Ion Beam Synthesis of IrSi3 by Implantation of 2 MeV Ir Ions+

1992 ◽  
Vol 279 ◽  
Author(s):  
T. P. Sjoreen ◽  
H.-J. Hinneberg ◽  
M. F. Chisholm
Keyword(s):  
Substrate Temperature ◽  
Ion Beam ◽  
Layer Formation ◽  
Cross Sectional ◽  
Implantation Energy ◽  
Precipitate Coarsening ◽  
Ion Channeling ◽  
Transmission Electron ◽  
Lattice Damage ◽  
Substrate Temperatures

ABSTRACTThe formation of a buried IrSi3 layer in (111) oriented Si by ion implantation and annealing has been studied at an implantation energy of 2 MeV for substrate temperatures of 450–550°C. Rutherford backscattering (RBS), ion channeling and cross-sectional transmission electron microscopy showed that a buried epitaxial IrSi3 layer is produced at 550°C by implanting ≥ 3.4 × 1017 Ir/cm2 and subsequently annealing for 1 h at 1000°C plus 5 h at 1100°C. At a dose of 3.4 × 1017 Ir/cm2, the thickness of the layer varied between 120 and 190 nm and many large IrSi3 precipitates were present above and below the film. Increasing the dose to 4.4 × 1017 Ir/cm2 improved the layer uniformity at the expense of increased lattice damage in the overlying Si. RBS analysis of layer formation as a function of substrate temperature revealed the competition between the mechanisms for optimizing surface crystallinity vs. IrSi3 layer formation. Little apparent substrate temperature dependence was evident in the as-implanted state but after annealing the crystallinity of the top Si layer was observed to deteriorate with increasing substrate temperature while the precipitate coarsening and coalescence improved.

Ion Beam Synthesis of IrSi3 by 1-MeV Ir Ion Implantation into Si(111)

1993 ◽  
Vol 320 ◽  
Author(s):  
T. P. Sjoreen ◽  
H.- J. Hinneberg
Keyword(s):  
Ion Implantation ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Processing Parameters ◽  
Cross Sectional ◽  
Ion Channeling ◽  
Transmission Electron ◽  
Nearly Continuous ◽  
Substrate Temperatures ◽  
Different Doses

ABSTRACTThe formation of a Si/IrSi3/Si heterostructurie by 1-MeV Ir ion implantation and subsequent annealing has been studied for different doses (0.1-2.25 × 1017 Ir/cm2), substrate temperatures (450°-600°C) and annealing temperatures (1000°-1200°C) using Rutherford backscattering spectrometry, ion channeling and cross-sectional transmission electron microscopy. The heterostructure formation is observed to depend strongly on the processing conditions. The best structure, nearly continuous and precipitate-free, is obtained by implanting 1.8-2.0× 1017 1r/cm2 at a substrate temperature of 550°C and annealing at 1100°C for 5 h. A stoichiometric IrSi3 layer can also be produced by furnace annealing at 1150°C for 1 h or by rapid-thermal-annealing at 1200°C for 3 min. Other substrate temperatures generally lead to a structure with a discontinuous IrSi3 layer frequently interrupted by large surface precipitates or islands. The origin of these islands, as well as the dependence of the heterostructure on processing parameters, is discussed.

Ion Beam Synthesis of IrSi3 by 1-MeV Ir Ion Implantation into Si(111)

1993 ◽  
Vol 316 ◽  
Author(s):  
T. P. Sjoreen ◽  
H.-J. Hinneberg
Keyword(s):  
Ion Implantation ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Processing Parameters ◽  
Cross Sectional ◽  
Ion Channeling ◽  
Transmission Electron ◽  
Nearly Continuous ◽  
Substrate Temperatures ◽  
Different Doses

ABSTRACTThe formation of a Si/IrSi3/Si heterostructure by 1-MeV Ir ion implantation and subsequent annealing has been studied for different doses (0.1-2.25 × 1017 Ir/cm2), substrate temperatures (450°-600°C) and annealing temperatures (1000°-1200°C) using Rutherford backscattering spectrometry, ion channeling and cross-sectional transmission electron microscopy. The heterostructure formation is observed to depend strongly on the processing conditions. The best structure, nearly continuous and precipitate-free, is obtained by implanting 1.8-2.0 × 1017 Ir/cm2 at a substrate temperature of 550°C and annealing at 1100°C for 5 h. A stoichiometric IrSi3 layer can also be produced by furnace annealing at 1150°C for 1 h or by rapid-thermal-annealing at 1200°C for 3 min. Other substrate temperatures generally lead to a structure with a discontinuous IrSi3 layer frequently interrupted by large surface precipitates or islands. The origin of these islands, as well as the dependence of the heterostructure on processing parameters, is discussed.

TEM Study of Co/Pd and Co/Au Multilayers

1993 ◽  
Vol 51 ◽  
pp. 1036-1037
Author(s):  
A.E.M. De Veirman ◽  
F.J.G. Hakkens ◽  
W.M.J. Coene ◽  
F.J.A. den Broeder
Keyword(s):  
Magnetic Anisotropy ◽  
Ion Beam ◽  
Perpendicular Magnetic Anisotropy ◽  
Optical Recording ◽  
Magnetic Multilayer ◽  
Ion Beam Sputtering ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Beam Sputtering ◽  
Substrate Temperatures

There is currently great interest in magnetic multilayer (ML) thin films (see e.g.), because they display some interesting magnetic properties. Co/Pd and Co/Au ML systems exhibit perpendicular magnetic anisotropy below certain Co layer thicknesses, which makes them candidates for applications in the field of magneto-optical recording. It has been found that the magnetic anisotropy of a particular system strongly depends on the preparation method (vapour deposition, sputtering, ion beam sputtering) as well as on the substrate, underlayer and deposition temperature. In order to get a better understanding of the correlation between microstructure and properties a thorough cross-sectional transmission electron microscopy (XTEM) study of vapour deposited Co/Pd and Co/Au (111) MLs was undertaken (for more detailed results see ref.).The Co/Pd films (with fixed Pd thickness of 2.2 nm) were deposited on mica substrates at substrate temperatures Ts of 20°C and 200°C, after prior deposition of a 100 nm Pd underlayer at 450°C.

