Photo EPR Study of Trapping and Recombination Processes in Semi-Insulating 4H-SiC Crystals as Function of Temperature

2001 ◽  
Vol 680 ◽  
Author(s):  
E.N. Kalabukhova ◽  
S.N. Lukin ◽  
A. Saxler ◽  
W.C. Mitchel ◽  
S R. Smith ◽  
...  
Keyword(s):  
Fermi Level ◽  
Deep Level ◽  
Antisite Defect ◽  
Shallow Donor ◽  
Epr Spectrum ◽  
Paramagnetic Resonance ◽  
Line Intensities ◽  
Donor And Acceptor ◽  
Recombination Processes ◽  
Deep Donor

ABSTRACTPhoto-Electron Paramagnetic Resonance (photo-EPR) measurements of semi-insulating (s.-i.) 4H SiC have been made at 37 GHz including photo excitation and photo quenching techniques in the temperature interval from 77 K to 50 K. At T = 77 K in the dark the EPR spectrum consists of a low intensity line due to boron on the cubic lattice site and a single line with isotropic g∥ = g⊥ = 2.0025 due to a carbon-related surface defect. During illumination with ultraviolet light the EPR lines of hexagonal boron and cubic nitrogen appear in the EPR spectrum and persist after the illumination is removed. Subsequent illumination of the sample with sub-band gap, visible, light resulted in the quenching of the EPR lines from nitrogen and appearance of the IP1EPR line with g∥ = 2.0048, g⊥ = 2.0030 caused by direct transfer of electrons from nitrogen donor to the P1 center. The lifetime of the photo-generated carriers trapped by the P1 centers is found to be more than 15- 20 hours after the photo-excitation was turned off. The deep donor P1 local center is suggested to be the as yet unidentified deep level located at EC – 1.1 eV which pins the Fermi level in this sample at this energy in the dark. As the temperature is lowered from 77K and the quasi Fermi level positions reach shallow donor and acceptor states, an additional EPR line, ID, with g∥ = 2.0063, g⊥ = 2.0006, appears at 50 K in the excitation EPR spectrum and is attributed to the antisite defect Si−c with an energy level shallower than nitrogen. At the same time the ratio of the photo-excited EPR line intensities responsible for boron on the cubic and hexagonal sites, IkB:IhB, returns to the value observed at 77 K and becomes equal to 0.4 at 50 K, showing that the concentration of boron in the hexagonal site is higher than on the cubic site.

Deep-Level Defects in AlN Single Crystals: EPR Studies

2010 ◽  
Vol 645-648 ◽  
pp. 1195-1198
Author(s):  
Ivan V. Ilyin ◽  
Alexandra A. Soltamova ◽  
V.A. Soltamov ◽  
V.A. Khramtsov ◽  
E.N. Mokhov ◽  
...  
Keyword(s):  
Deep Level ◽  
Shallow Donor ◽  
Nitrogen Vacancy ◽  
Donor Center ◽  
Paramagnetic Resonance ◽  
X Band ◽  
Two Samples ◽  
Before And After ◽  
Deep Donor ◽  
Electron Paramagnetic

Electron paramagnetic resonance (EPR) at X-band (9.4 GHz) and Q-band (35 GHz) have been used to study defects in two samples of AlN monocrystals, grown by a sublimation sandwich method. These investigations reveal the presence of Fe2+ impurities in the reddish sample. The spectra of substitutional Fe2+ are highly anisotropic and could be observed even up to the room temperature. After illumination the signals showing the DX behavior were detected in the same sample. We assume these signals to arise due to the presence of the shallow donor center namely the isolated substitutional oxygen ON occupying the nitrogen position. In the second slightly amber-coloured sample EPR measurements before and after X-ray showed the presence of a deep-donor center which was assumed to be nitrogen vacancy VN. Based on thermoluminescence measurements the depth of the level was estimated to 0.45-0.5 eV.

