Investigation of an in-situ probe for phase transformations during RTP silicidation

1992 ◽  
Vol 260 ◽  
Author(s):  
R. J. Schreutelkamp ◽  
P. Vandenabeele ◽  
B. Deweerdt ◽  
W. Coppye ◽  
C. Vermeiren ◽  
...  
Keyword(s):  
Phase Transformation ◽  
Thermal Degradation ◽  
Phase Transformations ◽  
Doping Level ◽  
Polycrystalline Silicon ◽  
Silicon Substrates ◽  
Si Substrates ◽  
Background Doping ◽  
Emissivity Measurements

ABSTRACTIn-situ emissivity measurements at a wavelength of 2.4 μα were used to monitor RTP Co silicidation on crystalline and polycrystalline silicon substrates. The influence of various parameters influencing the silicidation reaction was extensively studied. It is shown that particularly the phase transformation from CoSi to the final suicide phase, COSi2, strongly depends on parameters such as background doping level and type of substrate. This is illustrated for As-doped substrates. The method is extremely sensitive for the in-situ detection of the thermal degradation of thin COSi2 films at high temperatures, which is demonstrated for 25 nm COSi2 layers on highly As-doped c-Si substrates.

In‐Situ Fabrication of YBa2Cu3O7‐x Superconducting Thin Films Directly on Silicon Substrates with Tc0 > 77K

1989 ◽  
Vol 169 ◽  
Author(s):  
C. B. Lee ◽  
R. K. Singh ◽  
S. Sharan ◽  
A. K. Singh ◽  
P. Tiwari ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Pulses ◽  
Superconducting Film ◽  
Laser Evaporation ◽  
Silicon Substrates ◽  
Superconducting Thin Films ◽  
Si Substrates ◽  
In Situ Fabrication ◽  
Substrate Temperatures

AbstractWe report in‐situ fabrication of c‐axis textured YBa2Cu3O7‐x superconducting thin films with Tco > 77K on unbuffered silicon substrates by the biased pulsed laser evaporation (PLE) technique in the temperature range of 550‐650°C. At substrate temperatures below 550°C, no c‐axis texturing of the superconducting film was observed. The YBa2Cu3O7‐x superconducting films were fabricated by ablating a bulk YBa2Cu3O7 target by a XeCl excimer laser (λ = 308 nm, τ = 45 × 10‐9 sec) in a chamber maintained at an oxygen pressure of 0.2 torr . The thickness of the films was varied from 0.3 to 0.5 nm depending on the number of laser pulses. Extensive diffusion was observed in thin films deposited at substrate temperatures above 550°C. However, microstructurally, with increase in the substrate temperature the films exhibited larger grain size and greater degree of c‐axis texturing (measured by the ratio of the (005) and (110) X‐ray diffraction peaks). This was found to give rise to better superconducting properties with Tco exceeding 77 K for YBa2Cu3O7‐x films deposited on Si substrates at 650°C.

Epitaxial Realignment of In-Situ Doped Polycrystalline Silicon for Advanced BiCMOS Technologies

1999 ◽  
Vol 587 ◽  
Author(s):  
K. Chang ◽  
S.G. Thomas ◽  
T-C. Lee ◽  
R.B. Gregory ◽  
D. O'meara ◽  
...  
Keyword(s):  
Polycrystalline Silicon ◽  
Chemical Vapor ◽  
Layer Growth ◽  
Native Oxide ◽  
Post Deposition Annealing ◽  
Si Substrates ◽  
Si Films ◽  
Post Deposition

AbstractIndustrial feasibility of an in-situ-doped (ISD) polycrystalline Si process using chemical vapor deposition for advanced BiCMOS technologies is presented. ISD As-doped amorphous and polycrystalline Si layers have been deposited on Si substrates at 610°C and 660°C, respectively, with the deposition rate varying from 120 to 128Å /minute. Samples are compared on the basis of having been subjected to a substrate preclean prior to deposition using an HF solution and an in-situ H2 bake. TEM micrographs reveal the presence of a thin (10-15 Å) native oxide at the deposited layer/substrate interface for samples not precleaned. This is confirmed for both the amorphous and polycrystalline Si depositions. However, for the 610°C-deposited samples given the substrate preclean, a polycrystalline structure with partial epitaxial layer growth is observed. Twins and stacking faults are found at the poly Si/single crystal Si interface, causing interfacial roughness. Post-deposition annealing of the Si films typically generates grain growth, but RBS-channeling characterization of the annealed Si provides evidence of some recrystallization, the extent of which is affected by the original growth condition. Analysis shows that the amorphous deposition at 610°C results in a mixture of epitaxial and polycrystalline Si. Epitaxial realignment of the polycrystalline Si film by post deposition annealing can result in significantly improved device performance.

