The Microstructure, Phase and Ferroelectric Properties of PZT Thin Films on Oriented Multilayer Electrodes

1999 ◽  
Vol 596 ◽  
Author(s):  
Tingkai Li ◽  
Sheng Teng Hsu ◽  
Yufei Gao ◽  
Mark Engelhard
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Hysteresis Loop ◽  
Perovskite Phase ◽  
Ferroelectric Properties ◽  
Pyrochlore Phase ◽  
Experimental Results ◽  
Butyl Ether ◽  
Pzt Thin Films ◽  
Pzt Thin Film

AbstractThree kinds of oriented electrodes of Pt, Ir and Pt/Ir electrodes were prepared using electron beam evaporation techniques for deposition of PZT thin films. An oxide MOCVD reactor with liquid delivery system was used for the growth of PZT thin films. [Pb(thd)2], Zr(TMHD)4 and Ti(IPO)4 were dissolved in a mixed solvent of tetrahydrofuran or butyl ether, isopropanol and tetraglyme to form a precursor source. The deposition temperature and pressure were 500 - 650°C and 5 - 10 Torr, respectively. The experimental results showed PZT thin film deposited on various electrodes had different phase formation, microstructure and ferroelectric property. The X-ray patterns showed the perovskite phase of PZT was formed on both Ir and Pt/Ir electrodes at 550°C. The grain size of the PZT thin film increases after a further, higher temperature annealing. The as-deposited PZT thin film on Pt electrode exhibits pyrochlore phase at 550°C. The phase is transformed to perovskite phase after 650°C annealing. The experimental results also indicated that the MOCVD PZT thin film on Pt/Ir exhibits better ferroelectric and electrical properties compared to those deposited on Pt and Ir electrodes. A 300 nm thick PZT thin film on Pt/Ir electrode has a square, well saturated, and symmetrical hysteresis loop with 2Pr value of 40 μC/cm2 and 2Ec of 73 kV/cm at an applied voltage of 5 V. The hysteresis loop of the PZT thin film is almost saturated at 2 V. The leakage current of the film is 6.16 × 10−7 A/cm2 at 100 KV/cm. The electrode effects on ferroelectric properties of PZT thin films also have been investigated.

Epitaxial growth of PbZr0.5Ti0.5O3 thin films on SrRuO3/SrTiO3 substrates using chemical solution deposition: Microstructural and ferroelectric properties

2001 ◽  
Vol 16 (6) ◽  
pp. 1739-1744 ◽  
Author(s):  
J. H. Kim ◽  
Youngman Kim ◽  
A. T. Chien ◽  
F. F. Lange
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Chemical Solution Deposition ◽  
Ferroelectric Properties ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Pzt Thin Films ◽  
Chemical Solution Deposition Method ◽  
Pzt Thin Film ◽  
Film Substrate

Epitaxial PbZr0.5Ti0.5O3 (PZT) thin films were grown on top of a SrRuO3 epitaxial electrode layer on a (100) SrTiO3 substrate by the chemical solution deposition method at various temperatures. The microstructure of the PZT thin films was investigated by x-ray diffraction and transmission electron microscopy, and the ferroelectric properties were measured using the Ag/PZT/SRO capacitor structure. In the PZT thin film annealed at low temperature (450 °C/1h), both the perovskite PZT phase at the film/substrate interface and the fluorite PZT phase in the upper region of the film were obtained. It exhibited nonferroelectric properties. The PZT thin film annealed at temperature as low as 525 °C had only a perovskite tetragonal phase and the epitaxial orientational relationship of (001)[010]PZT∥(001)[010]SRO∥(001)[010]STOwith the substrate, and shows a ferroelectric property. The remnant (Pr) and saturation polarization (Ps) density of the sample annealed at 600 °C/1h were measured to be Pr ˜ 51.4 μC/cm2 and Ps ˜ 62.1 μC/cm2 at 5 V, respectively. The net switched polarization dropped only to 98% of its initial value after 7 × 108 fatigue cycles.