Deep Donor and Acceptor Levels Induced by High Temperature and long time Annealing in LEC Gallium Arsenide

1991 ◽  
Vol 240 ◽  
Author(s):  
G. Marrakchi ◽  
A. Kalboussi ◽  
G. Guillot ◽  
M. Ben Salem ◽  
H. Maaref ◽  
...  
Keyword(s):  
High Temperature ◽  
Cold Water ◽  
Deep Level ◽  
Electron Trap ◽  
Single Donor ◽  
Long Duration ◽  
Donor And Acceptor ◽  
Deep Donor ◽  
Long Time ◽  
Lec Gaas

ABSTRACTThe effects of high temperature isothermal annealing on the electrical properties of donor and acceptor defects in n-type LEC GaAs are investigated. The annealing experiments are performed under As-rich atmosphere at 1000°C for 1–4 and 16 hours followed by a very quick quenching into cold water of the quartz ampoules containing the samples. The donor and acceptor levels are detected respectively by standard (DLTS) and optical (ODLTS) deep level spectroscopy. DLTS results show the presence of one single donor level present in unannealed and annealed samples at Ec - 0.79eV which is identified as the well known electron trap EL2 Only the sample annealed for 16 hs exhibits the presence of a new electron trap named TAI at Ec - 0.32eV. The appearance of TAI is correlated in one hand with the evolution of EL2 concentration and in the other hand to the effect of long duration (16 hs) of the treatment. For acceptor levels, two hole traps HT1 and HT2 are detected respectively at EV + 0.18 eV and EV+ 0.28 eV. HT1 is detected only in samples annealed for 4 and 16 hs and HT2 is detected in all studied samples. Photoluminescence (PL) measurements show the presence of the 1.44 eV band corresponding to gallium antisite GaAs defect. This band observed in unannealed and annealed samples shows that GaAs remains stable even after thermal annealing at lOOO°C for 16 hs and it is correlated with the presence of HT2.

Deep Level Characterization of LP-MOCVD Grown Al0.48In0.52As

1993 ◽  
Vol 325 ◽  
Author(s):  
F. Ducroquet ◽  
G. Guillot ◽  
K. Hong ◽  
C.H. Hong ◽  
D. Pavlidis ◽  
...  
Keyword(s):  
Deep Level ◽  
Shallow Donor ◽  
Electrical Characteristics ◽  
Oxygen Contamination ◽  
Deep Donor ◽  
Low Pressure Mocvd ◽  
Different Origins ◽  
Inp Substrates ◽  
Preferential Incorporation

AbstractDeep levels in unintentionally doped A10. 48In0.52As layers epitaxially grown on InP substrates by low-pressure MOCVD have been investigated as a function of growth temperature (Tg ranging from 570 to 690°C). Two different origins for the residual carrier concentration are deduced depending on Tg: i) low growth temperatures favor the creation of a deep donor located at Ec-(0.13±0.04)eV; ii) At higher Tg, a preferential incorporation of a shallow donor occurs, which can be attributed to silicon by SIMS measurements. The oxygen contamination deduced by SIMS and the electrical characteristics of the AlInAs layers do not appear to be correlated.

Radiative recombination processes of thermal donors in silicon

2001 ◽  
Vol 692 ◽  
Author(s):  
S. Pizzini ◽  
S. Binetti ◽  
E. Leoni ◽  
A. Le Donne ◽  
M. Acciarri ◽  
...  
Keyword(s):  
Room Temperature ◽  
Light Emission ◽  
Deep Level ◽  
Line Emission ◽  
Shallow Donor ◽  
Light Emitting ◽  
Microelectronic Technology ◽  
Recombination Processes ◽  
Transient Spectroscopy ◽  
Silicon Based

