Evolution of Semiconductor Thin Film and Surface Microstructure During Ion Bombardment

1990 ◽  
Vol 202 ◽  
Author(s):  
H. A. Atwater
Keyword(s):  
Thin Films ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Amorphous Layer ◽  
Misfit Strain ◽  
Crystal Nucleation ◽  
Microstructural Development ◽  
Complete Suppression ◽  
Semiconductor Films ◽  
Interface Motion

ABSTRACTDefects created by ion irradiation can enable new modes of microstructural development at interfaces and surfaces in semiconductor thin films. Two examples are described. First, novel kinetic paths for microstructural evolution via MeV ion beam modification of amorphous-crystal interface motion in Si are discussed. At intermediate temperatures, amorphous layer formation is initiated at interfaces such as surfaces and grain boundaries in polycrystalline Si. Irradiation at higher temperatures during the early stages of Si crystallization leads to a significant enhancement of the crystal nucleation rate, while nearly complete suppression of crystal nucleation during crystal growth can be achieved by a cyclic irradiation-induced amorphization and thermal growth process. Second, a new development in misfit strain accommodation in epitaxial semiconductor films is described in which ion-induced injection of point defect complexes can produce coherent, uniformly strained epitaxial thin films. Measurement of strain in epitaxial films can be used to distinguish between surface and sub-surface atomic displacements generated by a low energy ion beam.

The microstructure of continuously processed Yba2Cu3Oy coated conductors with underlying CeO2 and ion-beam-assisted yttria-stabilized zirconia buffer layers

2000 ◽  
Vol 15 (5) ◽  
pp. 1110-1119 ◽  
Author(s):  
T. G. Holesinger ◽  
S. R. Foltyn ◽  
P. N. Arendt ◽  
H. Kung ◽  
Q. X. Jia ◽  
...  
Keyword(s):  
Interfacial Reaction ◽  
Ion Beam ◽  
Misfit Strain ◽  
Critical Currents ◽  
Coated Conductors ◽  
Yttria Stabilized Zirconia ◽  
Buffer Layers ◽  
Inconel 625 ◽  
Microstructural Development ◽  
Stabilized Zirconia

The microstructural development of YBa2Cu3Oy (Y-123) coated conductors based on the ion-beam-assisted deposition (IBAD) of yttria-stabilized zirconia (YSZ) to produce a biaxially textured template is presented. The architecture of the conductors was Y-123/CeO2/IBAD YSZ/Inconel 625. A continuous and passivating Cr2O3 layer forms between the YSZ layer and the Inconel substrate. CeO2 and Y-123 are closely lattice-matched, and misfit strain is accommodated at the YSZ/CeO2 interface. Localized reactions between the Y-123 film and the CeO2 buffer layer result in the formation of BaCeO3, YCuO2, and CuO. The positive volume change that occurs from the interfacial reaction may act as a kinetic barrier that limits the extent of the reaction. Excess copper and yttrium generated by the interfacial reaction appear to diffuse along grain boundaries and intercalate into Y-123 grains as single layers of the Y-247, Y-248, or Y-224 phases. The interfacial reactions do not preclude the attainment of high critical currents (Ic) and current densities (Jc) in these films nor do they affect to any appreciable extent the nucleation and alignment of the Y-123 film.

Ion Beam Induced Amorphization and Crystallization Processes in Silicon and GaAs

1986 ◽  
Vol 74 ◽  
Author(s):  
R. G. Elliman ◽  
J. S. Williams ◽  
S. T. Johnson ◽  
E. Nygren
Keyword(s):  
Crystal Growth ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Amorphous Layer ◽  
Poor Quality ◽  
Layer By Layer ◽  
Epitaxial Crystallization ◽  
Non Linear ◽  
Thickness Layer

AbstractThin amorphous layers in crystalline Si and GaAs substates have been irradiated at selected temperatures with 1.5 MeV Ne+ ions to induce either epitaxial crystallization or amorphization. In Si, such irradiation can induce complete epitaxial crystallization of a 1000 A surface amorphous layer for temperatures typically >200°C whereas, at significantly lower temperatures, layer-by-layer amorphization results. Although epitaxial crystallization can also be stimulated in GaAs by ion irradiation at temperatures >65°C, the process is non-linear with ion dose and results in poor quality crystal growth for amorphous layers greater than a few hundred Angstroms in thickness. Layer-by-layer amorphization has not been observed in GaAs.

