Radiation Detection with Evaporated Csl(TI) Coupled to a-Si:H Photodiode Layers

1991 ◽  
Vol 219 ◽  
Author(s):  
I. Fujieda ◽  
G. Cho ◽  
J. Drewery ◽  
T. Gee ◽  
T. Jing ◽  
...  
Keyword(s):  
Radiation Detection ◽  
X Ray ◽  
Glass Substrates ◽  
Photodiode Array ◽  
Amorphous Si ◽  
Signal Yield ◽  
Lower Noise

ABSTRACTCsl(TI) layers 100–1000 μm thick were evaporated on glass substrates from a crystal Csl(TI). When they were exposed to calibrated X-ray pulses, their scintillation properties were found to be comparable to those of a crystal Csl(TI). Single p particles from radioisotopes were successfully detected by these layers coupled to a crystalline Si photodiode. The light spread inside evaporated Csl(TI) was measured by an amorphous Si (a-Si:H) photodiode array coupled to evaporated Csl(TI) layers. Monolithic X-ray detectors were fabricated by evaporating Csl(TI) on a-Si:H photodiodes directly. The signal yield and noise of this prototype were 1.5×10+4 electrons/MeV and 3×10+4 electrons FWHM, respectively. Larger signal size and lower noise are expected by optimizing the photodiode design.

Photoluminescence of Different Phase Si Nanoclusters in Amorphous Hydrogenated Silicon

2008 ◽  
Vol 1066 ◽  
Author(s):  
Tetyana V. Torchynska
Keyword(s):  
Light Emission ◽  
X Ray Diffraction ◽  
Silicon Matrix ◽  
Hydrogenated Silicon ◽  
X Ray ◽  
Glass Substrates ◽  
Cvd Method ◽  
Amorphous Hydrogenated Silicon ◽  
Amorphous Si ◽  
Si Nanocrystallites

ABSTRACTThis paper presents the results of XRD and PL spectrum studies for Si nano-clusters embedded in amorphous silicon matrix. Investigated layers were deposited by the hot-wire CVD method on glass substrates at the wafer temperature 300°C and different filament temperatures from the range 1735-1885°C. It was shown that variation of filament temperatures allows producing the films with desirable parameters. Using of X-ray diffraction and photoluminescence methods the correlation between the intensity of some photoluminescence bands and the concentrations of Si nanocrystallites and amorphous Si nanoclusters has been shown. The nature of light emission is discussed.

Electrodeposition of Cu2O Particles by Using Electrolyte Solution Containing Glucopone as Surfactant

2009 ◽  
Vol 1 (2) ◽  
pp. 18-20
Author(s):  
Dahyunir Dahlan
Keyword(s):  
Indium Tin Oxide ◽  
Pulse Current ◽  
Platinum Electrode ◽  
Saturated Calomel Electrode ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Continuous Current ◽  
Oxide Particles ◽  
Cupric Sulphate

Copper oxide particles were electrodeposited onto indium tin oxide (ITO) coated glass substrates. Electrodeposition was carried out in the electrolyte containing cupric sulphate, boric acid and glucopone. Both continuous and pulse currents methods were used in the process with platinum electrode, saturated calomel electrode (SCE) and ITO electrode as the counter, reference and working electrode respectively. The deposited particles were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). It was found that, using continuous current deposition, the deposited particles were mixture of Cu2O and CuO particles. By adding glucopone in the electrolyte, particles with spherical shapes were produced. Electrodeposition by using pulse current, uniform cubical shaped Cu2O particles were produced

X- ray diffraction and dielectric properties of PbSe thin films

2019 ◽  
Vol 15 (34) ◽  
pp. 1-14
Author(s):  
Bushra A. Hasan
Keyword(s):  
Thin Films ◽  
Thermal Activation ◽  
Thermal Evaporation ◽  
Thermal Activation Energy ◽  
Dielectric Constants ◽  
Conductivity Measurements ◽  
X Ray Diffraction ◽  
Thermal Evaporation Method ◽  
X Ray ◽  
Glass Substrates

Lead selenide PbSe thin films of different thicknesses (300, 500, and 700 nm) were deposited under vacuum using thermal evaporation method on glass substrates. X-ray diffraction measurements showed that increasing of thickness lead to well crystallize the prepared samples, such that the crystallite size increases while the dislocation density decreases with thickness increasing. A.C conductivity, dielectric constants, and loss tangent are studied as function to thickness, frequency (10kHz-10MHz) and temperatures (293K-493K). The conductivity measurements confirm confirmed that hopping is the mechanism responsible for the conduction process. Increasing of thickness decreases the thermal activation energy estimated from Arhinus equation is found to decrease with thickness increasing. The increase of thickness lead to reduce the polarizability α while the increasing of temperature lead to increase α.

scholarly journals Characterization of Chromium Compensated GaAs Sensors with the Charge-Integrating JUNGFRAU Readout Chip by Means of a Highly Collimated Pencil Beam