AbstractThere is a recent, renewed attention on the possible development of optical emitters compatible with silicon microelectronic technology and it has been recently shown that light emitting diodes could be manufactured on dislocated silicon, where dislocations were generated by plastic deformation or ion implantation. Among other potential sources of room temperature light emission, compatible with standard silicon-based ULSI technology, we have studied old thermal donors (OTD), as the origin of their luminescence is still matter of controversy and demands further investigation.In this work we discuss the results of a spectroscopical study of OTD using photoluminescence (PL) and Deep Level Transient Spectroscopy (DLTS) on standard Czochralsky (Cz) silicon samples and on carbon-doped samples.We were able to show that their main optical activity, which consists of a narrow band at 0.767 eV ( P line), is correlated to a transition from a shallow donor level of OTD to a deep level at EV+0.37 eV which is tentatively associated to C-O complexes. As we have shown that the P line emission persists at room temperature, we discuss about its potentialities to silicon in optoelectronic applications.

Hydrogen in III–V Semiconductors

1987 ◽  
Vol 104 ◽  
Author(s):  
W. C. Dautremont–Smith
Keyword(s):  
Hydrogen Diffusion ◽  
Deep Level ◽  
Bulk Material ◽  
Low Frequency ◽  
Shallow Donor ◽  
Direct Exposure ◽  
Donor And Acceptor ◽  
Absorption Studies ◽  
Dx Center ◽  
P Type

ABSTRACTThe reversible introduction of atomic hydrogen into III–V semiconductors reduces the active concentrations of shallow donor and acceptor levels, as well as a variety of deep levels. Dissociation of the hydrogen-containing complexes by thermal annealing can restore the original active concentrations, and aid in the characterization of the complexes involved. Hydrogen is in-diffused at temperatures typically in the 150 to 300°C range, most simply from an H2 plasma.In GaAs, the III–V compound which has been subjected to the most hydrogenation studies, carrier concentrations are reduced (by up to many orders of magnitude) in both n- and p-type material. Hydrogen diffusion depths are dependent on dopant concentration, but for similar doping levels, diffusion is always deeper into p-type GaAs. In addition, the type of plasma exposure strongly influences the depth of H diffusion, with low frequency, direct exposure producing the greatest penetration depth. A variety of deep level defects in bulk material (including EL2) and in MBE-grown layers can be passivated, and partial passivation of interface-related defects in GaAs-on-Si has been demonstrated. Reactivation kinetics are dependent on the nature of the dopant or defect, with the passivation of p-GaAs being less stable than that of n-GaAs. Recent infra-red absorption studies have confirmed the formation of a donor-hydrogen complex in n-GaAs, in contrast to an As-H complex in p-GaAs. In GaAIAs, acceptors, donors, and the DX center have been passivated. In some cases, the defect passivation has greater thermal stability than that of the shallow levels, a property of potential benefit. Recently demonstrated applications of hydrogenation include an MBE GaAs MESFET with a hydrogenated channel, and a GaAs/GaAIAs double heterostructure laser with current guiding provided by resistive hydrogenated regions.

Radiation Effects on Hollandite Ceramics developed for Radioactive Cesium Immobilization

2003 ◽  
Vol 792 ◽  
Author(s):  
V. Aubin ◽  
D. Caurant ◽  
D. Gourier ◽  
N. Baffier ◽  
S. Esnouf ◽  
...  
Keyword(s):  
Radiation Effects ◽  
Liquid Waste ◽  
Fission Products ◽  
Radioactive Cesium ◽  
Radioactive Liquid Waste ◽  
Epr Spectrum ◽  
Paramagnetic Resonance ◽  
Γ Radiation ◽  
The Stability ◽  
High Level

