Growth and Optical Characterization of ZnMnTe Grown by Molecular Beam Epitaxy

1992 ◽  
Vol 281 ◽  
Author(s):  
John L. Reno ◽  
Eric D. Jones ◽  
Eugene L. Venturini
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Structural Phase ◽  
Optical Characterization ◽  
X Ray Diffraction ◽  
X Ray ◽  
Zinc Blende ◽  
Wurtzite Crystal Structure ◽  
Peak Energy

ABSTRACTWe have successfully grown ZnMnTe alloys by molecular beam epitaxy using GaAs as a substrate. Bulk MnTe has the wurtzite crystal structure but the structural phase of the material was confirmed to be zinc-blende by standard θ-2θ x-ray diffraction techniques. The composition was also determined using x-ray diffraction techniques. Manganese cancentration was also estimated from magnetization measurements taken as a function of temperature. Magneto-luminescence studies were performed at 1.4K on the acceptor-bound exciton in the semimagnetic semiconductor ZnMnTe alloys. As expected, the photoluminescence peak energy decreased with increasing magnetic field.

Characterization of molecular beam epitaxy grown CdF2 layers by x‐ray diffraction and CaF2:Sm photoluminescence probe

1995 ◽  
Vol 13 (6) ◽  
pp. 2703-2708 ◽  
Author(s):  
N. S. Sokolov ◽  
N. N. Faleev ◽  
S. V. Gastev ◽  
N. L. Yakovlev ◽  
A. Izumi ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
X Ray Diffraction ◽  
X Ray

Fabrication and characterization of ZnMgO nanowalls grown on 4H-SiC by molecular beam epitaxy

2019 ◽  
Vol 52 (1) ◽  
pp. 168-170
Author(s):  
Mieczyslaw A. Pietrzyk ◽  
Aleksandra Wierzbicka ◽  
Marcin Stachowicz ◽  
Dawid Jarosz ◽  
Adrian Kozanecki
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Optoelectronic Devices ◽  
Growth Conditions ◽  
Buffer Layers ◽  
X Ray Diffraction ◽  
X Ray ◽  
Fabrication And Characterization

Control of nanostructure growth is a prerequisite for the development of electronic and optoelectronic devices. This paper reports the growth conditions and structural properties of ZnMgO nanowalls grown on the Si face of 4H-SiC substrates by molecular beam epitaxy without catalysts and buffer layers. Images from scanning electron microscopy revealed that the ZnMgO nanowalls are arranged in parallel rows following the stripe morphology of the SiC surface, and their thickness is around 15 nm. The crystal quality of the structures was evaluated by X-ray diffraction measurements.

scholarly journals Growth and Characterization of M-Plane GaN Thin Films Grown on γ-LiAlO2 (100) Substrates

Scanning ◽  
2017 ◽  
Vol 2017 ◽  
pp. 1-7
Author(s):  
Yu-Chiao Lin ◽  
Ikai Lo ◽  
Hui-Chun Shih ◽  
Mitch M. C. Chou ◽  
D. M. Schaadt
Keyword(s):  
Thin Films ◽  
High Resolution ◽  
Molecular Beam Epitaxy ◽  
Surface Morphology ◽  
Molecular Beam ◽  
Flux Ratio ◽  
Anisotropic Growth ◽  
X Ray Diffraction ◽  
X Ray

M-plane GaN thin films were grown on LiAlO2 substrates under different N/Ga flux ratios by plasma-assisted molecular beam epitaxy. An anisotropic growth of M-plane GaN was demonstrated against the N/Ga flux ratio. As the N/Ga flux ratio decreased by increasing Ga flux, the GaN surface trended to a flat morphology with stripes along [112-0]. According to high-resolution X-ray diffraction analysis, Li5GaO4 was observed on the interface between GaN and LiAlO2 substrate. The formation of Li5GaO4 would influence the surface morphology and crystal quality.

Structural Characterization of InAs/(GaIn)Sb Superlattices for IR Optoelectronics

1996 ◽  
Vol 421 ◽  
Author(s):  
J. Wagner ◽  
J. Schmitz ◽  
F. Fuchs ◽  
U. Weimar ◽  
N. Herres ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
High Resolution ◽  
Molecular Beam Epitaxy ◽  
Structural Characterization ◽  
Molecular Beam ◽  
Alloy Composition ◽  
Structural Quality ◽  
X Ray Diffraction ◽  
X Ray

AbstractWe report on the structural characterization of InAs/(GaIn)Sb superlattices (SL) grown by solid-source molecular-beam epitaxy. SL periodicity and overall structural quality were assessed by high-resolution X-ray diffraction and Raman spectroscopy. Spectroscopic ellipsometry was found to be sensitive to the (GaIn)Sb alloy composition.

X-ray Characterization of PbTe/SnTe Superlattices

1997 ◽  
Vol 484 ◽  
Author(s):  
S. O. Ferreira ◽  
E. Abramof ◽  
P. H. O. Rappl ◽  
A. Y. Ueta ◽  
H. Closs ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Infrared Detectors ◽  
Molecular Beam ◽  
Hole Concentration ◽  
Base Material ◽  
X Ray Diffraction ◽  
X Ray ◽  
Dynamical Simulation ◽  
Sample Characterization

AbstractPbTe/SnTe superlattices have been proposed many years ago for use as base material for infrared detectors. However, many difficulties have prevented its use, mainly the ones related to obtaining low concentration SnTe. Recently we have shown that SnTe layers with relatively low hole concentration can be grown by molecular beam epitaxy at low temperature using stoichiometric charges. In this work we investigate the structural properties of PbTe/SnTe superlattices grown by molecular beam epitaxy on (111) BaF2 substrates. Sample characterization has been done by high resolution x-ray diffraction. Information on strain was obtained from reciprocal space maps of asymmetric Bragg reflections and used as input parameters for dynamical simulation of the diffraction spectra.

