Surface Cleaning and Passivation for the Growth of Si/Oxide/Si Structures
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ABSTRACTThis paper presents the results of surface cleaning and passivation of Si and oxide surfaces for the growth of Si/oxide/Si structures. Silicon surfaces are cleaned by the spin—etch process prior to the growth of silicon oxide. A silicon layer is then deposited after subsequent surface cleaning and chemical treatment on the surface of oxide/Si. Both the oxide and the silicon layers are grown in a plasma enhanced chemical vapor deposition system. The interface structure between layers of deposited Si/oxide/Si are observed by cross—section transmission electron microscopy (XTEM).
2008 ◽
Vol 47
(10)
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pp. 7998-8002
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2021 ◽
2005 ◽
Vol 483-485
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pp. 205-208
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2021 ◽
Vol 21
(4)
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pp. 2538-2544
2019 ◽
Vol 14
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pp. 1900087
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