The relation between phase transformation and onset of thermal degradation in nanoscale CoSi2-polycrystalline silicon structures

2004 ◽  
Vol 96 (12) ◽  
pp. 7568-7573 ◽  
Author(s):  
M. J. H. van Dal ◽  
D. Jawarani ◽  
J. G. M. van Berkum ◽  
M. Kaiser ◽  
J. A. Kittl ◽  
...  
Keyword(s):  
Phase Transformation ◽  
Thermal Degradation ◽  
Polycrystalline Silicon ◽  
Silicon Structures

In Situ Investigation of the a-Si:H/C-Si Interface

1996 ◽  
Vol 420 ◽  
Author(s):  
H. Feist ◽  
C. Swiatkowski ◽  
J. R. Elmiger ◽  
M. Zipfel ◽  
M. Kunst
Keyword(s):  
Crystalline Silicon ◽  
Microwave Frequency ◽  
Ex Situ ◽  
Silicon Substrates ◽  
Si Substrates ◽  
In Situ Investigation ◽  
Drastic Increase ◽  
Interface Recombination Velocity ◽  
Recombination Velocity

AbstractThe deposition of a-Si:H films on crystalline silicon substrates was monitored in situ by transient photoconductivity measurements in the microwave frequency range. At the start of the deposition a drastic increase of the interface recombination velocity was observed, followed by a rapid decrease. The implications of these results for the structure of the interface are discussed. Changes of the interface after deposition were detected without a change of the temperature, even at 250'C: The long relaxation time of the structure of the interface will be discussed. Ex situ results on the samples produced will be compared to the in situ results in view of the passivation properties of a-Si:H films on c-Si substrates.

Phase Transformation of Smooth Diamond Films Grown by hot Filament Chemical Vapor Deposition on Positively Biased Silicon Substrates.

1994 ◽  
Vol 339 ◽  
Author(s):  
G. Popovici ◽  
C. H. Chao ◽  
M. A. Prelas ◽  
E. J. Charlson ◽  
J. M. Meese
Keyword(s):  
Phase Transformation ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Carbon Phase ◽  
Si Substrates ◽  
Hot Filament

ABSTRACTSmooth diamond films have been grown by hot filament chemical vapor deposition under d.c. bias on mirror-polished Si substrates. Films a few micrometers thick were obtained in 30 minutes. Raman spectra showed very broad diamond peaks. X-ray diffraction showed the presence of diamond and also other carbon phase with a line 2.11 Å. With time, the films apparently underwent a phase transformation.

In-Situ x-Ray Diffraction Analysis of TiSi2 Phase Formation from a Titanium-Molybdenum Bilayer

1996 ◽  
Vol 441 ◽  
Author(s):  
C. Cabral ◽  
L. A. Clevenger ◽  
J. M. E. Harper ◽  
R. A. Roy ◽  
K. L. Saenger ◽  
...  
Keyword(s):  
Diffraction Analysis ◽  
Thermal Annealing ◽  
Phase Formation ◽  
Rapid Thermal Annealing ◽  
Polycrystalline Silicon ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
X Ray

AbstractWe demonstrate that the addition of a molybdenum interlayer between titanium and silicon enhances the formation of C54 TiSi2, without bypassing the formation of the C49 TiSi2 phase. In situ x-ray diffraction analysis during rapid thermal annealing, at a rate of 3 °C/s, was used to study the phase formation sequence of TiSi2 starting from a blanket bilayer of Ti on Mo on a polycrystalline Si substrate. It was shown, as in the case without the Mo layer, that the C49 TiSi2 phase forms first, followed by the C54 TiSi2 phase. The results were similar for undoped or arsenic, boron, and phosphorous doped polycrystalline silicon substrates. The temperature range over which the C49 phase is stable is reduced, on average, by 80 °C. The lower end of the range (appearance of C49) is increased by approximately 60 °C and the upper end of the range (disappearance of C49) is decreased by about 20 0C. The orientation of the C49 phase differs in that both the C49(131) and C49(060) orientations are observed, compared to the case without the Mo layer where only the C49(131) orientation is observed.

Phase Transformations in the NiS Nickel Sulphide: Microstructure, Mechanisms and Modelling through In Situ Microscopy.

