Preparation and Characterization of Sol-Gel Thin Films of KTIOPO4.

1992 ◽  
Vol 271 ◽  
Author(s):  
Mark A. Harmer ◽  
Mark G. Roelofs
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Precursor Chemistry ◽  
Optical Quality ◽  
Growth Patterns ◽  
Potassium Titanyl Phosphate ◽  
High Optical Quality ◽  
Grain Sizes ◽  
Component Systems

ABSTRACTIn this paper we describe a novel route for the formation of thin films of potassium titanyl phosphate (KTiOPO4 KTP) via a sol-gel route. The ability to form films of high optical quality depends upon the precursor chemistry developed. Formation of stoichiometric films is especially challenging in three component systems and a number of precursors have been investigated. The basic chemistry, processing and resulting microstructure will be described. Transparent, dense and continuous films have been prepared with grain sizes typically of 0.3μm or less depending upon the processing conditions. Some textured growth patterns are observed although the films are essentially polycrystalline. Using the prism coupling technique the films have been found to exhibit waveguiding.

Characterization of SrBi2Nb2O9 Thin Films Prepared by Sol Gel Technique

1996 ◽  
Vol 459 ◽  
Author(s):  
E. Ching-Prado ◽  
W. Pérez ◽  
A. Reynés-Figueroa ◽  
R. S. Katiyar ◽  
D. Ravichandran ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Band ◽  
Sol Gel ◽  
Orthorhombic Symmetry ◽  
X Ray Diffraction ◽  
Ft Ir ◽  
Gel Technique ◽  
High Degree ◽  
First Time

ABSTRACTThin films of SrBi2Nb2O9 (SBN) with thicknesses of 0.1, 0.2, and 0.4 μ were grown by Sol-gel technique on silicon, and annealed at 650°C. The SBN films were investigated by Raman scatering for the first time. Raman spectra in some of the samples present bands around 60, 167, 196, 222, 302, 451, 560, 771, 837, and 863 cm−1, which correspond to the SBN formation. The study indicates that the films are inhomogeneous, and only in samples with thicknesses 0.4 μ the SBN material was found in some places. The prominent Raman band around 870 cm−1, which is the A1g mode of the orthorhombic symmetry, is assigned to the symmetric stretching of the NbO6 octahedrals. The frequency of this band is found to shift in different places in the same sample, as well as from sample to sample. The frequency shifts and the width of the Raman bands are discussed in term of ions in non-equilibrium positions. FT-IR spectra reveal a sharp peak at 1260 cm−1, and two broad bands around 995 and 772 cm−1. The bandwidths of the latter two bands are believed to be associated with the presence of a high degree of defects in the films. The experimental results of the SBN films are compared with those obtained in SBT (T=Ta) films. X-ray diffraction and SEM techniques are also used for the structural characterization.

The Ferroelectric and Electrical Properties of CaBi4Ti4O15 Thin Films Prepared by Sol-Gel Technology

2011 ◽  
Vol 239-242 ◽  
pp. 891-894 ◽  
Author(s):  
Tsung Fu Chien ◽  
Jen Hwan Tsai ◽  
Kai Huang Chen ◽  
Chien Min Cheng ◽  
Chia Lin Wu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Sol Gel ◽  
Morphological Characterization ◽  
Experimental Result ◽  
X Ray Diffraction ◽  
Solution Deposition ◽  
Capacitance Voltage ◽  
Preferential Crystal Orientation

In this study, thin films of CaBi4Ti4O15with preferential crystal orientation were prepared by the chemical solution deposition (CSD) technique on a SiO2/Si substrate. The films consisted of a crystalline phase of bismuth-layer-structured dielectric. The as-deposited CaBi4Ti4O15thin films were crystallized in a conventional furnace annealing (RTA) under the temperature of 700 to 800°C for 1min. Structural and morphological characterization of the CBT thin films were investigated by X-ray diffraction (XRD) and field-emission scanning electron microscope (FE-SEM). The impedance analyzer HP4294A and HP4156C semiconductor parameters analyzer were used to measurement capacitance voltage (C-V) characteristics and leakage current density of electric field (J-E) characteristics by metal-ferroelectric-insulator- semiconductor (MFIS) structure. By the experimental result the CBT thin film in electrical field 20V, annealing temperature in 750°C the CBT thin film leaks the electric current is 1.88x10-7A/cm2and the memory window is 1.2V. In addition, we found the strongest (119) peak of as-deposited thin films as the annealed temperature of 750°C