Growth and Characterization of Epitaxial Al1−xInxN Films Grown on Sapphire (0001) by Plasma Source Molecular Beam Epitaxy

2000 ◽  
Vol 639 ◽  
Author(s):  
M. J. Lukitsch ◽  
G. W. Auner ◽  
R. Naik ◽  
V. M. Naik
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Plasma Source ◽  
High Energy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Alloy Segregation

ABSTRACTEpitaxial Al1−xInxN films (thickness ∼150 nm) with 0 ≤ × ≤ 1 have been grown by Plasma Source Molecular Beam Epitaxy on Sapphire (0001) at a low substrate temperature of 375°C and were characterized by reflection high energy electron diffraction (RHEED), x-ray diffraction (XRD), and atomic force microscopy (AFM). Both RHEED and XRD measurements confirm the c-plane growth of Al1-xInxN films on sapphire (0001) with the following epitaxial relations: Nitride [0001] ∥ Sapphire [0001] and Nitride < 0110 > ∥ Sapphire <2110>. The films do not show any alloy segregation. However, the degree of crystalline mosaicity and the compositional fluctuation increases with increasing In concentration. Further, AFM measurements show an increased surface roughness with increasing In concentration in the alloy films.

Epitaxial Growth of Zinc-Blende Ain by Plasma Source Molecular Beam Epitaxy

1999 ◽  
Vol 570 ◽  
Author(s):  
Margarita P. Thompson ◽  
Gregory W. Auner ◽  
Andrew R. Drews ◽  
Tsvetanka S. Zheleva ◽  
Kenneth A. Jones
Keyword(s):  
Molecular Beam Epitaxy ◽  
Electron Diffraction ◽  
Molecular Beam ◽  
Plasma Source ◽  
High Energy ◽  
Lattice Parameter ◽  
High Energy Electron ◽  
X Ray Diffraction ◽  
X Ray ◽  
Zinc Blende

ABSTRACTEpitaxial zinc-blende AIN films as thick as 2000Å were deposited on Si (100) substrates by plasma source molecular beam epitaxy (PSMBE). The metastable zinc-blende form of AIN was observed to occur when pulse d.c. power was supplied to the PSMBE hollow cathode source. Reflection High Energy Electron Diffraction (RHEED) showed that the films possess a four fold symmetry. X-Ray Diffraction (XRD) revealed two strong peaks corresponding to the (200) and (400) reflections from the zinc-blende AIN. The lattice parameter of the films was calculated to be approximately 4.373Å. TEM, performed on one of the films, revealed that the AIN is cubic, single crystalline and epitaxial with respect to the Si (100) substrate.

scholarly journals MOVPE Growth of Quaternary (Al,Ga,In)N for UV Optoelectronics

2000 ◽  
Vol 5 (S1) ◽  
pp. 412-424
Author(s):  
Jung Han ◽  
Jeffrey J. Figiel ◽  
Gary A. Petersen ◽  
Samuel M. Myers ◽  
Mary H. Crawford ◽  
...  
Keyword(s):  
Room Temperature ◽  
Rutherford Backscattering Spectrometry ◽  
Optoelectronic Devices ◽  
Lattice Parameter ◽  
X Ray Diffraction ◽  
X Ray ◽  
Peak Energy ◽  
Movpe Growth ◽  
Pl Emission

We report the growth and characterization of quaternary AlGaInN. A combination of photoluminescence (PL), high-resolution x-ray diffraction (XRD), and Rutherford backscattering spectrometry (RBS) characterizations enables us to explore the contours of constant- PL peak energy and lattice parameter as functions of the quaternary compositions. The observation of room temperature PL emission at 351nm (with 20% Al and 5% In) renders initial evidence that the quaternary could be used to provide confinement for GaInN (and possibly GaN). AlGaInN/GaInN MQW heterostructures have been grown; both XRD and PL measurements suggest the possibility of incorporating this quaternary into optoelectronic devices.

Optical and structural prorerties of InAs epilayer on graded InGaAs

2001 ◽  
Vol 696 ◽  
Author(s):  
Gu Hyun Kim ◽  
Jung Bum Choi ◽  
Joo In Lee ◽  
Se-Kyung Kang ◽  
Seung Il Ban ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Residual Strain ◽  
Molecular Beam ◽  
Lattice Mismatch ◽  
Peak Position ◽  
Excitation Intensity ◽  
Total Thickness ◽  
Ingaas Layer ◽  
X Ray Diffraction ◽  
X Ray

AbstractWe have studied infrared photoluminescence (PL) and x-ray diffraction (XRD) of 400 nm and 1500 nm thick InAs epilayers on GaAs, and 4 nm thick InAs on graded InGaAs layer with total thickness of 300 nm grown by molecular beam epitaxy. The PL peak positions of 400 nm, 1500 nm and 4 nm InAs epilayer measured at 10 K are blue-shifted from that of InAs bulk by 6.5, 4.5, and 6 meV, respectively, which can be largely explained by the residual strain in the epilayer. The residual strain caused by the lattice mismatch between InAs and GaAs or graded InGaAs/GaAs was observed from XRD measurements. While the PL peak position of 400 nm thick InAs layer is linearly shifted toward higher energy with increase in excitation intensity ranging from 10 to 140 mW, those of 4 nm InAs epilayer on InGaAs and 1500 nm InAs layer on GaAs is gradually blue-shifted and then, saturated above a power of 75 mW. These results suggest that adopting a graded InGaAs layer between InAs and GaAs can efficiently reduce the strain due to lattice mismatch in the structure of InAs/GaAs.

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