The Nature of Electrically Inactive Implanted Arsenic in Silicon after Rapid Thermal Annealing

1991 ◽  
Vol 224 ◽  
Author(s):  
John L. Altrip ◽  
Alan G.R. Evans ◽  
Nigel D. Young ◽  
John R. Logan
Keyword(s):  
Hall Effect ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Room Temperature ◽  
Low Dose ◽  
Solubility Limit ◽  
High Dose ◽  
Temperature Dependent ◽  
Spreading Resistance ◽  
Hall Effect Measurements

AbstractThe electrical activation of As implanted Si has been investigated on rapid thermal annealing timescales using sheet resistance, spreading resistance and Hall Effect techniques. For high dose implants (>1015 As cm-2) differential Hall Effect and spreading resistance profiles confirm the existence of a temperature dependent electrical solubility limit. However for low dose implants, annealing schedules chosen such that the electrical solubility limit is not exceeded reveal electrical deactivation which is not accounted for in the clustering theory. Hall Effect measurements performed as a function of temperature have enabled us to reveal directly electrically inactive As which is not observable at room temperature using standard electrical techniques. The results indicate that As atoms in Si introduce deep trapping levels within the bandgap which are responsible forremoving As from the conduction process at room temperature. This temperature activated process is characterized with an activation energy of 0.4eV.

scholarly journals Growth of (110) GaAs/GaAs by Molecular Beam Epitaxy

1985 ◽  
Vol 46 ◽  
Author(s):  
L.T. Parechanian ◽  
E.R. Weber ◽  
T.L. Hierl
Keyword(s):  
Molecular Beam Epitaxy ◽  
Substrate Temperature ◽  
Hall Effect ◽  
Room Temperature ◽  
Molecular Beam ◽  
Defect Density ◽  
Temperature Dependent ◽  
Mbe Growth ◽  
Order Of Magnitude ◽  
Hall Effect Measurements

AbstractThe simultaneous molecular beam epitaxy (MBE) growth of (100) and (110) GaAs/GaAsintentionally doped with Si(∼lE16/cm^3) was studied as a function of substrate temperature, arsenic overpressure, and epitaxial growth rate. The films wereanalyzed by scanning electron and optical microscopy, liquid helium photoluminescence (PL), and electronic characterization.For the (110) epitaxal layers, an increase in morphological defect density and degradation of PL signal was observed with a lowering of the substrate temperature from 570C. Capacitance-voltage (CV) and Hall Effect measurements yield room temperature donor concentrations for the (100) films of n∼l5/cm^3 while the (110) layers exhibit electron concentrations of n∼2El7/cm^3. Hall measurements at 77K on the (100) films show the expected mobility enhancement of Si donors, whereas the (110) epi layers become insulating or greatly compensated. This behavior suggests that room temperature conduction in the (110) films is due to a deeper donor partially compensated by an acceptor level whose concentration is of the same order of magnitude as that of any electrically active Si. Temperature dependent Hall effect indicates that the activation energy of the deeper donor level lies ∼290 meV from the conduction band. PL and Hall effect indicate that the better quality (110) material is grown by increasingthe arsenic flux during MBE growth. The nature of the defects involved with the growth process will be discussed.

Formation of buried α- and β- FeSi2 in (100) Si by high dose ion implantation

1992 ◽  
Vol 279 ◽  
Author(s):  
K. Maex ◽  
A. Lauwers ◽  
M. Van Hove ◽  
W. Vandervorst ◽  
M. Van Rossum
Keyword(s):  
Ion Implantation ◽  
Hall Effect ◽  
Phase Formation ◽  
Ion Beam ◽  
High Dose ◽  
Spreading Resistance ◽  
Orientation Effects ◽  
Transport Measurements ◽  
Hall Effect Measurements ◽  
Anneal Temperature

ABSTRACTA study on ion beam synthesis of buried α- and β-FeSi2 in >100< Si is presented. Phase formation has been investigated as a function of implant and anneal temperature. Layer characterization was performed by RBS, XRD, resistivity, spreading resistance and Hall effect measurements. Orientation effects in the layers have been observed depending on the implant temperature. Transport measurements show that die holes are the majority carriers in the semiconducting layers.