Sensors ◽  
2021 ◽  
Vol 21 (4) ◽  
pp. 1550
Author(s):  
Dominic Greiffenberg ◽  
Marie Andrä ◽  
Rebecca Barten ◽  
Anna Bergamaschi ◽  
Martin Brückner ◽  
...  
Keyword(s):  
Low Noise ◽  
State University ◽  
Noise Performance ◽  
X Ray ◽  
A Value ◽  
Resolution Capability ◽  
Sensor Properties ◽  
Pixel Pitch ◽  
Lower Noise

Chromium compensated GaAs or GaAs:Cr sensors provided by the Tomsk State University (Russia) were characterized using the low noise, charge integrating readout chip JUNGFRAU with a pixel pitch of 75 × 75 µm2 regarding its application as an X-ray detector at synchrotrons sources or FELs. Sensor properties such as dark current, resistivity, noise performance, spectral resolution capability and charge transport properties were measured and compared with results from a previous batch of GaAs:Cr sensors which were produced from wafers obtained from a different supplier. The properties of the sample from the later batch of sensors from 2017 show a resistivity of 1.69 × 109 Ω/cm, which is 47% higher compared to the previous batch from 2016. Moreover, its noise performance is 14% lower with a value of (101.65 ± 0.04) e− ENC and the resolution of a monochromatic 60 keV photo peak is significantly improved by 38% to a FWHM of 4.3%. Likely, this is due to improvements in charge collection, lower noise, and more homogeneous effective pixel size. In a previous work, a hole lifetime of 1.4 ns for GaAs:Cr sensors was determined for the sensors of the 2016 sensor batch, explaining the so-called “crater effect” which describes the occurrence of negative signals in the pixels around a pixel with a photon hit due to the missing hole contribution to the overall signal causing an incomplete signal induction. In this publication, the “crater effect” is further elaborated by measuring GaAs:Cr sensors using the sensors from 2017. The hole lifetime of these sensors was 2.5 ns. A focused photon beam was used to illuminate well defined positions along the pixels in order to corroborate the findings from the previous work and to further characterize the consequences of the “crater effect” on the detector operation.

scholarly journals Reactive Dual Magnetron Sputtering: A Fast Method for Preparing Stoichiometric Microcrystalline ZnWO4 Thin Films

Surfaces ◽  
2021 ◽  
Vol 4 (2) ◽  
pp. 106-114
Author(s):  
Yannick Hermans ◽  
Faraz Mehmood ◽  
Kerstin Lakus-Wollny ◽  
Jan P. Hofmann ◽  
Thomas Mayer ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Fast Method ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Post Annealing ◽  
Rf Signal ◽  
First Time

Thin films of ZnWO4, a promising photocatalytic and scintillator material, were deposited for the first time using a reactive dual magnetron sputtering procedure. A ZnO target was operated using an RF signal, and a W target was operated using a DC signal. The power on the ZnO target was changed so that it would match the sputtering rate of the W target operated at 25 W. The effects of the process parameters were characterized using optical spectroscopy, X-ray diffraction, and scanning electron microscopy, including energy dispersive X-ray spectroscopy as well as X-ray photoelectron spectroscopy. It was found that stoichiometric microcrystalline ZnWO4 thin films could be obtained, by operating the ZnO target during the sputtering procedure at a power of 55 W and by post-annealing the resulting thin films for at least 10 h at 600 °C. As FTO coated glass substrates were used, annealing led as well to the incorporation of Na, resulting in n+ doped ZnWO4 thin films.

Characterization of amorphous-Si/1ML-Ge/Si(001) Interface Structure by X-ray Standing Waves

2003 ◽  
Vol 42 (Part 1, No. 11) ◽  
pp. 7050-7052 ◽  
Author(s):  
Shinichiro Nakatani ◽  
Kazushi Sumitani ◽  
Akinobu Nojima ◽  
Toshio Takahashi ◽  
Keiichi Hirano ◽  
...  
Keyword(s):  
Standing Waves ◽  
Interface Structure ◽  
X Ray ◽  
Amorphous Si

scholarly journals Properties of InGaN deposited on Glass at Low Temperature

1997 ◽  
Vol 2 ◽  
Author(s):  
Tilman Beierlein ◽  
S. Strite ◽  
A. Dommann ◽  
D. J. Smith
Keyword(s):  
Low Temperature ◽  
Indium Tin Oxide ◽  
High Electron ◽  
Transparent Conductor ◽  
High Background ◽  
X Ray ◽  
Substrate Heating ◽  
Glass Substrates ◽  
High Electron Concentration ◽  
Background Absorption