Structure-Property Relationship of Ion-Beam Sputtered Nd-Fe-B Magnetic Thin Films On (111) Silicon

1994 ◽  
Vol 354 ◽  
Author(s):  
Anthony S. Nazareth ◽  
Harsh Deep Chopra ◽  
D. K. Sood ◽  
R. B. Zmood
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Magnetic Thin Films ◽  
Misfit Strain ◽  
Crystallographic Structure ◽  
Nominal Composition ◽  
Structure Property ◽  
X Ray Diffraction ◽  
Relationship Of

AbstractA focussing grid broad beam Kaufman source, using argon ions on a target of nominal composition Nd2Fei4B has been employed to sputter deposit magnetic thin films of thicknesses ranging from 800 â to 1300 â on silicon-(lll) substrates at room temperature. These films were characterised for their composition depth profile by Rutherford Backscattering Spectroscopy, while x-ray diffraction was used to study the crystallographic structure. Due to a close match between (111) Si with (220) Nd2Fej4B lattice spacings, preferred crystallographic texturing was expected, and experimental results showed a greatly enhanced (220) texture. The degradation in magnetic properties was attributed to the presence of oxygen in the films as indicated by concentration depth profiles. It is premised that another significant role of oxygen may be to relieve the misfit strain across the interface by its incorporation within the Nd2Fej4B phase.

Microstructural Development in Ion Beam Deposited Superconducting YBa2Cu3O7-x and Bi-Ca-Sr-Cu-O Thin Films

1989 ◽  
pp. 571-574
Author(s):  
Alan B. Harker ◽  
J. F. DeNatale ◽  
P. H. Kobrin ◽  
I. S. Gergis
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Microstructural Development

Low Temperature Epitaxial Growth of AlN & GaN Thin Films by the Method of Ion Beam Assisted Deposition

1995 ◽  
Vol 395 ◽  
Author(s):  
Ig-Hyeon Kim ◽  
Chan-Wook Jeon ◽  
Seon-Hyo Kim
Keyword(s):  
Low Temperature ◽  
Epitaxial Growth ◽  
Sapphire Substrate ◽  
Ion Beam ◽  
Grazing Incidence ◽  
Amorphous Layer ◽  
Misfit Strain ◽  
Epitaxial Layers ◽  
Ion Beam Assisted Deposition ◽  
High Resolution Tem

ABSTRACTThe epitaxial layers of AIN and GaN were grown on Si and Sapphire substrate at a relatively low temperature of around 500 °C using the process of reactive ion beam assisted deposition. The optimum ion beam energy for epitaxial growth of AIN and GaN films was found to be about 50 eV. Characterization of the epitaxial layers was carried out by GID (Grazing-Incidence x-ray Diffraction) and high resolution TEM observation. The orientational relations between epitaxial layer and substrate were determined through these analysis. Very thin amorphous layers were observed at the interfaces of bom AIN and GaN films grown on Si(111) substrate, whereas the films grown on Sapphire substrate has no amorphous layer. The amorphous layer may act as a buffer layer enabling the growth of the epitaxial layers of AIN and GaN by relaxing the misfit strain in the early growing stage.

Nitrogen‐ion irradiation during the deposition of C1−xNx thin films by ion beam sputtering technique

1996 ◽  
Vol 14 (3) ◽  
pp. 777-780 ◽  
Author(s):  
Satoshi Kobayashi ◽  
Keiko Miyazaki ◽  
Shinji Nozaki ◽  
Hiroshi Morisaki ◽  
Shigeo Fukui ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Beam Sputtering ◽  
Nitrogen Ion

scholarly journals A Comparison of Modifications Induced by Li3+and Ag14+Ion Beam in Spectroscopic Properties of Bismuth Alumino-Borosilicate Glass Thin Films

