Selective Surface Modification of a Fluorocarbon Resin Into Hydrophilic Material Using an Excimer Laser

AbstractSelective surface modification of fluorocarbon resin has been demonstrated by using an ArF excimer laser beam and an ammonia complex which was made from NH3 and B2H6 gases. The fluorocarbon resin was set in the atmosphere of NH3 gas. NH3 molecules which were adsorbed on the surface reacted quickly with the B2H6 molecules, and an ammonia complex was produced. As a result, the complex was adsorbed on the surface. The resin surface was selectively irradiated by ArF laser beam. The complex and C-F bonds of this resin were excited by the laser beam, and the surface was selectively modified to be hydrophilic property. The modified samples were evaluated by XPS analysis, measuring the contact angles of the water and the SEM image on the surface.

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Growth of Silicon Films Onto Fluororesin Surface by ArF Excimer Laser

MRS Proceedings ◽

10.1557/proc-334-87 ◽

1993 ◽

Vol 334 ◽

Cited By ~ 1

Author(s):

T. Miyokawa ◽

M. Okoshi ◽

K. Toyoda ◽

M. Murahara

Keyword(s):

Surface Roughness ◽

Surface Modification ◽

Excimer Laser ◽

High Density ◽

Silicon Films ◽

Chemical Compositions ◽

Xps Analysis ◽

Modification Process ◽

Arf Excimer Laser ◽

Mixed Gases

AbstractSilicon films were deposited on a fluororesin surface. The process was divided into two steps: surface modification process and silicon CVD onto the modified parts. In the modification process, SiH4 and B(CH3)3 mixed gases were used with ArF excimer laser. Fluorine atoms of the surface were pulled out by boron atoms which were photo—dissociated from B(CH3)3 and were replaced with silicon atoms released from SiH4. In the CVD process, SiH4 gas was used with high—density excited ArF excimer laser. Silicon films were deposited onto the nuclei by photodecomposition of SiH4.Chemical compositions of the modified layers and the deposited parts were inspected by XPS analysis. 1000 Å thickness of the deposited silicon films was confirmed by the surface roughness interference–meter.

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High Resolution Displacement of Functional Groups onto Fluorocarbon Resin Surface by Using ArF Excimer Laser

MRS Proceedings ◽

10.1557/proc-451-521 ◽

1996 ◽

Vol 451 ◽

Cited By ~ 1

Author(s):

T. Shimizu ◽

M. Murahara

Keyword(s):

Contact Angle ◽

High Resolution ◽

Laser Beam ◽

Thin Layer ◽

Functional Groups ◽

Excimer Laser ◽

Laser Fluence ◽

Large Area ◽

Three Solutions ◽

Arf Excimer Laser

ABSTRACTA Fluorocarbon resin surface was selectively modified by irradiation with a ArF laser beam through a thin layer of NaAlO2, B(OH)3, or H2O solution to give a hydrophilic property. As a result, with low fluence, the surface was most effectively modified with the NaAlO2 solution among the three solutions. However, the contact angle in this case changed by 10 degrees as the fluence changed only 1mJ/cm2. When modifying a large area of the surface, high resolution displacement could not be achieved because the laser beam was not uniform in displacing functional groups. Thus, the laser fluence was successfully made uniform by homogenizing the laser beam; the functional groups were replaced on the fluorocarbon resin surface with high resolution, which was successfully modified to be hydrophilic by distributing the laser fluence uniformly.

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Linear-Focused ArF Excimer Laser Beam for Depositing Hydrogenated Silicon Films

Springer Series in Chemical Physics - Laser Processing and Diagnostics ◽

10.1007/978-3-642-82381-7_33 ◽

1984 ◽

pp. 252-256 ◽

Cited By ~ 8

Author(s):

M. Murahara ◽

K. Toyoda

Keyword(s):

Laser Beam ◽

Excimer Laser ◽

Silicon Films ◽

Hydrogenated Silicon ◽

Arf Excimer Laser

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Photochemical modification of polytetrafluoroethylene into oleophilic property using an ArF excimer laser

Journal of Materials Research ◽

10.1557/jmr.1992.1912 ◽

1992 ◽

Vol 7 (7) ◽

pp. 1912-1916 ◽

Cited By ~ 49

Author(s):

M. Okoshi ◽

M. Murahara ◽

K. Toyoda

Keyword(s):

Excimer Laser ◽

Polymer Surface ◽

Contact Angle Measurement ◽

Angle Measurement ◽

Photochemical Reactions ◽

Xps Analysis ◽

Spectrum Measurement ◽

Arf Excimer Laser ◽

The Stability ◽

Photochemical Modification

Photochemical modification of the polytetrafluoroethylene (PTFE) with incorporation of the CH3 radical released from the B(CH3)3 molecule excited by an ArF excimer laser has been demonstrated. The incorporation of CH3 radicals and the depletion of fluorine atoms of the polymer surface were studied by XPS analysis and infrared ATR spectrum measurement. In these photochemical reactions, the photoirradiated surface changed into oleophilic. The properties were studied by contact angle measurement. The stability of the oleophilic surface was examined at the elevated temperature of 200 °C for 6 h in O2 or N2 ambient and also by immersing in alkaline or acid water solutions.

