu Mori
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Sol Gel ◽  
Hard Disk Drives ◽  
Hard Disk ◽  
Layered Composite ◽  
The Novel ◽  
Disk Drives ◽  
Pzt Thin Films ◽  
Pzt Thin Film

This paper describes the development of novel PZT thin films for active sliders in hard disk drives. So far, it is common that single-layered thin films are used as micro-actuators for conventional PZT thin films such as sol-gel or sputtered thin films. In this study, however, the novel composite PZT thin films are developed. The feature is that sol-gel PZT thin film is deposited on sputtered PZT thin film fabricated on Pt/Ti bottom electrode. These multilayered composite PZT thin films are found to have the higher (111) preferred orientation as well as better P-E hysteresis loop characteristics than not only sol-gel PZT thin films but also sputtered PZT thin films. Furthermore, the piezoelectric strain constant d31 for the novel PZT thin films is identified to be 189 × 10−12m/V. This value is 2.0 times higher than that for conventional PZT thin films and it is found that the novel PZT thin films have good piezoelectric properties.

Cost-Effective Measurements of Piezoelectric Coefficient d33 of Thin-Film PZT Using a Mini Force Hammer

2011 ◽  
Author(s):  
Qing Guo ◽  
G. Z. Cao ◽  
I. Y. Shen
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Piezoelectric Coefficient ◽  
New Method ◽  
Specimen Thickness ◽  
Film Material ◽  
Impulsive Force ◽  
Pzt Thin Films ◽  
Aspect Ratios ◽  
Pzt Thin Film

Lead Zirconate Titanate (PbZrxTi1−xO3 or PZT) is a piezoelectric material widely used as sensors and actuators. For microactuators, PZT often appears in the form of thin films to maintain proper aspect ratios. One major challenge encountered is accurate measurement of piezoelectric coefficients of PZT thin films. In this paper, we present a simple, low-cost, and effective method to measure piezoelectric coefficient d33 of PZT thin films through use of basic principles in mechanics of vibration. We use a small impact hammer with a tiny tip to generate an impulsive force acting perpendicularly to the surface of a PZT film. In the meantime, we measure the impulsive force via a load cell and the responding charge of the PZT thin film via a charge amplifier. Then the piezoelectric coefficient d33 is obtained from the measured force and charge based on piezoelectricity and a finite element modeling. We also conduct a thorough parametric study to understand the sensitivity of this method on various parameters, such as substrate material, boundary conditions, specimen size, specimen thickness, thickness ratio, and PZT thin-film material. To demonstrate the feasibility, we calibrate the new method via a PZT thick film disk resonator with a known d33. Experimental results show that d33 measured via this method is as accurate as those from the manufacturer’s specifications within its tolerance. We then apply the new method to PZT thin films deposited on silicon substrate, and successfully measure the corresponding piezoelectric coefficient d33.

scholarly journals Properties of RF-Sputtered PZT Thin Films with Ti/Pt Electrodes

2014 ◽  
Vol 2014 ◽  
pp. 1-5 ◽  
Author(s):  
Cui Yan ◽  
Yao Minglei ◽  
Zhang Qunying ◽  
Chen Xiaolong ◽  
Chu Jinkui ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Residual Stress ◽  
Annealing Temperature ◽  
X Ray Diffraction ◽  
Pzt Thin Films ◽  
X Ray ◽  
Grain Sizes ◽  
Pzt Thin Film ◽  
Average Residual

Effect of annealing temperature and thin film thickness on properties of Pb(Zr0.53Ti0.47)O3(PZT) thin film deposited via radiofrequency magnetron sputtering technique onto Pt/Ti/SiO2/Si substrate was investigated. Average grain sizes of the PZT thin film were measured by atomic force microscope; their preferred orientation was studied through X-ray diffraction analysis. Average residual stress in the thin film was estimated according to the optimized Stoney formula, and impedance spectroscopy characterization was performed via an intelligent LCR measuring instrument. Average grain sizes of PZT thin films were 60 nm~90 nm and their average roughness was less than 2 nm. According to X-ray diffraction analysis, 600°C is the optimal annealing temperature to obtain the PZT thin film with better crystallization. Average residual stress showed that thermal mismatch was the decisive factor of residual stress in Pt/Ti/SiO2/Si substrate; the residual stress in PZT thin film decreased as their thickness increased and increased with annealing temperature. The dielectric constant and loss angle tangent were extremely increased with the thickness of PZT thin films. The capacitance of the device can be adjusted according to the thickness of PZT thin films.

Preparation of sub-100nm Thickness PZT thin Films with Chemical Solution Deposition Method for low Voltage Operation

2000 ◽  
Vol 655 ◽  
Author(s):  
Yong Kyun Lee ◽  
June Key Lee ◽  
Chang Jung Kim ◽  
Insook Yi ◽  
Ilsub Chung
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Seed Layer ◽  
Low Voltage ◽  
Nucleation Density ◽  
Pzt Thin Films ◽  
Chemical Solution Deposition Method ◽  
Low Voltage Operation ◽  
Pzt Thin Film ◽  
Hysteretic Properties

AbstractPZT thin films with a thickness of 70 nm were successfully fabricated using a modified solution combined with PbTiO3 seed layer. Throughout various approaches, we found that the microstructure of PZT thin film plays an important role in determining the electrical properties such as hysteretic properties and leakage currents, particularly when the thickness is below 100 nm. We modified the precursor system to improve the microstructure in PZT thin film. In addition, we also adopted a thin PbTiO3 seed layer to enhance the initial nucleation density. Finally, we could obtain good electric properties similar to those obtained from 240 nm thick PZT film. The hysteretic properties is excellent enough to operate at a low voltage (2V) for a high density FRAM application.