Post-Processing of Pulsed Laser-Deposited Pzt Thin Films

1991 ◽  
Vol 243 ◽  
Author(s):  
C. K. Chiang ◽  
W. Wong-Ng ◽  
L. P. Cook ◽  
P. K. Schenck ◽  
H. M. Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Amorphous Material ◽  
Ferroelectric Properties ◽  
Pulsed Laser ◽  
Linear Shrinkage ◽  
Laser Deposition ◽  
Amorphous Films ◽  
Pzt Thin Films ◽  
Si Substrates ◽  
Pzt Thin Film

AbstractPZT thin films were prepared by pulsed laser deposition on unheated Ptcoated Si substrates. As deposited, the films were amorphous. Films crystallized at 550 - 600 °C to produce predominantly crystalline ferroelectric PZT. Crystallization of the amorphous material was accompanied by a linear shrinkage of ∼2 %, as manifested in development of cracks in the film. Spacing, width and morphology of larger cracks followed a regular progression with decreasing film thickness. For film thicknesses less than 500 runm, much of the shrinkage was taken up by small, closely-spaced cracks of local extent. Implications for measurement of PZT thin film ferroelectric properties and processing are discussed.

Ferroelectric Property of Ion Beam Enhanced Deposited Lithium Tantalate Thin Film

2011 ◽  
Vol 335-336 ◽  
pp. 1418-1423
Author(s):  
De Yin Zhang ◽  
Wei Qian ◽  
Kun Li ◽  
Jian Sheng Xie
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Morphology ◽  
Hysteresis Loop ◽  
Ferroelectric Property ◽  
Ion Beam ◽  
Ferroelectric Properties ◽  
Fatigue Property ◽  
Lithium Tantalate ◽  
Electric Filed

The Ion Beam Enhanced Deposited (IBED) lithium tantalate (LiTaO3) thin film samples with Al/LiTaO3/Pt electrode structure were prepared on the Pt/Ti/SiO2/Si(100) and SiO2/Si(100) substrate respectively. The crystallization, surface morphology, ferroelectric property, and fatigue property of the prepared samples with the different annealed processes were investigated. The XRD measured results show that the prepared samples have the polycrystal structure of LiTaO3 with the preferred orientation of <012> and <104> located at the 2θ of 23.60 and 32.70 respectively. The SEM morphology analysis reveals the prepared film annealed at 550°C is uniform, smooth and crack-free on the surface and cross section. The ferroelectric property measured results show that the remanent polarization Pr of the samples annealed at different temperature almost increase with the electric field intensity stronger. The leakage current makes the hysteresis loop of the samples subjected to a strong measured electric filed difficult to appear the same saturation hysteresis loop as the single-crystal LiTaO3. The prepared samples annealed at 550°C have a Pr value of 11.5μC/cm2 when subjected to the electrical field of 400kV/cm. The breakdown voltage of the 587nm thick thin film sample is high as to 680 kV/cm. The fatigue property measured results show only 15.17% Pr drop of the prepared films annealed at 550°C appear after 5×1010 cycles polarized by the 10MHz sinusoidal signal with the peak-to-peak amplitude of 10 Volt. The ferroelectric properties of the prepared films meet the practical application requirements of charge response measurement of the LiTaO3 infrared detector owe to the Pr of the prepared films annealed at different temperature large beyond 10μC/cm2 when the prepared films subjected to a strong electric filed larger than 400 kV/cm. The experimental results also show that the surface morphology, the ferroelectric and fatigue properties of the IBED LiTaO3 thin films are significant better than those of the Sol-Gel derived LiTaO3 thin films.

Effect of Pb Content on the Fatigue Properties of D.C. Reactive Sputtering-Derived PZT Thin Films

2006 ◽  
Vol 326-328 ◽  
pp. 613-616
Author(s):  
Dae Jin Yang ◽  
Seong Je Cho ◽  
Jong Oh Kim ◽  
Won Youl Choi
Keyword(s):  
Lead Zirconate Titanate ◽  
Perovskite Phase ◽  
Fatigue Behavior ◽  
Ferroelectric Properties ◽  
Pyrochlore Phase ◽  
Reactive Sputtering ◽  
Lead Zirconate ◽  
Fatigue Properties ◽  
Pzt Thin Films ◽  
Pzt Films

Lead zirconate titanate (Pb(Zr0.48Ti0.52)O3 or PZT) films were grown on platinized silicon wafers (Pt/SiO2/Si) by d.c. reactive sputtering method with multi targets. The Pb content of PZT films has been widely recognized as affecting not only the phase formation and microstructure but also the dielectric and ferroelectric properties. Pb content of PZT films was controlled by the variation of Pb target current. The relation between Pb content and Pb target current was expressed as y=0.89x-11.09. The x and y are Pb target current and Pb content, respectively. The pyrochlore phase was transformed to perovskite phase as Pb content was increased. This phase transformation improved the ferroelectric properties of PZT films. In PZT films with perovskite phase, fatigue properties were not improved with excess Pb content. Fatigue properties of PZT films began to be fatigued after 106 switching cycles and coincided with the typical PZT fatigue behavior. Excess Pb content (Pb vacancy) did not affect the fatigue properties of PZT films.