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Selective Surface Modification of Fluorocarbon Resin Using Excimer Laser

MRS Proceedings ◽

10.1557/proc-158-33 ◽

1989 ◽

Vol 158 ◽

Cited By ~ 12

Author(s):

M. Okoshi ◽

M. Murahara ◽

K. Toyoda

Keyword(s):

Excimer Laser ◽

Chemical Resistance ◽

Raw Materials ◽

The Other ◽

Methyl Radicals ◽

Selective Area ◽

Arf Excimer Laser ◽

Arf Laser ◽

Selective Surface Modification ◽

Stable Material

ABSTRACTThe fluorocarbon resin (Teflon) which is a very stable material chemically, has chemical resistance. Because of this property, it has no affinity for oil or water. Therefore, we have tried selective area modification of the resin surface b-y using an excimer laser.Fluorocarbon resin is a polymer of C-F bonds. In our experiment, the resin surface was irradiated by an ArF excimer laser, of which the photon energy is higher than that of the C-F bond, to excite the strong C-F bonds. B radicals, the best combination for F atoms, were formed simultaneously. Consequently, F atoms of C-F bonds were pulled out by B radicals. B(CH3 )3 with absorption in agreement with the wavelength of the ArF laser were used as raw materials of the B radicals. By irradiating the gas by the ArF laser beam, the photodecomposed B radicals functioned by pulling out F atoms, and the other methyl radicals ( -CH3 ) substituted for F atoms. As the result, this resin surface turned out to be oleophilic exclusively on the areas exposed to the light.

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Fine Striae Forming on Synthetic Silica Glass by ArF Excimer Laser Beam Irradiation.

Journal of the Japan Society for Precision Engineering ◽

10.2493/jjspe.64.121 ◽

1998 ◽

Vol 64 (1) ◽

pp. 121-125 ◽

Cited By ~ 1

Author(s):

Kenichiro OHSAWA ◽

Hitoshi TOKURA

Keyword(s):

Laser Beam ◽

Excimer Laser ◽

Silica Glass ◽

Beam Irradiation ◽

Laser Beam Irradiation ◽

Arf Excimer Laser

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High Selective Etching of SiO2/Si by ArF Excimer Laser

MRS Proceedings ◽

10.1557/proc-334-439 ◽

1993 ◽

Vol 334 ◽

Cited By ~ 2

Author(s):

K. Kitamura ◽

M. Murahara

Keyword(s):

Laser Beam ◽

Excimer Laser ◽

Wavelength Region ◽

Chemical Behavior ◽

Mixed Gas ◽

Reaction Cell ◽

Si Substrates ◽

Excimer Laser Irradiation ◽

Arf Excimer Laser ◽

Uv Absorption Spectrum

AbstractDry etching of SiO2 insulation layer has been required in the Si semiconductor manufacturing process. The etching of SiO2/Si is chemically carried out by using HF solution. We successfully demonstrated a new method for exclusive etching of SiO2 using the nitrosyle fluoride (NFO) gas which was produced from the mixed gas of NF3 and O2 with an ArF excimer laser irradiation.SiO2 and Si substrates were placed side by side in a reaction cell which was filled with 3% O2 gas in NF3 at the gas pressure of 380 Torr. ArF excimer laser beam was irradiated parallel to the substrates. The laser fluence was kept at lOOmJ/cm2. As soon as the mixed gas of NF3 and O2 was irradiated with the ArF laser beam, an intermediate product of NFO was produced. The chemical behavior of NFO was confirmed from the UV absorption spectrum with absorption in the 310 to 330nm wavelength region. In the presence of SiO2, the absorption of NFO diminished. The absorption of NO2, instead of NFO, appeared at 350nm. This indicates that the oxygen atoms of SiO2 were pulled out by NFO.The etching reactions continued for 3 minutes after irradiation when the SiO2 and Si substrates were kept in an atmosphere of the reactant gases. As a result, not the Si but SiO2 substrate was etched with the depth of 2000Å.

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