2011 ◽  
Vol 172-174 ◽  
pp. 402-407 ◽  
Author(s):  
Oussama Yousfi ◽  
Yves J.M. Bréchet ◽  
Patricia Donnadieu ◽  
Florence Robaut ◽  
Federic Charlot ◽  
...  
Keyword(s):  
Phase Transformation ◽  
Phase Transformations ◽  
Interface Velocity ◽  
Isothermal Treatment ◽  
Nickel Sulphide ◽  
Complete Study ◽  
Transformation Mechanisms ◽  
Calorimetric Studies

Nickel sulphide (NiS) can form inclusions in tempered glass which lead to fracture due to a phase transformation with a volume change of about 4%. A heat treatment, aiming to provoke this phase transformation, is currently used in industry to reduce this effect. In order to propose more efficient treatments, a complete study going from identification of the transformation mechanisms to the modelling of the transformation was carried out. Depending on stoichiometry and temperature, two mechanisms for the transformation (partitioned or partitionless) have been evidenced by detailed microstructural and calorimetric studies leading to a fruitful parallel with the Fe-C phase transformations which provides the basis for further modelling of the kinetics. Anin situfollow up of the transformation by optical microscopy has given information (like nucleation rate and interface migration velocity) necessary to build the kinetic models. This modelling is based on Zener and Zener-Hillert kinetics models for interface velocity and described the transformation under isothermal treatment and anisothermal conditions.

Eutectoid Phase Transformations in Nb-Silicide In-Situ Composites

2002 ◽  
Vol 753 ◽  
Author(s):  
B. P. Bewlay ◽  
S. D. Sitzman ◽  
L. N. Brewer ◽  
M. R. Jackson
Keyword(s):  
Phase Transformation ◽  
High Temperature ◽  
Low Temperature ◽  
Phase Transformations ◽  
Oxidation Resistance ◽  
High Strength ◽  
Eutectoid Decomposition ◽  
In Situ Composites ◽  
Structural Applications

ABSTRACTNb-silicide based composites have excellent potential for future high-temperature structural applications. Nb-silicide composites possess Nb together with high-strength silicides, such as Nb5Si3 and Nb3Si. Alloying elements such as Ti and Hf, are added to obtain a balance of properties such as creep performance and oxidation resistance. In Nb-silicide composites generated from Nb-rich binary Nb-Si alloys, Nb3Si is unstable and experiences eutectoid decomposition to Nb and Nb5Si3. The present paper describes a low temperature eutectoid phase transformation during which (Nb)3Si decomposes into (Nb) and (Nb)5Si3, where the (Nb)5Si3 possesses the hP16 structure, as opposed to the tI32 structure observed in binary Nb5Si3.

Structural and Electrical Characterization of FeSix – Layers (1≤ X ≤2) Prepared by RTP of Fe Layers Sputtered on Si (100)

1995 ◽  
Vol 387 ◽  
Author(s):  
M. Líbezný ◽  
J. Poortmans ◽  
P. H. Amesz ◽  
R. A. Donaton ◽  
K. Kyllesbech Larsen ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Phase Transformations ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Electrical Characterization ◽  
Phase Content ◽  
Silicon Heterojunctions ◽  
Emissivity Measurements

Abstractβ-FeSi2 is a semiconductor with a potential for photovoltaic and optoelectronic applications. The preparation of β-FeSi2-layers by rapid thermal processing (RTP) of Fe layers on silicon is investigated in this paper. Fe layers with typical thicknesses of 30 nm were sputtered on Si (100) substrates. We correlated the surface morphology of samples subjected to different RTP treatments with their composition and phase content. Phase transformations during the anneal were also studied by in-situ emissivity measurements. Rectifying and contacting behaviour of silicide/silicon heterojunctions prepared at several RTP-temperatures is presented at the end of this paper. Since it is not possible to prepare β-FeSi2-layers without a presence of either FeSi or α-FeSi2 metallic phases, these structures have poor heterojunction characteristics.

scholarly journals Correlation of Selected Problems During Gan Movpe Epitaxy on si Substrates with in–Situ Interferometer Observation

2014 ◽  
Vol 65 (5) ◽  
pp. 294-298 ◽  
Author(s):  
Tomasz Szymański ◽  
Mateusz Wośko ◽  
Bogdan Paszkiewicz ◽  
Kornelia Indykiewicz ◽  
Regina Paszkiewicz
Keyword(s):  
Buffer Layer ◽  
Silicon Substrates ◽  
Growth Mechanisms ◽  
Gradual Reduction ◽  
Si Substrates ◽  
Interferometer Observation ◽  
P Type ◽  
Gan Film

Abstract In this paper, selected problems occurring during GaN epitaxy on Si substrates are correlated with in-situ interferometer observations based on structures fabricated using 3×2” Thomas Swan Close Coupled Showerhead MOVPE system. Samples were epitaxially grown on highly resistive (> 500cm) p-type 2” silicon substrates. The growth was observed using an interferometer acquiring reflectance traces in-situ. To avoid issues that are shown in this paper, different approaches of the so-called buffer layer were used by depositing them on Si before the growth of GaN. Different material qualities of grown GaN layers were obtained by variation in films constituting the buffer layer grown before the desirable GaN film. The study shows the evolution of the grown samples, improvement of various parameters and also gradual reduction of material issues discussed in this paper. Improvement in GaN layer was mainly observed by SEM characterization and studying the growth mechanisms through observation of reflectance traces obtained in-situ.

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