Effects of Temperature and Charge Depletion on the Spin Density in Hydrogenated Amorphous Silicon
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ABSTRACTThe dependence of the spin density upon temperature and charge depletion is calculated based on the standard defect model in a-Si:H of a D-center with positive, neutral, and negative charge states. The results are compared with recent measurements of depletion width modulated spin densities and temperature-dependent spin densities. It is shown that the initial charge density assumed for the defect system substantially affects conclusions regarding electronic correlation energies drawn from the measurements.
2018 ◽
Vol 128
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pp. 204-213
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2021 ◽
Vol 0
(0)
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pp. 0
2005 ◽
Vol 71
(10)
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pp. 6453-6457
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1987 ◽
Vol 02
(07)
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pp. 479-485
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