Effect of Annealing Treatment on PZT Thin Fiilm Properties Using Oxygen 18 Depth Profiling Technique

1998 ◽  
Vol 541 ◽  
Author(s):  
F. Ayguavives ◽  
B. Ea-Kim ◽  
B. Agius ◽  
I. Vickridge ◽  
A. I. Kingon
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Plasma Deposition ◽  
Annealing Treatment ◽  
Nuclear Reaction Analysis ◽  
Nominal Composition ◽  
Pzt Thin Films ◽  
Pzt Thin Film ◽  
Metallic Target

AbstractLead zirconate titanate (PZT) thin films have been deposited in a reactive argon/oxygen gas mixture from a metallic target of nominal composition Pb1.1(Zr0.4Ti0.6)O3 by rf magnetron sputtering on Si substrates and RuO2/SiO2/Si structures. During plasma deposition, in situ Optical Emission Spectroscopy (OES) measurements clearly show a correlation between the evolution of characteristic atomic emission line intensities and the thin film composition determined by simultaneous Rutherford Backscattering Spectroscopy (RBS) and Nuclear Reaction Analysis (NRA). As a result, the cathode surface state can be monitored by OES to ensure a good compositional transferability from the target to the film and reproducibility of thin film properties for given values of deposition parameters. Electrical properties and crystallization have been optimized with a 90 nm PZT thin film grown on RuO2 electrodes. These PZT films, annealed with a very modest thermal budget (550°C) are fatigue-free and show very low leakage currents (J=2.10−8 A/cm2 at 1 V). The use of a metallic target allows us to control the oxygen incorporation in the PZT thin film and also, using 18O as a tracer, to study the oxygen vacancy migration which plays a key role in fatigue, leakage current, and electrical degradation/breakdown in PZT thin films.

PZT Thin Films Deposited by RF Magnetron Sputtering

2013 ◽  
Vol 302 ◽  
pp. 8-13
Author(s):  
Shun Fa Hwang ◽  
Wen Bin Li
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Annealing Temperature ◽  
Bottom Electrode ◽  
Rf Sputtering ◽  
Rf Magnetron Sputtering ◽  
Pzt Thin Films ◽  
Pzt Film ◽  
Pzt Thin Film

PZT thin film was fabricated by using RF-sputtering process, and platinum was used as bottom electrodes. The sputtering gases were Ar：O2＝25：0 sccm, Ar：O2＝20：5 sccm, or Ar：O2＝15：10 sccm. After sputtering, the PZT film was annealed for 5 minutes under O2 gas environment and at the temperature of 600 0C, 650 0C, 700 0C or 750 0C. To judge the quality of the deposited PZT film, its physical properties and electric properties were evaluated. The results indicate that the best crystallization temperature of PZT thin film is about 700 0C. Also, the roughness of the PZT thin film becomes larger with the increasing of annealing temperature. By adding more oxygen in the sputtering gas, one could have better crystallization of the PZT film. As for the electrical properties, the leakage current of PZT thin film increases with the increasing of annealing temperature. Furthermore, the ferroelectric property is affected by the crystallization amount of perovskite, the thickness of PZT thin film, and the diffusion situation between the bottom electrode and the PZT film.

Measuring Fatigue in PZT Thin Films

1990 ◽  
Vol 200 ◽  
Author(s):  
D. J. Johnson ◽  
D. T. Amm ◽  
E. Griswold ◽  
K. Sreenivas ◽  
G. Yi ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Permittivity ◽  
Dielectric Response ◽  
Remanent Polarization ◽  
Small Signal ◽  
Large Signal ◽  
Pzt Thin Films ◽  
Pzt Thin Film

ABSTRACTSmall signal dielectric response is reported for a variety of PZT thin film samples. Small and large signal responses, recorded simultaneously during the fatiguing of PZT thin films, are used to identify distinct fatigue mechanisms. Microcracking or electrode delamination less than 100 Å is sufficient to explain the high correlation between the dielectric permittivity and remanent polarization during fatigue.