2013 ◽  
Vol 2013 ◽  
pp. 1-11 ◽  
Author(s):  
Ravneet Kaur ◽  
Surinder Singh ◽  
Om Prakash Pandey
Keyword(s):  
Thin Films ◽  
Borosilicate Glass ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Glass Network ◽  
Spectroscopic Properties ◽  
Optical Parameters ◽  
Spectroscopic Techniques ◽  
Structural And Optical Properties ◽  
Before And After

Ion irradiation effects on the glass network and structural units have been studied by irradiating borosilicate glass thin film samples with 50 MeV Li3+and 180 MeV Ag14+swift heavy ions (SHI) at different fluence rates ranging from 1012 ions/cm2to 1014 ions/cm2. Glass of the composition (65-x) Bi2O3-10Al2O3-(65-y) B2O3-25SiO2(x= 45, 40;y= 20, 25) has been prepared by melt quench technique. To study the effects of ionizing radiation, the glass thin films have been prepared from these glasses and characterized using XRD, FTIR, and UV-Vis spectroscopic techniques. IR spectra are used to study the structural arrangements in the glass before and after irradiation. The values of optical band gap, Urbach energy, and refractive index have been calculated from the UV-Vis measurements. The variation in optical parameters with increasing Bi2O3content has been analyzed and discussed in terms of changes occurring in the glass network. A comparative study of the influence of Li3+ion beam on structural and optical properties of the either glass system with Ag14+ion is done. The results have been explained in the light of the interaction that SHI undergo on entering the material.

Ion-Beam-Induced Silicide Formation in Nickel Thin Films on Silicon

1982 ◽  
Vol 18 ◽  
Author(s):  
L. J. Chen ◽  
C. Y. Hou
Keyword(s):  
Thin Films ◽  
Driving Force ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Amorphous Layer ◽  
Critical Value ◽  
Silicide Formation ◽  
Nickel Thin Films ◽  
Transmission Electron ◽  
Post Implantation

As+-ion-induced silicide formation in nickel thin films on silicon was investigated by Rutherford backscattering spectrometry and transmission electron microscopy. The emphasis was on the study of ion-beam-induced microstructural changes.For 160 keV As+ implantation, amorphization of the interface occurred at a dose of 5 × 1014 cm−2. Ni2Si was found together with an amorphous layer after a 1 × 1015 cm−2 bombardment. For Ni/Si(100) the surface layer became completely amorphous after implantation to 5×1015 cm−2. Silicides were found after a 1×1016 cm−2 irradiation. The amorphous layer was not stable enough to withstand the enormous chemical driving force causing the formation of crystalline silicides as the composition ratio Nsi/NNi reached a critical value. A similar trend for ion-beam-induced reactions was found for 190 keV As+ implantation on Ni/Si(111) as for 160 keV implantation.The results of post-implantation annealing showed major differences from those obtained for directly annealed samples.

Study of Swift Heavy Ion Irradiation Induced Nanophases of TiO2

2013 ◽  
Vol 24 ◽  
pp. 133-139 ◽  
Author(s):  
Madhavi Thakurdesai ◽  
A. Mahadkar ◽  
Varsha Bhattacharyya
Keyword(s):  
Thin Films ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Heavy Ion ◽  
High Energy ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Non Equilibrium

Ion beam irradiation is a unique non-equilibrium technique for phase formation and material modification. Localized rise in temperature and ultra fast (~1012 s) dissipations of impinging energy make it an attractive tool for nanostructure synthesize. Dense electronic excitation induced spatial and temporal confinement of high energy in a narrow dimension leads the system to a highly non-equilibrium state and the system then relaxes dynamically inducing nucleation of nanocrystals along the latent track. In the present investigation, amorphous thin films of TiO2 are irradiated by 100 MeV Ag ion beam. These irradiated thin films are characterized by Atomic Force Microscopy (AFM), Glancing Angle X-ray Diffraction (GAXRD), Transmission Electron Microscopy (TEM) and UV-VIS absorption spectroscopy. AFM and TEM studies indicate formation of circular nanoparticles of size 10±2 nm in a film irradiated at a fluence of 1×1012 ions.cm-2. Nanophase formation is also inferred from the blueshift observed in UV-VIS absorption band edge.

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