ABSTRACTProgress on separating the long-lived fission products from the high level radioactive liquid waste (HLW) has led to the development of specific host matrices, notably for the immobilization of cesium. Hollandite (nominally BaAl2Ti6O16), one of the main phases constituting Synroc, receives renewed interest as specific Cs-host wasteform. The radioactive cesium isotopes consist of short-lived Cs and Cs of high activities and Cs with long lifetime, all decaying according to Cs+→Ba2++e- (β) + γ. Therefore, Cs-host forms must be both heat and (β,γ)-radiation resistant. The purpose of this study is to estimate the stability of single phase hollandite under external β and γ radiation, simulating the decay of Cs. A hollandite ceramic of simple composition (Ba1.16Al2.32Ti5.68O16) was essentially irradiated by 1 and 2.5 MeV electrons with different fluences to simulate the β particles emitted by cesium. The generation of point defects was then followed by Electron Paramagnetic Resonance (EPR). All these electron irradiations generated defects of the same nature (oxygen centers and Ti3+ ions) but in different proportions varying with electron energy and fluence. The annealing of irradiated samples lead to the disappearance of the latter defects but gave rise to two other types of defects (aggregates of light elements and titanyl ions). It is necessary to heat at relatively high temperature (T=800°C) to recover an EPR spectrum similar to that of the pristine material. The stability of hollandite phase under radioactive cesium irradiation during the waste storage is discussed.

scholarly journals Supramolecular Systems Containing B–N Frustrated Lewis Pairs of Tris(pentafluorophenyl)borane and Triphenylamine Derivatives

2021 ◽  
Vol 03 (02) ◽  
pp. 174-183
Author(s):  
P. Chidchob ◽  
S. A. H. Jansen ◽  
S. C. J. Meskers ◽  
E. Weyandt ◽  
N. P. van Leest ◽  
...  
Keyword(s):  
Materials Science ◽  
Supramolecular Polymers ◽  
Frustrated Lewis Pairs ◽  
Paramagnetic Resonance ◽  
Donor And Acceptor ◽  
Donor Acceptor ◽  
Noncovalent Polymers ◽  
Electron Paramagnetic ◽  
Supramolecular Polymerization ◽  
Lewis Pairs

The introduction of a chemical additive to supramolecular polymers holds high potential in the development of new structures and functions. In this regard, various donor- and acceptor-based molecules have been applied in the design of these noncovalent polymers. However, the incorporation of boron–nitrogen frustrated Lewis pairs in such architectures is still rare despite their many intriguing properties in catalysis and materials science. The limited choices of suitable boron derivatives represent one of the main limitations for the advancement in this direction. Here, we examine the use of the commercially available tris(pentafluorophenyl)borane with various triphenylamine derivatives to create supramolecular B–N charge transfer systems. Our results highlight the importance of a proper balance between the donor/acceptor strength and the driving force for supramolecular polymerization to achieve stable, long-range ordered B–N systems. Detailed analyses using electron paramagnetic resonance and optical spectroscopy suggest that tris(pentafluorophenyl)borane displays complex behavior with the amide-based triphenylamine supramolecular polymers and may interact in dimers or larger chiral aggregates, depending on the specific structure of the triphenylamines.

Deep Level Related Yellow Luminescence in P-Type GaN Grown by MBE on (0001) Sapphire

1999 ◽  
Vol 595 ◽  
Author(s):  
Giancarlo Salviati ◽  
Nicola Armani ◽  
Carlo Zanotti-Fregonara ◽  
Enos Gombia ◽  
Martin Albrecht ◽  
...  
Keyword(s):  
Volume Fraction ◽  
Deep Level ◽  
Cubic Phase ◽  
Donor Level ◽  
Yellow Luminescence ◽  
Wurtzite Phase ◽  
Shallow Acceptor ◽  
Deep Donor ◽  
P Type ◽  
Deep Donor Level