Sol–gel preparation and optical characterization of NiO and Ni1−xZnxO thin films

2003 ◽  
Vol 258 (3-4) ◽  
pp. 380-384 ◽  
Author(s):  
Young Ran Park ◽  
Kwang Joo Kim
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Optical Characterization ◽  
Gel Preparation

scholarly journals Simple Preparation and Characterization of Nano-Crystalline Zinc Oxide Thin Films by Sol-Gel Method on Glass Substrate

2012 ◽  
Vol 02 (01) ◽  
pp. 10-15 ◽  
Author(s):  
Muhammad Saleem ◽  
Liang Fang ◽  
Aneela Wakeel ◽  
M. Rashad ◽  
C. Y. Kong
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Glass Substrate ◽  
Sol Gel ◽  
Oxide Thin Films ◽  
Gel Method ◽  
Sol Gel Method ◽  
Simple Preparation ◽  
Nano Crystalline

Preparation and characterization of V2O5 doped SiO2-TiO2 thin films

2012 ◽  
Vol 2 (1) ◽  
Author(s):  
Marek Nocuń ◽  
Sławomir Kwaśny
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Photoelectron Spectroscopy ◽  
Sol Gel ◽  
Dip Coating ◽  
Band Gap Energy ◽  
Tio2 Thin Films ◽  
Glass Substrates ◽  
Gel Technique

AbstractIn our investigation, V doped SiO2/TiO2 thin films were prepared on glass substrates by dip coating sol-gel technique. Chemical composition of the samples was studied by X-ray photoelectron spectroscopy (XPS). Transmittance of the samples was characterized using UV-VIS spectrophotometry. Subsequently band-gap energy (Eg) was estimated for these films. Powders obtained from sols were characterized by FTIR spectroscopy. It was found that vanadium decreases optical band gap of SSiO2/TiO2 films.

Growth and characterization of β-Ga2O3 thin films by sol-gel method for fast-response solar-blind ultraviolet photodetectors

2018 ◽  
Vol 766 ◽  
pp. 601-608 ◽  
Author(s):  
Hao Shen ◽  
Yinong Yin ◽  
Kun Tian ◽  
Karthikeyan Baskaran ◽  
Libing Duan ◽  
...  
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Fast Response ◽  
Gel Method ◽  
Sol Gel Method ◽  
Solar Blind ◽  
Ultraviolet Photodetectors

Synthesis and characterization of LiCoO2 thin films prepared by the sol–gel method

2011 ◽  
Vol 13 (6) ◽  
pp. 1232-1234 ◽  
Author(s):  
Vaishali Patil ◽  
Arun Patil ◽  
Ji-Won Choi ◽  
Seok-Jin Yoon
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Synthesis And Characterization ◽  
Gel Method ◽  
Sol Gel Method

Oxygen gas sensing and microstructure characterization of sol-gel-prepared MoO3-TiO2 thin films

1999 ◽  
Author(s):  
Yongxiang Li ◽  
Muralihar K. Ghantasala ◽  
Kosmas Galatsis ◽  
Wojtek Wlodarski
Keyword(s):  
Thin Films ◽  
Gas Sensing ◽  
Sol Gel ◽  
Microstructure Characterization ◽  
Tio2 Thin Films ◽  
Oxygen Gas

scholarly journals Growth and Characterization of Indium-Doped Zinc Oxide Thin Films Prepared by Sol-Gel Method

2012 ◽  
Vol 121 (1) ◽  
pp. 217-220 ◽  
Author(s):  
M.S. Kim ◽  
K.G. Yim ◽  
S. Kim ◽  
G. Nam ◽  
D.Y. Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Sol Gel ◽  
Oxide Thin Films ◽  
Gel Method ◽  
Sol Gel Method

scholarly journals Preparation and Characterization of Carbon Nitride Film with High Optical Quality

2019 ◽  
Vol 35 (4) ◽  
pp. 442-450 ◽  
Author(s):  
Dandan CAO ◽  
◽  
Rong LÜ ◽  
Anchi YU
Keyword(s):  
Carbon Nitride ◽  
Optical Quality ◽  
Nitride Film ◽  
High Optical Quality ◽  
Carbon Nitride Film
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