We have investigated the properties of InGaN grown at low temperature on glass substrates by a plasma enhanced MBE process. The goal of this study was to evaluate the potential of InGaN as an oxide-free, transparent conductor material which could be deposited at or slightly above room temperature with minimal interaction or damage to the underlying material. InxGa1−xN films deposited on glass, even without substrate heating, are highly crystalline, but the crystallinity as measured by x-ray degrades at x < 0.5. The microstructure observed by TEM of InGaN films deposited on unheated substrates is highly columnar, with typical column widths of ~10 nm. The optical absorption spectra of InGaN/glass have a distinct absorption edge at the bandgap, but also high background absorption in the bandgap. InxGa1−xN grown on glass (x > 0.5) is conductive due to its high electron concentration. InN electron Hall mobilities > 20 cm2/Vs when grown at 400°C, and ~ 7 cm2/Vs on unheated substrates were obtained. The addition of GaN degraded the electrical properties of the films to a greater extent than it improved the transparency. As a result, the best transparent conductor films were pure InN which, when deposited at 400°C, were half as transparent in the green as an indium tin oxide film having the same sheet resistance.

Effect of Substrate Temperature on the Electrochromic Properties of Cobalt Hydroxide Thin Films Prepared by Reactive Sputtering

2011 ◽  
Vol 1328 ◽  
Author(s):  
KyoungMoo Lee ◽  
Yoshio Abe ◽  
Midori Kawamura ◽  
Hidenobu Itoh
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Indium Tin Oxide ◽  
Large Change ◽  
Amorphous Structure ◽  
Cobalt Hydroxide ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Substrate Temperatures

ABSTRACTCobalt hydroxide thin films with a thickness of 100 nm were deposited onto glass, Si and indium tin oxide (ITO)-coated glass substrates by reactively sputtering a Co target in H2O gas. The substrate temperature was varied from -20 to +200°C. The EC performance of the films was investigated in 0.1 M KOH aqueous solution. X-ray diffraction (XRD) and Fourier transform infrared (FTIR) spectroscopy of the samples indicated that Co3O4 films were formed at substrate temperatures above 100°C, and amorphous CoOOH films were deposited in the range from 10 to -20°C. A large change in transmittance of approximately 26% and high EC coloration efficiency of 47 cm2/C were obtained at a wavelength of 600 nm for the CoOOH thin film deposited at -20°C. The good EC performance of the CoOOH films is attributed to the low film density and amorphous structure.

scholarly journals INFLUENCE OF ELECTRIC FIELD ON ADHESION AND STRUCTURE OF CONDUCTING FILMS ON DIELECTRIC SUBSTANCES

2017 ◽  
Vol 60 (8) ◽  
pp. 100 ◽  
Author(s):  
Nikolai S. Pshchelko ◽  
Ekaterina G. Vodkailo ◽  
Vladimir V. Tomaev ◽  
Boris D. Klimenkov ◽  
Veniamin L. Koshevoi ◽  
...  
Keyword(s):  
Electric Field ◽  
Dielectric Substrate ◽  
Zno Films ◽  
Electric Voltage ◽  
X Ray ◽  
Dry Air ◽  
Glass Substrates ◽  
Plasma Sputtering ◽  
Air Atmosphere ◽  
Extended Surface

Some results are provided confirming that modifying of the zinc films fabricated on glass substrates by a resulting effect of heat treatment in an atmosphere of dry air and action of cross electric field is possible. Using scanning electron microscopy (measured with the Zeiss Merlin microscope) the surface morphology of the films was studied. Also, the elemental composition of the films by micro-X-ray spectral analysis was studied. On the glass substrates, by the method of vacuum thermal evaporation, zinc films (Zn) with thickness of ~ 500 nm were obtained. In order to form ZnO films, the original films were treated at 250 °C in a dry air atmosphere, and in another case - in addition to the sample a transverse electric field with a potential of 300 V was applied. Platinum films on the silicon dioxide layer were obtained using the method of the ion-plasma sputtering. These layers were investigated by X-ray phase analysis, electron and atomic force microscopy. The thickness of platinum layers was 50 and 100 nm. During the deposition (deposition temperature – 300 °C, deposition rate - 5 nm / min), applied voltage between the platinum film and the silicon plate was 5 V. The films, obtained by applying a biasing, showed a more homogeneous fine-grained structure and a higher rate of growth than the original samples.  In this way ZnO films can be manufactured with the extended surface. The possibility of significant changes caused by electric field use in adhesion, structure and conductive properties of the coatings is discussed. The method of depositing platinum on a dielectric substrate with an additional electrostatic field is also substantiated. It is shown that the application of an electric voltage to the film leads to a significant change in the structure of the resulting coating.Forcitation:Pshchelko N.S., Vodkailo E.G., Tomaev V.V., Klimenkov B.D., Koshevoi V.L., Belorus A.O. Influence of electric field on adhesion and structure of conducting films on dielectric substances. Izv. Vyssh. Uchebn. Zaved. Khim. Khim. Tekhnol. 2017. V. 60. N 8. P. 100-104.

Sign in / Sign up

Export Citation Format

Share Document