AbstractYellow luminescence (YL) has been studied in GaN:Mg doped with Mg concentrations ranging from 1019 to 1021 cm−3 by spectral CL (T=5K) and TEM and explained by suggesting that a different mechanism could be responsible for the YL in p-type GaN with respect to that acting in n-type GaN.Transitions at 2.2, 2.8, 3.27, 3.21, and 3.44 eV were found. In addition to the wurtzite phase, TEM showed a different amount of the cubic phase in the samples. Nano tubes with a density of 3×109 cm−2 were also observed by approaching the layer/substrate interface. Besides this, coherent inclusions were found with a diameter in the nm range and a volume fraction of about 1%.The 2.8 eV transition was correlated to a deep level at 600 meV below the conduction band (CB) due to MgGa-VN complexes. The 3.27 eV emission was ascribed to a shallow acceptor at about 170-190 meV above the valence band (VB) due to MgGa.The 2.2 eV yellow band, not present in low doped samples, increased by increasing the Mg concentration. It was ascribed to a transition between a deep donor level at 0.8-1.1 eV below the CB edge due to NGa and the shallow acceptor due to MgGa. This assumption was checked by studying the role of C in Mg compensation. CL spectra from a sample with high C content showed transitions between a C-related 200 meV shallow donor and a deep donor level at about 0.9- 1.1 eV below the CB due to a NGa-VN complex. In our hypothesis this should induce a decrease of the integrated intensity in both the 2.2 and 2.8 eV bands, as actually shown by CL investigations.

Interaction of Point Defects with Impurities in the Si-SiO2 System and its Influence on the Properties of the Interface

2009 ◽  
Vol 156-158 ◽  
pp. 145-148 ◽  
Author(s):  
Daniel Kropman ◽  
E. Mellikov ◽  
K. Lott ◽  
Tiit Kärner ◽  
Ivo Heinmaa ◽  
...  
Keyword(s):  
Electron Paramagnetic Resonance ◽  
Magnetic Resonance ◽  
Fermi Level ◽  
Point Defects ◽  
Interface Properties ◽  
Hydrogen Ions ◽  
Paramagnetic Resonance ◽  
Proposed Model ◽  
P Type ◽  
Electron Paramagnetic

The results of investigation of the point defect generation and interaction with impurities in the Si-SiO2 system during the process of its formation by means of electron paramagnetic resonance (EPR) and nucleous magnetic resonance (NMR) technique are presented. It has been shown that the diference in point defects interaction with hydrogen at the Si-SO2 interface with n- and p-type conductivity are connected with the sign of hydrogen ions incorporation dependence on the Fermi level position in accordance with the proposed model. The interface properties may be improved by laser irradiation.

Traps in Si-doped AlxGa1-xN Grown by Molecular Beam Epitaxy on Sapphire Characterized by Deep Level Transient Spectroscopy

2006 ◽  
Vol 955 ◽  
Author(s):  
Mo Ahoujja ◽  
S Elhamri ◽  
M Hogsed ◽  
Y. K. Yeo ◽  
R. L. Hengehold
Keyword(s):  
Molecular Beam Epitaxy ◽  
Deep Level Transient Spectroscopy ◽  
Molecular Beam ◽  
Deep Level ◽  
Unknown Origin ◽  
Shallow Donor ◽  
Related Point ◽  
Line Defects ◽  
Si Doped ◽  
Transient Spectroscopy

ABSTRACTDeep levels in Si doped AlxGa1−xN samples, with Al mole fraction in the range of x = 0 to 0.30, grown by radio-frequency plasma activated molecular beam epitaxy on sapphire substrates were characterized by deep level transient spectroscopy (DLTS). DLTS measurements show two significant electron traps, P1 and P2, in AlGaN at all aluminum mole fractions. The electron trap, P2, appears to be a superposition of traps A and B , both of which are observed in GaN grown by various growth techniques and are thought to be related to VGa-shallow donor complexes. Trap P1 is related to line defects and N-related point defects. Both of these traps are distributed throughout the bulk of the epitaxial layer. An additional trap P0 which was observed in Al0.20Ga0.80N and Al0.30Ga0.70N is of unknown origin, but like P1 and P2, it exhibits dislocation-related capture kinetics. The activation energy measured from the conduction band of the defects is found to increase with Al mole content, a behavior consistent with other III-V semiconductors.

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