Epitaxial growth of PbZr0.5Ti0.5O3 thin films on SrRuO3/SrTiO3 substrates using chemical solution deposition: Microstructural and ferroelectric properties

2001 ◽  
Vol 16 (6) ◽  
pp. 1739-1744 ◽  
Author(s):  
J. H. Kim ◽  
Youngman Kim ◽  
A. T. Chien ◽  
F. F. Lange
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Chemical Solution Deposition ◽  
Ferroelectric Properties ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Pzt Thin Films ◽  
Chemical Solution Deposition Method ◽  
Pzt Thin Film ◽  
Film Substrate

Epitaxial PbZr0.5Ti0.5O3 (PZT) thin films were grown on top of a SrRuO3 epitaxial electrode layer on a (100) SrTiO3 substrate by the chemical solution deposition method at various temperatures. The microstructure of the PZT thin films was investigated by x-ray diffraction and transmission electron microscopy, and the ferroelectric properties were measured using the Ag/PZT/SRO capacitor structure. In the PZT thin film annealed at low temperature (450 °C/1h), both the perovskite PZT phase at the film/substrate interface and the fluorite PZT phase in the upper region of the film were obtained. It exhibited nonferroelectric properties. The PZT thin film annealed at temperature as low as 525 °C had only a perovskite tetragonal phase and the epitaxial orientational relationship of (001)[010]PZT∥(001)[010]SRO∥(001)[010]STOwith the substrate, and shows a ferroelectric property. The remnant (Pr) and saturation polarization (Ps) density of the sample annealed at 600 °C/1h were measured to be Pr ˜ 51.4 μC/cm2 and Ps ˜ 62.1 μC/cm2 at 5 V, respectively. The net switched polarization dropped only to 98% of its initial value after 7 × 108 fatigue cycles.

Microstructure and Electrical Properties of R.F Magnetron Sputtering Derived PZT Thin Films Deposited on Interlayer for Pyroelectric IR Sensor

2006 ◽  
Vol 510-511 ◽  
pp. 1042-1045
Author(s):  
Chul Ho Park ◽  
Young Gook Son
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Profile Analysis ◽  
Processing Temperature ◽  
Depth Profile Analysis ◽  
Pzt Thin Films ◽  
Pyroelectric Properties ◽  
Pzt Thin Film ◽  
Xps Depth Profile

The PZT thin film was deposited by R.F. Magnetron sputtering with Pb 1.1Zr0.53Ti0.47O3 target. When interlayers were inserted at the between PZT and Pt, The grain growth of the PZT thin films was considerably improved by various interlayers (PbO, TiO2, TiO2/PbO) and had low-processing temperature. Compared to the pure PZT thin films, pyroelectric properties of the PZT thin films inserted by interlayers were relatively measured high value. In particular, PZT thin film deposited on interlayer(PbO) was appeared the best pyroelectric properties (P=189.4μ C/㎠K, FD=12.7×10-6Pa-1/2, FV=0.018㎡/C) respectively. As a result of XPS depth profile analysis, both PZT thin film and interlayers were confirmed as independently existing layer respectively.

Effect on Crystal Orientation on Residual Stress and Electrical Properties of a PZT Thin Film Deposited on Buffered-Si Substrate

2006 ◽  
Vol 320 ◽  
pp. 65-68
Author(s):  
Keisuke Fujito ◽  
Naoki Wakiya ◽  
Takanori Kiguchi ◽  
Nobuyasu Mizutani ◽  
Kazuo Shinozaki
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Electrical Properties ◽  
Tensile Stress ◽  
Remanent Polarization ◽  
Residual Tensile Stress ◽  
Si Substrate ◽  
Pzt Thin Films ◽  
Pzt Film ◽  
Pzt Thin Film

Changes of residual stress and electrical properties were examined in (001)-oriented and (111)-oriented Pb(Zr0.5Ti0.5)O3 (PZT) thin films deposited on a buffered-Si substrate with a buffer and bottom electrode layer of a (La,Sr)CoO3(LSCO). A (001)-epitaxial PZT film was prepared on LSCO/CeO2 /Zr0.85Y0.15O1.93(YSZ)/Si. In addition, a (111)-oriented PZT film was prepared on LSCO/SrTiO3(ST) /Mn0.24Zn0.09Fe2.67O4(MZF)/YSZ/Si. The residual tensile stress in (001)-PZT thin films decreased from 2.92 to 1.98 GPa and the remanent polarization increased from 7.5 to 41.7 @C/cm2 as the LSCO thickness increased. In (111)-PZT, the residual tensile stress decreased from 1.72 to 0.95 GPa and remanent polarization increased from 9.5 to 26.7 @C/cm2. The residual tensile stress of (111)-PZT was less than that of (001)-PZT. The remanent polarization in the 80 nm (111)-PZT was greater than that of the 60 nm (001)-PZT. In the 700-nm-thick PZT, the remanent polarization in (001)-PZT was greater than that in (111)-PZT.

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