Diffusion of Atoms Implanted in Poly Silicon Layer on Insulator

1987 ◽  
Vol 106 ◽  
Author(s):  
M. Takai ◽  
M. Izumi ◽  
T. Yamamoto ◽  
A. Kinomura ◽  
K. Gamo ◽  
...  
Keyword(s):  
Hall Effect ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Silicon Layer ◽  
Silicon On Insulator ◽  
Tail Region ◽  
Furnace Annealing ◽  
Peak Region ◽  
Poly Silicon ◽  
Hall Effect Measurements

ABSTRACTDiffusion of arsenic implanted in poly-silicon on insulator structures after furnace and rapid thermal annealing (RTA) has been investigated by Rutherford backscattering (RBS) and Hall effect measurements. The diffusivity for As in poly–Si on insulator is represented by D = 3.12 × 104 exp (− 3.86/kT) cm/sec for the tail region after both RTA and furnace annealing and D = 34.0 exp (− 3.42/kT) cm2/sec for the peak region after RTA. Poly–Si layers after implantation and annealing were found to have tensile stresses of 3.0 – 4.0 kbar.

Application of Field-Enhanced Rapid Thermal Annealing to Activation of Doped Polycrystalline Si Thin Films

2005 ◽  
Vol 862 ◽  
Author(s):  
B.S. So ◽  
Y.H. You ◽  
H.J. Kim ◽  
Y.H. Kim ◽  
J.H. Hwang ◽  
...  
Keyword(s):  
Thin Films ◽  
Charge Carrier ◽  
Hall Effect ◽  
Carrier Concentration ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Charge Carrier Concentration ◽  
Furnace Temperature ◽  
Ion Activation ◽  
Hall Effect Measurements

AbstractActivation of polycrystalline silicon (poly-Si) thin films doped as n-type using selective ion implantation of phosphorous was performed employing field-enhanced rapid thermal annealing where rapid thermal annealing of halogen lamps is combined with alternating magnetic fields. The ion activation was evaluated using Hall effect measurements incorporating the resistivity, the charge carrier concentration, and the mobility. Statistical design of experiments is attempted in order to clarify the effects and interactions of processes variables on field-enhanced rapid thermal annealing towards ion activation: the three processing variables are furnace temperature, power of halogen lamp, and the alternating magnetic field. Hall effect measurements indicate that the furnace temperature and RTA power are found to be dominant in activating the doped polycrystalline Si in dose. The activation process results from the competition between charge carrier concentration and mobility: the increase in mobility is larger than the decrease in charge carrier concentration.

Hall effect measurements at low temperature of arsenic implanted into 4H-silicon carbide

2000 ◽  
Vol 622 ◽  
Author(s):  
J. Senzaki ◽  
K. Fukuda ◽  
Y. Ishida ◽  
Y. Tanaka ◽  
H. Tanoue ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Hall Effect ◽  
Low Dose ◽  
Dose Dependence ◽  
Activation Energies ◽  
High Dose ◽  
Charge Neutrality ◽  
Least Squares Fit ◽  
Metallic Conduction ◽  
Hall Effect Measurements

ABSTRACTThe arsenic dose dependence of electrical properties for implanted samples at 500°C and subsequently annealed at 1600°C for 30min has been investigated to derivate the activation energies of the arsenic donors in silicon carbide. Hall effect measurements were performed between 20K and 773K. Hall carrier concentration of implanted sample with high dose of 7×1015 cm−2 is independence of temperature, which indicates the formation of implanted layer with metallic conduction. For the sample with low dose of 1×1014 cm−2, the experimental Hall mobility varies directly as T3/2 below 80K and as T−3/2 above 150K. The activation energies of arsenic donors determined from the implanted sample with low dose using a least-squares fit of the charge neutrality equation are 66.8 meV for hexagonal site and 127.0 meV for cubic site, respectively.