TEM Sample Preparation Tricks for Advanced DRAMs

2015 ◽  
Author(s):  
Ching Shan Sung ◽  
Hsiu Ting Lee ◽  
Jian Shing Luo
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Sample Preparation ◽  
Integrated Circuit ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Tem Analysis ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Characterization Of Materials

Abstract Transmission electron microscopy (TEM) plays an important role in the structural analysis and characterization of materials for process evaluation and failure analysis in the integrated circuit (IC) industry as device shrinkage continues. It is well known that a high quality TEM sample is one of the keys which enables to facilitate successful TEM analysis. This paper demonstrates a few examples to show the tricks on positioning, protection deposition, sample dicing, and focused ion beam milling of the TEM sample preparation for advanced DRAMs. The micro-structures of the devices and samples architectures were observed by using cross sectional transmission electron microscopy, scanning electron microscopy, and optical microscopy. Following these tricks can help readers to prepare TEM samples with higher quality and efficiency.

Photo Modified Growth of GaAs by Chemical Beam Epitaxy

1998 ◽  
Vol 510 ◽  
Author(s):  
R. Jothilingam ◽  
T. Farrell ◽  
T.B. Joyce ◽  
P.J. Goodhew
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Growth Rate ◽  
Electrical Power ◽  
Xenon Lamp ◽  
Chemical Beam Epitaxy ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Substrate Temperatures ◽  
Laser Reflectometry

AbstractWe report the photo modified growth of GaAs by chemical beam epitaxy at substrate temperatures in the range 335 to 670°C using triethygallium (TEG) and arsine. A mercury-xenon lamp (electrical power 200 W) provided the irradiation for the photoassisted growth. The growth was monitored in real time by laser reflectometry (LR) using a 670 nm semiconductor laser, and the optically determined growth rate agreed with that obtained from the layer thickness measured by cross sectional transmission electron microscopy. The observed photo-enhancement of the growth rate at low substrate temperatures and inhibition at high substrate temperatures is thermal in origin, consistent with raising the substrate temperature by 10±3°C. Cross sectional transmission electron microscopy showed that the photoassisted layers are essentially free from dislocations

Effect of Substrate Temperature on Properties of Nano-Scale Functionally Graded Calcium Phosphate Coatings

2006 ◽  
Author(s):  
Travis Blalock ◽  
Xiao Bai ◽  
Afsaneh Rabiei
Keyword(s):  
Electron Microscopy ◽  
Calcium Phosphate ◽  
Substrate Temperature ◽  
Ion Beam ◽  
Processing Parameters ◽  
Functionally Graded ◽  
Cross Sectional ◽  
X Ray ◽  
Phosphate Coatings ◽  
Calcium Phosphate Coatings

The effect of substrate temperature and processing parameters on microstructure and crystallinity of calcium phosphate coatings deposited on heated substrates in an Ion Beam Assisted Deposition (IBAD) system are being studied. The experimental procedures include mechanical testing and film thickness measurements using bonding strength and profilometery. Cross-sectional scanning transmission electron microscopy (STEM) with energy dispersive X-ray spectroscopy (EDX) through the thickness of the film as well as scanning electron microscopy (SEM) with EDX at the top surface of the film was performed to evaluate the microstructure of the film. The coating crystallinity was studied through X-ray diffraction (XRD). The information gained from current analysis on the set temperature coatings will be used to refine the processing techniques of the Functionally Graded Hydroxyapatite (FGHA) coating.

CoSi2 Precipitate Coarsening During Formation of Buried Epitaxial Cosi2 Layers By Ion Beam Synthesis

1990 ◽  
Vol 201 ◽  
Author(s):  
R. Jebasinski ◽  
S. Mantl ◽  
K. Radermacher ◽  
P. Fichtner ◽  
W. Jăger ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Activation Energy ◽  
Transmission Electron Microscopy ◽  
Cross Section ◽  
Microstructural Evolution ◽  
Annealing Temperature ◽  
Ion Beam ◽  
Precipitate Coarsening ◽  
Annealing Temperatures ◽  
Transmission Electron

AbstractThe coarsening of CoSi2 precipitates and the microstructural evolution of (111) Si implanted with 200 keV Co+ ions at 350°C and fluences of 1×1016cm−2 and 6×1016cm−2 were investigated as a function of depth, annealing temperature and annealing time using Rutherford Backscattering Spectroscopy (RBS) and Transmission Electron Microscopy (TEM). After annealing cross-section TEM micrographs show a layered array of platelet-shaped precipitates with preferred facets on {111} planes. The fraction of Co-atoms, that were redistributed during the different annealing temperatures and times, has been used to determine an activation energy for the precipitate coarsening. By applying the Meechan-Brinkman and the change-of-slope methods, we obtained activation energies in the range of 3.2 – 3.6 eV.

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