The role of excess Pb and PbO overpressure on the microstructural development in polycrystalline PZT thin films

1994 ◽  
Vol 52 ◽  
pp. 582-583
Author(s):  
M. J. Lefevre ◽  
D. B. Dimos ◽  
J. S. Speck
Keyword(s):  
Thin Films ◽  
Data Storage ◽  
Perovskite Phase ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Pyrochlore Phase ◽  
Optical Data Storage ◽  
Optical Data ◽  
Microstructural Development

Ferroelectric thin films have recently received considerable attention because of their potential in a range of device applications including both volatile and non-volatile memories, optical data storage, and other electrooptic applications (e.g. waveguides, switches, and modulators). The Pb-based perovskites, such as Pb(Zr,Ti)O3, have many properties that make them attractive for such applications because of their high switchable remanant polarization. In addition, many applications require integration of the ferroelectric with semiconductors. In our work we are studying the crystallization sequence of PZT 40/60 (PbZr0.40Ti0.60O3) grown on platinized silicon substrates, with an overall structure given as PZT/Pt/Ti/SiO2Si. The Ti and Pt are sequentially evaporated onto the oxidized Si substrate. Alkoxide-derived films are spun onto these substrates to form a dry amorphous gel2. The crystallization of the sol-gel film proceeds upon heating to temperatures in the range of 400-700°C. Lead volatility is one of the critical issues in the crystallization of Pb-based perovskite thin films. We have carried out a systematic study on the role of a lead atmosphere in crystallization for PZT (40/60). When heat treated the film forms a transitory pyrochlore phase at intermediate temperatures before transforming to the perovskite phase. This non-ferroelectric pyrochlore phase may stabilize if lead stoichiometry is not maintained, leading to poor optical and ferroelectric properties in the thin films.

Development of Multi-Layered Composite PZT Thin Films for Active Sliders in Hard Disk Drives

2002 ◽  
Author(s):  
Norio Tagawa ◽  
Ken-ichi Kitamura ◽  
Atsunobu Mori
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Sol Gel ◽  
Hard Disk Drives ◽  
Hard Disk ◽  
Layered Composite ◽  
The Novel ◽  
Disk Drives ◽  
Pzt Thin Films ◽  
Pzt Thin Film

This paper describes the development of novel PZT thin films for active sliders in hard disk drives. So far, it is common that single-layered thin films are used as micro-actuators for conventional PZT thin films such as sol-gel or sputtered thin films. In this study, however, the novel composite PZT thin films are developed. The feature is that sol-gel PZT thin film is deposited on sputtered PZT thin film fabricated on Pt/Ti bottom electrode. These multilayered composite PZT thin films are found to have the higher (111) preferred orientation as well as better P-E hysteresis loop characteristics than not only sol-gel PZT thin films but also sputtered PZT thin films. Furthermore, the piezoelectric strain constant d31 for the novel PZT thin films is identified to be 189 × 10−12m/V. This value is 2.0 times higher than that for conventional PZT thin films and it is found that the novel PZT thin films have good piezoelectric properties.

scholarly journals Robust ferroelectricity enhancement of PZT thin films by a homogeneous seed layer

2021 ◽  
Author(s):  
jie jiang ◽  
Lei Liu ◽  
Kuo Ouyang ◽  
Zhouyu Chen ◽  
Shengtao Mo ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Remanent Polarization ◽  
Perovskite Phase ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Pzt Thin Films ◽  
Large Dielectric Constant ◽  
Sol Gel Process ◽  
A New Technique

Abstract With its excellent ferroelectric properties such as large dielectric constant and large remanent polarization, PZT thin films are extensively used in micro-sensors and other devices. In this study, the sol-gel process was used to fabricate Pb(Zr0.52Ti0.48)O3 thin films with Pb(ZrxTi1−x)O3 seed islands. The experimental consequences demonstrate that all the Pb(Zr0.52Ti0.48)O3 thin films with Pb(ZrxTi1−x)O3 seeds show pure perovskite phase with no other impurity phases, and the electrical properties of Pb(Zr0.52Ti0.48)O3 thin films modified by Pb(ZrxTi1−x)O3 seed islands with different Zr/Ti ratios are improved, such as remanent polarization increased, dielectric properties increased, coercive electric field decreased, leakage current density decreased, etc. In particular, the electrical properties of the Pb(Zr0.52Ti0.48)O3 thin films with Pb(ZrxTi1−x)O3 seed islands are the most optimal when the x is 0.52. This paper provides a new technique for optimizing the electrical properties of PZT thin films, which is of great significance for breaking through the bottleneck of the development of ferroelectric memory.

Sign in / Sign up

Export Citation Format

Share Document