Rapid Annealing of GaAs: Uniformity and Temperature Dependence of Activation

1985 ◽  
Vol 52 ◽  
Author(s):  
K. D. Cummings ◽  
S. J. Pearton ◽  
G. P. Vella-Coleiro
Keyword(s):  
Temperature Dependence ◽  
Hall Effect ◽  
Low Dose ◽  
High Dose ◽  
Electrical Measurements ◽  
Carrier Lifetimes ◽  
Gaas Substrates ◽  
Rapid Annealing ◽  
Capacitance Voltage ◽  
Hall Effect Measurements

ABSTRACTScanning microwave photoconductance, capacitance-voltage profiling and Hall effect measurements were used to investigate the uniformity of activation of Si, Be and Mg implanted 2″ and 3″ diameter, semi-insulating GaAs substrates after rapid thermal annealing in a commercial furnace. The results indicate that carrier lifetimes and mobilities for low dose (3−4 × 1012 cm−2) implants and carrier densities for high dose (1× 1015 cm−2) implants are comparable or superior in rapidly annealed substrates to those obtained in thermally annealed implanted layers. The uniformity of these parameters is not significantly different for wafers annealed by either method. The temperature dependence of damage removal and carrier activation in the implanted regions during both furnace and transient annealing was also investigated, and demonstrates that the microwave photoconductance technique gives results for donor implantation correlating well with conventional backscattering and electrical measurements respectively.

A New Hafnium-Beryllium System Prioduced by Ion Implantation and Annealing Techniques

1983 ◽  
Vol 27 ◽  
Author(s):  
J.C. Soares ◽  
A.A. Melo ◽  
M.F. DA Silva ◽  
E.J. Alves ◽  
K. Freitag ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Single Crystals ◽  
Room Temperature ◽  
Low Dose ◽  
Correlation Method ◽  
High Dose ◽  
Tetrahedral Sites ◽  
Time Differential ◽  
Before And After ◽  
Beryllium Foil

ABSTRACTLow and high dose hafnium imolanted beryllium samoles have been prepared at room temperature by ion implantation of beryllium commercial foils and single crystals. These samples have been studied before and after annealing with the time differential perturbed angular correlation method (TDPAC) and with Rutherford backscattering and channeling techniques. A new metastable system has been discovered in TDPAC-measurements in a low dose hafnium implanted beryllium foil annealed at 500°C. Channeling measurements show that the hafnium atoms after annealing, are in the regular tetrahedral sites but dislocated from the previous position occupied after implantation. The formation of this system is connected with the redistribution of oxygen in a thin layer under the surface. This effect does not take place precisely at the same temperature in foils and in single crystals.

Impact of rapid thermal annealing and hydrogenation on the doping concentration and carrier mobility in solid phase crystallized poly-Si thin films

2011 ◽  
Vol 1321 ◽  
Author(s):  
A. Kumar ◽  
P.I. Widenborg ◽  
H. Hidayat ◽  
Qiu Zixuan ◽  
A.G. Aberle
Keyword(s):  
Thin Films ◽  
Electronic Properties ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Carrier Mobility ◽  
Crystalline Silicon ◽  
Solid Phase ◽  
Dopant Activation ◽  
Hall Effect Measurements ◽  
Probe Measurements

ABSTRACTThe effect of the rapid thermal annealing (RTA) and hydrogenation step on the electronic properties of the n+ and p+ solid phase crystallized (SPC) poly-crystalline silicon (poly-Si) thin films was investigated using Hall effect measurements and four-point-probe measurements. Both the RTA and hydrogenation step were found to affect the electronic properties of doped poly-Si thin films. The RTA step was found to have the largest impact on the dopant activation and majority carrier mobility of the p+ SPC poly-Si thin films. A very high Hall mobility of 71 cm2/Vs for n+ poly-Si and 35 cm2/Vs for p+ poly-Si at the carrier concentration of 2×1019 cm-3 and 4.5×1019 cm-3, respectively, were obtained.

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